JPS58176922A - Plasma cvd apparatus - Google Patents

Abstract

PURPOSE:To continuously form high-quality films on a number of substrates with an inexpensive apparatus and high efficiency without enlarging the size of the apparatus by a method wherein a rod-like electrode is arranged at the center of a plasma CVD processing tank and a polygonal tubular holder provided with substrate holding portions is disposed facing the rod-like electrode. CONSTITUTION:A vacuum preparation chamber 1 and respective plasma CVD processing tanks 6a, 6b are held at a predetermined high vacuum condition, and then tubular holders 11a, 11b are rotated in the direction of arrows C by driving units 13a, 13b to form films on a number of substrates 5 arranged on the inner surfaces of the tubular holders 11a, 11b facing electrodes 10a, 10b, respectively. Next, with the tubular holders 11a, 11b being stopped in rotation thereof, vacuum sluice valves 7a, 7b are opened in the direction of arrows B and the substrates 5 already formed with films are replaced with unfinished substrates 5 with films and put in a cassette 4. Subsequently, the unfinished substrates 5 with films are mounted on the tubular holders 11a, 11b and then the vacuum sluice valves 7a, 7b are closed in the direction of arrows B' so as to form the films.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a plasma CVD apparatus, and particularly to a nine plasma CVD apparatus which enables highly efficient film formation.

Conventionally, commonly used plasma CVD apparatuses often employ a so-called parallel plate system in which electrode structures are arranged to face each other. In this parallel method, the electrode surface area is about 7011! Good film thickness can only be obtained with wrinkles, and for this reason, larger equipment is required to deposit a film on a large number of substrates9. There are problems such as the installation space required.

9, this parallel plate method allows the products due to CvD to be processed s1
It is generated all over the inside of the tank and adheres to unnecessary parts other than the substrate, becoming a source of O contamination in the processing tank.

Furthermore, sputtering equipment with an improved electrode arrangement structure has been proposed for the purpose of making the equipment more compact, lowering the cost, and improving the quality of film formation, but this has not yet been achieved in CVD equipment.

Therefore, the present invention has been made in view of the above-mentioned problems, and its purpose is to continuously manufacture a large number of substrates with high quality using an inexpensive AT without increasing the size of the device. Another object of the present invention is to provide a plasma CVD apparatus that is capable of forming layers with high efficiency.

Ii below! Embodiments of the present invention will be described in detail using figures.

The iWA is a main part WIE image configuration diagram showing an example of the plasma CVD apparatus according to the present invention. In the same figure, a vacuum door 1 is installed at one end so that it can be opened and closed in the direction of the arrow MK.
1 and connected to a pulp 3 having a cock 3 on its lower end face for switching the interior to a vacuum state or an atmospheric pressure state, 4 is disposed within this vacuum provision 113 and is unfinished. This is a cassette for arranging and storing films and substrates 5 on which films have been formed so that they can be inserted and taken out freely.
The cassette 4 containing the substrates 5 is placed in the vacuum door 1at-
The interior is kept in a vacuum atmosphere except when it is opened and taken out to the outside. @h, @b is the vacuum preparation 14i11 above.
A vacuum partition provided at the boundary between the valves 1h and 20 which can be freely opened and closed in the direction of arrow B-1' and adjacent to each other independently and heated to a predetermined temperature from the outside via valves 1h and Tb. P9
The VD processing slide 6a is stored in the cassette 4 in the vacuum preparation m1ll (by opening and closing operation) and also has the function of inserting and ejecting unformed and film-formed substrates S into each other. ing. a a * @ b Fi 1st. Second
0 goods ma
tp, 10a*1Gk is each plasma CVD treatment @a,
A rod-shaped electrode placed electrically insulated in the center of @b,
11m and 111+ have holding parts 12a and 12k for holding the substrate 5 facing the magnetic poles 10m and 10k in each plasma CVD treated cypress (61) as shown in the 1-1' cross-sectional view in FIG. The circular cylindrical holders 13&, 13b are cylindrical holders 111. and 13b, which also serve as counter electrodes, respectively, and are disposed inside jlkH. llb in the direction of arrow C, rotational speed and pitch feed], 14m, 14 + indicates cylindrical holder 11a * 11b and rotational drive body 13m,
13b, respectively.

In the nine plasma CVD apparatus constructed in this manner, first, a large number of unformed substrates are stored in the cassette 4 and inserted into a predetermined position in the vacuum preparation iN1, and the door 1a is closed in the direction of the arrow M. Then, the vacuum partition multiple valve 7a and Tie are opened in the direction of the arrow, and the undeposited substrate 5 housed in the cassette 4 is placed on the inner wall surface of each plasma CVD processing tank @*, @bPiO cylindrical holder 111.10. The vacuum partition valves 7h and 7b are closed in the direction of arrow B' by attaching them to the nine substrate holding parts 12m and 12b, respectively. Next, vacuum preparation room 1
and each plasma 0■ treatment 41111S'a, l1ls
After maintaining the inside in a vacuum state of Wr, the cylindrical holder 11
* * 11b is rotated in the direction of arrow C by rotary drive bodies 13m and 13b, respectively, and a large number of substrates 5 are formed on the cylindrical holders 11m and 11 with electrodes 10 on the inner surfaces and arranged opposite to 10b. Make a film. Next, the cylindrical holders 11m and 11bO
At the same time as stopping the rotation, the vacuum partitions 7* and 7b are opened in the direction of arrow B, and the substrate 5 on which the film has been formed is replaced with the substrate 5 on which the film has not been formed in the cassette 4. In this case, to completely replace the substrate 5 on which the film has not been formed and the substrate 4f5 on which the film has been formed, the cylindrical holder 11a, In is pitch-fed in the direction of arrow C, and the cylindrical holder 11a, In is transferred to the vacuum partition multi-valve 7m, 7. This is done by aligning the central axes of the substrate holders 11a and llb with the substrate holding parts 12m and 12.

Next, after mounting the unformed Ho substrate S on the cylindrical holders 11m and 11b, the vacuum partition valves 7m and 7b are moved by arrow t! Closed in the IB' direction, film formation is performed in the same process as described above. On the other hand, the cassette 4 containing the substrate 5 on which the film has been formed is vacuum prepared ii.
After returning the inside of the substrate 1 to atmospheric pressure (using an inert gas), the door 1a is opened in the direction of arrow A' to take it out, replace it with the substrate 5 on which no film has been formed, and repeat the same process as described above. Note that the film forming process is 2
The base plasma cvD@@Hinoki@* and Tab may be performed simultaneously or alternately. In addition, the cylindrical holding body 1
1 &, 1ull electrode I Qa placed in the center,
1oh may be cylindrical or polygonal, and the cylindrical holders 11a and 11b may also be polygonal or cylindrical to obtain the same effect as described above.

According to such a configuration, the plasma CVD process fIAW1
6 A rod-shaped electrode l Oa * in the center of a e @ b
10 k, and this rod-shaped electrode I Qa * 1 G
By setting the polygonal cylindrical holder 111, 101 having the substrate holder 12&, 12b opposite to k+,
Nine substrates 50 are mounted on the substrate holder 128.12k.
Since the configuration makes effective use of the peripheral area, plasma C
The products generated in the VD treatment @@a tii b are effectively formed into a film on the substrate 5, and contamination in the plasma CV treatment baths h and @b is extremely reduced.

As explained above, the plasma CVD apparatus according to the present invention has an extremely advantageous feature in that it can continuously form films on a large number of substrates with high quality and high efficiency using an inexpensive apparatus without increasing the size of the apparatus. You can get the same effect.

[Brief explanation of the drawing]

FIG. 1 is a cross-sectional configuration diagram of essential parts showing an example of a plasma CVD apparatus according to the present invention, and FIG. 2 is a sectional view of a cylindrical holding part shown in FIG.
-1' sectional view. 1...Vacuum preparation room, 11...Vacuum door, 2...
・Cook, 3...O valve, 4...fist cassette, 5
@...Substrate, @*, @b...Plasma CVD processing tank, 7m, 7bs...Vacuum partition) valve, 9a, Fib...
...Pulp, 9 fields, 9b... Book ears, 10m,
10bs 11611 rod electrode, 11m. 11b...Long cylindrical holding body, 12m, 12b...Holding part, 13m, 1311''''' Rotating drive body, 1
4m, 14b...rotation axis.

Claims (1)

[Claims] There are nine vacuum preparation chambers in which unformed and film-formed substrates are accommodated and exchanged from the outside through a vacuum door, and nine plurality of plasma CVD processes provided adjacent to the vacuum preparation chamber and independently from each other. a vacuum partition valve that partitions the vacuum preparation chamber and each of the plurality of PRADAR CVD processing tanks, and is housed in the vacuum preparation chamber and allows unformed and film-formed substrates to be inserted into and taken out from each other; a rod-shaped electrode fixedly and electrically insulated in the center of each of the plurality of plasma CVD processing tanks; and a peripheral part arranged in each of the plurality of plasma CVD processing tanks and facing the rod-shaped electrode. 1. A plasma CVD apparatus comprising: a cylindrical holder for holding a large number of substrates; and a rotary drive body for rotating and pitch-feeding the cylindrical holder in a circumferential direction.