JP2511737B2 - Plasma gas phase reactor - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gas phase reactor using plasma.

[0002]

2. Description of the Related Art A reaction apparatus conventionally used for forming a thin film on a substrate using plasma vapor phase reaction is a reaction vessel and means for exhausting raw material gas and reaction products in the reaction vessel. A means for supplying a gas as a raw material of a thin film into the reaction vessel, a means for measuring the pressure in the reaction vessel, a means for adjusting the pressure in the reaction vessel to a predetermined value, and a substrate in the reaction vessel. A plate-shaped electrode (power electrode) having a means for heating and the like and connected to a plasma generating power source in the reaction vessel, was installed in parallel with the electrode, and was maintained at the ground potential. The one having a flat plate-shaped counter electrode is generally used. When a thin film is formed using this apparatus, the substrate is placed on a counter electrode and a plasma vapor phase reaction is caused to perform a process such as film formation.

However, when a film is formed by such an apparatus, the following problems have occurred. First, the reaction product adheres to the inner wall of the reaction container in the form of flakes in addition to the substrate, and when the thin film is formed, the reaction product falls on the substrate, resulting in the formation of pinholes in the thin film. It's happening. Then, since the substrate is arranged on the plate-shaped electrode, a problem arises that a large amount of films cannot be formed.

As a device for solving such a problem, a substrate for confining the plasma only in the region where the substrate is placed in the reaction container and preventing the plasma from spreading to the inner wall of the reaction container is provided. A frame called a container surrounded by four surfaces is arranged around the substrate, and the electrodes are separated from the substrate, and the portions above and below the frame which are not enclosed by the frame are covered with the electrodes. An apparatus for performing a plasma gas phase reaction as a structure in which the space in which is placed is completely independent of the inside of the reaction vessel by the frame and the two electrodes and plasma is confined therein (hereinafter, this apparatus is referred to as positive column plasma C
Called VD device).

In this apparatus, since the substrates are set upright and surrounded by a frame body, it is possible to form a film on a plurality of substrates at once, and in order to solve the above problems. Is an effective device.

However, a new problem has arisen also in such a device. There are two methods shown in FIG. 8 that are often used as a method for supplying a discharge power source to the electrodes in the positive column plasma CVD apparatus. FIG.
The method shown in (a) is for explaining a dual power supply method in which two power supplies are independently supplied to a pair of electrodes through a matching module, and FIG. 8 (b) shows one power supply for a matching module and a balun. A balun system for supplying a pair of electrodes via 81 will be described.

In these power supply systems, a blocking capacitor is inserted between the electrode and the matching module so that the substrate is self-biased.

In the case of the positive column plasma CVD apparatus, no self bias is applied to the electrodes regardless of the presence or absence of the plucking capacitor regardless of which of the above power supply methods is used. It goes without saying that no self-bias is applied when there is no plucking capacitor.

In this case, the plasma space potential is approximately V _PP /
4 to V _PP / 2, when the container is at ground potential,
The container will be sputtered with energy corresponding to the plasma space potential. The same applies when the substrate is electrically conductive and at ground potential, in which case the coating on the substrate is subject to significant damage.

Even when the container is at the ground potential, when the substrate is electrically insulated from the container, the surface of the substrate is electrically insulated from the container, so that the floating potential is constant. In this case, the difference between the plasma space potential and the floating potential is smaller than the difference between the plasma space potential and the ground potential, so that the sputtering is more difficult than when both the container and the substrate are at the ground potential. Damage to the coating due to

However, even in this case, the plasma near the substrate and the plasma near the susceptor at the boundary between the electrically insulated substrate and the container at the ground potential, particularly the susceptor, are affected by the influence of the substrate and the susceptor. Since the state is changed, the film thickness and the film quality are different between the part near the edge of the substrate and the central part of the substrate, and the uniformity of the film thickness and the film quality is impaired.

On the other hand, in the case of the positive column plasma CVD apparatus, since the container is in partial contact with the reaction container, the heat of the substrate easily escapes to the reaction container, and it is not easy to heat or heat the container. Depending on the structure, the temperature uniformity is impaired and the like has been a problem in heating the substrate.

Further, in the case of a positive column plasma CVD apparatus,
Since a large number of substrates can be processed, it is necessary to increase the volume of plasma. Therefore, the electrode interval must be widened, which causes a problem that the device becomes large and large RF power is required. Was there.

[0014]

SUMMARY OF THE INVENTION The present invention has the above-mentioned positive column plasma CVD apparatus, which reduces damage to the coating film at the time of forming the coating film and improves the uniformity of the coating film thickness and film quality. The object is to improve the heating efficiency of the substrate.

[0015]

To solve the above problems, the present invention comprises a reaction vessel, a system for supplying a reactive gas to the reaction vessel, and an exhaust system for exhausting unnecessary reaction products. In a plasma vapor phase reaction apparatus, a pair of opposed electrodes provided in a reaction vessel are covered with a hood except for areas facing each other, and the hood has a first inside electrically insulated from the electrodes. Has a double structure consisting of a hood and a second hood on the outside thereof at ground potential, and the substrate support for supporting the substrate surrounds the substrate with a frame except for the regions facing the electrodes. The substrate support has an outer structure at a ground potential and is covered with a conductor plate electrically insulated from the substrate support, and the pair of hoods and the substrate support are provided. In the space surrounded by The pair of hood and said substrate support has a plasma gas phase reactor which is provided to confine the plasma generated by electric power supplied from the pair of electrodes.

The present invention will be described in detail below with reference to the drawings. FIG. 1 shows a reaction container 11, an electrode 12, and a first hood 1.
3, the second hood 14 and the substrate support 15 are shown. Although only the upper half of the reaction vessel is shown in this figure, the lower half of the reaction vessel is symmetrically similar to the electrodes, the first hood, and the second hood as shown in FIGS. 2, 7, and 9. Needless to say, a substrate support is provided.

Although not shown, the reaction vessel 11 is a system for supplying a reactive gas, an exhaust system for exhausting unnecessary reaction products, a pressure control system for adjusting the pressure to a predetermined value, and a pressure measurement for monitoring the pressure. It has a system and is maintained at the ground potential.

Although not shown, a pair of electrodes 12 are provided so as to face each other. A plasma generating power source is connected to each electrode via a matching module, or one power source is connected to the matching module via a balun. ing.

The electrode has a punching shape in which a plurality of holes are formed in a plate, or a mesh shape having a mesh shape, and the aperture ratio is maximized within a range not impairing the function as a flat plate electrode. . Of course, a flat plate electrode may be used, but such a punching shape or a mesh shape is preferable.

The reason is that the area of the electrode and the area of the holes of the mesh (aperture ratio) can be increased. Increasing this aperture ratio has the effect of making it easier for plasma to spread to the vicinity of the center between the electrodes because the current flowing through the electrodes becomes smaller than that of plate-shaped flat plate electrodes, resulting in a larger voltage. ,
This is also advantageous when the size of the device is increased.

The hood covering the electrodes has a double structure consisting of the first hood 13 and the second hood 14, and covers the electrodes except for the region where the pair of electrodes face each other.
The first hood 13 is electrically insulated from the electrode 12 and the reaction vessel 11.

The second hood 14 is fixed to the reaction vessel 11 and is electrically maintained at the ground potential.

The first hood and the second hood have a punching shape in which a plurality of holes are formed in a plate like the electrodes,
It is preferable to use a mesh-shaped mesh.
This is because the reactive gas is introduced between the electrodes.

However, in the first hood, the portion that covers the upper portion of the electrode and the portion that covers the side surface of the electrode can be made of different materials. For example, the part that covers the upper part of the electrode can be punched or mesh-shaped and the part that covers the side surface of the electrode can be plate-shaped. Can be made uninfluenced to guide between the electrodes. This also applies to the second hood, and in the second hood as well, the portion that covers the upper portion of the electrode 12 has a punching shape or a mesh-like mesh shape, and the side surface of the electrode is The covering portion can be plate-shaped.

The first hood 13 is provided so as to be separated from the electrode 12 within a range where discharge does not occur between the electrodes 12, for example, within a range of 1 to 10 mm.

The material of the first hood may be quartz, aluminum or other metal as long as it can be insulated from surrounding conductors.

The material of the second hood 14 may be metal or the like, which can be maintained at the ground potential.

The first hood 13 is supported by the second hood via an insulator such as ceramics or Teflon. The distance between the first hood 13 and the second hood 14 is within a range in which no discharge is generated between them, for example, 1
It is provided separately in the range of 10 mm.

The substrate support member 15 has a substrate holding jig 18 for holding the substrate, and the holding jig is a plate-like member on which the substrate can be placed. , Has a function of fixing the substrate. However, as long as the substrate support 15 has a function of fixing the substrate, the shape of the plate is not limited.

The holding jig 18 has a structure in which the holding jig 18 is surrounded by a frame so as to surround the holding jig 18 except for the region where the opposing electrodes are provided.

The substrate support 15 is covered with a conductor plate 16 which is electrically grounded around it. The conductor plate 16 is attached to the reaction container 1 via a transport mechanism or a support base.
1 is electrically connected to the conductor plate 16
Will be held at ground potential.

The substrate support 15 and the conductor plate 16 are connected by an insulator such as ceramics or Teflon similar to the above-mentioned insulator.

Since the substrate support 15 and the conductor plate 16 are connected by an insulator in this manner, it is more difficult for heat to be transferred than metal, so that the heat retention during film formation is improved, which is easy. There is also an effect that energy can be saved.

The distance between the substrate support 15 and the electrode 12 or the distance between the substrate holding jig 18 and the electrode 12 is set so as to be a distance within a range in which no discharge occurs between them, for example, a range of 1 to 10 mm. There is.

The distance between the substrate support 15 and the first hood 13 and the distance between the conductor plate 16 and the second hood 14 were within 5 mm. If it exceeds 5 mm, plasma will be generated on the substrate support 15.
And the reaction container 1 from the space created by the first and second hoods
This is because it leaks into the inside of 1.

By electrically insulating the substrate support 15, the substrate support 1 can be used regardless of whether the substrate is a conductor, an insulator or the like.
Since the floating potential is the same as that of 5, the RF supplied
The difference between the plasma space potential and the substrate surface potential becomes small regardless of the magnitude of the voltage, and damage due to sputtering is small regardless of the magnitude of the plasma space potential.

The substrate support 15 is arranged such that the surface on which the substrate is formed is oriented along gravity, and even if the reaction product attached to the upper part of the reaction vessel falls off as flakes, the surface to be formed on the substrate is covered. I try not to wear it.

The material of the substrate support 15 may be quartz, aluminum or other metal as long as it can be insulated from the surrounding conductors.

The material of the conductor plate 16 may be a metal or the like that can be maintained at the ground potential.

In the present invention, an insulated plate is provided in the hood in order to make the film thickness of the formed film uniform.
The plate surface is provided so as to correspond to the surface on which the substrate is formed.

The provision of the surface of the insulated plate corresponding to the surface on which the substrate is formed means that the film is formed on the surface of the insulated plate when the coating is formed on the substrate. In addition, it means that an insulated plate surface is provided between the electrode 12 and the substrate holding jig 18 so as to prevent discharge.

In FIG. 1, the surface of the insulated plate 17 is placed on the same plane as the surface of the substrate holding jig 18 on which the substrate is placed.

An insulated plate 17 is provided in the first hood 13.
Are provided in the same number as the substrate holding jigs 18,
The front surface and the back surface of the insulated plate 17 correspond to the surfaces of the respective holding jigs 18 in the hood on the same plane as the plane including the surface of the substrate holding jig 18 on which the substrate is placed. , Provided. The insulated plate 17 is provided in the first hood 13 so as not to come out from the first and second hood openings. Insulated board 1
The length of the side of the holding jig 18 that faces one side of the holding jig 18 is the same as the length of the side of the holding jig 18.

The insulated plate 17 needs to be separated from the electrode by a distance such that no discharge occurs between the insulated plate 17 and the electrode and must be insulated from the surrounding conductor.

Further, the insulated plate 17 has the function of improving the uniformity of the film thickness of the coating film, and when it is desired to increase the distance between the substrate support 15 and the electrode 12 in consideration of the transportation of the substrate support 15. It is also effective.

The substrate has a distance of 5 between the upper and lower electrodes.
It is preferably provided in the range of 5 to 65%.

A substrate support 15, that is, a heater for heating or retaining the temperature of the substrate is provided in the reaction vessel 11.

If the second hood 14 and the conductor plate 16 provided outside the hood surrounding the electrode are not provided, the floating potential becomes large, and therefore, the space between the reaction vessel 11 and the first hood 13 and the substrate support. Plasma is generated between 15 and the reaction vessel 11.

Examples will be shown below.

[Embodiment 1] FIG. 2 shows an embodiment of the present invention.

The reaction vessel 21 is electrically at ground potential,
It has a reactive gas inlet 22 for introducing a reactive gas necessary for forming a film and a gas outlet 23 for discharging an unnecessary reaction product, an unreacted reactive gas and a carrier gas. Is provided with a heater 26 for heating the substrate 25 through the substrate support 24.

The substrate support 24 has an internal size of 7
The substrate holding jig 33 is made of aluminum having a size of 5 cm, a width of 75 cm, and a height of 25 cm. Since it is omitted in the drawing, the number of substrate holding jigs 33 and the size of the substrate support 24 do not match,
Actually, the jigs 33 for holding the substrate are arranged at the intervals described above so as to match the size of the substrate support 24.

The heater 26 is an infrared lamp heater having a total length of 68 cm and a light emitting portion length of 62 cm. The heater 26 is from the upper hoods 29 and 30 in the reaction vessel 21 to the lower hood 3.
11 are provided at intervals of 4 cm between 5 and 36 and are provided at a distance of 15 cm from the conductor plate 37 on the left and right sides in the drawing.

In the case of this drawing, reaction vessels are connected to the front side of the drawing and the back side of the drawing so as to be adjacent to each other, and between the reaction vessels are opened / closed to make them independent atmospheres. A valve is provided, and a heater is not provided for carrying the substrate support 24 and the like.

The heaters may be provided on the left and right sides in the reaction container as in this embodiment, or may be provided on the upper and lower portions of the electrodes 27 and 34. Further, the heaters 26 are arranged side by side so that the longitudinal direction of the infrared lamp heaters is perpendicular to the paper surface, but the heaters may be arranged upright from the front side of the drawing toward the back side so as to be parallel to the paper surface.

The electrodes 27 and 34 are installed so as to face each other vertically. This electrode is made of aluminum and is 75 cm x
A plurality of holes having a size of 75 cm, an opening ratio of 30% and a diameter of 6 mm are opened at a pitch of 9 mm.

The electrodes 27 and 34 are fixed to the reaction vessel 21 via an insulator 28. Of the hoods that cover the electrodes 27 and 34, the inner first hoods 29 (upper first hood) and 35 (lower side first hood) are both made of aluminum and have a diameter of 3 mm. 5m hole
A plurality of electrodes are opened at m pitches, and the electrodes 27,
34 covers the electrodes 27 and 34 with a distance of 1 to 10 mm, here a distance of 5 mm.

The outer second hoods 30 and 36 are made of the same material as the first hood, and have a plurality of holes with a diameter of 3 mm formed at a pitch of 5 mm. It covers the hoods 29 and 35 of.

The second hoods 30 and 36 are fixed to the reaction vessel 21 and are kept at the ground potential like the reaction vessel. First hoods 29, 35 and second hoods 30, 36
Is electrically insulated from the first hood 29, 35.
Is fixed to the second hoods 30, 36 via an insulator 31.

Further, the plates 32 insulated in the first hoods 29 and 35 are arranged in the same plane as the substrate holding jig 33 provided on the substrate support 24, which will be described later, in the same number as the substrate holding jig 33. Provided.

This insulated plate 32 is used for the first hood 2
It is fixed to 9, 35 and is insulated from both conductors along with the first hoods 29, 35.

The substrate support 24 is provided so as to be sandwiched between a pair of opposing two hoods which cover the electrodes 28 and 34.

The substrates 25 are arranged on both sides of the substrate holding jig 33. Here, the substrate 25
Is 60% of the distance between electrodes 27 and 34,
That is, they are provided at a distance of 20% from the electrode 27 and 20% from the electrode 34.

The outside of the substrate support 24 is surrounded by the conductor 37 except for the areas where the electrodes face each other. The conductor 37 is made of aluminum, and is similar to the first and second hoods in that a plurality of holes having a diameter of 3 mm are formed at a pitch of 5 mm, and the substrate support 24 has an insulator 38 on the conductor 37. The substrate support 24 and the substrate holding jig 3 are fixed at a distance of 5 mm.
3, and the substrate 25 will be insulated from the surrounding conductors.

FIG. 3 shows the appearance of the hood (first hoods 29, 35 and second hoods 30, 36) and the substrate support 24.

While the inside of the reaction vessel 21 is evacuated by the vacuum pump from the gas discharge port 23, the reactive gas is supplied from the reactive gas introduction port 22 to obtain an appropriate discharge pressure. The reactive gas is passed through the plurality of holes of the first and second hoods to the upper electrode 2
7, reaches the substrate 25 through a plurality of holes of the electrode 27. On the contrary, unnecessary reaction products, unreacted reactive gas, and carrier gas are discharged from the plurality of holes of the lower electrode 34 through the plurality of holes of the first hood 35 and the second hood 36 of the lower hood. It reaches the outlet 23 and is exhausted to the outside of the reaction vessel 21.

A high frequency power source is connected to the electrodes 27 and 34 as shown in FIG. 8A, and when high frequency power is supplied, plasma is generated between the electrodes 27 and 34. A high frequency power source having a frequency of 13.56 MHz was used.

Each first hood 29, 35 and the substrate support 2
The distance to 4 was such that the plasma did not leak into the reaction vessel from the space surrounded by the hood and the substrate support, here 5 mm.

Similarly, the distance between the second hoods 30 and 36 and the conductor plate 37 is set to 5 mm in this case, so that the space surrounded by the hood and the substrate support does not leak into the reaction vessel.

By doing so, the plasma potential in the plasma and the potential of the substrate become small, so that sputtering on the substrate is eliminated and damage to the film is eliminated.

Further, since there is the insulated plate 32, the formed film is uniformly formed on the substrate as shown in FIG.

FIG. 4 schematically shows the state of the film formed by using the apparatus of the present invention.

Next, the effect of placing the insulated plate 32 will be described. FIG. 5 shows the relationship between the substrate 25, the upper electrode 27, and the lower electrode 34. Here, the upper and lower electrodes are separated by a distance such that discharge occurs between the substrate and the electrode. Has become.

A cross-sectional view of the coating film formed in this state is shown on the right side of the drawing. As can be seen from the figure, the thickness of the film decreases from the central portion of the substrate toward both ends of the substrate (portions indicated by A), and after passing a certain point, the thickness increases again ( (Portion indicated by B).

As described above, when the distance between the substrate and the electrode is large, the film thickness cannot be uniform.

Therefore, when the distance between the substrate 25 and the upper electrode 27 and the lower electrode 34 is reduced as shown in FIG. 6 (10 mm or less), the obtained coating film is formed on the substrate as shown in the sectional view on the right side of the drawing. The state is such that the thickness of the coating film decreases from the central portion toward both ends of the substrate, and there is no portion indicated by B in FIG. However, in this case, the film thickness becomes thin at both ends of the substrate.

According to the present invention, as shown in FIG. 4, by inserting an insulated plate 32 between the substrate 25 and each of the upper electrode 27 and the lower electrode 34, the film is insulated not only on the substrate but also on the substrate. It is formed up to the plate 32, and the film thickness distribution of the coating film on the substrate is brought close to a constant value as shown in the sectional view on the right side of the drawing.

Here, as shown in FIG. 6, the distance between the electrodes 27 and 34 is set to 10 mm, the case where a film is formed on the substrate without inserting the insulated plate 32, and the apparatus of this embodiment is used. Table 1 shows the results of comparison of the uniformity of the thickness of the coating formed between the case where the coating was formed on the substrate by

In both the examples and the comparative examples, the conditions for forming the film are as follows: SiH ₄ 100% is used as a reactive gas, and a plasma vapor phase reaction is caused at a substrate temperature of 200 ° C. to form an amorphous silicon film on the substrate. The thickness is 4000 at the center of the substrate
It was made to be Å.

The film thickness of the obtained coating was measured on the substrate as shown in FIG.
Table 1 shows the results obtained by measuring at points A, B, C, D and E shown in 0.

[0080]

[Table 1]

As can be seen from this result, the insulated plate 32 is effective for making the coating uniform.

[Embodiment 2] In this embodiment, as shown in FIG. 7, the electrodes 27 and 34 in the device of Embodiment 1 are divided into main electrodes 71 and 72 and sub electrodes 73 and 74. Is.

Further, the main electrodes 71 and 72 and the sub electrode 7
Of the hoods covering 3, 74, the first hood inside Example 1 is divided into upper shield plates 77, 78 for covering the upper parts of the electrodes and side shield plates 79, 80 for covering the side parts of the electrodes. Is.

The structure of each part other than each device part described below is the same as that of the first embodiment.

The upper shield plates 77 and 78 are both made of aluminum, and each has a plurality of holes with a diameter of 3 mm opened at a pitch of 5 mm.
72 is a distance such that no discharge occurs, here 5 mm
The electrodes 71 and 72 are covered at intervals of.

The side shield plates 79, 80 are plates made of aluminum, and are spaced from the tips of the sub-electrodes 73, 74 by a distance such that no discharge occurs, here, by 5 mm, the electrodes 73, 74 are respectively arranged. It surrounds the sides of the.

The second hoods 81 and 85 are made of aluminum as in the first embodiment, and a plurality of holes having a diameter of 3 mm are formed at a pitch of 5 mm. Here, the upper shield plates 77, 78 and 5 Side shield plate 7
It covers 9,80.

The second hoods 81 and 85 are reaction vessels 86.
It is fixed to the ground and is kept at the ground potential like the reaction vessel.

The upper shield plates 77 and 78, the side shield plates 79 and 80, and the second hoods 81 and 85 are made of the insulator 8
It is fixed to the second hoods 81 and 85 via 7.

The main electrodes 71 and 72 are made of aluminum and have a size of 75 cm × 75 cm, and have a plurality of holes having a diameter of 3 mm and a pitch of 5 mm and an opening ratio of 30%.

The sub-electrodes 73 and 74 were made of aluminum similarly to the main electrode, and used had a plurality of holes with a diameter of 6 mm opened at a pitch of 9 mm. The sub-electrodes 73 and 74 may be 6-mesh mesh electrodes.

As shown in FIG. 7, the shape of the sub-electrodes 73 and 74 is such that the tip portion 75 is wider than the portion connected to the main electrodes 71 and 72. Is continuous from the front side to the back side of the paper along the substrate.

The tip portions 75 of the sub-electrodes 73 and 74 are placed closer to the substrate than the edge portion 82 of the insulated plate 76 closer to the electrodes. This is important for surely generating plasma between the substrate holding jig 83 and the adjacent substrate support 84 and between the adjacent substrate holding jigs 83.

As the sub-electrodes 73 and 74, those manufactured separately from the main electrode may be connected and used, but here, the integrated ones are used.

Others, the substrate support 84, the substrate holding jig 83, etc. are the same as in the first embodiment.

Even when the thickness of the coating film on the substrate varies depending on the place where the substrate is placed by using such a device, the lengths of the sub-electrodes 73 and 74 are made close to the substrate, and It is possible to easily control the state of plasma by appropriately adjusting the distance.

[Embodiment 3] In this embodiment, the sub-electrode of Embodiment 2 is made independent for each of the opposing sub-electrodes to form a pair of electrodes, and a high frequency power source is provided to each of the pair of electrodes.
It is connected as shown in (a).

The apparatus of this example is shown in FIG. The same reference numerals are given to the parts having the same structures as those in the second embodiment.

This apparatus is composed of a metal upper electrode support 91 and a lower electrode support 90 corresponding to the main electrode of the second embodiment.
The second embodiment has an electrode having a structure composed of a plurality of upper electrodes 92, 93, 94, 95 corresponding to sub-electrodes and lower electrodes 96, 97, 98, 99 facing each other.

The upper electrode and the upper electrode support, and the lower electrode and the lower electrode support are connected via an insulator. The electrode support is made of aluminum and has an aperture ratio of 30% and a diameter of 3 mm.
A plurality of holes with a pitch of 5 mm were used, and a plurality of holes with a diameter of 6 mm were formed with a pitch of 9 mm for the upper electrode and the lower electrode.

As shown in FIG. 9, the shape of the upper electrode and the lower electrode is such that the tips are wider than the portions connected to the upper electrode support 91 and the lower electrode support 90. , Each of these electrodes is continuous from the front side to the back side of the drawing along the substrate.

Upper electrode, lower electrode and side shield plate 7
The relationship between 9, 80 and the insulated plate 76 is the same as in the second embodiment.

Upper electrode 92 and lower electrode 9 opposing it
6 shows a high frequency power source (13.56) as shown in FIG.
MHz) is connected to the upper electrode 93 and the lower electrode 9
Similarly, a high frequency power source is independently connected between the upper electrode 94 and the upper electrode 94, between the upper electrode 94 and the lower electrode 98, and between the upper electrode 95 and the lower electrode 99.

Since the electric power supplied to each of the electrodes can be adjusted by using the device having such a configuration, for example, the coating film formed on the substrate between the upper electrode 94 and the lower electrode 98 cannot be changed. Even if the thickness of the film is different from that of the substrate at the location, it is possible to adjust the power supplied to the upper electrode 94 and the lower electrode 98 in that portion, so that the thickness of the film is made uniform. It becomes possible to do.

[0105]

[Effects] The present invention is provided in a reaction vessel in a plasma gas phase reaction apparatus equipped with a reaction vessel, a system for supplying a reactive gas to the reaction vessel, and an exhaust system for exhausting unnecessary reaction products. A pair of opposed electrodes are covered by a hood except for the areas facing each other, the hood having a first hood electrically insulated from the electrodes on the inner side and a second hood having a ground potential on the outer side. The substrate support for supporting the substrate has a double structure consisting of a hood, and has a structure in which the substrate is surrounded by a frame, except for the area where the electrodes face each other, and the substrate support is the outside thereof. Is at a ground potential and is covered with a conductor plate electrically insulated from the substrate support, and is supplied from the pair of electrodes to a space surrounded by the pair of hoods and the substrate support. Generated by electricity Since the plasma gas phase reaction device having a structure in which the pair of hoods and the substrate support are provided so as to trap the plasma, the plasma potential in the plasma and the potential of the substrate become small, so that sputtering to the substrate is eliminated, No damage to the coating. At the same time, since the insulator is inserted between the substrate support and the conductor plate, the heat retention effect of the substrate support can be improved, and the heating efficiency of the substrate can be improved.

Then, in a plasma gas phase reaction apparatus equipped with a reaction vessel, a system for supplying a reactive gas to the reaction vessel, and an exhaust system for exhausting unnecessary reaction products, a pair of reactors provided in the reaction vessel The electrodes facing each other are covered with a hood except for the areas facing each other, and the substrate support having a holding jig for holding the substrate inside is a substrate except for the areas where the electrodes face each other. It is assumed that the hood has a structure surrounded by a frame, and an insulated plate is provided in the hood by making the surface of the plate correspond to the surface on which the substrate is formed, and thereby make the coating uniform. Is something that can be done.

[Brief description of drawings]

FIG. 1 is a diagram showing a part of a plasma vapor phase reaction apparatus of the present invention.

FIG. 2 is a diagram showing a plasma vapor phase reaction device of the present invention.

FIG. 3 is a diagram showing a substrate support of the plasma vapor phase reaction apparatus of the present invention.

FIG. 4 is a view showing a film formed by using the plasma vapor phase reaction apparatus of the present invention.

FIG. 5 is a view showing a film formed by a conventional plasma vapor phase reaction apparatus.

FIG. 6 is a diagram showing a film formed by a conventional plasma vapor phase reaction apparatus.

FIG. 7 is a diagram showing a plasma vapor phase reaction device of the present invention.

FIG. 8 is a diagram showing a method of power supply used in the present invention.

FIG. 9 is a diagram showing a plasma vapor phase reaction device of the present invention.

FIG. 10 is a diagram showing locations of film thickness measurement points of a film.

[Drawing reference number]

 21 ... Reaction container 24 ... Substrate support 25 ... Substrate 37 ... Conductor plate 27, 34 ... Electrode 26 ... Heater 29, 35 ... First hood 30, 36 ... ..Second hood

Claims (2)

(57) [Claims] 1. A plasma gas phase reaction apparatus comprising a reaction container, a system for supplying a reactive gas to the reaction container, and an exhaust system for exhausting unwanted reaction products, a pair of which is provided in the reaction container. Of the electrodes facing each other are covered by a hood except for their opposing areas, the hood having a first hood electrically insulated from the electrodes on the inside and a second hood having a ground potential on the outside. And a substrate support for supporting the substrate has a structure in which the substrate is surrounded by a frame except for the regions facing the electrodes, and the substrate support has an outer surface. The structure is covered with a conductor plate which is at ground potential and electrically insulated from the substrate support, and is supplied from the pair of electrodes to a space surrounded by the pair of hoods and the substrate support. Plas generated by electricity Plasma gas phase reactor, characterized in that provided for the pair of hood to confine said substrate support 2. A plasma gas phase reaction apparatus comprising a reaction container, a system for supplying a reactive gas to the reaction container, and an exhaust system for exhausting unwanted reaction products, a pair provided in the reaction container. The electrodes facing each other are covered with a hood except for the areas facing each other, and the substrate support having a holding jig for holding the substrate inside, except for the areas facing the electrodes, The plasma gas is characterized by having a structure in which the substrate is surrounded by a frame, and an insulated plate is provided in the hood with the surface of the plate corresponding to the formation surface of the substrate. Phase reactor