JPS58196024A - Chemical solution processing device for substrate in processing stage of the same to be processed - Google Patents

Abstract

PURPOSE:To form a uniformly processed surface by such an arrangement wherein a nozzle is caused to make relative reciprocation in parallel to the surface of a substrate to be processed and processing is performed by causing the nozzle to spout processing chemical solution, and by this method, the entire surface to be processed can be processed under the same conditions. CONSTITUTION:A nozzle 11 is arranged with a fixed interval maintained from a stratum 10 to be processed, and as the nozzle 11 is caused to make reciprocation along a guide rail 12, processing chemical solution spouted from the nozzle 11 becomes constant at any point on the surface of the substrate 10 to be processed, therefore a uniform processing speed can be obtained at any point of the substrate to be processed, and as a result of this, the substrate 10 to be processed can be uniformly processed.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a substrate processing apparatus for chemical liquid treatment in a processing process of a substrate to be processed, such as a semiconductor substrate or a mask substrate used in the manufacture of semiconductor integrated circuits and the like.

The concept of processing steps will be explained using FIG. 1 by taking a mask substrate as an example.

In FIG. 1 (4), 1 is a glass substrate, 2 is a metal film formed on this glass substrate 1, and 3 is a resist film coated on this metal film 2 and heat-treated as necessary. .

As shown in FIG. 1(B), desired portions of the resist film 3 thus formed are irradiated with radiation such as electron beams, ultraviolet rays, or X-rays, and the irradiated portions of the resist film 3a and the unirradiated portions of the resist film 3b are be physically and chemically different from each other.

Thereafter, as shown in FIG. 1 (0), the resist film 3 is treated with a developer and a 1-rus solution using physical and chemical differences to obtain only the irradiated resist film 38 portion, and Heat treatment or plasma treatment is performed depending on the situation.

After that, as shown in FIG. 1(G), the resist film 3 is
A is used as a masking material and the metal film 2 is treated with a chemical solution (usually referred to as an etching solution) to corrode the metal film 2, thereby obtaining a desired metal film pattern 2a.

Finally, as shown in the first factor (1), the resist film 3a that is no longer needed is treated with a chemical solution and removed as necessary.

The above-mentioned processing steps are performed in exactly the same way in principle in the processing steps for semiconductor substrates.

The developing process in the process shown in FIG. 1 (step Q) is as shown in FIG.
The entire mask substrate 6 held by a jig (not shown) is placed inside and immersed in the developer 4 for a required time to process the mask substrate.

However, in this development process, the flow velocity of the developer 4 in the vicinity of the resist film surface of the mask substrate 6 in the developer 4 is slightly different between the central part and the peripheral part of the mask substrate 6 according to the shape of the mask substrate 6. ing. That is, since the developing speed is different between the central portion and the peripheral portion of the mask substrate 6, the mask substrate 6 is developed non-uniformly as a result.

This drawback is an essential drawback caused by immersing the mask substrate in a developer and cannot be avoided.

In addition, in the processing step in FIG. 1(B), as shown in FIG.
is held, and a chemical solution is injected onto the mask substrate 6 from a nozzle 9 installed above. At this time, the processing is performed while rotating the mask substrate 6 at a desired speed using the rotation device 7. In this processing step, the reason why the mask substrate 6 is rotated is to make the amount of the sprayed chemical liquid uniform on the mask substrate surface.

However, the flow rate of the chemical liquid on the surface of the mask substrate 6 is different between the center of rotation and the periphery of the mask substrate, and as a result, the cine is uniformly processed at different processing speeds.

This drawback is essentially caused by the fact that the process is performed while rotating the mask substrate.

As described above, the development process in which the resist film of the mask substrate is immersed in a developer and the process in which the metal film is treated with a chemical solution while rotating each have the above-mentioned drawbacks, and this also applies when processing semiconductor substrates. It has the same shortcomings.

The present invention aims to solve the above-mentioned drawbacks, and the present invention performs complete processing by reciprocating the nozzle and the processing surface of the substrate to be processed relative to each other in parallel, and spraying a processing chemical from the nozzle. It is characterized in that a uniform treated surface can be formed by treating the treated surface under the same conditions.

An embodiment of the present invention will be described below with reference to FIG. The drawing shows a side view, and in the drawing, 10 is a substrate to be processed, 11
is a nozzle that sprays a processing chemical, and is a nozzle or a plurality of nozzles arranged in series so that the shape of the sprayed processing chemical on the surface of the substrate 10 to be processed is linear with respect to the front direction of the drawing. The width of the spray from the nozzle is preferably wider than the width of the substrate 10 to be processed.

12 is a guide rail for guiding the movement of this nozzle 11;
3 is a drive source for reciprocating the nozzle 11 along the guide rail 12.

Note that the range in which the nozzle 11 reciprocates is the substrate 10 to be processed.
The longer the better.

The operation of the above configuration will be described below.
When the nozzle 11 is moved back and forth along the direction, the processing chemical liquid injected from the nozzle 11 is sprayed onto the surface of the substrate 10 to be processed, but at this time, the flow rate of the processing chemical liquid is constant at any point on the surface of the substrate 10 Therefore, the uniform processing speed k can be obtained at any point on the substrate to be processed, and as a result, the substrate to be processed 10 can be processed uniformly.

A specific example of the above embodiment is shown below. Using a processing chemical (etching liquid) containing ceric ammonium nitrate as a main component, a chromium film is formed to a thickness of about 800 angstroms on the substrate to be processed. A glass substrate of 5 inches square and 0.09 inches thick was used. A resist film is patterned on the chromium film of this glass substrate by exposing it to an electron beam and performing a predetermined development process.

The distance between the nozzle that sprays the treatment chemical and the glass substrate to be processed is maintained at 20 cm, and the time required for one reciprocating movement of the nozzle is set to about 2 seconds to chemically process the chromium film on the glass substrate. I did this.

After this chemical treatment, the resist film was removed and the dimensions of the patterned chromium film were measured. As a result, the standard deviation of the variation in dimensions on the surface of the substrate to be processed was 0.03 micrometers.

When this was treated with a chemical solution using the conventional apparatus shown in FIG. 2, the standard deviation of the dimensional variation within the surface of the substrate to be processed was 0.09 micrometers.

In the above embodiment, the nozzle was moved reciprocally with respect to a fixed substrate to be processed, but the same effect can be obtained even if the nozzle is fixed and the substrate to be processed is moved back and forth.

According to the present invention described above, the nozzle that sprays the chemical liquid and the substrate to be processed are moved relatively back and forth to spray the chemical liquid onto the surface of the substrate to be processed to perform the chemical liquid treatment. By appropriately setting the number of times or the time required for one round trip, it is possible to perform various chemical treatments over short to long periods of time.
It has the advantage of being able to achieve extremely high processing accuracy.

[Brief explanation of drawings]

Figures 1-5 are cross-sectional views explaining the concept of processing steps for substrates to be processed, Figure 2 is a side cross-sectional view showing an example of a conventional chemical treatment process, and Figure 3 is a conventional chemical treatment process. FIG. 4 is a side view showing another example of the present invention. 10... Substrate to be processed 11... Nozzle 13...
Drive source patent applicant Oki Electric Industry Co., Ltd. agent Patent attorney Takashi Kanakura Two wheels 20 Noodles 3-Kaku 41 Procedural amendment (voluntary) October 21, 1980 Commissioner of the Japan Patent Office Kazuo Wakasugi Tono 1 Indication of the case Relationship to Patent Application No. 078117 of 1980 Patent Applicant Address 1-7-12 Toranomon, Minato-ku, Tokyo Name (029) Oki Electric Industry Co., Ltd. Representative Hashimoto
Nankai man 4, agent 7 Contents of the amendment As shown in the attached sheet. 121. -1. Description (full text corrected) 1. Name of the invention Substrate processing device for chemical liquid treatment in the processing process of a substrate to be processed 2. Claim 1. A nozzle that sprays a chemical liquid and a substrate to be processed are opposed to each other. 1. A substrate processing apparatus for chemical liquid treatment in a processing process of a substrate to be processed, characterized in that the chemical liquid is sprayed uniformly onto the surface of the substrate to be processed by relatively reciprocating in parallel with the substrate. 3. DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a substrate processing apparatus for chemical treatment in a processing process of a substrate to be processed, such as a semiconductor substrate or a mask substrate used in the manufacture of semiconductor integrated circuits and the like. The concept of processing steps will be explained using FIG. 1 by taking a mask substrate as an example. In FIG. 1 (4), 1 is a glass substrate, 2 is a metal film formed on this glass substrate 1, and 3 is a resist film coated on this metal film 2 and heat-treated as necessary. . As shown in FIG. 1, desired portions of the resist film 3 thus formed are irradiated with radiation such as electron beams, ultraviolet rays, or X-rays, and the irradiated resist film 3a portion and the unirradiated resist film 3b portion are separated. be physically and chemically different. Thereafter, as shown in FIG.
Resist film 3 irradiated by treatment with
Only 8 parts are obtained and subjected to heat treatment or plasma treatment as necessary. After that, as shown in FIG. 1(b), the resist film 3 is
A desired metal film pattern 2at is obtained by treating the metal film 2 with a chemical solution (generally referred to as an etching solution) that corrodes the metal film 2 using a as a masking material. Finally, as shown in FIG. 1(g), the resist film 3a that is no longer needed is treated with a chemical solution and removed as necessary. The above-mentioned processing steps are performed in principle in exactly the same way as in the processing steps for semiconductor substrates. As a first example of conventional substrate processing, a chemical processing device (developing device) used in the step shown in FIG. 1 (Q) will be explained with reference to FIG. 2.As shown in FIG. The entire mask substrate 6 held by a jig (not shown) is placed in the processing tank 5 containing the chemical solution and is immersed in the developer 4 for a safe period of time to process the mask substrate. ), the flow velocity of the developer 4 near the resist film surface of the mask substrate 6 in the developer 4 is slightly different between the central part and the peripheral part of the mask substrate 6 according to the shape of the mask substrate 6. That is, Since the developing speed is different between the central part and the peripheral part of the mask substrate 6, the resist film on the mask substrate 6 is developed unevenly. As a second example of a conventional substrate processing apparatus, there is a chemical processing apparatus ( The etching device) will be explained with reference to FIG. 3. As shown in FIG. The chemical solution is sprayed onto the substrate 6. At this time, the treatment is performed while rotating the mask substrate 6 at a desired speed using the rotating device 7.The reason why the mask substrate 6 is rotated in this processing step is to control the amount of the sprayed chemical solution onto the mask substrate. However, the flow rate of the chemical solution on the surface of the mask substrate 6 is different between the center of rotation and the periphery of the mask substrate, and as a result, the processing speed is different and the chemical solution is processed uniformly. The essential cause of this drawback lies in the fact that processing is performed while rotating the mask substrate.As an example of the conventional substrate processing equipment mentioned above, the resist film on the mask substrate is immersed in a developer solution for development processing. A developing device that performs
The description has been made using an etching apparatus that etches a metal film formed on a mask substrate by spraying an etching solution while rotating the substrate. The apparatus and the developing device that performs the developing process by spraying a developing solution while rotating the substrate to be processed also have the above-mentioned drawbacks. had similar shortcomings. The present invention aims to solve the above-mentioned drawbacks, and the present invention performs complete processing by reciprocating the nozzle and the processing surface of the substrate to be processed relative to each other in parallel, and spraying a processing chemical from the nozzle. It is characterized in that a uniform treated surface can be formed by treating the treated surface under the same conditions. An embodiment of the present invention will be described below with reference to FIG. The drawing shows a side view, and in the drawing, 10 is a substrate to be processed, 11
is a nozzle that sprays a processing chemical, and a nozzle or a plurality of nozzles are installed in series so that the shape of the processing chemical to be sprayed on the surface of the substrate 10 to be processed is linear with respect to the front direction of the drawing. The width of the spray from the nozzle is preferably wider than the width of the substrate 10 to be processed. 12 is a guide for guiding the movement of this nozzle 11;
3 is a drive source for reciprocating the nozzle 11 along the guide rail 12. Note that the range in which the nozzle 11 reciprocates is the substrate 10 to be processed.
The longer the better. The operation of the above configuration will be described below.
When the nozzle 11 is moved back and forth along the direction, the processing chemical liquid injected from the nozzle 11 is sprayed onto the surface of the substrate 10 to be processed, but at this time, the flow rate of the processing chemical liquid is constant at any point on the surface of the substrate 10 Therefore, a uniform processing speed can be obtained at any point on the substrate to be processed, and as a result, the substrate to be processed 10 can be processed uniformly. A specific example of the above embodiment is shown below. An etching solution containing ceric ammonium nitrate as a main component is used as the processing chemical solution, and a chromium film of about 800 angstroms in thickness is formed on the substrate to be processed. inch angle,
A glass substrate with a thickness of OD 9 inches was used. The chromium film of this glass substrate is exposed to an electron beam, and the resist film is patterned by a predetermined development process. The distance between the nozzle that sprays the treatment chemical and the glass substrate to be treated is maintained at 20 centimeters, and the time required for each reciprocating movement of the nozzle is set to about 2 seconds to spray the chemical on the chromium film on the glass substrate. processed. After this chemical treatment, the resist film was removed and the dimensions of the patterned chromium film were measured. As a result, the standard deviation of the variation in dimensions on the surface of the substrate to be processed was 0.03 micrometers. Using the same etching solution as in the above example and a substrate to be processed that was prepared in the same way, chemical processing was performed using the conventional apparatus shown in FIG. The standard deviation of the dimensional variation was 0.09 micrometers. At this time, the chemical solution in the processing tank 5 shown in FIG. 2 is an etching solution. In the above embodiment, the nozzle was moved reciprocally with respect to a fixed substrate to be processed, but the same effect can be obtained even if the nozzle is fixed and the substrate to be processed is moved back and forth. According to the present invention described above, the nozzle that sprays the chemical liquid and the substrate to be processed are relatively moved back and forth to spray the chemical liquid onto the surface of the substrate to be processed to perform the chemical liquid treatment, thereby achieving extremely high processing accuracy. It has the advantage of being highly finished. 4. Brief description of the drawings Figures 1-5 are cross-sectional views explaining the concept of processing steps for substrates to be processed. Figure 2 is a side sectional view showing an example of a conventional chemical treatment process. This figure is a side view showing another example of the conventional chemical treatment process, and FIG. 4 is a side view showing one embodiment of the present invention. 10... Substrate to be processed 11... Nozzle 13... = Drive source patent applicant Takashi Kanakura, patent attorney representing Oki Electric Industry Co., Ltd.

Claims (1)

[Claims] 1. Processing process for a substrate to be processed, characterized in that a nozzle that sprays a chemical solution and the substrate to be processed are opposed to each other and relatively moved back and forth in parallel to uniformly spray the chemical solution onto the surface of the substrate to be processed. Substrate processing equipment for chemical liquid processing.