JPS58185417A - Deposition of thick carbon film - Google Patents

Abstract

PURPOSE:To form a thick carbon film having high adhesivity, by depositing a silicon film to the substrate, and depositing ionized carbon thereto. CONSTITUTION:The vacuum chamber 10 of a high-frequency ion plating device etc. is evacuated in high vacuum, Ar gas etc. is introduced into the chamber 10 through the gas inlet 12, and the surface of the metallic substrate 9, e.g. Al plate, is cleaned by bombardment. The silicon 18 contained in the crucible 13 is evaporated by the irradiation with electron beam emitted from the electron gun 16 and deflected by the deflector 17. The silicon particles are ionized by the high frequency electric field, and attracted to the substrate 9 to form a silicon film on the substrate 9. The substrate 9 is mounted in an ionizing film-forming device, and a thick carbon film is deposited on the silicon film by ionizing the vapor of a compound having carbon component. A thick carbon film can be deposited in high adhesivity to the substrate by this process.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for forming a thick carbon film with good adhesion.

Carbon films exhibit unique characteristics depending on their manufacturing method.

FIG. 1 shows an ionization film forming apparatus for depositing a thick carbon film on a substrate by ionizing a gas of a compound having a carbon component. In this device, first, the inside of the chamber 1 to be exhausted is connected to the exhaust pipe 2.
The cathode filament 4 wound around the quartz rod 3 is heated by the heating power source 5. At the same time, the cylindrical anode electrode 6 and the cathode filament 4f each have a mesh-like side part.
A current of I['I is applied to l[I, and an angular free current high voltage is further applied between the cylindrical substrate 7 and the Neunomen l-.
Add. In this state C, full gas is introduced into the chamber 1 to be evacuated from the gas supply 1'l 8, and plasma discharge is generated within the electric field between the filament 4 and the anode electrode 6. Due to this discharge, argon ions (Ar”) are
V &71) direction, and the substrate surface is bombered and cleaned. After the cleaning, a hydrocarbon-based 7I such as benzene gas is supplied from the gas supply 118.
A gas is introduced into the chamber 1 to be evacuated. The gas is thermally decomposed by the heat of the cathode filament 4 and ionized by the electric field between the filament and the anode electrode 6 and the bombardment of hot electrons from the filament 4. The carbon ions generated by the ionization are accelerated toward the substrate by a negative high voltage applied to the cathode filament 4@ of the substrate 7, thereby forming an h-bon film on the U root i. In this way, the gas of the compound containing the script component is ionized and ionized onto the substrate.
The developed carbon film is extremely hard and translucent, so it can be used for a variety of things, such as the tips of grinding tools. By the way,
The carbon film formed in this manner to be thick (for example, 1 Å or more) is very hard and therefore has strong internal stress, and the adhesion of the film varies depending on the material of the underlying substrate. According to experiments, it adheres well to silicone, quartz glass, etc.
It has poor adhesion to metals and peels off easily.

The present invention was made in view of these points, and includes a substrate,
A new method has been developed in which a compound gas containing a carbon component is ionized, and before the ionized carbon is deposited in a thick film, a material that binds strongly to both the carbon film and the substrate is deposited as a binder in the form of a film. There is C which provides a membrane method.

That is, the present invention does not directly attach a thick carbon film to a substrate, but instead attaches a thick carbon film to a substrate through a binder that strongly binds both the carbon film and the substrate. However, it is possible to attach a thick carbon film with good adhesion.
After experimenting with various materials as this binder, we found that silicon was the most suitable binder material that strongly bonded to both the carbon film and the substrate.

FIG. 2 shows Kl? for attaching a silicon film as a binder to a metallic substrate 9, such as aluminum. This is a high-frequency ion plating device shown as an example. In this device, first, the inside of the chamber to be evacuated is 10°C. 'q1
The exhaust system connected externally to 1 allows air flow to the Changji Air Force (IJ),
Next, a gas is introduced into the gas supply port 12 from the gas supply port 12. At this time, frequency power is applied to the high frequency electrode 14 disposed between the substrate 9 and the crucible 13 (from the b frequency power source 15). A plasma waste current is generated. Since a high current of 11 current is applied to the substrate 9, the argon ion (Ar) bombards the surface of the substrate. Next, remove the electricity from the electron gun 16.
The silicon 18 housed in the crucible 13 is irradiated with the f-beam by the deflector 17 to evaporate the silicon. The silicon particles are ionized by the frequency electric field, and the ionized silicon is attracted to the substrate 9, forming a silicon film on the substrate 9F. Incidentally, reference numeral 19 denotes a heater heated by an external heating power source 20, which heats the substrate 9 to a certain temperature. If the substrate 9 is kept close to the hot particles flying to the substrate in this manner, the particles will easily adhere to the substrate, and the crystallinity of the attached film will also improve.

In this way, the metal substrate with the silicon film attached is
It is placed on the substrate 7 of the ionization film forming apparatus as shown in FIG. 1, and a thick carbon film is deposited on the silicon film.

The following is a part of the experiment. Titanium as a substrate.

Using aluminum, titanium dioxide as a binder,
A gold film was applied to each of the substrates, a carbon film was started to be applied to the soil, and the film thickness of the carbon film was measured using a film thickness monitor. It started to peel off from the binder. Next, a silicon film was applied as a binder to each of the substrates, and a carbon film was applied thereon. When the temperature reached about 2 to 3 -, the carbon film began to peel off from the binder.

Note that 7'+1 for attaching the binder to the substrate is not limited to high frequency ion plating, and other methods such as sputtering are also possible. Father, the process of attaching the /<inder to the substrate and the process of attaching the H-bond film to the binder were carried out in separate exhaust chambers (jnatsu r-f)"=, in the same exhaust chamber (j Nau-like). You can do it.

According to the present invention, a 2t & 4 stiff carbon film is formed with good adhesion via a binder.

[Brief explanation of the drawing]

Figures 1 and 2 show the practical application of the present invention/7I! These are the ionization decomposition equipment and the frequency ion plating equipment used for the removal. 1: Exhaust chamber, 3: Quartz rod, 4: Cathode (lament), 6: Anode electrode, 7: t&, 9: Metal character plate, 1
0: At air chamber, 14: I5! ! +I? 1 wave electrode, 18
: Silicon. Patent Applicant JEOL Ltd. Representative Tadahi Kasei

Claims (1)

[Claims] A method for forming a thick carbon film, in which silicon is adhered to a substrate in the form of a film, a gas of a compound having a carbon component is ionized to the protective film, and the ionized carbon is adhered in the form of a thick film.