JPS58182277A - 高速ダイオ−ド - Google Patents

高速ダイオ−ド

Info

Publication number
JPS58182277A
JPS58182277A JP58053471A JP5347183A JPS58182277A JP S58182277 A JPS58182277 A JP S58182277A JP 58053471 A JP58053471 A JP 58053471A JP 5347183 A JP5347183 A JP 5347183A JP S58182277 A JPS58182277 A JP S58182277A
Authority
JP
Japan
Prior art keywords
layer
diode
thickness
current
impurity concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58053471A
Other languages
English (en)
Japanese (ja)
Inventor
ヨラン・コリユモ−
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=9272559&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JPS58182277(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of JPS58182277A publication Critical patent/JPS58182277A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes

Landscapes

  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP58053471A 1982-03-30 1983-03-29 高速ダイオ−ド Pending JPS58182277A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8205435 1982-03-30
FR8205435A FR2524715A1 (fr) 1982-03-30 1982-03-30 Diode rapide

Publications (1)

Publication Number Publication Date
JPS58182277A true JPS58182277A (ja) 1983-10-25

Family

ID=9272559

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58053471A Pending JPS58182277A (ja) 1982-03-30 1983-03-29 高速ダイオ−ド

Country Status (5)

Country Link
EP (1) EP0090722B1 (enExample)
JP (1) JPS58182277A (enExample)
CA (1) CA1232974A (enExample)
DE (1) DE3361323D1 (enExample)
FR (1) FR2524715A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007184439A (ja) * 2006-01-10 2007-07-19 Shindengen Electric Mfg Co Ltd 半導体装置

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5929469A (ja) * 1982-08-11 1984-02-16 Hitachi Ltd 半導体装置
FR2556882B1 (fr) * 1983-12-14 1986-05-23 Fairchild Camera Instr Co Composant semiconducteur rapide, notamment diode pin haute tension
DE3633161A1 (de) * 1986-09-30 1988-04-07 Licentia Gmbh Halbleiterbauelement mit einer anodenseitigen p-zone und einer anliegenden schwach dotierten n-basiszone
FR2638892B1 (fr) * 1988-11-09 1992-12-24 Sgs Thomson Microelectronics Procede de modulation de la quantite d'or diffusee dans un substrat de silicium et diode rapide obtenue par ce procede
DE4201183A1 (de) * 1992-01-17 1993-07-22 Eupec Gmbh & Co Kg Leistungsdiode
JPH06314801A (ja) * 1993-03-05 1994-11-08 Mitsubishi Electric Corp 半導体装置およびその製造方法
EP0931336B1 (en) * 1996-10-14 2009-07-29 Cree, Inc. A method for producing a silicon carbide bipolar device and a silicon carbide bipolar device
DE10344609B3 (de) * 2003-09-25 2005-07-21 Infineon Technologies Ag Hochfrequenzdiode
JP5135666B2 (ja) * 2005-04-14 2013-02-06 株式会社日立製作所 電力変換装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1576940A (enExample) * 1968-08-13 1969-08-01
US3553536A (en) * 1968-11-19 1971-01-05 Rca Corp Semiconductor rectifiers having controlled storage and recovery characteristics
US3727116A (en) * 1970-05-05 1973-04-10 Rca Corp Integral thyristor-rectifier device
US3710203A (en) * 1971-11-05 1973-01-09 Fmc Corp High power storage diode
DE2608432C3 (de) * 1976-03-01 1981-07-09 Siemens AG, 1000 Berlin und 8000 München Leistungsdiode
FR2347781A1 (fr) * 1976-04-08 1977-11-04 Alsthom Cgee Thyristor a conduction inverse

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007184439A (ja) * 2006-01-10 2007-07-19 Shindengen Electric Mfg Co Ltd 半導体装置

Also Published As

Publication number Publication date
CA1232974A (en) 1988-02-16
EP0090722A1 (fr) 1983-10-05
FR2524715B1 (enExample) 1984-05-18
EP0090722B1 (fr) 1985-11-27
DE3361323D1 (en) 1986-01-09
FR2524715A1 (fr) 1983-10-07

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