JPS58176178A - Ceramic composition - Google Patents
Ceramic compositionInfo
- Publication number
- JPS58176178A JPS58176178A JP57058566A JP5856682A JPS58176178A JP S58176178 A JPS58176178 A JP S58176178A JP 57058566 A JP57058566 A JP 57058566A JP 5856682 A JP5856682 A JP 5856682A JP S58176178 A JPS58176178 A JP S58176178A
- Authority
- JP
- Japan
- Prior art keywords
- composition
- porcelain
- lead
- temperature
- low
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Ceramic Capacitors (AREA)
- Inorganic Insulating Materials (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
本発明は、磁器組成物、特に1050℃以下の低板で焼
結でき、lI電電率^<、*温および高温における絶縁
抵抗が高<、シかも機械的強度の^い磁器組成物に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION The present invention provides porcelain compositions that can be sintered at low temperatures, particularly at temperatures below 1050°C, that have high electrical conductivity, high insulation resistance at high temperatures and high temperatures, and low mechanical strength. It concerns a porcelain composition.
従来、■電体磁器組成物として、チタン酸バリクA (
BaTiOs)を主成分とするm器が広く実用化されて
いることは周知のとおりである。しかしながらチタン酸
バリウム(BaTiOm)を主成分とするものは、焼結
温度が通常1300〜1400’Cの高温である。Conventionally, as an electric porcelain composition, Balik titanate A (
It is well known that m-devices containing BaTiOs as a main component have been widely put into practical use. However, those whose main component is barium titanate (BaTiOm) have a high sintering temperature of usually 1300 to 1400'C.
このため、これを積層形コ/デンナに利用する場合には
内部電極としてこの焼結温度に耐え得る材料1例えば白
金、パラジウムなどの高価な貴金属を使用しなげればな
らず、製造コスFが高くつくという欠点がある。積層形
コンデンサを安く作るためkは銀、ニッケルなどを主成
分とする安価な金属が内部電極Km用できるような、で
きるだけ低温、特K 1010’C以下で焼結できる磁
器が必要である。Therefore, when this is used in a laminated co/denna, a material that can withstand this sintering temperature must be used as an internal electrode, such as an expensive noble metal such as platinum or palladium, which increases the manufacturing cost F. The drawback is that it is expensive. In order to manufacture multilayer capacitors at low cost, it is necessary to use porcelain that can be sintered at as low a temperature as possible, especially at K 1010'C or less, so that the internal electrodes Km can be made of inexpensive metals mainly composed of silver, nickel, etc.
また、磁器組成物の電気的特性として、誘電率が高く、
−電損失が小さく、絶縁抵抗が高いことが基本的に要求
される。さらに絶縁抵抗の値に圓しては、^信頼性の部
品を要求する米国防総省の規格であるミリタリ−・スペ
シフイケーシ1ノ(Military Sp@cifi
catiot+ )のMIL−C−55681Bにおい
て、室温における値のみならず、125℃における値も
定められているように、信頼性の^い磁器コンデンサを
得るためには、室温におげろ値のみならず、最高使用温
度における絶縁抵抗も高い値をとることが必要である。In addition, the electrical properties of the porcelain composition include a high dielectric constant,
-Basically required is low electrical loss and high insulation resistance. Furthermore, regarding the value of insulation resistance, the US Department of Defense standard that requires reliable parts is Military Specified Case 1 (Military Sp@cifi).
In MIL-C-55681B of CATIOTO+), not only the value at room temperature but also the value at 125°C is specified. , insulation resistance at the maximum operating temperature must also be high.
また、積層形チップコンデンサの場合は、チップコンデ
ンサを基板に実数したとき、基板とチップコンデンサを
構成している磁器との熱膨張係数の違いKより、チップ
コンデンtK機械的な歪みが加わり、チップコンデンサ
にクラックが発生したり、破損したりすることがある。In addition, in the case of a multilayer chip capacitor, when a real number of chip capacitors are placed on a board, mechanical distortion is added to the chip capacitor tK due to the difference in thermal expansion coefficient K between the board and the porcelain that makes up the chip capacitor. The capacitor may crack or be damaged.
また、エポキシ樹脂等を外装したディッグコンデンナの
場合も外装**の応力でゲイップコンデンtKタラツク
が発生する場合がある。いずれの場合−、コンデンサな
構成している磁器の機械的強度が低いほどタラツタが入
りやすく、容易に破損するため、信頼性が低くなる。し
たがって、磁器の機械的強度をできるだけ増大させるこ
とは実用上極めて重要なことである。Furthermore, even in the case of a dig condenser coated with epoxy resin or the like, gap condenser tK tack may occur due to the stress of the coat. In either case, the lower the mechanical strength of the porcelain constituting the capacitor, the more likely it is to get stuck in and break, resulting in lower reliability. Therefore, it is of practical importance to increase the mechanical strength of porcelain as much as possible.
ところで、Pb(MI庸)偽−PliTiOs 系磁器
組成物においてはR?lCエヌ・エヌeクライニク、エ
イフイ拳アグラノ7スカヤ)i、 N、 Kraiml
k andム、■。By the way, R? I, N, Kraiml
k and m, ■.
Qraatvmksp (Fitike 勤r4ege
’r*1a、 Tel 、2. A 1. pp。Qraatvmksp (Fitike duty r4ege
'r*1a, Tel, 2. A1. pp.
和〜n、J錦マara 1%O)より提案があり、また
(8rx Pb□、TkOa )5 (PbIMI0W
ts On ) h(ただしg=o〜aio 、 @
ハ(135〜Q、5. k 410. S 〜(L66
であり、モして6÷b=13について、モノリシックコ
ンデンナおよびその製造方法として41Ws@S2噌1
662号公報に開示され、また霞電体験末組成物として
特−@ 52−411111号会報Ell示されている
。There was a proposal from W ~ n, J Nishikima ara 1%O), and (8rx Pb□, TkOa) 5 (PbIMI0W
ts On) h (however, g=o~aio, @
Ha (135 ~ Q, 5. k 410. S ~ (L66
So, for 6÷b=13, 41Ws@S2 1 is a monolithic condenser and its manufacturing method.
It is disclosed in Japanese Patent Application No. 662, and is also disclosed in Special Issue No. 52-411111 as a Kasumiden experience powder composition.
しかしながら、いずれも比抵抗に関する開示は全くされ
ておらず、これらの磁S組成物の実用性は明らかでなか
った。また、本発明者達はRK910−1150℃の温
度で焼結でき、Pb(MyMW%)へとPbTi0m二
成分系からなり、これを(Pb(M#庭に)On )
s [PbT i Os )1−z と表わしたときに
Sがα65(z≦1.00の範囲にある組成物を提案し
ている。この組成物は誘電率と比抵抗の積が高く、誘電
損失の小さい優れた電気的特性を有している。しかしな
がら、上記組成物はいずれも機械的強度が低いため、そ
の用途は自ら狭い範囲に限定せざるを得なかった。However, none of them discloses the specific resistance at all, and the practicality of these magnetic S compositions was not clear. In addition, the present inventors can sinter at a temperature of RK910-1150 °C and consist of a binary system of Pb(MyMW%) and PbTi0m, which can be sintered at a temperature of RK910-1150°C, which can be converted into (Pb(M#)On).
We propose a composition in which S is in the range of α65 (z≦1.00) when expressed as s [PbT i Os )1-z. This composition has a high product of dielectric constant and specific resistance, and It has excellent electrical properties with low loss.However, all of the above compositions have low mechanical strength, so their applications have been forced to be limited to a narrow range.
また、PboIiI%W3A)Os−PbTiOs系を
含む三成分系については、特開昭55−111011号
においてFb(M#MWM)01 Pk+Ti0m
Pb(M#MNbX)On系が、特Ill@ 51i
−117809号においてPb(今店)0.−PbTi
O烏−3%(M#MTILに)On系がそれぞれ開示さ
れている。しかしながら、いずれも比抵抗や機械的強度
に@する開示は全くされ【おらず、これらの磁器組成物
の実用性は明らかでなかりた。Furthermore, regarding a ternary system including the PboIiI%W3A)Os-PbTiOs system, Fb(M#MWM)01 Pk+Ti0m
Pb(M#MNbX)On system is specially Ill@51i
-117809 Pb (Ima store) 0. -PbTi
Okarasu-3% (M#MTIL) On series are disclosed, respectively. However, none of them discloses specific resistance or mechanical strength, and the practicality of these ceramic compositions was not clear.
また、本発明者達はRKi%(k11庭に)0襲−Pb
T1偽−P b (Nt3fNkに)Oa三成分組成物
を提案している。In addition, the inventors have determined that RKi% (in k11 garden) 0 attack-Pb
A T1 pseudo-P b (to Nt3fNk) Oa ternary composition is proposed.
こO組成物は、900〜1050℃の低温領域で焼結で
き、誘電率が高く、鐸電損失が小さく、室温および高温
における絶縁抵抗の値が高い優れた特性を有している。This O composition can be sintered in the low temperature range of 900 to 1050°C, has excellent properties such as high dielectric constant, low electrical loss, and high insulation resistance values at room temperature and high temperature.
しかしながら、との組成物は機械的強度が低いため、そ
の用途は自ら狭い範囲に限定せざるt得なかった。However, due to the low mechanical strength of the composition, its use had to be limited to a narrow range.
本発明は以上の点にかんがみ、900〜1050℃の低
温領域で焼結でき、誘電率が高く、篩電損失が小さく、
室温および高温における絶縁抵抗の値が高い優れた電気
的特性を有し、更に機械的強度も大きい信頼性の高い磁
器組成物を提供しようとするものであり、マグネシウム
・タングステン酸鉛(Pb (My)fW%)Os )
pチタン酸鉛(PbTiOm)および二yケル・ニオ
ブ酸鉛(Pb(Niに′Nbに)0[有]〕からなる3
威分組成物を(Pb Oa#輝%)Os ) z (P
bT iOs )y CPb (Ni%Nb%)へ〕1
と表わしたときに(ただし震+1十g、=X−OO)こ
の3威分龜威図において、以下の組成物
(s−0,@93 、 y=0.217 、
g=α01 )j(g=Q、495 、 y=o、
41s 、 g=ao1 )(g=0.19!
、 y=0.455 、 g−0,35)(5=
alO、y−0,40、g=O56)(g=006
、y=α24 、 g=α70 )(Pb(Mm3
48bX)Os )を主成分に対しテ0.05〜6mo
l−添加含有せしめてなることを特徴とするものである
。In view of the above points, the present invention can be sintered in a low temperature range of 900 to 1050°C, has a high dielectric constant, and has a low sieving loss.
The purpose is to provide a highly reliable porcelain composition that has excellent electrical properties such as high insulation resistance values at room temperature and high temperature, and also has high mechanical strength. )fW%)Os)
3 consisting of p-lead titanate (PbTiOm) and lead niobate (Pb (Ni to 'Nb) 0 [present]]
The luminous composition (Pb Oa#bright%)Os ) z (P
bT iOs )y CPb (Ni%Nb%)]1
(however, earthquake + 10 g, =
g=α01)j(g=Q, 495, y=o,
41s, g=ao1) (g=0.19!
, y=0.455, g-0,35) (5=
alO, y-0,40, g=O56) (g=006
, y=α24, g=α70)(Pb(Mm3
48b
It is characterized by containing l-addition.
以下、本発明を実施例により詳mK説明する。Hereinafter, the present invention will be explained in detail with reference to Examples.
出発原料として純度99.9−以上の酸化鉛(PbO)
。Lead oxide (PbO) with a purity of 99.9 or higher as a starting material
.
酸化マグネシウム(hILJO)、酸化タングステン(
%VOs) p酸化チタン(Tilt) 、酸化ニッケ
ル(NIO) 、11よび酸化ニオブ(NbsOi)*
酸化アンチモン(8bsOs>および縦酸マンガン(l
hcOl)な使用し、表に示した配合比となるように各
々秤量する。次に秤量した各材料をボールギル中で湿式
混合した後750〜$O■で予焼を行い、この粉末をボ
ール4ルで粉砕し、ロ別、乾燥後、有機バインダーを入
れ、整粒後プVスし、直径165wm、厚さ約2mの円
板14枚と、直径taint厚さ約IDwxの円柱を作
製した。Magnesium oxide (hILJO), tungsten oxide (
%VOs) pTitanium oxide (Tilt), nickel oxide (NIO), 11 and niobium oxide (NbsOi)*
Antimony oxide (8bsOs>) and manganese oxide (l
hcOl) and weigh each to achieve the blending ratio shown in the table. Next, the weighed materials were wet-mixed in a ball gill, then pre-baked at 750~$0.00. This powder was crushed with a 4-ball ball, divided into sieves, dried, and an organic binder was added. 14 disks each having a diameter of 165 wm and a thickness of approximately 2 m, and a cylinder having a diameter of 165 wm and a thickness of approximately IDwx were prepared using a V-shaped tube.
次に1本発明の組成範囲の試料は空気中帷ト10肛良の
温度で1時間焼結した。焼結した円板4枚の上下mに@
oo’cで銀電極を焼付け、ディジタルLCRメーター
フ周波数1 iQh 、電圧” Vr、&I。Next, a sample having a composition in the composition range of the present invention was sintered in air at a temperature of 10 mm for 1 hour. At the top and bottom m of four sintered disks @
Burn the silver electrode with oo'c, digital LCR meter frequency 1 iQh, voltage "Vr, &I.
温120℃で容量と誘電損失を測定し誘電率を算出した
。The capacitance and dielectric loss were measured at a temperature of 120° C., and the dielectric constant was calculated.
次に、超絶縁抵抗針で50Vの電圧を1分間印加して、
絶縁抵抗を温度加℃と125℃で測定し、比抵抗を算出
した。Next, apply a voltage of 50V for 1 minute with a super-insulated resistance needle,
Insulation resistance was measured at elevated temperatures and at 125°C, and specific resistance was calculated.
機械的性質な抗折強度で評価するため、焼結した円柱か
ら厚さQ、 S m 、 @ 2 wx を長さ約13
1oKの矩形板をw枚切り出した。支点間距離を9 x
s Icとり Pwl
二点法で破壊荷重hOめな測定し、y m7−;π−4
〕なる弐に従い、抗折強度τ〔勢−〕を求めた。ただし
lは支点間距離、tは試料の厚み2wは試料の幅である
。電気的特性は円板試料4点の平均値抗折強度は矩形板
試料W点の平均値より求めた。In order to evaluate the bending strength of mechanical properties, a sintered cylinder with a thickness Q, S m , @ 2 wx and a length of about 13
I cut out w pieces of 1oK rectangular board. The distance between the fulcrums is 9 x
s Ic taken Pwl Measure the breaking load hO by the two-point method, y m7-; π-4
], the bending strength τ [force-] was determined. However, l is the distance between the supporting points, t is the thickness of the sample, and 2w is the width of the sample. The electrical properties were determined from the average value of four disk samples.The bending strength was determined from the average value of point W of the rectangular plate sample.
こOよ5Kして得られた磁器の主成分
(PM−に)Os) 、 (pbttom ) 、 (
pb (Ntxx%)へ〕1の配金比雰、y、1および
副成分添加量と誘電率、誘電損失、20℃および12S
t Kおける比抵抗、および抗折強度の関係を次表に示
す。The main components of the porcelain (PM-Os), (pbttom), (
pb (Ntxx%)] 1 metal distribution ratio, y, 1 and the additive amount of subcomponents, dielectric constant, dielectric loss, 20°C and 12S
The relationship between specific resistance at t K and bending strength is shown in the following table.
表V−示した結果から嘴らかなよ5に、Pb−−W%)
01− PblTi0m Pki(NiMNk+X)O
s三成分胆威物に副成分として、 Pb(lh%81e
X)Onを添加含有せしめた本発明の範囲内のものは、
誘電率が2950〜12960と^く誘電損失が0.3
〜28−と小さく、比抵抗がztKmイテtx Xl0
L1.7 xICIsn−cxsトls< # t、カ
も12底 においても4. OX to’−:a、s
xlo’Ω”C1lという^い値を示し、さらに抗折強
度も98ト1410贅偏と実用上十分高い値を示す信頼
性の高い実用性の極めて^い磁器組成物であることがわ
かる。Table V - From the results shown, the beak 5%, Pb--W%)
01- PblTi0m Pki(NiMNk+X)O
Pb (lh%81e
Those within the scope of the present invention that contain X)On are:
The dielectric constant is 2950-12960 and the dielectric loss is 0.3.
It is as small as ~28-, and the specific resistance is ztKmitetxXl0
L1.7 xICIsn-cxstrls<#t, 4. OX to'-: a, s
It can be seen that this is a highly reliable and extremely practical porcelain composition that exhibits a high value of xlo'Ω''C1l, and also has a bending strength of 98 to 1410, which is a sufficiently high value for practical use.
こうした優れた特性を示す本発明の磁器は焼結温度が1
050℃以下の低温であるため、積層プンデンナの内部
電極の低価格化を実現tきると共に、省エネルギーや炉
材の節約に4なるとい5極めて優れた効果も生じる。The porcelain of the present invention exhibiting these excellent properties has a sintering temperature of 1
Since the temperature is low, below 0.050°C, it is possible to reduce the cost of the internal electrodes of the laminated pundenna, and it also has extremely excellent effects such as saving energy and saving furnace materials.
なお、本発明の主成分組成物を(pb情−貰にMls)
g(PbTl偽) y (PMNiに鳩に)Os3gと
表わしたときk(ただし# s+y十廖=1.00)、
その組成は3成分組成図におげろ点
(s=0.693 、 y=Q、2117 、
g==co、ol )(x=o、49s 、y;
a4Gs 、g=ao1 )(gxQ、11s
、y=α40 、$=035 )(g=alo
、y=040 、g=050 )(1gwαO@
、yx(124、!=α7G )を結ぶ線上およ
びこのs点に囲まれる組成範HK限定され、111成分
の添加含有量は主成分に対して(LO5〜6鳳・1%E
ll定される。主成分組成範囲、を表わす3成分m成1
1Kkいて、組成点2,6および組成点17.19を結
ぶ線の外側では、高温におげろ比抵抗が小さくなり、実
用的でない。組成点@、13,17を結ぶ線の外側では
+1リ一点が実用範囲より蟲温伺に大きくずれるた゛め
、#I誘電率小さくなり1組成点鶴、2を結ぶ纏の外側
では、キ。In addition, the main component composition of the present invention (PB information-Mls)
g (PbTl false) y (PMNi to pigeon) When expressed as Os3g, k (however, # s + y ten liao = 1.00),
Its composition is shown at the bottom point (s=0.693, y=Q, 2117,
g = = co, ol ) (x = o, 49s, y;
a4Gs, g=ao1) (gxQ, 11s
, y=α40, $=035) (g=alo
, y=040, g=050 ) (1gwαO@
, yx (124,!=α7G) and the composition range surrounded by this point s is limited to the composition range HK, and the added content of the 111 component is (LO5-6 Otori・1% E
ll determined. 3 components representing the main component composition range 1
1 Kk, and outside the line connecting composition points 2 and 6 and composition point 17.19, the specific resistance becomes small at high temperatures, making it impractical. Outside the line connecting the composition points @, 13, and 17, the +1 point deviates significantly from the practical range, so #I dielectric constant becomes smaller, and outside the line connecting the composition points 1 and 2, it becomes KI.
リ一点が実用範四より低温側に大きくずれるため卿電事
が小さくなり、実用的でない。Since the point deviates significantly to the lower temperature side than the practical range, the electrical power becomes small, making it impractical.
また、副成分であるPb(&にsbに)Osの添加量が
0、Oram・19A未満では抗折強度の改善効Ikf
小さく、・ml−を超えると逆に抗折強度が小さくなる
ため実用的でない。In addition, when the amount of Pb (&sb) Os added as a subcomponent is 0 and less than Oram 19A, the improvement effect of bending strength Ikf
If it exceeds .ml-, the bending strength will decrease, which is not practical.
なお、liK本発本分の主成分組成範囲を示す。図に示
した番号は、表に示した主成分配合比の番号に対応する
。In addition, the main component composition range of the main component of liK is shown. The numbers shown in the figure correspond to the numbers of the main component blending ratios shown in the table.
図は、不発明の主成分組成範曲と夷−例に示した組成点
を示す図である。
Pb(A/iたNb軛)03
Pb(M13hWq)0. P
bTt’O。
手続補正書(峠)
特許庁長官 殿
1、事件の表示 昭和57年 籍 許 願第osg
sss号2、発明の名称 磁 ms 組 成 愉
3、補正をする者
事件との関係 出 願 人東京都港区芝五
J”目33番1号
(423) 日本電気株式会社
代表者 関本忠弘
4、代理人
〒108 東京都港区芝五■−目37番8号 住友三
田ビル5、補正の対象
明細書の発明の詳細な説明の欄
6 補正の内容
明細書第4貞第14行目に「a −’= b Jとある
のを「a+bJと補正する、
代理人弁理士内原 ¥!f13The figure is a diagram showing the principal component composition range of the invention and the composition points shown in the example. Pb (A/i Nb yoke) 03 Pb (M13hWq) 0. P
bTt'O. Procedural Amendment (Toge) Director General of the Patent Office 1, Indication of the Case 1981 Application No. osg
SSS No. 2, Name of the invention Magnetic MS Composition 3, Relationship with the amended case Applicant No. 33-1 (423) Shiba Go, Minato-ku, Tokyo NEC Corporation Representative Tadahiro Sekimoto 4 , Agent Address: 5, Sumitomo Sanda Building, 37-8 Shibago, Minato-ku, Tokyo 108, Detailed explanation of the invention in the specification subject to amendment 6 Contents of the amendment Line 14 of the 4th page of the specification "a -' = b J" is corrected to "a + b J," Patent Attorney Uchihara ¥!f13
Claims (1)
On) pチタン酸鉛(PbTiO,)およびニッケル
・ニオブ酸鉛(Pb(NhNb%)Os)l・らなる3
成分組成物を(Pb (鳩市W%)Os) z (Pb
T i Os ) y (Pb (N hNk+X )
On) gと表わしたときに、(ただしg+y+g−1
,00)この3成分艦成図において、以下の組成点 (sneOJI3 、 y=(L217 、
g=ao1 )(&+冨α495 、 jeQ、
411!s 、 g=(LOI )(gmo、1
11! 、 y=t(k、451! 、 s=
α35 )($=*o、10 、 j=0.40
、 gz(LSO)(sxooe # y=a
z4 、g=ayo )を結ぶ鎗上およびこ05点K
llまれる組威範sVcある主成分組成物に副成分とし
てマンガン−アン+そy酸鉛(PM&JalsX)On
)を主成分に対し テQ、01S〜@M1alIs添加
含有甘しめてなることを骨黴とする磁器組成物。[Claims] Magnesium lead tungstate (Pb (MyMWM)
On) P lead titanate (PbTiO, ) and nickel lead niobate (Pb (NhNb%)Os) 3
The component composition is (Pb (Hatoichi W%)Os) z (Pb
T i Os ) y (Pb (N hNk+X )
On) When expressed as g, (however, g+y+g-1
,00) In this ternary component diagram, the following composition points (sneOJI3, y=(L217,
g=ao1)(&+trimα495, jeQ,
411! s, g=(LOI)(gmo, 1
11! , y=t(k, 451!, s=
α35) ($=*o, 10, j=0.40
, gz(LSO)(sxooe # y=a
z4, g=ayo)
Manganese-an + lead soyate (PM & Jals
) as a main component, and the addition of TEQ, 01S to @M1alIs to make the bone mold a porcelain composition.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57058566A JPS58176178A (en) | 1982-04-08 | 1982-04-08 | Ceramic composition |
US06/475,538 US4450240A (en) | 1982-03-17 | 1983-03-15 | Ceramic compositions having high dielectric constant and high specific resistivity |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57058566A JPS58176178A (en) | 1982-04-08 | 1982-04-08 | Ceramic composition |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58176178A true JPS58176178A (en) | 1983-10-15 |
JPS6224383B2 JPS6224383B2 (en) | 1987-05-28 |
Family
ID=13087991
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57058566A Granted JPS58176178A (en) | 1982-03-17 | 1982-04-08 | Ceramic composition |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58176178A (en) |
-
1982
- 1982-04-08 JP JP57058566A patent/JPS58176178A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6224383B2 (en) | 1987-05-28 |
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