JPS58197769A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS58197769A
JPS58197769A JP57081133A JP8113382A JPS58197769A JP S58197769 A JPS58197769 A JP S58197769A JP 57081133 A JP57081133 A JP 57081133A JP 8113382 A JP8113382 A JP 8113382A JP S58197769 A JPS58197769 A JP S58197769A
Authority
JP
Japan
Prior art keywords
substrate
electrode
picture
chips
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57081133A
Other languages
Japanese (ja)
Inventor
Hiroyuki Gondo
権藤 浩之
Kazuhiro Takahara
高原 和博
Kenichi Oki
沖 賢一
Yasushi Okawa
泰史 大川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57081133A priority Critical patent/JPS58197769A/en
Publication of JPS58197769A publication Critical patent/JPS58197769A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays

Abstract

PURPOSE:To obtain a large-sized and high quality indicating or image pickup mechanism for the titled device by a method wherein a connection electrode, to be connected to the driving circuit for picture element electrode, is provided on the side face of the substrate having a systematically arranged picture element. CONSTITUTION:All regions excluding the pad part 3a on the end face 1a of a substrate and the input-output electrode part 5 of the active element on a driving circuit 4, are covered by a resist mask and Al is vapor-deposited thereon. Said mask is removed and a pad 3a is formed. As the picture element alone is left on the upper part of the substrate 1 and there exists no connection electrode between chips, the distance between the picture element electrode group and the substrate end face can be made to one half or smaller of the pitch of the picture electrode, thereby enabling to obtain a large picture of prescribed size for graphic indication, by connecting the pad parts 3a each other. Beautiful picture is constructed in simple constitution because of the upper surface of the substrate of IC chip is all photo emitting region and the wiring between chips is needless.

Description

【発明の詳細な説明】 (a)  発明の技術分野 本発明は半導体集積回路装置(以下tC装置と言う)に
係かり、更に具体的にば°半導体基板表面に表示素子あ
るいは受光素子ならびにそれら素子に対する駆動回路を
一体的に集積化した複数個のICチップの相互接続構造
を改良して、大型化を図った新しい表示あるいは撮像装
置に関する。
Detailed Description of the Invention (a) Technical Field of the Invention The present invention relates to a semiconductor integrated circuit device (hereinafter referred to as a TC device), and more specifically, it relates to a semiconductor integrated circuit device (hereinafter referred to as a TC device), and more specifically, to The present invention relates to a new display or imaging device that is larger in size by improving the interconnection structure of a plurality of IC chips in which drive circuits are integrally integrated.

(bl  技術の背景 近年、半導体基板表面に表示素子あるいは受光素子なら
びにそれら素子に対する駆動回路を一体的に集積した構
成の固体表示装置や固体撮像装置が研究開発されている
Background of the Technology In recent years, solid-state display devices and solid-state imaging devices have been researched and developed in which display elements or light-receiving elements and drive circuits for these elements are integrally integrated on the surface of a semiconductor substrate.

このような駆動回路は例えばシリコン基板上にマトリッ
クス状に配役した表示素子或いは受光素子と一体的に集
積化される。ところが、このような構成では表示素子或
いは受光素子と駆動回路とを集積化するシリコン基板の
大きさによって1表示画面や撮像画面のスケールが制限
されその大型化が極めて困難である。又単一基板表面に
多数の駆動回路を集積化しようとすると、電極の短絡や
切断等の欠陥が起りやすく製造歩留りが著しく低下する
Such a drive circuit is integrated, for example, with display elements or light receiving elements arranged in a matrix on a silicon substrate. However, in such a configuration, the scale of one display screen or imaging screen is limited by the size of the silicon substrate on which the display element or the light receiving element and the drive circuit are integrated, and it is extremely difficult to increase the size of the screen. Furthermore, if a large number of drive circuits are integrated on the surface of a single substrate, defects such as electrode short-circuiting or disconnection are likely to occur, resulting in a significant reduction in manufacturing yield.

そこで上記の不利を解消すべく特願昭55−2・584
4号(特開昭56−122089号)等により1例えば
20X20ドツトのごとき小単位の画素を有するrcチ
ンプを所要数組合せて2表示あるいは撮像画面の大型化
を図るという考え方が提案されている。
Therefore, in order to eliminate the above-mentioned disadvantages, patent application No. 55-2/584
No. 4 (Japanese Unexamined Patent Publication No. 56-122089) and others proposes the concept of combining a required number of RC chimps each having a small unit of pixels, such as 20×20 dots, to increase the size of the two display or imaging screen.

この様な構成法をとる場合、多数のICチップを相互に
接続する必要がある。
When adopting such a configuration method, it is necessary to interconnect a large number of IC chips.

(C)従来の技術と問題点 一般にICチップ間の接続は該チップ上面にパッドを設
け、ワイアボンディング或いはフェイスダウンボンディ
ング法等で行われていた。この際に、接続用パッドは表
示あるいは受光素子の配列を定める画素電極のマトリッ
クス領域の周辺に設けられているのが従来の例である。
(C) Prior Art and Problems In general, connections between IC chips are made by providing pads on the top surface of the chips and using wire bonding, face-down bonding, or the like. In this case, the conventional example is that the connection pads are provided around the matrix region of the pixel electrode that defines the arrangement of display or light-receiving elements.

然るにグラフインクディスプレーや撮像装置の場合は、
上記のようなICチップを複数個組合せた際、隣接する
チップ間においても画素電極の配列ピッチは同一でなけ
ればならない。これを個々のICチップについて見れば
、第1図に示すように基板1の上に画素電極がピッチp
で配列されている場合、その最も周辺部に配列されてい
る画素電極2aと基板lの端縁1aの間隔qは1/2p
以下とする条件を満たさねばならない。
However, in the case of graph ink displays and imaging devices,
When a plurality of IC chips as described above are combined, the arrangement pitch of pixel electrodes must be the same even between adjacent chips. If we look at this for each IC chip, as shown in FIG.
, the distance q between the pixel electrode 2a arranged in the most peripheral part and the edge 1a of the substrate l is 1/2p.
The following conditions must be met.

ところが、前記チップ間接続用のパッドの大きさは、ワ
イアボンディング用でも約80〜100ミクロン、フェ
イスダウ・・ンボンデイング用でも約50ミクロンあり
、前記の画素電極のピッチpが小さくなってくると、前
記の条件を満たすことは甚だ困難となってくる。
However, the size of the pad for inter-chip connection is approximately 80 to 100 microns for wire bonding, and approximately 50 microns for face-down bonding, and as the pitch p of the pixel electrodes becomes smaller, , it becomes extremely difficult to satisfy the above conditions.

+d)  発明の目的 本発明は前述の点に鑑みなされたもので、前記の様なI
Cチップを相互接続する際、チップ間接続部においても
チップ内と同一の画素電極配列ピッチを確保できる接続
用パッドの新しい配役構造を提供し、以て大型で高品質
の表示または撮像機能を達成しようとするものである。
+d) Purpose of the Invention The present invention has been made in view of the above-mentioned points.
When interconnecting C-chips, we provide a new connection pad structure that ensures the same pixel electrode array pitch at the chip-to-chip connection section as within the chip, thereby achieving large-scale, high-quality display or imaging functions. This is what I am trying to do.

te+  発明の構成 上記の本発明の目的は、共通の基板上に規則的に配列さ
れた複数個の画素電極を有し、且つ該画素電極に対す駆
動回路を一体的に集積化してなる構成において、前記基
板の側面部に前記駆動回路に対する接続用電極を配設す
ることにより容易に達成される。
te+ Structure of the Invention The object of the present invention described above is to provide a structure having a plurality of pixel electrodes regularly arranged on a common substrate and integrally integrating a driving circuit for the pixel electrodes. This can be easily achieved by providing connection electrodes for the drive circuit on the side surface of the substrate.

(fl  発明の実施例 以下本発明の実施例につき図面を参照して説明する。第
2図は本発明に基づく前記ICチップの一実施例を概念
的に示す斜視図である。
Embodiments of the Invention Examples of the present invention will now be described with reference to the drawings. FIG. 2 is a perspective view conceptually showing an embodiment of the IC chip according to the present invention.

画素電極2を選択駆動するために集積化した図示しない
駆動回路ならびにアドレス回路の外部接続用電極のパッ
ド3aは半導体基板1の端面1aに配設されている。
A drive circuit (not shown) integrated to selectively drive the pixel electrode 2 and pads 3a of external connection electrodes of an address circuit are provided on the end surface 1a of the semiconductor substrate 1.

次に第3図の該ICチップの一部の断面図により、上記
パッド3aの形成方法を簡単に述べる。
Next, a method for forming the pad 3a will be briefly described with reference to a cross-sectional view of a portion of the IC chip shown in FIG.

基板の端面1aのパッド3aの形成部と前記駆動回路4
の能動素子の入出力電極5以外の部分をホトレジス)I
IIで覆って、蒸着槽内で矢印で示す方向より、アルミ
ニュウムを蒸着し1次いで該ホトレジスト膜を除去する
と1図に示すようなパ・ノド3aが形成される。尚、第
3図では発光層は省略しである。
The formation portion of the pad 3a on the end surface 1a of the substrate and the drive circuit 4
The parts other than the input/output electrodes 5 of the active element of
When the photoresist film is covered with II and aluminum is evaporated in the direction shown by the arrow in the evaporation tank, and then the photoresist film is removed, a paten 3a as shown in FIG. 1 is formed. Note that the light emitting layer is omitted in FIG. 3.

基板lの上面には1画素電極のみ存在しチ・ノブ間の接
続用電極3は存在しないゃで、該チップの基板lの上面
は発光領域のみで占められており。
Only one pixel electrode exists on the upper surface of the substrate 1, and no electrode 3 for connection between the chip and the knob exists, so that the upper surface of the substrate 1 of the chip is occupied only by the light emitting region.

且つ、第1図に示す最外列の画素電極群2aと基板端面
1aとの距離qは画素電極のピッチpのA以下にするこ
とができる。
In addition, the distance q between the outermost row of pixel electrode groups 2a shown in FIG. 1 and the substrate end surface 1a can be made equal to or less than A of the pitch p of the pixel electrodes.

従って、此の発明に基づ<Icチップは互いにその基板
lの端面1aに配設された接続電極3を。
Therefore, based on this invention, the Ic chips each have connecting electrodes 3 disposed on the end surface 1a of the substrate 1.

超短波溶接などの方法で互いに接続することにより所定
の大きさのグラフィック表示用の大画面を得ることが可
能である。
By connecting them together using a method such as ultrashort wave welding, it is possible to obtain a large screen for displaying graphics of a predetermined size.

第4図は本発明に基づ<ICチップ4個を組み合せた例
を概念的に示す斜視図である。
FIG. 4 is a perspective view conceptually showing an example in which four IC chips are combined based on the present invention.

(10発明の効果 以上の説明から明らかなように2本発明によるIC装置
は、半導体基板表面に表示素子或いは受光素子ならびに
それ等の駆動回路を一体的に集積化した複数個のICチ
ップを、そのWaS電極の配列ピッチを総て同一に保ち
ながら、該チップの端面に配設した接続電極により互い
に接続できるので、容易に大面積のグラフィック表示装
置または撮像装置を得ることができる。
(10 Effects of the Invention As is clear from the above description, the IC device according to the present invention includes a plurality of IC chips in which display elements or light receiving elements and their driving circuits are integrally integrated on the surface of a semiconductor substrate. Since the WaS electrodes can be connected to each other by connection electrodes disposed on the end face of the chip while keeping the arrangement pitch the same, a large-area graphic display device or imaging device can be easily obtained.

更に本発明に基づ<ICチップの基板上面は全面発光領
域であり、チップ相互間を接続する配線は全く不要であ
るので全体の画面の構成も極めて簡単でかつ美しい画面
が得られる効果がある。
Furthermore, based on the present invention, the entire top surface of the IC chip substrate is a light-emitting area, and there is no need for any wiring to connect the chips, so the overall screen configuration is extremely simple and a beautiful screen can be obtained. .

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来のICチップの電極配置を概念的に示す平
面図、第2図は本発明に基づ<ICチップの斜視図、第
3図は同じく接続電極付近を概念的に示す断面図、第4
図は本発明によるICチソップ4個を組み合せた大画面
の構成法を概念的に示す斜視図である。 1はICチップ基板、laは該ICチップ基板1の端面
、2は画素電極、2aは最外列の画素電極、3は接続用
電極パッド、4は駆動回路部、5はICチップ入出力電
極をそれぞれ示す。
Fig. 1 is a plan view conceptually showing the electrode arrangement of a conventional IC chip, Fig. 2 is a perspective view of an IC chip based on the present invention, and Fig. 3 is a sectional view conceptually showing the vicinity of the connection electrodes. , 4th
The figure is a perspective view conceptually showing a method of constructing a large screen by combining four IC chisops according to the present invention. 1 is an IC chip board, la is an end surface of the IC chip board 1, 2 is a pixel electrode, 2a is a pixel electrode in the outermost row, 3 is a connection electrode pad, 4 is a drive circuit section, and 5 is an IC chip input/output electrode. are shown respectively.

Claims (1)

【特許請求の範囲】[Claims] 共通の基板上に規則的に配列された複数個の画素電極を
有し、且つ該画素電極に対す駆動回路を一体的に集積化
してなる構成において、前記基板の端面部に前記駆動回
路に対する接続用電極を配設してなることを特徴とする
半導体集積回路装置。
In a configuration in which a plurality of pixel electrodes are regularly arranged on a common substrate and a driving circuit for the pixel electrodes is integrally integrated, a connection to the driving circuit is provided on an end surface of the substrate. 1. A semiconductor integrated circuit device, characterized in that a semiconductor integrated circuit device is provided with an electrode.
JP57081133A 1982-05-13 1982-05-13 Semiconductor integrated circuit device Pending JPS58197769A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57081133A JPS58197769A (en) 1982-05-13 1982-05-13 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57081133A JPS58197769A (en) 1982-05-13 1982-05-13 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS58197769A true JPS58197769A (en) 1983-11-17

Family

ID=13737895

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57081133A Pending JPS58197769A (en) 1982-05-13 1982-05-13 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS58197769A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0488289U (en) * 1990-12-19 1992-07-31
US5313097A (en) * 1992-11-16 1994-05-17 International Business Machines, Corp. High density memory module
EP1173007A3 (en) * 2000-07-10 2003-01-02 Canon Kabushiki Kaisha Image pickup apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0488289U (en) * 1990-12-19 1992-07-31
US5313097A (en) * 1992-11-16 1994-05-17 International Business Machines, Corp. High density memory module
EP1173007A3 (en) * 2000-07-10 2003-01-02 Canon Kabushiki Kaisha Image pickup apparatus

Similar Documents

Publication Publication Date Title
JP3556315B2 (en) Display device and semiconductor element
TWI823332B (en) Spliced micro light emitting diode display panel
JP3643640B2 (en) Display device and IC chip used therefor
US5060027A (en) Light emitting diode array with aligned solder bumps
WO2021244251A1 (en) Display substrate and display device
JP2007058174A (en) Array substrate and display apparatus having the same
KR101902042B1 (en) Solid-state image pickup element and solid-state image pickup element mounting structure
EP4033529A1 (en) Light emitting diode packaging assembly
JPS58197769A (en) Semiconductor integrated circuit device
JP2001142090A (en) Liquid crystal display device
JP2022536436A (en) light emitting diode package assembly
KR100824533B1 (en) Display driver ic
JP2008309825A (en) Liquid crystal display
CN113345879B (en) Miniature LED display panel
JP3199570B2 (en) Display device
JP7307798B2 (en) Light-emitting package assemblies, light-emitting modules and display panels
JPH10154727A (en) Slender driver ic and flay display device using this
JPH0414507B2 (en)
KR100637058B1 (en) Liquid Crystal Display
JPS59116779A (en) Flat display
WO2023060516A1 (en) Light-emitting diode packaging structure, display panel, and tiled display apparatus
CN115985895A (en) Light emitting diode packaging structure, display panel and splicing type display device
TWI783875B (en) Display panel
WO2023119815A1 (en) Cover glass and display device
WO2024036636A1 (en) Substrate and electronic apparatus