JPS58174955A - Manufacture of electrophotographic receptor - Google Patents
Manufacture of electrophotographic receptorInfo
- Publication number
- JPS58174955A JPS58174955A JP5872882A JP5872882A JPS58174955A JP S58174955 A JPS58174955 A JP S58174955A JP 5872882 A JP5872882 A JP 5872882A JP 5872882 A JP5872882 A JP 5872882A JP S58174955 A JPS58174955 A JP S58174955A
- Authority
- JP
- Japan
- Prior art keywords
- vapor
- layer
- substrate
- deposited
- temp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photoreceptors In Electrophotography (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
びりIJ Wング性の良好な光導電層を拘する電子写
真用感光体の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for producing an electrophotographic photoreceptor that provides a photoconductive layer with good vibration resistance.
電子写真用感光体は、光導電層表面の帝嵯、旙光工程に
よる画像形成後の現像、転写工程による画像形成に使用
される。この一連の工程終了後なお光導電層に残ってい
る電荷を除去する工程と、光導電層表面上に1111g
N形成に供されないで残留するトナーを除去するクリー
ニング工程が含まれ札りリ=ング性の良否(ま次の1蜜
形成の際−こ制品質の画像が得られるかどうかを左右す
るので、クリーニング性のすぐれた光導電層が要求され
る。The electrophotographic photoreceptor is used for forming an image on the surface of a photoconductive layer by a diaphragm process and a shaguang process, followed by a development process and a transfer process. After completing this series of steps, there is a step of removing the charges remaining on the photoconductive layer, and a step of removing the charge remaining on the photoconductive layer.
A cleaning process is included to remove residual toner that has not been subjected to N formation, and the quality of printing properties (during the next formation, this affects whether or not a quality image can be obtained). A photoconductive layer with excellent cleanability is required.
従来の電子写真用感光体では、画像形成特性あるいは1
g禎性等の点から光導電I一表面は平滑でなければなら
ないとされ、光沢を有する鏡面としで形成されていた。Conventional electrophotographic photoreceptors have poor image forming properties or
The surface of photoconductive I was required to be smooth from the viewpoint of stability, and was formed with a glossy mirror surface.
しかしこのような光導電層は転写紙あるいはトナーとの
付着力が大きく、転写性、転写紙の分離性、トナーのク
リー二/グ性等が損われる欠点がめった。このため残留
トナー除去のために尤導′嵯層表面に過度の力をかける
機械的トナー除去装置が使用され、その結果光導電J一
衣表面損傷するなど感光体の寿命を低下させ、llki
誓低下全低下一因となっていた。最近、このような欠点
(こ対し光4唾!一の表面を適度に粗くする方が有効で
あることがわかってきた。However, such a photoconductive layer has a large adhesion force to the transfer paper or toner, and often has the disadvantage that transferability, separation of the transfer paper, cleaning/cleaning properties of the toner, etc. are impaired. For this reason, mechanical toner removal devices that apply excessive force to the surface of the conductive layer are used to remove residual toner, resulting in damage to the surface of the photoconductive layer, shortening the life of the photoreceptor, and reducing the lifetime of the photoreceptor.
This was a contributing factor to the overall decline in vows. Recently, it has been found that it is more effective to make the surface of the optical fiber moderately rough in order to overcome these drawbacks.
本発明はこのような適度の粗面を有する光導電増を備え
た電子写真用感光体を容易lこ製造することができる方
法を提供することを目的とする。An object of the present invention is to provide a method for easily manufacturing an electrophotographic photoreceptor having a photoconductivity increaser having a moderately rough surface.
この目的は、セレン系材料をその材料のガラス転移温度
付近より上の温ftこ保持した導電性基体上に蒸着し、
次いでその基体を25〜130℃に保持してセレノ−ひ
素合金を蒸着することによって達成される。The purpose is to deposit a selenium-based material onto a conductive substrate maintained at a temperature above about the glass transition temperature of the material;
This is then accomplished by depositing the seleno-arsenic alloy while holding the substrate at 25-130°C.
一般にセレンあるいはセレン合金はガラス転移温!f(
Tg)付近で粘性率が急メし、流勧牛が変動する。′f
なわち、’rg付近より上のaKでは流動性が増大し、
それより丁では流動性が低減する。従って県72#4法
により感光体の光導電層をセレン糸材料で形成する際の
基体温tIjLlこより流動性が変動し、温度がある5
ii度低くなると基体六回の性状に影響されずに族N+
−表面に微細な凹凸を付与することができることが分か
った。しかし従来の感光体のセレン糸元導電層としで憂
く用いられるセレーテルル合金はTgが低く、低mf基
体上への蒸着によって粗面を形成しても、感光体として
便用中の温度上昇により流動して表面が平滑(こなって
しまう。これを避けるため本発明では表III]lI4
1Iのノーを■゛gの高い5eAs合金により形成する
。しかし基体上に直接低温蒸着ノーを被着すると基体と
の付層性が充分でないので、基体上lこはセレン糸材料
の蒸着層をそのガラス転移温度以上で形成ム平滑な表面
を形成したのち低温で5e−As合金の表:ITI’峠
を形成する。このことにより、低温蒸着層のみよりなる
光導1!cf@ lこおいて交流除電時に表面が負lこ
帯電する現象も避けるこ♂ができた。In general, selenium or selenium alloys have a glass transition temperature! f(
The viscosity suddenly increases near Tg), and the flow rate fluctuates. 'f
That is, at aK above around 'rg, the fluidity increases,
In comparison, the fluidity is reduced. Therefore, when forming the photoconductive layer of a photoreceptor using selenium thread material using the Prefecture 72 #4 method, the fluidity varies due to the base temperature tIjLl, and the temperature is 5.
When the ii degree decreases, the group N+ is unaffected by the properties of the substrate
- It was found that fine irregularities can be imparted to the surface. However, the seletellurium alloy used as the selenium thread base conductive layer of conventional photoreceptors has a low Tg, and even if a rough surface is formed by vapor deposition on a low mf substrate, the temperature rise during use as a photoreceptor The surface becomes smooth due to flow. In order to avoid this, in the present invention, Table III] lI4
1I is made of a 5eAs alloy with high g. However, if a low-temperature vapor-deposited layer is applied directly onto the substrate, the adhesion to the substrate is insufficient, so a vapor-deposited layer of selenium thread material is formed on the substrate at a temperature above its glass transition temperature to form a smooth surface. 5e-As alloy surface: ITI' pass is formed at low temperature. This results in a light guide 1 consisting only of low-temperature deposited layers! With cf@l, it was also possible to avoid the phenomenon in which the surface becomes negatively charged during AC neutralization.
1ソ下図を引用して本発明の実施例について説明す7′
、。第1同薔こEいて4電性交付体1の上に5e−As
合金の高@A蒸肩層2、低温蒸着層3が&層されている
。支持体1は円筒状、シート状等のものが使用さね、−
面に導(処理をしたボリカーボネ〜ト、ポリr4化ビニ
ール、ポリエチレン、ガラスなどのe縁体も便用できる
。導電材料としては、例えばアルミニウム、鉄、@ya
’どの金禰あるいは@金が使用される。蒸着ノー2は支
持体1と障壁ノーを介しC被着されてもよい。障壁層は
、例えばAl六而面酸化処理などで行われる。支持体1
の表面が図示のようIこ粗面であっても、蒸着層2はガ
ラス転移渦層以上の180〜300℃、例えば200〜
2 s O’0o)yibKrこ加熱された支持体1の
上lこ流動性の大きい状態で設けられるので、支持体I
Q)表面性状ζこ左右されずに平滑な表面をイする。こ
の蒸着j−2が被着した支持体lを25〜1;30°C
例えば100℃lこ保持して同様に5e−As合金を蒸
着し、表面側の蒸着層3を形成すると、流動性が低いた
め−こ表4に島状あるいは粒状部が形成され、所1の表
面粗度が付与される。付与される表面の凹凸としてはU
、 1〜2μmの範囲が使用でき、特に02〜1μIn
の範囲が望ましく、表面方向では凹凸の寸法が使用トナ
ーの粒径より小さいことが1ましい。これより凹凸が大
きい場合はスポット状の帯電むら゛が生じ、画像上の欠
陥の原因、となる。7' Embodiments of the present invention will be explained with reference to the figure below.
,. 5e-As on the 4th electric sexual intercourse body 1
A high @A vaporized shoulder layer 2 and a low temperature vaporized layer 3 of alloy are layered. The support 1 is cylindrical, sheet-shaped, etc.
E-edge materials such as polycarbonate, polyvinyl chloride, polyethylene, and glass that have been treated with conductivity can also be used.As conductive materials, for example, aluminum, iron, @ya
'Which kinne or @kin is used. The vapor deposition no. 2 may be deposited via the support 1 and the barrier no. The barrier layer is formed by, for example, Al hexagonal oxidation treatment. Support 1
Even if the surface of the vapor deposition layer 2 is rough as shown in the figure, the temperature of the vapor deposited layer 2 is 180 to 300°C, which is higher than the glass transition vortex layer, for example, 200 to 300°C.
2 s O'0o)yibKr Since the heated support 1 is provided in a highly fluid state, the support I
Q) Creates a smooth surface regardless of surface texture. The support l coated with this vapor deposition j-2 was heated to 25~1;30°C.
For example, when a 5e-As alloy is deposited in the same manner at 100°C to form the vapor deposited layer 3 on the surface side, island-like or granular parts are formed on the surface 4 due to the low fluidity. Provides surface roughness. The surface roughness to be given is U.
, a range of 1 to 2 μm can be used, especially 02 to 1 μIn
It is preferable that the size of the unevenness is smaller than the particle size of the toner used in the surface direction. If the unevenness is larger than this, spot-like charging unevenness will occur, causing defects on the image.
また凹凸があまり小さいと、本発明よる所望のクリーニ
ング性の改善が得られない。Further, if the unevenness is too small, the desired improvement in cleaning performance according to the present invention cannot be obtained.
支持体1の表面が第1図に示すよう7.1′租囲でなく
て第2図に示すように平滑である場合にも同様に高温蒸
着層2、低温蒸着槽3を積層して嘴Aの表面粗;tを得
ることができる。Even if the surface of the support 1 is not 7.1' in area as shown in FIG. 1 but is smooth as shown in FIG. The surface roughness of A; t can be obtained.
蒸着層2.3は同−真仝室内で連続しで形成することも
、あるいは蒸着112を形成しf:のち、常圧ふん囲気
にさらし引つづき別の真空室へNILで蒸着!−3を形
成することもできる。蒸着1m 2はSe As合金
でなく、純SeあるいはSe −Te 合金など他のS
e系材料をそれぞれのガラス転移温度」゛ノ上で蒸着し
て形成でてもよい。本発明により形成された光4m層の
電子写真特性は従来の平滑な:IP面をもつ光導電層の
それに劣らないことが確かy)らnたが、各層に元導X
*性改善の目的でCI。The vapor deposition layers 2.3 may be formed continuously in the same vacuum chamber, or the vapor deposition layer 112 may be formed and then exposed to an atmospheric pressure atmosphere and subsequently deposited with NIL in another vacuum chamber. -3 can also be formed. 1 m2 of vapor deposited is not SeAs alloy but other S such as pure Se or Se-Te alloy.
They may also be formed by vapor depositing e-based materials at their respective glass transition temperatures. It is certain that the electrophotographic properties of the photoconductive layer formed according to the present invention are not inferior to those of the conventional photoconductive layer having a smooth IP surface.
*CI for the purpose of improving sex.
1、S、Sb寺の公知の物質を添加する事も可能である
。またAs−Se合金はAsaSeJの組成の化合物で
、hつでもよい。It is also possible to add known substances such as 1, S, and Sb. Further, the As-Se alloy may be a compound having the composition of AsaSeJ.
本発明によりlt、4電層表面に0.2〜0.4μml
〕はぼ均一で倣細な凹凸を肩する感光体を製作し、この
感光体を市販の俵写慎に装着して繰返し画像試験を行っ
た。比較のため、光導電体表面がlt沢を持つ平滑面で
ある感光体を用いて同時に試験を行った結果、平滑面を
有する感光体においては2万枚コピー後リファイニング
が必要となる程度に轡渾上lこ汚れを生じたが、本発明
に基づく感光体の′場合には2万枚コピー俊も#J實の
低下が見られず、クリーニング性の向上および光導電層
表面の無損傷が認められた。According to the present invention, lt, 0.2 to 0.4 μml on the surface of the 4-electrolayer
] A photoreceptor was produced that was fairly uniform and could handle fine irregularities, and this photoreceptor was mounted on a commercially available Tawara Shashin and repeated image tests were conducted. For comparison, we conducted a test at the same time using a photoconductor with a smooth photoconductor surface, and found that the photoconductor with a smooth surface required refining after copying 20,000 copies. However, in the case of the photoreceptor based on the present invention, no deterioration in #J quality was observed even after 20,000 copies were made, and the cleaning performance was improved and the surface of the photoconductive layer was not damaged. was recognized.
以−七述べたよう−こ、本発明は真g!蒸層時の漬体温
朋を高、低の二段にすることにより光導電層表面を粗面
化して転写性、転写紙の分解性、クリーニング性の向上
をもたらすものであり、従来の装置と従来の材料のみを
用いて容易Jこ実施でき、電子写真特性の遜色のない光
導11LjWiを博する艮寿命の電子4具用感光体が得
られ、d写七噌、プリンタなどに極めてM効(こ適用で
きる。As stated above, the present invention is truly outstanding! By setting the soaking temperature in two stages, high and low, during the vaporization process, the surface of the photoconductive layer is roughened, resulting in improved transferability, decomposability of the transfer paper, and cleaning performance, and is different from conventional equipment. A photoreceptor for electronic four-tools that can be easily carried out using only conventional materials, exhibits a light guide of comparable electrophotographic properties, and has a long lifespan is obtained. This can be applied.
第1図は本発明の一実施例による電子与具用感光体のe
r面図、第2図は別の実施例による感光体の断面図であ
る。
1:導電作業体、2:l1fi!#層層、3:低′Or
A島ブ11[)1−1゜
才を図 才20FIG. 1 shows a photoreceptor for an electronic donor according to an embodiment of the present invention.
The r-plane view and FIG. 2 are cross-sectional views of a photoreceptor according to another embodiment. 1: Conductive work body, 2: l1fi! #layer layer, 3: low'Or
A Island Bu 11 [) 1-1゜ years old Figure 20 years old
Claims (1)
度に保持した導電性基体上に蒸着し、次いでその基体を
25〜130℃に保持してセレン−ひ素合金を蒸着する
ことを特徴とする罐子写真用感元体の製造方法。1) Use a selenium-based material at a temperature higher than the glass transition temperature of the material.
1. A method for producing a photoreceptor for photographic containers, which comprises depositing a selenium-arsenic alloy on a conductive substrate held at a temperature of 25 to 130°C.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5872882A JPS58174955A (en) | 1982-04-08 | 1982-04-08 | Manufacture of electrophotographic receptor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5872882A JPS58174955A (en) | 1982-04-08 | 1982-04-08 | Manufacture of electrophotographic receptor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58174955A true JPS58174955A (en) | 1983-10-14 |
JPH0157897B2 JPH0157897B2 (en) | 1989-12-07 |
Family
ID=13092558
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5872882A Granted JPS58174955A (en) | 1982-04-08 | 1982-04-08 | Manufacture of electrophotographic receptor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58174955A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62163058A (en) * | 1986-01-13 | 1987-07-18 | Canon Inc | Electrophotographic sensitive body |
-
1982
- 1982-04-08 JP JP5872882A patent/JPS58174955A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62163058A (en) * | 1986-01-13 | 1987-07-18 | Canon Inc | Electrophotographic sensitive body |
JPH0448387B2 (en) * | 1986-01-13 | 1992-08-06 | Canon Kk |
Also Published As
Publication number | Publication date |
---|---|
JPH0157897B2 (en) | 1989-12-07 |
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