JPH04283922A - Plasma vapor-phase reaction apparatus - Google Patents

Abstract

PURPOSE:To eliminate sputtering onto a substrate and to prevent impairment of a film by providing a pair of hoods and substrate supports so that they confine plasma generated by a power supplied from a pair of electrodes. CONSTITUTION:When a high-frequency power source is supplied to an electrode 27 and an electrode 34, plasma is generated between the electrode 27 and the electrode 34. A gap between each of first hoods 29 and 35 and a substrate support 24 is made to be of such a size as not to allow the plasma to leak into a reaction vessel from a space surrounded by the hoods and the substrate supports. Besides, a gap between each of second hoods 30 and 36 and a conductor plate 37 is made, likewise, to be of such a size as not to allow the plasma to leak into the reaction vessel from the space surrounded by the hoods and the substrate supports. Since the plasma potential in the plasma and the potential of a substrate are made small by this constitution, sputtering onto the substrate is eliminated and impairment of a film is eliminated.

Description

[Detailed description of the invention]

0001

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gas phase reactor using plasma.

0002

[Prior Art] A reaction apparatus conventionally used to form a thin film on a substrate using plasma gas phase reaction includes a reaction vessel and a means for exhausting gases such as raw material gas and reaction products in the reaction vessel. , a means for supplying gas that is a raw material for the thin film into the reaction vessel, a means for measuring the pressure within the reaction vessel, a means for adjusting the pressure within the reaction vessel to a predetermined value, and a means for supplying a substrate within the reaction vessel. It has means for heating, etc., and inside the reaction vessel there is a flat electrode (power electrode) connected to a plasma generation power source, and a flat electrode (power electrode) installed in parallel with the electrode and maintained at ground potential. Those having flat counter electrodes are generally used. When forming a thin film using this apparatus, the substrate is placed on a counter electrode and a plasma vapor phase reaction is caused to perform processing such as film formation.

However, when film formation is performed using such an apparatus, the following problems arise. First, a phenomenon occurs in which the reaction products adhere to the inner wall of the reaction vessel in addition to the substrate in the form of flakes, and as a result, the reaction products fall onto the substrate during thin film fabrication, resulting in the formation of pinholes in the thin film. It's been happening. Since the substrate is arranged on a flat electrode, a problem has arisen in that it is not possible to fabricate a large number of films.

[0004] As a device for solving such problems, a substrate is used to confine plasma only in the area where the substrate is placed in the reaction vessel and to prevent the plasma from spreading to the inner wall of the reaction vessel. A frame body called a container that surrounds the substrate from four sides is arranged around the substrate, and the electrodes are separated from the substrate, and the upper and lower parts of the frame body that are not surrounded by the frame body are covered with electrodes. An apparatus for performing a plasma gas phase reaction (hereinafter referred to as a positive column plasma C
(called a VD device) was devised.

[0005] Since this apparatus has a structure in which the substrate is stood vertically and surrounded by a frame, it is possible to form films on multiple substrates at once, and in order to solve the above-mentioned problem. is an effective device.

However, new problems have arisen even in such devices. There are two methods shown in FIG. 8 that are commonly used as methods for supplying discharge power to the electrodes in the positive column plasma CVD apparatus. Figure 8
The method shown in (a) explains a two-power supply method in which two power supplies are independently supplied to each pair of electrodes via a matching module, and FIG. A balun system in which the power is supplied to each of a pair of electrodes via the electrode 81 will be explained.

In these power supply systems, a blocking capacitor is inserted between the electrode and the matching module to apply a self-bias to the substrate.

[0008] In the case of a positive column plasma CVD apparatus, no matter which of the above-mentioned power supply systems is adopted, self-bias is not applied to the electrodes much regardless of the presence or absence of a blocking capacitor. Of course, if there is no blocking capacitor, no self-bias is applied at all.

In this case, the plasma space potential is approximately VPP
/4 to VPP/2, and when the container is at ground potential, the container will receive sputtering with energy corresponding to the plasma space potential. The same is true when the substrate is conductive and at ground potential, in which case the coating on the substrate is susceptible to significant damage.

Even if the container is at ground potential, if the board is electrically insulated from the container, the board surface will be electrically insulated from the container, so a certain floating potential will occur. In this case, the difference between the plasma space potential and the floating potential is smaller than the difference between the plasma space potential and the ground potential, so the sputtering is lower than when both the container and the substrate are at the ground potential. The damage to the coating caused by this will be reduced.

However, even in this case, the plasma near the substrate and the plasma near the susceptor at the boundary between the electrically insulated substrate and the container at ground potential, especially the susceptor, are influenced by the substrate and the susceptor. Since the state of the film is changing, the film thickness and film quality are different between the portion near the edge of the substrate and the center portion of the substrate, and the uniformity of the film thickness and film quality is impaired.

On the other hand, in the case of a positive column plasma CVD apparatus, since the container is in partial contact with the reaction vessel, the heat of the substrate easily escapes to the reaction vessel, making it difficult to heat and keep warm. Depending on the structure of the substrate, temperature uniformity may be impaired, which has been a problem when heating the substrate.

Furthermore, in the case of a positive column plasma CVD apparatus,
Since a large number of substrates can be processed, it is necessary to increase the volume of the plasma, and therefore the electrode spacing must be widened, resulting in the problem that the equipment becomes large and requires a large amount of RF power. was.

[0014]

[Problems to be Solved by the Invention] The present invention aims to reduce the damage to the film during film formation and to improve the uniformity of the film thickness and film quality, which the positive column plasma CVD apparatus as described above has. The objective is to improve the heating efficiency of the substrate.

[0015]

[Means for Solving the Problems] In order to solve the above problems, the present invention comprises a reaction vessel, a system for supplying a reactive gas to the reaction vessel, and an exhaust system for exhausting unnecessary reaction products. In a plasma gas phase reactor, a pair of opposing electrodes provided in a reaction vessel are covered with a hood except for opposing regions, and the hood has a first electrode electrically insulated from the electrodes inside. The substrate support body for supporting the substrate surrounds the substrate with a frame except for the area facing the electrodes. The substrate support has a structure in which the outside thereof is covered with a conductive plate that is at ground potential and electrically insulated from the substrate support, and the pair of hoods and the substrate support The plasma vapor phase reactor is provided with the pair of hoods and the substrate support so as to confine plasma generated by electric power supplied from the pair of electrodes in a space surrounded by the hoods and the substrate support.

The present invention will be described in detail below with reference to the drawings. FIG. 1 shows a reaction vessel 11, an electrode 12, a first hood 13,
The relationship between the second hood 14 and the substrate support 15 is shown. Although only the upper half of the reaction vessel is shown in this figure, the lower half also has electrodes, a first hood, and a second hood in the same way as shown in FIGS. 2, 7, and 9. , it goes without saying that a substrate support is provided.

Although the reaction vessel 11 is not shown, it includes a system for supplying reactive gas, an exhaust system for exhausting unnecessary reaction products, a pressure control system for adjusting the pressure to a predetermined value, and a pressure measurement system for monitoring the pressure. system, and is maintained at ground potential.

Although not shown, a pair of electrodes 12 are provided facing each other, and a plasma generation power source is connected to each electrode through a matching module, or a single power source is connected to the matching module through a balun. ing.

[0019] The electrode has a punched shape in which multiple holes are made in a plate, or a mesh shape, and the aperture ratio is made as large as possible without impairing its function as a flat plate electrode. . Of course, a flat plate electrode may be used, but a punched or mesh shaped electrode is preferable.

The reason for this is that the area (opening ratio) of the holes in the punching or mesh can be increased relative to the area of the electrode. Increasing this aperture ratio means that the current flowing through the electrode becomes smaller compared to a plate-like flat electrode, and as a result, the voltage increases, which has the effect of making it easier for plasma to spread to the center between the electrodes. ,
This is also advantageous when increasing the size of the device.

The hood covering the electrode has a double structure consisting of a first hood 13 and a second hood 14, and covers the electrode except for the area where the pair of electrodes face each other. The first hood 13 is electrically insulated from the electrode 12 and the reaction vessel 11.

The second hood 14 is fixed to the reaction vessel 11 and is electrically maintained at ground potential.

[0023] The first hood and the second hood have a punching shape in which a plurality of holes are made in a plate, similar to the electrodes;
It is preferable to have a mesh shape. This is to introduce reactive gas between the electrodes.

However, in the first hood, it is also possible to construct the part covering the upper part of the electrode and the part covering the side surface of the electrode from different materials. For example, the part that covers the top of the electrode can be punched or mesh-shaped, and the part that covers the sides of the electrode can be plate-shaped. Even in these cases, reactive gas can be made to have no effect on the conduction between the electrodes. This also applies to the second hood, in which the part that covers the upper part of the electrode 12 has a punching shape or a mesh shape, so that the side surface of the electrode is covered with a punched shape or a mesh shape. The covering portion can be plate-shaped.

The first hood 13 is spaced apart from the electrode 12 by a distance that does not cause discharge between the two, for example, in the range of 1 to 10 mm.

The first hood may be made of any material that can be insulated from surrounding conductors, such as quartz, aluminum or other metals.

The second hood 14 may be made of a material that can be maintained at a ground potential, such as metal.

The first hood 13 is supported by the second hood via an insulating material such as ceramics or Teflon. The distance between the first hood 13 and the second hood 14 is within a range where no discharge occurs between them, for example, 1~
They are spaced apart within a range of 10 mm.

The substrate support 15 has a substrate holding jig 18 for holding the substrate, and the holding jig is a plate-like member on which the substrate can be placed. , which has the function of fixing the substrate. However, as long as the substrate support 15 has the function of fixing the substrate, the shape is not limited to a plate shape.

This holding jig 18 has a structure in which a frame surrounds the holding jig 18 except for the area where the opposing electrodes are provided.

The substrate support 15 is covered with a conductor plate 16 that is electrically at ground potential. This conductor plate 16 is transferred to the reaction vessel 1 via a transport mechanism or a support stand.
Since it is electrically connected to 1, the conductor plate 16
will be held at ground potential.

The substrate support 15 and the conductive plate 16 are connected by an insulating material such as ceramics or Teflon similar to the above-mentioned insulating material.

The fact that the substrate support 15 and the conductive plate 16 are connected by an insulating material in this way makes it difficult to conduct heat compared to metal, which improves heat retention during film formation and makes it easier to It also has the effect of being able to save energy.

The distance between the substrate support 15 and the electrode 12 or the distance between the substrate holding jig 18 and the electrode 12 is such that no discharge occurs between them, for example, within a range of 1 to 10 mm. There is.

The distance between the substrate support 15 and the first hood 13 and the distance between the conductive plate 16 and the second hood 14 were set to within 5 mm. If the distance exceeds 5 mm, the plasma will reach the substrate support 15.
and reaction vessel 1 from the space created by the first and second hoods.
This is because it leaks into the unit.

Since the substrate support 15 is electrically insulated, the substrate support 1 can be used regardless of whether the substrate is a conductor or an insulator.
Since it has the same floating potential as 5, the supplied RF
The difference between the plasma space potential and the substrate surface potential becomes small regardless of the magnitude of the voltage, and the damage caused by sputtering is reduced regardless of the magnitude of the plasma space potential.

The substrate support 15 is designed to orient the surface of the substrate to be formed along gravity, so that even if the reaction product adhering to the upper part of the reaction vessel falls as flakes, it will not be coated on the surface to be formed. I try not to wear it.

The substrate support 15 may be made of any material that can be insulated from surrounding conductors, such as quartz, aluminum or other metals.

The conductor plate 16 may be made of a material that can be maintained at a ground potential, such as metal.

Further, in the present invention, in order to make the thickness of the formed film uniform, an insulated plate is installed inside the hood.
The plate is provided so that its surface corresponds to the formation surface of the substrate.

[0041] Here, providing the surface of the insulated plate in correspondence with the surface on which the substrate is formed means that when a film is formed on the substrate, the film is formed on the surface of the insulated board. This also means providing an insulated plate surface between the electrode 12 and the substrate holding jig 18 to prevent discharge from occurring.

In FIG. 1, the surface of the insulated plate 17 is placed on the same plane as the surface of the substrate holding jig 18 on which the substrate is placed.

[0043] Inside the first hood 13 is an insulated plate 17.
are provided in the same number as the number of substrate holding jigs 18,
The front and back surfaces of the insulated plate 17 correspond to the surfaces of the respective holding jigs 18 in the hood on the same plane as the surface of the substrate holding jigs 18 on which the substrate is placed. , is provided. This insulated plate 17 is provided within the first hood 13 and is prevented from coming out from the first and second hood openings. insulated board 17
The length of one side of the holding jig 18 and the opposite side are:
It has the same length as the side length of the holding jig 18.

The insulated plate 17 must be placed at a distance from the electrodes so that no discharge occurs between them, and must be insulated from surrounding conductors.

In addition, this insulated plate 17 has the function of improving the uniformity of the film thickness of the coating, and is also used when it is desired to increase the distance between the substrate support 15 and the electrode 12 due to the transportation of the substrate support 15. It is also effective for

The distance between the upper and lower electrodes of the substrate is 5
It is preferable to set it in the range of 5 to 65%.

A substrate support 15, ie, a heater for heating or keeping the substrate warm, is provided inside the reaction vessel 11.

If there is no second hood 14 and conductor plate 16 provided on the outside of the hood surrounding the electrode, the floating potential will be large. Plasma is generated between 15 and reaction vessel 11.

Examples are shown below.

[Embodiment] [Embodiment 1] FIG. 2 shows one embodiment of the present invention.

The reaction vessel 21 is electrically at ground potential,
It has a reactive gas inlet 22 for introducing the reactive gas necessary for film formation and a gas outlet 23 for discharging unnecessary reaction products, unreacted reactive gas, and carrier gas, and the interior of the reaction vessel 21 is A heater 26 is provided for heating the substrate 25 through the substrate support 24.

The substrate support 24 has an internal size of 7 mm in length.
It is made of aluminum and measures 5 cm in width, 75 cm in width, and 25 cm in height, and board holding jigs 33 are provided inside at intervals of 6 to 9 cm. Since it is omitted in the drawing, the number of substrate holding jigs 33 and the size of the substrate support 24 do not match,
Actually, the substrate holding jig 33 is arranged at the above-mentioned intervals so as to match the size of the substrate support 24.

The heater 26 is an infrared lamp heater with a total length of 68 cm and a light emitting part length of 62 cm.
, 36 at 4 cm intervals, and 15 cm apart from the conductor plate 37, on each of the left and right sides in the drawing.

In this drawing, reaction vessels are connected adjacent to the front side of the drawing and the back side of the paper, and there is an opening/closing mechanism between the reaction vessels to create an independent atmosphere for both reaction vessels. A valve is provided, and no heater is provided for transporting the substrate support 24 or the like.

In addition to being provided on the left and right sides of the reaction vessel as in this embodiment, the heaters can also be provided above and below the electrodes 27 and 34. Further, although the heaters 26 are arranged horizontally so that the longitudinal direction of the infrared lamp heaters is perpendicular to the paper surface, the heaters may be arranged vertically from the front side to the back of the drawing so as to be parallel to the paper surface.

[0055] The electrodes 27 and 34 are placed vertically facing each other. This electrode is made of aluminum and is 75cm x
It has a size of 75 cm, and has multiple holes with a diameter of 6 mm at a pitch of 9 mm with an aperture ratio of 30%.

[0056] The electrodes 27 and 34 are fixed to the reaction vessel 21 via an insulator 28. Of the hoods that cover the electrodes 27 and 34, the inner first hoods 29 (upper first hood) and 35 (lower first hood) are both made of aluminum, each with a diameter of 3 mm. hole is 5m
The electrodes 27,
34 covers the electrodes 27 and 34, respectively, with an interval of 1 to 10 mm, here an interval of 5 mm.

The second outer hoods 30 and 36 are made of the same material as the first hood, and have a plurality of holes with a diameter of 3 mm at a pitch of 5 mm. covers the hoods 29 and 35 of.

The second hoods 30 and 36 are fixed to the reaction vessel 21, and are maintained at ground potential like the reaction vessel. First hoods 29, 35 and second hoods 30, 36
The first hoods 29, 35 are electrically insulated from the first hoods 29, 35.
are fixed to the second hoods 30 and 36 via an insulator 31.

Furthermore, insulated plates 32 are arranged in the first hoods 29 and 35 in the same number of substrate holding jigs 33 provided on the substrate support 24 in the same plane as the substrate holding jigs 33, which will be described later. Established.

This insulated plate 32 serves as the first hood 29
, 35, and is insulated from any conductor together with the first hoods 29, 35.

A substrate support 24 is provided between a pair of opposing hoods that cover the electrodes 28 and 34.

The substrates 25 are arranged on both sides with the substrate holding jig 33 in between. Here, the substrate 25
is at 60% of the distance between electrode 27 and electrode 34,
That is, it was provided at a distance of 20% from the electrode 27 and 20% from the electrode 34.

The outside of the substrate support 24 is surrounded by a conductor 37 except for the opposing regions of the electrodes. The conductor 37 is made of aluminum, and has a plurality of holes with a diameter of 3 mm at a pitch of 5 mm, similar to the first and second hoods, and the substrate support 24 has an insulator 38 on the conductor 37. The substrate support 24 and the substrate holding jig 33 are fixed at intervals of 5 mm.
, and substrate 25 will be insulated from surrounding conductors.

FIG. 3 shows the appearance of the hoods (first hoods 29, 35 and second hoods 30, 36) and the substrate support 24.

While the inside of the reaction vessel 21 is evacuated from the gas outlet 23 with a vacuum pump, a reactive gas is supplied from the reactive gas inlet 22 to obtain an appropriate discharge pressure. The reactive gas flows through the plurality of holes in the first and second hoods to the upper electrode 2.
7, passes through a plurality of holes in the electrode 27, and reaches the substrate 25. Conversely, unnecessary reaction products, unreacted reactive gas, and carrier gas are exhausted from the plurality of holes in the lower electrode 34 through the plurality of holes in the first hood 35 and the second hood 36 of the lower hood. It reaches the outlet 23 and is exhausted to the outside of the reaction vessel 21.

A high frequency power source is connected to the electrode 27 and the electrode 34 as shown in FIG. 8(a), and when the high frequency power is supplied, plasma is generated between the electrode 27 and the electrode 34. A high frequency power source with a frequency of 13.56 MHz was used.

Each first hood 29, 35 and substrate support 2
4 was set to such an extent that plasma would not leak into the reaction vessel from the space surrounded by the hood and the substrate support, and was set to 5 mm here.

Similarly, the distance between the second hoods 30, 36 and the conductive plate 37 was set to a value of 5 mm to prevent leakage from the space surrounded by the hood and the substrate support into the reaction vessel.

By doing this, the plasma potential in the plasma and the potential of the substrate are reduced, so that sputtering to the substrate is eliminated and damage to the coating is eliminated.

Furthermore, since there is an insulated plate 32, the formed film is uniformly formed on the substrate as shown in FIG.

FIG. 4 schematically shows the appearance of a film formed using the apparatus of the present invention.

Next, the effect of placing the insulated plate 32 will be described. FIG. 5 shows the relationship between the substrate 25, the upper electrode 27, and the lower electrode 34. Here, the upper and lower electrodes are separated by a distance sufficient to cause discharge between the substrate and the electrode. It has become.

A sectional view of the coating formed in this state is shown on the right side of the drawing. As can be seen from the figure, the thickness of the film decreases from the center of the substrate toward both ends of the substrate (areas indicated by A), and after a certain point, the thickness increases again ( The part indicated by B) is formed as follows.

[0074] When the distance between the substrate and the electrode is large as described above, uniformity in the thickness of the coating cannot be obtained.

Therefore, as shown in FIG. 6, if the distance between the substrate 25, the upper electrode 27, and the lower electrode 34 is made closer (10 mm or less), the resulting film will close to the substrate as shown in the cross-sectional view on the right side of the drawing. The thickness of the coating decreases from the center toward both ends of the substrate, resulting in a state where the portion shown by B in FIG. 5 is absent. However, in this case, the film thickness at both ends of the substrate becomes thinner.

As shown in FIG. 4, the present invention inserts an insulated plate 32 between the substrate 25, the upper electrode 27, and the lower electrode 34, so that the coating can be applied not only to the substrate but also to the insulated material. As shown in the cross-sectional view on the right side of the drawing, the film thickness distribution of the film on the substrate is kept close to constant.

Here, as shown in FIG. 6, there is a case where the distance between the electrodes 27 and 34 is 10 mm, and a film is formed on the substrate without inserting the insulated plate 32, and a case where the apparatus of this embodiment is used. Table 1 shows the results of a comparison of the uniformity of the thickness of the film formed on the substrate.

In both Examples and Comparative Examples, the conditions for film production were as follows: 100% SiH4 was used as the reactive gas, a plasma gas phase reaction was caused at a substrate temperature of 200 degrees, and an amorphous silicon film was formed on the substrate. 400mm thick in the center
It was formed to have a thickness of 0 Å.

The thickness of the obtained film was measured as shown in Figure 1 on the substrate.
Table 1 shows the results obtained by measuring at each point A, B, C, D, and E shown in Table 1.

[0080]

[Table 1]

As can be seen from this result, the insulated plate 32 is effective in making the coating uniform.

[Embodiment 2] This embodiment shows a case where the electrodes 27 and 34 in the device of Embodiment 1 are divided into main electrodes 71 and 72 and sub-electrodes 73 and 74 as shown in FIG. It is.

Furthermore, the main electrodes 71 and 72 and the sub-electrode 73
, 74, the inner first hood of Example 1 is divided into upper shield plates 77, 78 that cover the upper part of the electrodes and side shield plates 79, 80 that cover the sides of the electrodes. be.

The structure of each part other than each device part explained below is the same as that of the first embodiment.

The upper shield plates 77 and 78 are both made of aluminum and have a plurality of holes each having a diameter of 3 mm at a pitch of 5 mm.
72 is the distance that does not cause discharge, here it is 5mm.
The electrodes 71 and 72 are respectively covered with an interval of .

The side shield plates 79 and 80 are plates made of aluminum, and are spaced from the tips of the sub-electrodes 73 and 74 at a distance that prevents discharge from occurring, in this case 5 mm. It covers the sides of the

The second hoods 81 and 85 are made of aluminum as in the first embodiment, and have a plurality of holes with a diameter of 3 mm at a pitch of 5 mm. Here, the upper shield plates 77, 78 and Side shield plate 7
It covers 9.80.

[0088] The second hoods 81 and 85 are connected to the reaction vessel 86.
It is fixed at ground potential and is kept at ground potential like the reaction vessel.

The upper shield plates 77 and 78, the side shield plates 79 and 80, and the second hoods 81 and 85 are made of an insulator 8.
7 to second hoods 81 and 85.

The main electrodes 71 and 72 are made of aluminum and have a size of 75 cm x 75 cm, and are provided with a plurality of holes of 3 mm in diameter at a pitch of 5 mm with an aperture ratio of 30%.

The sub-electrodes 73 and 74 were made of aluminum similar to the main electrode, and had a plurality of holes with a diameter of 6 mm at a pitch of 9 mm. The sub-electrodes 73 and 74 may be 6-mesh mesh electrodes.

As shown in FIG. 7, the shapes of the sub-electrodes 73 and 74 are such that the tip portions 75 are expanded from the portions connected to the main electrodes 71 and 72, and each of the expanded portions is is continuous along the board from the front to the back of the page.

The tip portions 75 of the sub-electrodes 73 and 74 are located closer to the substrate than the edge 82 of the insulated plate 76 that is closer to the electrodes. This is important in order to reliably generate plasma between the substrate holding jig 83 and the adjacent substrate support 84 and between the adjacent substrate holding jigs 83.

Although the sub-electrodes 73 and 74 may be manufactured separately from the main electrode and connected to each other, an integrated electrode is used here.

Other components such as the substrate support 84 and the substrate holding jig 83 are the same as in the first embodiment.

By using such a device, even if the thickness of the coating on the substrate differs depending on where the substrate is placed, the lengths of the sub-electrodes 73 and 74 can be made close to the substrate, or The state of the plasma can be easily controlled by making appropriate adjustments such as moving it away.

[Embodiment 3] In this embodiment, the sub-electrodes of Embodiment 2 are separated into opposing sub-electrodes to form a pair of electrodes, and a high-frequency power source is connected to each of the pair of electrodes (FIG. 8).
It is connected as shown in a).

The apparatus of this embodiment is shown in FIG. Parts having the same structure as in the second embodiment are given the same reference numerals.

This device includes an upper electrode support 91 and a lower electrode support 90 made of metal, which correspond to the main electrode of Example 2,
The second embodiment has an electrode having a structure consisting of a plurality of upper electrodes 92, 93, 94, 95 corresponding to sub-electrodes and lower electrodes 96, 97, 98, 99 opposing each other.

[0100] The upper electrode and the upper electrode support, and the lower electrode and the lower electrode support are connected through an insulator, and the electrode support is made of aluminum and has an aperture ratio of 30% and a diameter of 3 mm.
The upper electrode and the lower electrode had a plurality of holes with a diameter of 6 mm at a pitch of 9 mm.

[0101] As shown in FIG. 9, the shapes of the upper and lower electrodes are such that their tips are wider than the parts where they connect to the upper electrode support 91 and the lower electrode support 90. , each of these electrodes is continuous along the substrate from the front to the back of the paper.

Upper electrode, lower electrode and side shield plate 79
, 80 and the insulated plate 76 are the same as in the second embodiment.

Upper electrode 92 and lower electrode 9 opposing it
6 is equipped with a high frequency power source (13.56
MHz) are connected, and the upper electrode 93 and the lower electrode 9
7, between the upper electrode 94 and the lower electrode 98, and between the upper electrode 95 and the lower electrode 99.

[0104] By using a device having such a configuration, it is possible to adjust the power supplied to each electrode, so that, for example, if the coating formed on the substrate between the upper electrode 94 and the lower electrode 98 is Even if the thickness of the film differs from that of the substrate at that location, it is possible to adjust the power supplied to the upper electrode 94 and lower electrode 98 in that area, so the film thickness can be made uniform. It becomes possible to do so.

[0105]

[Effect] The present invention provides a plasma gas phase reactor equipped with a reaction vessel, a system for supplying a reactive gas to the reaction vessel, and an exhaust system for exhausting unnecessary reaction products. A pair of opposing electrodes are each covered with a hood except for opposing areas, the hood having a first hood electrically insulated from the electrodes on the inside and a second hood at ground potential on the outside. The substrate support for supporting the substrate has a structure in which the substrate is surrounded by a frame except for the area facing the electrode, and the substrate support has a double structure consisting of a hood and a hood. is at ground potential,
and a structure covered with a conductive plate electrically insulated from the substrate support, and plasma generated by electric power supplied from the pair of electrodes in a space surrounded by the pair of hoods and the substrate support. Since the plasma vapor phase reactor has a structure in which the pair of hoods and the substrate support are provided so as to confine damage will be eliminated. At the same time, since an insulator is inserted between the substrate support and the conductor plate, it is possible to improve the heat retention effect of the substrate support, and it is possible to improve the heating efficiency of the substrate.

[0106] In a plasma gas phase reactor equipped with a reaction vessel, a system for supplying a reactive gas to the reaction vessel, and an exhaust system for exhausting unnecessary reaction products, a pair of A substrate support in which opposed electrodes are covered with a hood except for the opposing regions, and has a holding jig therein for holding the substrate, covers the substrate except for the opposing regions of the electrodes. The hood has a structure in which the hood is surrounded by a frame, and an insulated plate is provided in the hood so that the surface of the plate corresponds to the surface on which the substrate is formed, thereby making the coating uniform. It is something that can be done.

[Brief explanation of the drawing]

FIG. 1 is a diagram showing a portion of a plasma gas phase reactor according to the present invention.

FIG. 2 is a diagram showing a plasma gas phase reactor of the present invention.

FIG. 3 is a diagram showing a substrate support of the plasma vapor phase reactor of the present invention.

FIG. 4 is a diagram showing a film formed using the plasma vapor phase reaction apparatus of the present invention.

FIG. 5 is a diagram showing a film formed using a conventional plasma vapor phase reactor.

FIG. 6 is a diagram showing a film formed using a conventional plasma vapor phase reactor.

FIG. 7 is a diagram showing a plasma gas phase reactor of the present invention.

FIG. 8 is a diagram showing a power supply system used in the present invention.

FIG. 9 is a diagram showing a plasma gas phase reactor of the present invention.

FIG. 10 is a diagram showing locations of film thickness measurement points of a coating.

[Drawing code]

21...Reaction container 24...Substrate support 25... Board 37... Conductor plate 27, 34... electrode 26... Heater 29, 35...first hood 30, 36...second hood

Claims (2)

[Claims] Claim 1: A plasma gas phase reactor comprising a reaction vessel, a system for supplying a reactive gas to the reaction vessel, and an exhaust system for exhausting unnecessary reaction products, wherein a pair of The opposing electrodes are each covered with a hood except for opposing areas, the hood having a first hood electrically insulated from the electrodes on the inside and a second hood at ground potential on the outside. The substrate support for supporting the substrate has a structure in which the substrate is surrounded by a frame except for the area facing the electrodes, and the substrate support has a double structure consisting of It has a structure covered with a conductive plate that is at ground potential and electrically insulated from the substrate support, and is supplied from the pair of electrodes to a space surrounded by the pair of hoods and the substrate support. A plasma vapor phase reaction device characterized in that the pair of hoods and the substrate support are provided so as to confine plasma generated by electric power. [Claim 2] A plasma gas phase reactor comprising a reaction vessel, a system for supplying a reactive gas to the reaction vessel, and an exhaust system for exhausting unnecessary reaction products; The substrate support has a holding jig therein for holding the substrate, the electrodes facing each other are covered with a hood except for the opposing areas, and the substrate support has a holding jig inside for holding the substrate, except for the opposing areas of the electrodes. The plasma atmosphere has a structure in which the substrate is surrounded by a frame, and an insulated plate is provided in the hood so that the surface of the plate corresponds to the surface on which the substrate is formed. phase reactor