JPS5912742B2 - Ion plating couch - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an ion blating device, particularly to an improvement in a high frequency excitation type ion blating device.

Conventional high-frequency excitation type ion blating equipment uses a high-frequency coil electrode placed near the evaporation source to generate high-frequency discharge of the introduced gas, ionizes the evaporated molecules, accelerates them with the negative potential of a separately provided substrate support, and ionizes them onto the substrate. This is a device that forms a coating on.

In this method, the operating gas atmosphere is 10-4 to 10-3To.
The operating range of the DC bipolar type, which is another method of ion brating, is 10-2T.
Compared to the ORR region, there is less influence of gas, and therefore a layer with good film quality and less impurities can be obtained. It is possible to prevent film damage and excessive temperature rise caused by sputtering of ionized gas particles of evaporated particles, and at the same time, due to the high ionization efficiency peculiar to high-frequency excited discharge, reactive ion plateation is possible. It has the characteristics of However, when the gas pressure is kept constant, if it is desired to improve the reactivity by increasing the plasma density and increasing the ionization efficiency, increasing the radio frequency power will not prevent the radio frequency voltage from increasing. As a result, the influence of the high-frequency coil electric field on the ionization region, for example, the ion trapping effect becomes stronger, making it necessary to further increase the accelerating cathode potential, and when using an electron beam evaporation source as an evaporation source, the electric j5 electron beam However, there remained problems such as being strongly affected by the high frequency coil.

The present invention provides a direct current voltage with a positive potential between the high frequency coil and the accelerating cathode of a high frequency excited ion blating device.
Alternatively, by inserting an electrode that can supply an AC voltage of 20 cm at a commercial frequency (50 to 60 Hz), we hope to be able to improve the ionization efficiency, which was the original objective, without increasing the high frequency power. It is based on what you have done.

Next, the present invention will be explained with reference to the drawings.

FIG. 1 is a diagram showing a high frequency excitation type ion blating device based on the present invention. Inside the bell gear 5 are an evaporation source (boat or electron beam) 1, an accelerating cathode (substrate mounting part) 2, a high frequency coil electrode (RF coil) 3, and an intermediate electrode 4.
, a gas inlet 6 is provided, 30 substrates can be attached to the acceleration cathode, and a negative potential is supplied from a DC high voltage power supply □. On the other hand, a high frequency voltage, a positive DC voltage, or an AC voltage is applied to the high frequency coil electrode 3 and the intermediate electrode 4, respectively.

Before performing ion blating, the gas atmosphere is first evacuated to the 10-5 Torr range using the exhaust system 10.
or. As the gas type, for example, argon gas is used at 10-4~
10-3T0rT is introduced, high frequency power is supplied up to a predetermined value, and argon gas is discharged.

Next, when any metal is slowly evaporated from the evaporation source, the metal particles are partially ionized by collisions with ionized gas particles in the argon gas plasma, electrons, etc., and at the high-frequency coil electrode part, resulting in ion emission unique to the evaporated particles. While presenting
Laminated on a cathode substrate to which a negative potential is applied. Before evaporation begins, a positive DC voltage or an AC voltage of 40°C is applied to the intermediate electrode.
By supplying .about.200 V, trapping of ionized particles in the vicinity of the above-described high frequency coil electrode can be prevented, and more efficient ion plating and reactive ion plating can be performed.

By arranging this intermediate electrode, it is now sufficient to supply 100 W of high-frequency power, whereas conventionally it was necessary to supply 200 W of high-frequency power, and since the voltage decreases as the power decreases, the trapping of ionized particles is reduced. The amount of ionized particles reaching the coil can be increased by that amount.

FIG. 2 is a diagram showing the relationship between the intermediate electrode potential and cathode current density when the high frequency power is 100 W and the accelerated cathode potential is -300 V. FIG.
It is a figure showing the relationship between high frequency power and cathode current density at the time of.

This shows that the density of ionized particles flowing into the cathode increases as the intermediate electrode potential and radio frequency power increase. From these relationships, in order to increase the cathode current density, it is necessary to use an intermediate electrode with fewer ion traps. It can be seen that insertion is more preferred.

As mentioned above, by adopting this method, it is possible to perform not only ordinary ion plating of single metals, but also reactive ion plating, such as the synthesis of metal oxides, carbides, nitrides, and borides, which especially requires less heating of the substrate. It is possible to do this efficiently.

Example 1 Accelerating cathode (substrate support part) placed 25 cm from the boat
After polishing, a 2×2.5×0.1.
A CWL stainless steel plate (SUS27) was attached, the vacuum chamber was evacuated to a 10-5T0rr range, argon gas was introduced, and the gas atmosphere was adjusted to 5×10-4T0n-.

High frequency power 100W 1 intermediate voltage 50V acceleration cathode potential -
500 was supplied to each sample, argon gas was discharged, and a hompart was applied in an argon atmosphere for 5 minutes to gradually evaporate the silver from the tungsten boat. The silver particles were ionized to produce blue ionic emission characteristic of silver, and a silver film was formed on the cathode substrate.

This coating had excellent adhesion even when bent, with no pinholes in appearance.

Example 2 25? from the evaporation source? Accelerating cathode placed above (board mounting part)
To, 2X2.5×0.1t with normal pre-treatment after polishing
? A stainless steel plate (SUS27) was attached, the inside of the vacuum chamber was evacuated to the 10-5 T0rr range, nitrogen gas was introduced, and the gas atmosphere was adjusted to 1 x 10-3 T0rr.

After supplying high frequency power of 100W, intermediate voltage of 100W, and accelerating cathode voltage of -500, discharging nitrogen gas and performing hompart for 5 minutes, the purity was 99.98 from an electron beam evaporation source.
When % of the titanium material is evaporated, nitrogen excited in the plasma reacts with titanium to form a titanium nitride film on the substrate.

Approximately 2 microns of titanium nitride coating has a wear test result of Hvl.
It exhibited wear resistance equivalent to a hardness of 5OO or more. In addition to the above examples, other metals such as gold, nickel, palladium, tantalum, zirconium, magnesium, manganese, silicon, and cadmium may also be used. , ion plating of many metals such as aluminum, indium, tin, zinc, etc., ion plating of the above metals to form oxides, nitrides, borides, and their composites, and ion plating of ceramics such as glass. Teing etc. can be done easily.

[Brief explanation of drawings]

FIG. 1 is a diagram showing a high-frequency excitation type ion plating apparatus based on the present invention, FIG. 2 is a diagram showing the relationship between intermediate electrode potential and cathode current density when the high-frequency power is 100 W and the accelerated cathode potential is -300 V. The figure shows accelerated cathode potential -300V
1 is a diagram showing the relationship between high frequency power and cathode current density when the intermediate electrode potential is 0V. 1... Evaporation source (boat or electron beam), 2.
... Acceleration cathode (board mounting part), 3 ... High frequency coil electrode (RF Koino (c), 4 ... Intermediate electrode, 5 ... Bell jar, 6 ...Gas inlet, 7...DC high voltage power supply, 10...
・Exhaust system.

Claims (1)

[Claims] 1. A vacuum device consisting of a vacuum chamber exhaust system is equipped with at least an inlet for one or more specific gases, an evaporation source capable of evaporating the evaporation material, an accelerating cathode, a high frequency coil electrode for generating gas discharge, and a high frequency electrode. An ion plating apparatus characterized by comprising an intermediate electrode that can apply positive direct current or alternating current between the accelerating cathode and the accelerating cathode.