JPS58197746A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS58197746A
JPS58197746A JP7985682A JP7985682A JPS58197746A JP S58197746 A JPS58197746 A JP S58197746A JP 7985682 A JP7985682 A JP 7985682A JP 7985682 A JP7985682 A JP 7985682A JP S58197746 A JPS58197746 A JP S58197746A
Authority
JP
Japan
Prior art keywords
input
output
terminal
macros
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7985682A
Other languages
Japanese (ja)
Other versions
JPH058576B2 (en
Inventor
Masahiro Iwamura
将弘 岩村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7985682A priority Critical patent/JPS58197746A/en
Publication of JPS58197746A publication Critical patent/JPS58197746A/en
Publication of JPH058576B2 publication Critical patent/JPH058576B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118Masterslice integrated circuits
    • H01L27/11898Input and output buffer/driver structures

Abstract

PURPOSE:To obtain the IC applyable not only to input/output of a logic level, but also applyable to input/output of a non-logic level at the device having macros of the plural pieces provided on a semiconductor chip, input/output pads of the plural pieces provided around the chip, and a middle cell to connect between them by a method wherein a through channel of at least one piece is provided to the middle cell. CONSTITUTION:At the master slice system IC, common element patterns given the name of the macros are formed to be arranged in the matrix type on one semiconductor chip previously, and mutual wirings between the macros are performed complying the developed kind. Therefore the through channel 210 according to a metal wiring, a terminal 211 to connect between an inside circuit consisting of the macros, and a terminal 212 to connect between an input/output pad connecting terminal 108 are provided to the input/output cell 100. Moreover an inside earthing bus 220 to apply the reference electric potential to the inside circuit, an earth lead-out wire 230, a terminal 231 to connect the lead-out wire 230 to the terminal 108, and an electric power source bus 240, etc., are provided.

Description

【発明の詳細な説明】 本発明は半導体集積回路装置に係り、特にマスタースラ
イス方式の半導体集積回路装置に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor integrated circuit device, and particularly to a master slice type semiconductor integrated circuit device.

コンピュータ、端末装置、その他の一般制御装置の大規
模集積回路(LaI3化が活発に展開されている。これ
らの半導体集積回路装置は多品種少量生産の傾向が特に
強く、製造コストの低減と製造期間の短縮化の丸めマス
タースライス(master 5lice 3方式によ
る製造が多用されている。
Large-scale integrated circuits (LaI3) for computers, terminal devices, and other general control devices are being actively developed.These semiconductor integrated circuit devices have a particularly strong tendency to be produced in high-mix, low-volume production, which reduces manufacturing costs and shortens the manufacturing period. Manufacturing by the rounding master slice (master 5 slice 3 method) is often used.

マスタースライス方式の半導体集積回路装置においては
一つの半導体チップ上にマクロスと呼ばれる共通素子パ
ターンをあらかじめ例えばマトリクス状に作成、配置し
ておき、開発品種に応じて専用配縁マスクを作成するこ
とにより、上記マクロス間の相互配線を行って所望の回
路機能を有する半導体集積回路装置を完成させるもので
ある。
In a master slice type semiconductor integrated circuit device, a common element pattern called a macros is created and arranged in advance in a matrix shape on one semiconductor chip, and a dedicated wiring mask is created depending on the product to be developed. A semiconductor integrated circuit device having a desired circuit function is completed by interconnecting the macrocrosses.

第1図はマスタースライス方式半導体集積回路装置の構
成を簡略化して示したものである。
FIG. 1 shows a simplified configuration of a master slice type semiconductor integrated circuit device.

図において、10は半導体チップで、その周辺に入出力
ビンとの接続のための入出力パッド11が複数個配置さ
れ、さらに、入出力パッド11の内側に中間セルである
入出力セル12が配置されている。13はマクロスで、
半導体チップ10の中央にマトリクス状に配置されてい
る。マクロス13は例えば論理ゲートセルを0MO8で
構成する場合、複数のNMO8)ツンジスタとPMOS
トランジスタがあらかじめ配設されており、マスタース
ライスの工程で、トランジスタ相互間の接続が行われ、
NANDゲートやフリップフロップなどが実現される。
In the figure, 10 is a semiconductor chip, around which a plurality of input/output pads 11 for connection with input/output bins are arranged, and further, inside the input/output pads 11, an input/output cell 12 which is an intermediate cell is arranged. has been done. 13 is Macross,
They are arranged in a matrix at the center of the semiconductor chip 10. For example, when the logic gate cell is configured with 0MO8, the macros 13 includes multiple NMO8) Tunisters and PMOS.
Transistors are placed in advance, and connections between transistors are made in the master slicing process.
NAND gates, flip-flops, etc. will be realized.

14はあらかじめ定められ九配線用のチャネルで、マク
ロス13の相互間および、マクロス13と入出力セル1
2との間に設けられてお9、この配縁チャネル14を使
ってマクロス13間の相互配線およびマクロス13と入
出力セル12間の相互配−が行われ、これによシ所望の
半導体集積回路が完成される。
Reference numeral 14 denotes a predetermined channel for nine wirings between the macros 13 and between the macros 13 and the input/output cell 1.
The wiring channel 14 is provided between the macros 13 and the input/output cells 12, and interconnection between the macros 13 and the input/output cells 12 is performed using the interconnection channel 14, thereby achieving the desired semiconductor integration. The circuit is completed.

ここで、中間セルとなる入出力セル12の機能を簡単に
説明する。入力セルは半導体集積回路の外部から半導体
集積回路の内部、すなわちマクロスに信号を導入するた
めのインタフェース回路でTo〉、レベル変換の動作を
行う0列えば、半導体集積回路の外部からの信号がTT
L回路から出力され友ものでToシ、半導体集積回路の
内部が0M08回路で構成されている場合、TTL信号
レベルからCMO8信号レベルへのレベル変換を行う。
Here, the function of the input/output cell 12 serving as an intermediate cell will be briefly explained. The input cell is an interface circuit for introducing signals from the outside of the semiconductor integrated circuit into the inside of the semiconductor integrated circuit, that is, the macrocross.
If the inside of the semiconductor integrated circuit is composed of 0M08 circuits, the signal level is converted from the TTL signal level to the CMO8 signal level.

次に出力セルは半導体集積回路の内部から半導体集積回
路の外部へ信号を導出する丸めのインタフェース回路で
あシ、ガえば、半導体集積回路内部のCMO8信号レベ
ルから半導体集積回路外部0TTL(l−8レベルへの
レベル変換を行う、まえ、出力セルは外部負荷を直接駆
動する丸め、内部のマクロス13に比べて、よp高い負
荷駆動能力を持たせるのが一般的である。
Next, the output cell is a rounded interface circuit that derives a signal from the inside of the semiconductor integrated circuit to the outside of the semiconductor integrated circuit.For example, from the CMO8 signal level inside the semiconductor integrated circuit to the 0TTL (l-8 Before performing level conversion, the output cell directly drives an external load, and generally has a much higher load driving capability than the internal macrocross 13.

第2図は従来から多用されているマスタースライス用の
中間セルとなる入出力セルの拡大図である。
FIG. 2 is an enlarged view of an input/output cell serving as an intermediate cell for a master slice, which has been frequently used in the past.

第2図において100は入出力セル全体を示し、200
は半導体集積回路の外部ピンと半導体集積回路の内部を
接続するための入出力パッドである。
In FIG. 2, 100 indicates the entire input/output cell, and 200
is an input/output pad for connecting an external pin of the semiconductor integrated circuit to the inside of the semiconductor integrated circuit.

101は入力バッファ、102は出力バッファである。101 is an input buffer, and 102 is an output buffer.

入出力セル10Gを入力用として使用する場合、端子、
103と端子108が接続され、外部備考が入出力パッ
ド200、入力バッファ101゜端子104を通って内
部のマクロスに導入される。
When using the input/output cell 10G for input, the terminal,
103 and terminal 108 are connected, and external notes are introduced into the internal macros through input/output pad 200, input buffer 101° terminal 104.

次に入出力セル100を出力用として使用する場合、端
子106と端子108が接続され、内部回路の出力が端
子105、出力バッファ102、入出力パッド200を
通って半導体集積回路の外部に出力される。なお、端子
107Fi出力パツフア108をトライステート(高イ
ンピーダンス)状態に切換える丸めの制御端子である。
Next, when the input/output cell 100 is used for output, the terminal 106 and the terminal 108 are connected, and the output of the internal circuit is outputted to the outside of the semiconductor integrated circuit through the terminal 105, the output buffer 102, and the input/output pad 200. Ru. Note that the terminal 107Fi is a rounded control terminal that switches the output buffer 108 to a tristate (high impedance) state.

1九、入出力セル100を入力と出力に兼用する場合は
端子103と端子108が接続されるとともに端子10
6と端子108が接続される。
19. When the input/output cell 100 is used for both input and output, the terminal 103 and the terminal 108 are connected, and the terminal 10
6 and terminal 108 are connected.

この様な従来の中間セルは論理レベルの信号の入力ま九
は出力を目的としているため、非論理レベルのアナログ
信号の入力f出力は不可能である。
Since such a conventional intermediate cell is intended to input or output a logic level signal, it is impossible to input or output a non-logic level analog signal.

また、従来の中間セルは信号の入力と出力の機能しかな
い丸め、入出力ビンを不使用の場合、入出力ビンを有効
に利用することができない。
In addition, conventional intermediate cells only have the function of inputting and outputting signals, and if the input/output bins are not used, the input/output bins cannot be used effectively.

本発明の目的は論理レベル信号の入出力ばかりでなく、
非論理レベルの入出力にも通用し得る中間(ルを備え良
導導体集積回路装置を提供することにある。
The purpose of the present invention is not only to input and output logic level signals, but also to
An object of the present invention is to provide a highly conductive integrated circuit device equipped with an intermediate circuit that can also be used for non-logic level input/output.

本発明の他の目的は不使用の入出力ビンを有効に使用し
得る中間セルを備え良導導体集積回路装置を提供するこ
とにある。
Another object of the present invention is to provide a highly conductive integrated circuit device equipped with intermediate cells that can effectively use unused input/output bins.

本発明は前述し九ような従来の中間セルの欠点を除去す
る丸めになされ丸ものであシ、中間セルを汎用化する丸
めに中間セルに非論理レベルの入出力を行う丸めのスル
ーチャネルを^偏することを41黴としている。
The present invention is a rounded circuit that eliminates the disadvantages of the conventional intermediate cell as described above, and a through channel for rounding that performs non-logic level input/output to the intermediate cell. ^ It is said that being biased is 41 molds.

さらに本発明の他の%黴とするところは、不使用ビンを
付加的な接地ビンとするための接地引出線と不使用ビン
を付加的な電源ビンとするための電源引出線を中間セル
に設けることにより、不使用ビンを有効に利用できるよ
うにし友ものである。
Furthermore, another feature of the present invention is that a ground lead-out line for turning an unused bin into an additional ground bin and a power lead-out line for turning an unused bin into an additional power supply bin are connected to the intermediate cell. By providing this, it is possible to make effective use of unused bottles.

以下、本発明を図面に従って説明する。以下の図面で第
2図と同一番号は同一物を九は相当物を示す。
The present invention will be explained below with reference to the drawings. In the following drawings, the same numbers as in Figure 2 indicate the same parts, and 9 indicates equivalent parts.

第3図において、210は例えば金属配線によるスルー
チャネルで、211はマクロスからなる内部回路と接続
する丸めの接続端子、212は入出力パッド接続端子1
08と接続する丸めの接続端子である。220は金属配
縁によりマクロスからなる内部回路に基準電位を与える
内部接地パス、230は金属配線による接地引出線、2
31は接地引出@230を端子108に接続するための
接続端子である。240は金属配線によシマクロスから
なる内部回路に電源電位を供給する電源バス、250は
金属配線による電源引出線、251は電源引出−を端子
108に接続する九めの接続端子である。第3図に示し
九本実施例の中間セルとなる入出力セル100では従来
の論理レベルの入出力機能に加えて、端子212と端子
108を接続することにより、非論理レベルの入出力を
行うことができる。
In FIG. 3, 210 is a through channel made of, for example, metal wiring, 211 is a round connection terminal that connects to the internal circuit consisting of a macro, and 212 is an input/output pad connection terminal 1.
This is a round connection terminal that connects to 08. 220 is an internal grounding path that provides a reference potential to the internal circuit made up of the macros through metal wiring; 230 is a grounding lead line that is made of metal wiring; 2
31 is a connection terminal for connecting the grounding drawer @230 to the terminal 108. Reference numeral 240 indicates a power supply bus for supplying a power supply potential to the internal circuit made of Shimacross through metal wiring, 250 indicates a power supply line formed by metal wiring, and 251 indicates a ninth connection terminal for connecting the power supply line to the terminal 108. The nine input/output cells 100 shown in FIG. 3, which are the intermediate cells of this embodiment, perform non-logic level input/output by connecting the terminals 212 and 108 in addition to conventional logic level input/output functions. be able to.

ま九、端子231と端子108を接続することによシ、
信号の入出力に使用されない不使用ビンを付加的な接地
ビンとして使用することができる。
By connecting terminal 231 and terminal 108,
Unused bins not used for signal input/output can be used as additional ground bins.

さらにまた、端子251と端子108を接続することK
より信号の入出力に使用されない不使用ビンを付加的な
電源ビンとして使用することができる。
Furthermore, connecting the terminal 251 and the terminal 108
An unused bin that is not used for signal input/output can be used as an additional power supply bin.

陶、中間セルとなる入出力セル100に上記のいずれの
機能を持死せるかは品楕毎に配線マスクを作成すb際に
、同時に入出力セル用の配線マスクを作成することによ
)自由に決定できる。
Which of the above functions can be achieved in the input/output cell 100, which is an intermediate cell, is determined by creating a wiring mask for the input/output cell at the same time as creating a wiring mask for each product. You can decide freely.

第4図に本実施例をアナログ入力セルとして用いる場合
の配線例を示す。
FIG. 4 shows an example of wiring when this embodiment is used as an analog input cell.

図において、300はマクロスで構成される内部回路部
分を示している。31Oはアナログコンパレータで、3
11,312はその入力端子、313は出力端子である
0図において、スルーチャネル210の一方の端子21
2は入出力パッドの端子108と接続されており、他方
の端子211はアナログコンパレータ310の一方の入
力端子311に接続される。し九がって、本実施例では
入出力セル100はアナログ入力セルとして機能し、ア
ナログコンパレータ310の出力端子313には入力端
子311に印加されたアナログ信号と入力端子312に
印加され九他のアナログ信号との比較結果が出力される
In the figure, 300 indicates an internal circuit portion composed of macros. 31O is an analog comparator, 3
11 and 312 are its input terminals, and 313 is its output terminal. In the figure, one terminal 21 of the through channel 210
2 is connected to the terminal 108 of the input/output pad, and the other terminal 211 is connected to one input terminal 311 of the analog comparator 310. Therefore, in this embodiment, the input/output cell 100 functions as an analog input cell, and the output terminal 313 of the analog comparator 310 receives the analog signal applied to the input terminal 311 and the analog signal applied to the input terminal 312. The comparison result with the analog signal is output.

第5図に本実施例をアナログ出力セルとして用いる場合
の配線例を示す。
FIG. 5 shows an example of wiring when this embodiment is used as an analog output cell.

第5図において、32(l演算増幅器であシ、321.
322は夫々入力抵抗、帰還抵抗、また、3231.3
24は夫々演算増幅器の入力端子、出力端子である。第
5図において、入力端子323に印加され九アナログ信
号■3は増幅され、出力端子324に出力される。演算
増幅器320の出力端子324は端子211、スルーチ
ャネル210端子212、端子108を経て入出力パッ
ド200に接続されている。し九がって、JIK5図で
は入出力セル10Gはアナログ出力セルとして機能する
In FIG. 5, 32 (l operational amplifiers), 321 .
322 is an input resistor, a feedback resistor, and 3231.3
24 are an input terminal and an output terminal of the operational amplifier, respectively. In FIG. 5, the nine analog signal 3 applied to the input terminal 323 is amplified and outputted to the output terminal 324. The output terminal 324 of the operational amplifier 320 is connected to the input/output pad 200 via the terminal 211, the through channel 210 terminal 212, and the terminal 108. Therefore, in the JIK5 diagram, the input/output cell 10G functions as an analog output cell.

なお、本実施例の構成!!索の一つであるスルーチャネ
ル210は端子211と212を結ぶ単なる配線であっ
てもよいし、第6図に示すように、端子211と212
間に設けられ九抵抗、ダイオード、トランジスタなどか
ら構成された直列回路あるいは並列回路215を含むも
のであっても入力筐丸は、出力としてのスルー機能を損
わないものであればよい。
In addition, the configuration of this example! ! The through channel 210, which is one of the cables, may be a simple wire connecting the terminals 211 and 212, or as shown in FIG.
Even if it includes a series circuit or a parallel circuit 215 formed of resistors, diodes, transistors, etc. provided between the input enclosures, it is sufficient that the input enclosure does not impair the through function as an output.

JIII図に本実施例を接地強化セルとして用いる場合
の配線例を示す。
Figure JIII shows an example of wiring when this embodiment is used as a grounding reinforcement cell.

第7FIAにおいて、内部接地バス220は接地引出線
2301端子2311端子108を経て人出カパツド2
00に接続されている。したがって、jIT図では入出
力セル100は接地強化セルとして機能する。
In the 7th FIA, the internal ground bus 220 is connected to the ground conductor 2301 via the terminal 2311 and the terminal 108.
Connected to 00. Therefore, in the jIT diagram, the input/output cell 100 functions as a ground reinforcement cell.

第8図に本実施例を電源強化セルとして用いる場合の配
−例を示す。
FIG. 8 shows an example of the arrangement when this embodiment is used as a power supply reinforcement cell.

第8図において内部電源バス240は電源引出線250
、端子2511端子108を経て入出力バッド200に
接続されている。したがって、第8図では入出力セル1
00は電源強化セルとして機能する。
In FIG. 8, the internal power bus 240 is connected to the power supply line 250.
, terminal 2511 is connected to the input/output pad 200 via the terminal 108. Therefore, in Fig. 8, input/output cell 1
00 functions as a power enhancement cell.

なお、本発明の実施例ではスルーチャネルが1本の場合
を示したが、必l!に応じて入力専用のスルーチャネル
、出力専用のスルーチャネルに分けるなど、置数のスル
ーチャネルを設けてもよい。
Note that although the embodiment of the present invention shows the case where there is one through channel, this is not always the case! A fixed number of through channels may be provided, such as dividing into an input-only through channel and an output-only through channel depending on the situation.

を九、接地引出線、電源引出線についても、2系統以上
の内部接地バス、電源バスがある場合、複数の接地引出
線、電源引出線を設けてもよい。ま九、スルーチャネル
210、接地引出線230、電源引出9250#iその
長さが零であってもよい。
(9) Regarding the ground lead wire and power lead wire, if there are two or more systems of internal ground buses and power busses, multiple ground lead wires and power lead wires may be provided. Furthermore, the lengths of the through channel 210, the grounding lead wire 230, and the power supply lead 9250#i may be zero.

すなわち、接続端子211と212は同一端子であって
もよいし、接続端子231は内部接地バス22G上の任
意の点に設けられていてもよい。同様に績l&趨子25
1は内部電源バス240上の任意の点に設けられていて
もよい。
That is, the connection terminals 211 and 212 may be the same terminal, or the connection terminal 231 may be provided at any point on the internal ground bus 22G. Similarly, achievement l&reiko 25
1 may be provided at any point on the internal power supply bus 240.

さらKt丸、本発明による中間セルではスルーチャネル
、接地引出線、゛電源引出線のすべてを設ける必要はな
く、必要なものだけ設けておけばよい。
Furthermore, in the intermediate cell according to the present invention, it is not necessary to provide all of the through channels, ground lead wires, and power lead wires, and only the necessary ones may be provided.

以上の説明で明らかなように、本発明によれば論理レベ
ルの信号の入出力ばかpでなく、非論理レベルの信号の
入出力にも適用できる九め、とくにディジタルとアナロ
グが混在したマスタースライス方式の半導体集積回路装
置の場合、その効果が大である。
As is clear from the above explanation, according to the present invention, the invention can be applied not only to the input/output of logic level signals, but also to the input/output of non-logic level signals. In the case of a semiconductor integrated circuit device based on this method, the effect is significant.

さらに、本発明によれば、中間セルは信号の入出力K1
1l用しない外部ビンを接地強化ビンtfcはf/を源
強化ピンとして利用できるため、内部回路の接地レベル
↑′−源レベルの変動を低減でき、よシ安定し九回路動
作の半導体集積回路装置を得ることができる。
Furthermore, according to the invention, the intermediate cell has a signal input/output K1
Since the external pin that is not used for 1l can be used as a ground reinforcement pin for TFC, f/ can be used as a source reinforcement pin, so fluctuations in the ground level ↑'-source level of the internal circuit can be reduced, resulting in a more stable semiconductor integrated circuit device with 9-circuit operation. can be obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

第1FiAはマスタースライス方式半導体集積回路の概
略を示す平面図、Ji12図は縞1図に於ける従来例で
ある入出力セルの回路図、第3図は本発明の一実施例に
よる入出力セルの回路図、第4図は本発明の一実施例に
よる入出力セルをアナログ入力セルとして用いる場合の
回路図、第5図は本発明の一実施例による入出力セルを
アナログ出力セルとして用いる場合の回路図、第6図は
本発明の他の実施例によるスルーチャネルを示す図、第
7図は本発明の一実施例による入出力セルを接地強化セ
ルとして用いる場合の回路図、第8図は本発明の一実施
例による入出力セルを電源強化セルとして用いる場合の
回路図である。 11.200・・・入出力パッド、12,100・・・
入出力セル、13・・・マクロス、210・・・スルー
チャネル、220・・・内部接地バス、230・・・接
地引出線、240・・・電源バス、250・・・電源引
出線、 。 代理人 弁理士 高41!明( 第1 m ′JP;4L  図
1 FiA is a plan view schematically showing a master slice type semiconductor integrated circuit, Figure 12 is a circuit diagram of a conventional input/output cell in Stripe 1, and Figure 3 is an input/output cell according to an embodiment of the present invention. 4 is a circuit diagram when an input/output cell according to an embodiment of the present invention is used as an analog input cell, and FIG. 5 is a circuit diagram when an input/output cell according to an embodiment of the present invention is used as an analog output cell. 6 is a diagram showing a through channel according to another embodiment of the present invention, FIG. 7 is a circuit diagram when an input/output cell according to an embodiment of the present invention is used as a grounding reinforcement cell, and FIG. 8 is a diagram showing a through channel according to another embodiment of the present invention. 1 is a circuit diagram when an input/output cell according to an embodiment of the present invention is used as a power supply reinforcement cell. 11.200...I/O pad, 12,100...
Input/output cell, 13...Macross, 210...Through channel, 220...Internal ground bus, 230...Ground lead wire, 240...Power supply bus, 250...Power lead wire. Agent Patent Attorney 41st year of high school! Bright (1st m'JP; 4L figure

Claims (1)

【特許請求の範囲】 1、半導体チップ上に設けられる複数個のマクロスと、
線中導体チップの周辺に設けられる複数個の入出力パッ
ドと、該マクロスと該入出カッくラドの閾に設けられ、
該マクロスと咳入出カッくラドとt接続する中間セルと
を具備するものに於いて、上記中間セルは少なくとも一
つのスルーチャネルを有することを特徴とする半導体集
積回路。 2.4II#’Pfl求の範囲第1項に於いて、上記ス
ルーチャネルは、上記マクロスと上4入出カッくラドと
を直接接続する金属配線であることを特徴とする半導体
集積回路。 3、半導体チップ上に設けられる複数個のマクロスと、
該半導体チップの周辺に設けられる複数個の入出力パッ
ドと、該マクロスと該入出カッくラドの間に設けられ、
該マクロスと該入出力パッドとを接続する中間セルとを
具備するものに於いて、上記中間セルは、上記マクロス
に基準電位を与える内S接地パスに接続する接地引出線
、ま九は、上記マクロスに電源電位を与える電源パスに
接続する電源引出線を有することを特徴とする半導体集
積回路。 4、%許請求の範囲第1項、第2項または第3項に於い
て、上記中間セルは入カパツファまたは出力バッファを
有することを%黴とする半導体集積回路装置。
[Claims] 1. A plurality of macros provided on a semiconductor chip;
A plurality of input/output pads provided around the line conductor chip, and provided at the thresholds of the macros and the input/output pads,
1. A semiconductor integrated circuit comprising an intermediate cell T-connected to the macrocross and the input/output capacitor, wherein the intermediate cell has at least one through channel. 2.4II#'Pfl The semiconductor integrated circuit according to the first term of the range, wherein the through channel is a metal wiring that directly connects the macrocross and the upper four input/output capacitors. 3. A plurality of macros provided on a semiconductor chip,
a plurality of input/output pads provided around the semiconductor chip, and provided between the macros and the input/output pads,
In the device comprising an intermediate cell connecting the macrocross and the input/output pad, the intermediate cell is a ground leader line connected to the inner S ground path that provides a reference potential to the macrocross; 1. A semiconductor integrated circuit characterized by having a power supply line connected to a power supply path that supplies a power supply potential to a macros. 4. A semiconductor integrated circuit device according to claim 1, 2 or 3, wherein the intermediate cell has an input buffer or an output buffer.
JP7985682A 1982-05-14 1982-05-14 Semiconductor integrated circuit device Granted JPS58197746A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7985682A JPS58197746A (en) 1982-05-14 1982-05-14 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7985682A JPS58197746A (en) 1982-05-14 1982-05-14 Semiconductor integrated circuit device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP20503590A Division JPH0372655A (en) 1990-08-03 1990-08-03 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS58197746A true JPS58197746A (en) 1983-11-17
JPH058576B2 JPH058576B2 (en) 1993-02-02

Family

ID=13701833

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7985682A Granted JPS58197746A (en) 1982-05-14 1982-05-14 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS58197746A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58209158A (en) * 1982-05-31 1983-12-06 Nec Corp Master-slice semiconductor device
JPS5984547A (en) * 1982-11-08 1984-05-16 Seiko Epson Corp Semiconductor device
US6735730B1 (en) 1999-11-01 2004-05-11 Semiconductor Technology Academic Research Center Integrated circuit with design for testability and method for designing the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5561054A (en) * 1978-10-30 1980-05-08 Mitsubishi Electric Corp Large scale integrated circuit
JPS561545A (en) * 1979-06-15 1981-01-09 Mitsubishi Electric Corp Input/output buffer cell for semiconductor integrated circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5561054A (en) * 1978-10-30 1980-05-08 Mitsubishi Electric Corp Large scale integrated circuit
JPS561545A (en) * 1979-06-15 1981-01-09 Mitsubishi Electric Corp Input/output buffer cell for semiconductor integrated circuit

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58209158A (en) * 1982-05-31 1983-12-06 Nec Corp Master-slice semiconductor device
JPH0141032B2 (en) * 1982-05-31 1989-09-01 Nippon Electric Co
JPS5984547A (en) * 1982-11-08 1984-05-16 Seiko Epson Corp Semiconductor device
JPH0416946B2 (en) * 1982-11-08 1992-03-25 Seiko Epson Corp
US6735730B1 (en) 1999-11-01 2004-05-11 Semiconductor Technology Academic Research Center Integrated circuit with design for testability and method for designing the same

Also Published As

Publication number Publication date
JPH058576B2 (en) 1993-02-02

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