JPS5818122B2 - Shoseki Hannousouchi - Google Patents

Shoseki Hannousouchi

Info

Publication number
JPS5818122B2
JPS5818122B2 JP50060936A JP6093675A JPS5818122B2 JP S5818122 B2 JPS5818122 B2 JP S5818122B2 JP 50060936 A JP50060936 A JP 50060936A JP 6093675 A JP6093675 A JP 6093675A JP S5818122 B2 JPS5818122 B2 JP S5818122B2
Authority
JP
Japan
Prior art keywords
zone
crystallization
classification
crystals
crystallization zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP50060936A
Other languages
Japanese (ja)
Other versions
JPS51136572A (en
Inventor
山本駿一
小祝義久
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eneos Corp
Original Assignee
Nippon Oil Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Oil Corp filed Critical Nippon Oil Corp
Priority to JP50060936A priority Critical patent/JPS5818122B2/en
Publication of JPS51136572A publication Critical patent/JPS51136572A/en
Publication of JPS5818122B2 publication Critical patent/JPS5818122B2/en
Expired legal-status Critical Current

Links

Description

【発明の詳細な説明】 本発明は、所望する粗大結晶を連続的に製造かつ分離す
る晶析反応装置に関し、例えば希硫酸と石灰石との中和
反応により石膏を得るごとき場合に特に好ましく適用し
得る晶析反応装置に関する;ものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a crystallization reaction apparatus for continuously producing and separating desired coarse crystals, and is particularly preferably applied to, for example, obtaining gypsum by a neutralization reaction between dilute sulfuric acid and limestone. It relates to a crystallization reaction apparatus for obtaining.

通常の晶析操作では、結晶核の新たな発生と結晶の成長
とが同時に進行し、常に結晶を所望の粗大結晶にまで確
実に成長させるのは容易でなく、しばしば多量の微細結
晶あるいは針状結晶等の好ましからざる形状を呈するに
至る。
In normal crystallization operations, the generation of new crystal nuclei and the growth of crystals proceed at the same time, and it is not easy to always ensure that the crystals grow to the desired coarse crystal size. This leads to the appearance of undesirable shapes such as crystals.

この難点を回避する試みとして、晶析反応装置へ別途種
晶を添加し、しかもその添加速度を調節することにより
、結晶の粒径分布を制御する方法、あるいは結晶溶媒を
所定速度で蒸発させるかまたは冷却するなど・の方法に
より結晶成長を制御する方法が行われている。
Attempts to avoid this difficulty include adding seed crystals separately to the crystallization reactor and adjusting the rate of addition to control the crystal particle size distribution, or evaporating the crystal solvent at a predetermined rate. Alternatively, methods of controlling crystal growth by methods such as cooling have been used.

しかし化学反応を伴う反応晶析操作では、一般に化学反
応成分間の反応速度が大きく、このため化学反応を伴わ
ない通常の単なる結晶操作と異なり、晶析系の過飽和度
を制御することがきわめて困難で、常に所望の速度で結
晶核を連続的に発生させ、所望の粒径にまで成長させる
ことは容易でない。
However, in reactive crystallization operations that involve chemical reactions, the reaction rate between chemically reactive components is generally high, and for this reason, unlike ordinary simple crystallization operations that do not involve chemical reactions, it is extremely difficult to control the supersaturation degree of the crystallization system. However, it is not easy to continuously generate crystal nuclei at a desired rate and grow them to a desired grain size.

。所望する粒径の結晶を得るために
晶析反応装置1に要求される条件としては、 (1)晶析系内に過剰の結晶核を発生させないこと(1
1)晶析反応系結晶のスラリー濃度を高く保つこと
゛ (ND 成長させるべき微細結晶を粗大結晶から分離
し、晶析反応系へ循環、懸濁させておくこと等が挙げら
れる。
. The conditions required of the crystallization reaction apparatus 1 in order to obtain crystals with a desired particle size are: (1) not to generate excessive crystal nuclei in the crystallization system;
1) Maintaining a high slurry concentration of crystallization reaction system crystals
(ND) Separating the fine crystals to be grown from the coarse crystals and circulating and suspending them in the crystallization reaction system can be mentioned.

以上の3点につき更に説明を加えると、まず第−に、過
剰の結晶核を発生させないためには、化学反応成分を母
液で稀釈して反応させることにより、反応生成物の過飽
和度を比較的低く保つ必要がある。
To further explain the above three points, first of all, in order to prevent the generation of excessive crystal nuclei, the degree of supersaturation of the reaction product can be relatively reduced by diluting the chemical reaction components with the mother liquor and reacting. Need to keep it low.

また、反応を伴う晶析においては、局部的な攪拌不均一
に基因して結晶核が過剰に発生する危険があるため、均
一な攪拌が要求される。
Further, in crystallization accompanied by a reaction, uniform stirring is required because there is a risk that crystal nuclei will be generated excessively due to localized non-uniform stirring.

第二のスラリー濃度を高く保つことは、晶析系の過飽和
度を下げて過剰の種晶の発生を防ぎ、結晶成長を促す観
点から不可欠な操作である。
Keeping the second slurry concentration high is an essential operation from the viewpoint of reducing the degree of supersaturation of the crystallization system, preventing the generation of excessive seed crystals, and promoting crystal growth.

既存のり、T、B(ドラフトチューブバッフル)型晶析
装置の如く、ドラフトチューブの外側にバッフルを備え
、セトリング域で固液分離して得られる母液を抜きだす
濃縮法もあるが、例えば希硫酸を石灰石で中和し石膏を
製造するような、ガス発生を伴う晶析操作では、ガス(
上昇気流)がセl−IJング域の固液分離効果を減する
ため、このようなり、T、B方式は、ガス発生を伴う晶
析反応系のスラリーを濃縮するには適しない。
There is also a concentration method, such as the existing glue, T, and B (draft tube baffle) type crystallizers, which is equipped with a baffle on the outside of the draft tube and extracts the mother liquor obtained by solid-liquid separation in the settling region. In crystallization operations that involve gas generation, such as the production of gypsum by neutralizing limestone with limestone, gas (
As such, the T and B methods are not suitable for concentrating slurry in a crystallization reaction system that involves gas generation because the rising air flow reduces the solid-liquid separation effect in the cell-IJing region.

従ってスラリー濃度を高く保つための適当な手段が必要
とされる。
Appropriate means are therefore required to keep the slurry concentration high.

第三に、単なる完全混合槽型晶析装置では、得られる製
品の粒径分布が広がるため、粗大結晶のみを選択的に取
出す分級装置を別に設け、しかも微細結晶を常に晶析反
応系へ循環する必要がある。
Thirdly, since a simple complete mixing tank type crystallizer will widen the particle size distribution of the resulting product, a separate classification device will be installed to selectively take out only coarse crystals, and fine crystals will always be circulated to the crystallization reaction system. There is a need to.

本発明は上記の3条件を満足するよう配慮した装置を提
供する。
The present invention provides a device designed to satisfy the above three conditions.

この装置は、中央部(晶析域)、下部(分級域)および
上部(清澄域)の3域から構成され、 (1)中央部(晶析域)は晶析反応を行なうに必要な化
学物質を供給するための管、ならびに晶析反応により生
成した結晶スラリーをかきまぜ懸濁させる攪拌機を備え
、 (2)下部(分級域)は晶析域で生成した結晶を分級す
ることを目的とし、得ら□れた粗大結晶を晶析反応装置
外へ抜き出す取出口を備え、また分。
This equipment consists of three zones: the center (crystallization zone), the bottom (classification zone), and the top (clarification zone). It is equipped with a tube for supplying substances and a stirrer to stir and suspend the crystal slurry produced by the crystallization reaction. (2) The lower part (classification zone) is designed to classify the crystals produced in the crystallization zone. Equipped with an outlet for extracting the obtained coarse crystals to the outside of the crystallization reactor.

級された微細結晶を晶析域へ戻すために清澄母液を分級
域へ供給する母液供給管とを備え、なお、晶析域の攪拌
機の攪拌により分級効率が低下するのを防止するための
渦防止板を晶析域と分級域の境界又は分級域上部に具備
し、 。
A mother liquor supply pipe is provided to supply the clarified mother liquor to the classification zone in order to return the classified fine crystals to the crystallization zone. A prevention plate is provided at the boundary between the crystallization zone and the classification zone or at the top of the classification zone.

(3)上部則ち清澄域は、中央部(晶析域)から送り込
まれた希薄スラリーを清澄させ、得られる母液を溢流さ
せることを目的とし、下端開放のロート状仕切板により
中央部(晶析域)と区切られ、しかも晶析域から気体が
発生するか、または晶析域へ別途気体が送入された場合
でも、この気体が晶析域の結晶を清澄域へ同伴すること
を防止するためのガス抜き管を備えていること を特徴とする晶析反応装置である。
(3) The upper part, or clarification zone, is designed to clarify the dilute slurry fed from the center (crystallization zone) and allow the resulting mother liquor to overflow. Even if gas is generated from the crystallization zone or is separately introduced into the crystallization zone, this gas will not entrain the crystals in the crystallization zone to the clarification zone. This is a crystallization reaction apparatus characterized by being equipped with a gas venting pipe for preventing the above.

更に詳しく述べれば、本発明の装置は上部に清澄域、中
央部に晶析域、下部に分級域を備え、この晶析域におい
ては、反応成分を例えば攪拌機で混合し、反応生成物が
局部的に過度の過飽和に達するのを防止する。
More specifically, the apparatus of the present invention has a clarification zone in the upper part, a crystallization zone in the center, and a classification zone in the lower part. prevent reaching excessive supersaturation.

晶析域で生成した反応生成物のうち希薄スラリーを清澄
域において比重差により清澄母液と濃厚スラリーに分離
し、清澄母液を溢流させるとともに、濃厚スラリーを晶
析域へ戻すことにより、当然のことながら晶析域のスラ
リー濃度が高められる。
Among the reaction products generated in the crystallization zone, the dilute slurry is separated into a clarified mother liquor and a thick slurry in the clarification zone due to the difference in specific gravity, and by overflowing the clarified mother liquor and returning the thick slurry to the crystallization zone, the natural In particular, the slurry concentration in the crystallization zone is increased.

晶析域の攪拌により清澄域の清澄作用が妨害されること
を防ぐために、清澄域と晶析域とは、下端開放のロート
状仕切板で仕切られる。
In order to prevent the clarification action of the clarification zone from being disturbed by stirring in the crystallization zone, the clarification zone and the crystallization zone are separated by a funnel-shaped partition plate with an open bottom end.

また晶析域には、発生するガスあるいはここへ必要に応
じて送入されたガスにより晶析域の結晶が清澄域へ同伴
されるのを防止するためのガス抜き管を備える。
The crystallization zone is also equipped with a gas vent pipe for preventing the crystals in the crystallization zone from being entrained into the clarification zone by the gas generated or the gas introduced there as needed.

更に分級域の底部へ清澄母液を供給し、この母液を上向
きに流すことにより結晶を分級し、所望する粒径の粗大
結晶を底部より抜き出すとともに微細結晶は晶析域へ戻
す。
Further, a clarified mother liquor is supplied to the bottom of the classification zone, and the mother liquor is allowed to flow upward to classify the crystals, extracting coarse crystals of a desired particle size from the bottom and returning fine crystals to the crystallization zone.

また晶析域の攪拌により分級域の分級効率が低下するの
を防ぐため、渦防止板を晶析域と分級域の間又は分級域
上部に設ける。
Further, in order to prevent the classification efficiency of the classification zone from decreasing due to stirring in the crystallization zone, a vortex prevention plate is provided between the crystallization zone and the classification zone or above the classification zone.

このような考慮を施した本願発明の晶析反応装置により
、初めて前記3条件を満たし、所望する晶析反応操作を
容易に実施できるのである。
With the crystallization reaction apparatus of the present invention that takes such considerations into account, the three conditions mentioned above can be satisfied for the first time, and the desired crystallization reaction operation can be easily carried out.

本発明の装置の1例を添付図に示す。An example of the device of the invention is shown in the accompanying drawing.

但し本発明はこの実施例に制約されるものではない。However, the present invention is not limited to this embodiment.

1は円筒形の竪型攪拌槽に類似の晶析反応装置で、反応
成分は反応物供給管7および8を径て晶析域3へ供給さ
れ、攪拌される。
Reference numeral 1 denotes a crystallization reaction apparatus similar to a cylindrical vertical stirring tank, in which reaction components are supplied to the crystallization zone 3 through reactant supply pipes 7 and 8 and stirred.

晶析域3は下端開放のロート状仕切板5aおよび5bに
より清澄域2と区切られ、攪拌機9による粒子懸濁は清
澄域2までは及ばない。
The crystallization zone 3 is separated from the clarification zone 2 by funnel-shaped partition plates 5a and 5b with open bottom ends, and particle suspension by the stirrer 9 does not reach the clarification zone 2.

また上記のロート状仕切板5aの傾斜角αを、結晶の安
息角以上に設計しておくことにより、清澄域で沈降した
結晶を晶析域へ戻すよう配慮されている。
Further, by designing the inclination angle α of the funnel-shaped partition plate 5a to be greater than the angle of repose of the crystals, consideration is given to returning the crystals that have settled in the clarification region to the crystallization region.

さらにロート状仕切板5bの開きおよび傾斜角は、仕切
板5aと共同して下記機能を発揮するようきめればよい
Furthermore, the opening and inclination angle of the funnel-shaped partition plate 5b may be determined so as to exhibit the following functions in cooperation with the partition plate 5a.

すなわち、反応により発生するガス、例えば石灰石で希
硫酸を中和する際に生成する炭酸ガス、あるいは必要に
応じ晶析域へ送入されたガスが、浮上する際に、晶析域
内の結晶を清澄域へ同伴することを防止するための遮蔽
およびガス収集をもロート状仕切板5a 、sbが行な
う。
In other words, the gas generated by the reaction, such as carbon dioxide gas generated when dilute sulfuric acid is neutralized with limestone, or the gas sent to the crystallization zone as needed, destroys the crystals in the crystallization zone when it floats to the surface. The funnel-shaped partition plates 5a and sb also perform shielding and gas collection to prevent the gas from being entrained into the clearing area.

該ロート状仕切板には、収集された気体を晶析反応系外
へ放出するガス抜き管6aおよび6bをロート状仕切板
の上部に備える。
The funnel-shaped partition plate is provided with gas vent pipes 6a and 6b at the upper part of the funnel-shaped partition plate for discharging the collected gas to the outside of the crystallization reaction system.

また分級域4では微細結晶を再び晶析域3へ戻すことを
目的として、清澄域2から、母液を循環ポンプ12によ
り母液循環送入パイプ11、母液供給パイプ13を径で
分級域の底部へ送り込み、この母液の上昇流により結晶
を分級し、残存する粗大結晶を結晶取出口10から外部
へ抜き出す。
In addition, in the classification zone 4, in order to return the fine crystals to the crystallization zone 3, the mother liquor is sent from the clarification zone 2 to the bottom of the classification zone using the circulation pump 12 through the mother liquor circulation feed pipe 11 and the mother liquor supply pipe 13. The crystals are classified by the upward flow of the mother liquor, and the remaining coarse crystals are extracted from the crystal outlet 10 to the outside.

この場合攪拌機9による渦流が分級域での結晶分級効果
を低減させることを防ぐため、渦防止板14を1枚ない
し複数枚設置することが望ましい。
In this case, in order to prevent the vortex generated by the stirrer 9 from reducing the crystal classification effect in the classification zone, it is desirable to install one or more vortex prevention plates 14.

なお本実施例では溢流用に溢流液出口16および清澄域
に混入したガス又はガス抜き管を経て清澄域上部に蓄積
したガスを排出するためのガス出口15を設けである。
In this embodiment, an overflow liquid outlet 16 is provided for overflow, and a gas outlet 15 is provided for discharging gas mixed into the clarification area or gas accumulated in the upper part of the clarification area via a gas vent pipe.

以上で明らかなように、本発明の装置は結晶核が過剰に
発生するのを防止しつつ、結晶成長を促すに必要な濃縮
、攪拌、清澄、分級などの諸操作を行ない、所望する粗
大結晶を製造するための簡単な構造の晶析反応装置であ
る。
As is clear from the above, the apparatus of the present invention prevents excessive generation of crystal nuclei while performing various operations such as concentration, stirring, clarification, and classification necessary to promote crystal growth, and produces desired coarse crystals. This is a crystallization reactor with a simple structure for producing .

【図面の簡単な説明】[Brief explanation of drawings]

図は本発明の一実施例を示す縦断面図である。 1・・・・・・晶析反応装置本体、2・・・・・・清澄
域、3・・・・・・晶析域、4・・・・・・分級域、5
a 、 sb・・・・・・ロート状仕切板、6a16b
・・・・・・ガス抜き管、7・・°°°°反応物供給管
、8・・・・・反応物供給管、9・・・・・・攪拌機、
10・・・・・・結晶取出口、11・・・・・・母液循
環送入、Noイブ、12・・・・・・ポンプ、13・・
・・・・母液供給パイプ、14・・・・・・渦防止板、
15・・・・・・ガス出口、16・・・・・・溢流液出
口、α・・・・・・傾斜角。
The figure is a longitudinal sectional view showing an embodiment of the present invention. 1... Crystallization reactor main body, 2... Clarification zone, 3... Crystallization zone, 4... Classification zone, 5
a, sb... funnel-shaped partition plate, 6a16b
... Gas venting pipe, 7 ... °°°° reactant supply pipe, 8 ... Reactant supply pipe, 9 ... Stirrer,
10...Crystal extraction port, 11...Mother liquid circulation feed, No. 12...Pump, 13...
... Mother liquor supply pipe, 14 ... Vortex prevention plate,
15...Gas outlet, 16...Overflow liquid outlet, α...Inclination angle.

Claims (1)

【特許請求の範囲】 1 所望の粗大結晶を連続的に生成、分離する晶析反応
装置であって、該装置の本体を構成する晶析反応塔はそ
の中央部を晶析域、下部を分級域、および上部を清澄域
として使用され、 (1)晶析域は、晶析反応させるべき反応成分を晶析域
に導入する管、および生成した結晶スラリーをかきまぜ
懸濁させるための攪拌手段を備え、(2)分級域は、晶
析域で生成した所望粗大結晶を晶析反応装置外へ抜き出
す取出口、分級された微細結晶を晶析域へ戻すために清
澄母液を分級域へ供給するための手段、および晶析域の
攪拌による分級効率の低下を防”止するための渦防止板
を具備し、および、 (3)清澄域は、晶析域から送りこまれる稀薄スラリー
を清澄させ、得られた清澄母液を溢流させる管、清澄母
液を必要に応じて分級域へ循環送入するための管、なら
びに晶析域の攪拌による清澄効率の低下を防止しかつ晶
析域で反応により発生または必要に応じ外部より晶析域
へ送られた気体が晶析域の結晶を清澄域へ随伴するのを
防止するためにガス抜き管を備えた下端開放ロート状仕
切板のごとき防止手段を備えていることを特徴とする前
記晶析反応装置。
[Scope of Claims] 1. A crystallization reaction device for continuously producing and separating desired coarse crystals, wherein a crystallization reaction tower constituting the main body of the device has a crystallization zone in the center and a classification zone in the lower part. (1) The crystallization zone includes a tube for introducing the reaction components to be crystallized into the crystallization zone, and a stirring means for stirring and suspending the formed crystal slurry. (2) The classification zone includes an outlet for extracting the desired coarse crystals generated in the crystallization zone out of the crystallization reactor, and a supply port for supplying the clarified mother liquor to the classification zone in order to return the classified fine crystals to the crystallization zone. and a vortex prevention plate to prevent a drop in classification efficiency due to agitation in the crystallization zone; A tube for overflowing the obtained clarified mother liquor, a tube for circulating the clarified mother liquor to the classification zone as necessary, and a tube for preventing a decrease in clarification efficiency due to stirring in the crystallization zone and for preventing the reaction from occurring in the crystallization zone. In order to prevent the gas generated or sent from the outside to the crystallization zone from entraining the crystals in the crystallization zone to the clarification zone, preventive means such as a funnel-shaped partition plate with an open bottom end equipped with a gas vent pipe are provided. The crystallization reaction apparatus characterized in that it comprises:
JP50060936A 1975-05-23 1975-05-23 Shoseki Hannousouchi Expired JPS5818122B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50060936A JPS5818122B2 (en) 1975-05-23 1975-05-23 Shoseki Hannousouchi

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50060936A JPS5818122B2 (en) 1975-05-23 1975-05-23 Shoseki Hannousouchi

Publications (2)

Publication Number Publication Date
JPS51136572A JPS51136572A (en) 1976-11-26
JPS5818122B2 true JPS5818122B2 (en) 1983-04-11

Family

ID=13156749

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50060936A Expired JPS5818122B2 (en) 1975-05-23 1975-05-23 Shoseki Hannousouchi

Country Status (1)

Country Link
JP (1) JPS5818122B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104661963A (en) * 2012-09-28 2015-05-27 住友金属矿山株式会社 Nickel-cobalt compound hydroxide and method and device for producing same, positive electrode active substance for nonaqueous electrolyte secondary cell and method for producing same, and nonaqueous electrolyte secondary cell

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Publication number Priority date Publication date Assignee Title
CN104661963A (en) * 2012-09-28 2015-05-27 住友金属矿山株式会社 Nickel-cobalt compound hydroxide and method and device for producing same, positive electrode active substance for nonaqueous electrolyte secondary cell and method for producing same, and nonaqueous electrolyte secondary cell

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