JPS58176195A - 浮遊帯域溶融法による結晶製造方法 - Google Patents
浮遊帯域溶融法による結晶製造方法Info
- Publication number
- JPS58176195A JPS58176195A JP5702882A JP5702882A JPS58176195A JP S58176195 A JPS58176195 A JP S58176195A JP 5702882 A JP5702882 A JP 5702882A JP 5702882 A JP5702882 A JP 5702882A JP S58176195 A JPS58176195 A JP S58176195A
- Authority
- JP
- Japan
- Prior art keywords
- crystal rod
- concentrator
- crystal
- induction heating
- melting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims abstract description 17
- 238000004857 zone melting Methods 0.000 title claims description 6
- 238000002844 melting Methods 0.000 claims abstract description 8
- 230000008018 melting Effects 0.000 claims abstract description 8
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 abstract description 19
- 230000006698 induction Effects 0.000 abstract description 19
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 241000255789 Bombyx mori Species 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000007500 overflow downdraw method Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Induction Heating (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5702882A JPS58176195A (ja) | 1982-04-06 | 1982-04-06 | 浮遊帯域溶融法による結晶製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5702882A JPS58176195A (ja) | 1982-04-06 | 1982-04-06 | 浮遊帯域溶融法による結晶製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58176195A true JPS58176195A (ja) | 1983-10-15 |
| JPS6362480B2 JPS6362480B2 (enrdf_load_stackoverflow) | 1988-12-02 |
Family
ID=13043973
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5702882A Granted JPS58176195A (ja) | 1982-04-06 | 1982-04-06 | 浮遊帯域溶融法による結晶製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58176195A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006169060A (ja) * | 2004-12-17 | 2006-06-29 | Shin Etsu Handotai Co Ltd | 単結晶製造装置及び単結晶製造方法 |
| JP2012126593A (ja) * | 2010-12-14 | 2012-07-05 | Shin Etsu Handotai Co Ltd | 半導体単結晶製造装置及び半導体単結晶の製造方法 |
-
1982
- 1982-04-06 JP JP5702882A patent/JPS58176195A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006169060A (ja) * | 2004-12-17 | 2006-06-29 | Shin Etsu Handotai Co Ltd | 単結晶製造装置及び単結晶製造方法 |
| JP2012126593A (ja) * | 2010-12-14 | 2012-07-05 | Shin Etsu Handotai Co Ltd | 半導体単結晶製造装置及び半導体単結晶の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6362480B2 (enrdf_load_stackoverflow) | 1988-12-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3099534A (en) | Method for production of high-purity semiconductor materials for electrical purposes | |
| US20220106703A1 (en) | Semiconductor crystal growth device | |
| JP3841863B2 (ja) | シリコン単結晶の引き上げ方法 | |
| CN109338462A (zh) | 一种直拉单晶用变径籽晶及引晶方法 | |
| CN103060891B (zh) | 小梯度温场上升定向生长氟化物单晶的装置及方法 | |
| JPS58176195A (ja) | 浮遊帯域溶融法による結晶製造方法 | |
| JPH0212920B2 (enrdf_load_stackoverflow) | ||
| CN102206855A (zh) | 直拉单晶炉石墨坩埚 | |
| JP5126267B2 (ja) | シリコン単結晶の製造方法およびシリコン単結晶製造装置 | |
| CN201627000U (zh) | 一种直拉法制备单晶硅所使用的硅籽晶 | |
| US5730799A (en) | Device for producing single crystals | |
| CN201634795U (zh) | 直拉单晶炉石墨坩埚 | |
| JPS5930792A (ja) | 単結晶育成装置 | |
| WO2019142493A1 (ja) | 単結晶製造用黒鉛ヒーター及び単結晶引き上げ装置 | |
| CN208901908U (zh) | 一种用于直拉炉的水冷设备 | |
| WO2024164911A1 (zh) | 磁控线圈及晶体制造设备 | |
| CN210438862U (zh) | 一种直拉单晶用变径籽晶 | |
| CN85100591A (zh) | 非线性磁场中单晶硅拉制方法及其装置 | |
| JPH05221786A (ja) | シリコン単結晶製造装置および製造方法 | |
| EP1201795B1 (en) | Semiconductor single crystal pulling apparatus | |
| US5683505A (en) | Process for producing single crystals | |
| JPS63291888A (ja) | 半導体単結晶製造装置 | |
| US3950479A (en) | Method of producing hollow semiconductor bodies | |
| US4849065A (en) | Crystal growing method | |
| CN220952185U (zh) | 一种单晶炉用液冷结构及单晶炉 |