JPS58174416A - Epoxy resin composition for sealing of semiconductor - Google Patents

Epoxy resin composition for sealing of semiconductor

Info

Publication number
JPS58174416A
JPS58174416A JP5671982A JP5671982A JPS58174416A JP S58174416 A JPS58174416 A JP S58174416A JP 5671982 A JP5671982 A JP 5671982A JP 5671982 A JP5671982 A JP 5671982A JP S58174416 A JPS58174416 A JP S58174416A
Authority
JP
Japan
Prior art keywords
epoxy resin
resin
polybutadiene
phenol
resin composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5671982A
Other languages
Japanese (ja)
Inventor
Michiya Azuma
東 道也
Shinetsu Fujieda
新悦 藤枝
Akira Yoshizumi
善積 章
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP5671982A priority Critical patent/JPS58174416A/en
Publication of JPS58174416A publication Critical patent/JPS58174416A/en
Pending legal-status Critical Current

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  • Compositions Of Macromolecular Compounds (AREA)
  • Epoxy Resins (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Organic Insulating Materials (AREA)

Abstract

PURPOSE:To prepare the titled composition having lowered expansion coefficient and elastic modulus without lowering the glass transition point of the resin, by adding a polybutadiene-modified epoxy resin to a resin system composed of novolak-type epoxy resin, a phenol novolak resin hardener, etc. CONSTITUTION:The objective composition is prepared by compounding ( I ) a resin system containing (A) a novolak-type epoxy resin, (B) a phenol novolak resin hardener (preferably having a softening point of 70-110 deg.C), (C) a cure accelerator [e.g. 2-(dimethylaminomethyl)-phenol] and (D) an inorganic filler (e.g. crystalline silica powder, talc, etc.) with (II) a polybutadiene-modified epoxy resin (preferably the reaction product of a carboxyl-containing polybutadiene resin with a bisphenol A-type epoxy resin). The ratio of the component (II) to the sum of the component ( I ) and the component (II) is preferably 10-50wt%.

Description

【発明の詳細な説明】 (技術分野〕 本発明はフェノール硬化エポキシ樹脂のガラス転移点を
上昇または維持しつつ低弾性率、低膨張率の硬化物を提
供する半導体封止用エポキシ樹脂薊成物6二関する。
Detailed Description of the Invention (Technical Field) The present invention provides an epoxy resin compound for semiconductor encapsulation that provides a cured product with a low elastic modulus and low expansion coefficient while increasing or maintaining the glass transition point of a phenol-cured epoxy resin. 62 related.

〔従来技術とその問題点〕[Prior art and its problems]

一般(:、樹脂による封止の場合半導体素子を直接封止
することが行なわれ、そのためインサート物と樹脂との
線膨張率の差や、熱応力C;より素子ベレット6二割れ
を生じたり、ボンディング線が切W1されるなどの問題
があり素子への応力を小さくすることが望まれ、近年半
導体素子の大型化に供なって増々その要求が強くなって
いる。応力を小さくするには低弾性率で低膨張率、低ガ
ラス転移点をもたせることであるが、耐湿性、耐熱衝撃
性の面からガラス転移点が高いことが必要である。
In the case of sealing with resin, the semiconductor element is directly sealed, and as a result, the difference in linear expansion coefficient between the insert and the resin, thermal stress C; cracking of the element pellet 6, etc. Due to problems such as bonding lines being cut W1, it is desired to reduce the stress on the device, and as semiconductor devices have become larger in recent years, this demand has become stronger. The purpose is to have a low expansion coefficient and a low glass transition point in terms of elastic modulus, but it is necessary to have a high glass transition point in terms of moisture resistance and thermal shock resistance.

低応力化の一方法として可撓化剤C二よる変成が考えら
れるが、従来の可撓化剤では低弾性率化効果は靴められ
ても、ガラス転移点が急激6二降下し、高温電気特性が
低下し、耐湿性への影響が大きい。
One possible way to lower the stress is through transformation using a flexibilizing agent C2, but even if conventional flexibilizers are effective in lowering the elastic modulus, the glass transition point drops sharply by 62, and at high temperatures. Electrical properties deteriorate and moisture resistance is greatly affected.

一方、低弾性率でかつ高ガラス転移点を有する樹脂とし
てシリコーン系樹脂があるが金属との接着性感二劣り透
湿性が大きいなどの問題があり耐湿性の面で信頼性に欠
ける。またフェノール硬化型エポキシ樹脂を末端に官能
基を有するポリブタジェン系樹脂やアクIJaニトリル
系樹脂で変成シ2次場合、ガラス転移点の低下は小さい
のC二対して線膨張率が大きくなりその添加量はかぎら
れ低弾性率、低膨張率、高ガラス転移点′を有する41
1Nは得ご二くい。             、、・
・1い 〔発明の目的〕 本発明は、高ガラス転移点(150℃以上)、低弾性率
(1a60’t/−以下)、低膨張率(2,3xlO−
’dap−”以下)の樹脂を得ることを目的とするとす
るものである。
On the other hand, silicone resins are available as resins that have a low modulus of elasticity and a high glass transition point, but they have problems such as poor adhesion to metals and high moisture permeability, and are unreliable in terms of moisture resistance. In addition, when a phenol-curing epoxy resin is modified with a polybutadiene resin or AkuIJa nitrile resin that has a functional group at the end, the glass transition point decreases little, but the linear expansion coefficient increases and the amount added increases. 41, which has a low elastic modulus, low expansion coefficient, and high glass transition temperature.
1N is a good deal. ,,・
・1 [Object of the invention] The present invention has a high glass transition point (150°C or higher), a low elastic modulus (1a60't/- or less), and a low expansion coefficient (2,3xlO-
The purpose of this invention is to obtain a resin of 'dap-' or lower).

〔発明の概要〕[Summary of the invention]

すなわち本発明は、 a) ノボラック派エポキシ樹脂 善) フェノールノボラック樹脂硬化剤C)硬化促進剤 a)  無機質フィラー を必須成分とする樹脂系1: ・) ポリブタジェン変成エポキシ樹脂を添加してカる
ことを特徴とする半導体封止用エポキシ樹脂組成物であ
る0 本発明C二おいてノボラック城エポキシ棚脂としては、
クレゾールノボラック型エポキシ樹に、フェノールノボ
ラック型エポキシ樹脂、臭素化フェノールノボラック門
エポキシ樹脂等でありこれら昌 化合物の1種又は色、4以上使用できる0本発明8二お
いて用いる硬化剤としてのフェノールノボラック樹脂と
しては、フェノール、クレゾール、キシレノール、レゾ
ルシノール、クロルフェノール、フェニルフェノール、
ビスフェノールAなどの1種または2種以上の混合物と
ホルムアルデヒド又は、パラホルムアルデヒドを、酸を
触媒として反応して得たものなどであり、かつ樹脂組成
物の架橋音直を^め、半導体素子へのモノマーの悪影響
を除くため、未反応モノ!−Fi該フェノール樹脂中0
.5−以下C;押えることが望ましい。
That is, the present invention includes: a) a novolak epoxy resin, a phenolic novolac resin curing agent, C) a curing accelerator, a) a resin system containing an inorganic filler as an essential component, and a) a polybutadiene-modified epoxy resin. In the present invention C2, which is an epoxy resin composition for semiconductor encapsulation characterized by:
Phenol novolac type epoxy resin, brominated phenol novolac type epoxy resin, etc. can be used for cresol novolac type epoxy resin, and one type or color of these compounds, four or more can be used.0 Phenol novolak as a curing agent used in the present invention 82 As resins, phenol, cresol, xylenol, resorcinol, chlorophenol, phenylphenol,
It is obtained by reacting one or more mixtures of bisphenol A and formaldehyde or paraformaldehyde with an acid as a catalyst, and is suitable for crosslinking of resin compositions and for use in semiconductor devices. Unreacted monomers to remove the negative effects of monomers! -Fi 0 in the phenolic resin
.. 5- or less C: It is desirable to hold down.

なおその軟化点は70℃〜11G’Cが望ましい。しか
してこれらエポキシ樹脂と7エノール樹脂の組会せでは
、エポキシ樹脂中6二含まれるエポキシ基l@尚たりフ
ェノール性水酸基が0.5〜2.0個となるような割合
いで用いるのが好ましい。
Note that the softening point is preferably 70°C to 11G'C. Therefore, in the combination of these epoxy resins and 7-enol resins, it is preferable to use them in a ratio such that the number of epoxy groups contained in the epoxy resin is 0.5 to 2.0. .

本発明において硬化促進剤としては公知の触媒が使用で
き1例えtf2−(ジメチルアミンメチル)フェノール
、2.4.6−)リス(ジメチルアミノメチル)フェノ
ール、ベンジルジメチルアミン。
In the present invention, known catalysts can be used as the curing accelerator, such as tf2-(dimethylaminemethyl)phenol, 2.4.6-)lis(dimethylaminomethyl)phenol, and benzyldimethylamine.

α−メチルベンジルジメチルアミンのような第三アミ7
.2−メチルイミダゾール、2−フェニルイミダゾール
、2−ヘプタデシルイミダゾール。
Tertiary amide 7 such as α-methylbenzyldimethylamine
.. 2-methylimidazole, 2-phenylimidazole, 2-heptadecyl imidazole.

2−エチル−4−メチルイミダゾール等のイミダゾール
類ヤトリフェニルホスフインなどホスフィン類がありそ
の添加′Ikは成形材料中C二0.1〜1.0重量−で
充分である。
There are imidazoles such as 2-ethyl-4-methylimidazole and phosphines such as yatriphenylphosphine, and it is sufficient to add them to an Ik of 0.1 to 1.0% by weight of C2 in the molding material.

本発明の必須成分をなす無機質フイ2−としては例えは
結晶性シリカ粉、石英ガラス粉、タルクケイ酸カルシウ
ム粉、ケイ酸ジルコニウム粉、アル建す粉、!IL酸カ
ルシウム粉、クレー、硫酸バリクム粉、ガラス繊維など
があけられる0これら無機質フィラーの添加量としてu
s so〜85[Jiチがmましく、85重量%以上で
は組成物の流動性が低く、50重量−以下では線膨張率
が大きくなるなどの問題が生じる、したがって50〜8
s1量−の範囲舊二おいて無機質フィラーの種類により
所望の弾性率、線膨張率、ガラス転移点を付与するに十
分な量配合される。
Examples of inorganic fillers which are essential components of the present invention include crystalline silica powder, quartz glass powder, calcium talc silicate powder, zirconium silicate powder, and aluminum powder. Calcium IL acid powder, clay, baricum sulfate powder, glass fiber, etc. can be used.The amount of these inorganic fillers added is u.
So~85
Depending on the type of inorganic filler, an amount sufficient to provide desired elastic modulus, linear expansion coefficient, and glass transition point is added within the range of s1 amount.

さらIm、本発明I:おいてポリブタジェン変成エポキ
シ樹脂としては、例えば日本1違社製11iPB −1
4、IRFB−13、KPB−12B 、  FiPB
−17,大日本インキ社製テ5R−960などがあり、
また、末端カルボキシル基を有するポリブタジェン系樹
脂とビスフェノールム屋エポキシ樹脂を130〜150
℃窒素雰囲気下2〜lO時間程度の反応l二よって得ら
れるポリブタジェン変成エポキシ樹脂などである。前記
末端カルボキシル基を有するポリブタジェンとしては例
えば日本1達社製FB−C−1000、FB−(! −
2000、グツドリッチ社製Hycar −c’rn 
、 0TBI。
Furthermore, in Invention I, the polybutadiene-modified epoxy resin is, for example, 11iPB-1 manufactured by Nippon Ichisha.
4, IRFB-13, KPB-12B, FiPB
-17, Dainippon Ink Co., Ltd. Te5R-960, etc.
In addition, polybutadiene resins and bisphenol epoxy resins having terminal carboxyl groups are used at 130 to 150%.
These include polybutadiene-modified epoxy resins obtained by reaction for about 2 to 10 hours in a nitrogen atmosphere at °C. Examples of the polybutadiene having a terminal carboxyl group include FB-C-1000 and FB-(!-
2000, Hycar-c'rn manufactured by Gutdrich
, 0TBI.

0TB11@、どがある。またビスフェノールA型エポ
キシ樹脂として絋例えばシェル化学社製エビコー)  
827. 828. 834. 836. 10G1.
 1004. 100?  、  チバガイギー社製ア
ラルダイト0Y−252,250,260280及び6
071.608番、 6097.ダウケミカル社製DI
R−330,331,337,66L 664.大日本
インキ化学工業社製エビクロン800.1010.10
00.3010旭電化工業社製7デカレジ/ IF−4
080,F!P−4000などがある。
0TB11@, there is. It can also be used as a bisphenol A type epoxy resin (e.g. Ebiko manufactured by Shell Chemical Co., Ltd.).
827. 828. 834. 836. 10G1.
1004. 100? , Ciba Geigy Araldite 0Y-252, 250, 260280 and 6
071.608, 6097. Dow Chemical Company DI
R-330, 331, 337, 66L 664. Ebikuron 800.1010.10 manufactured by Dainippon Ink Chemical Industry Co., Ltd.
00.3010 Asahi Denka Kogyo Co., Ltd. 7 Dekaregi/IF-4
080,F! Examples include P-4000.

これらポリブタジェン変成エポキシ樹脂の添加諷は、ノ
ボラック型エポキシ樹−(−)に対してポ丁、:。
The admixture of these polybutadiene-modified epoxy resins is poting for novolac type epoxy resin (-).

リプタジエン変成エポキシ樹脂□1.〔・〕を〔・〕4
゜〕+〔。〕で、55〜60重量の範囲であり、好まし
くは10〜50重量−である。それ#i、5重量−以下
では弾性率の低下が少なく% 60重量−以上ではTt
の低下がみられ、また機械的強度の低下、高温電気特性
の低下が大きい。10〜5o31量チの範囲では変成前
のガラス転移点よりも高いガラス転移点が得られ、t 
九20 %〜30%あたりにピークがみられる。この範
囲内では低弾性率、低膨張率でバランスのとれた樹脂が
得られる。
Liptadiene modified epoxy resin □1. 〔・〕〔・〕4
゜〕+〔. ] and is in the range of 55 to 60 weight, preferably 10 to 50 weight. It #i, below 5 weight, the elastic modulus decreases less%, and above 60 weight, Tt
A decrease in mechanical strength and high-temperature electrical properties were observed. In the range of 10 to 5o31, a glass transition point higher than that before metamorphosis can be obtained, and t
A peak is seen around 20% to 30%. Within this range, a well-balanced resin with low elastic modulus and low expansion coefficient can be obtained.

本発明の組成物でtib)成分である硬化用フェノール
ノボラック樹脂中の未反応フェノールが0.5重量−以
下であることが望ましい。ま九、エポキ/Aと7−1−
/−ル性水酸基の尚量比(エポキシ基/フェノール性水
酸基)は、0.5〜2.0の範囲が、本発明の目的にと
っては好ましい。いずれもむの範囲を越えると本発明の
所期の効果紘得られない。
In the composition of the present invention, it is desirable that the amount of unreacted phenol in the curing phenol novolac resin, which is component tib), is 0.5 weight or less. Maku, Epoki/A and 7-1-
For the purpose of the present invention, the desired ratio of hydroxyl groups/phenolic hydroxyl groups (epoxy group/phenolic hydroxyl group) is preferably in the range of 0.5 to 2.0. If the above range is exceeded, the desired effect of the present invention cannot be obtained.

本発明においては、その他、必要に応じて天然ワックス
、合成ワックス、高級脂肪酸お“よびその金属塩類、も
しくはパラフィンなどの離型剤あるいはカーボンのよう
ll:な着色剤、さらにカップリング剤などを加えても
よい。また三酸化アンチモン、五酸化アンチモン、リン
酸塩およびリン化合物等の難燃剤を添加してもよい。
In the present invention, in addition, natural waxes, synthetic waxes, higher fatty acids and their metal salts, or release agents such as paraffin, coloring agents such as carbon, and coupling agents may be added. Flame retardants such as antimony trioxide, antimony pentoxide, phosphates and phosphorus compounds may also be added.

〔発明の効果〕 本発明によれば、エポキシ樹脂のガラス転移点を低下さ
せることなく、容易に低弾性率、低膨張率化することが
できる。
[Effects of the Invention] According to the present invention, the elastic modulus and expansion coefficient of the epoxy resin can be easily lowered without lowering the glass transition point of the epoxy resin.

〔発明の実施例〕[Embodiments of the invention]

実施例、比較例 下記の材料を用いて表−1に示すごとき組成のエポキシ
樹脂組成物(実施例1〜12 、比較例1〜5)を電キ
サ−6二より混合、加熱p−ルI:よる混練冷却後粉砕
して成形用エポキシ樹脂組成物を―製した。次いてこれ
ら組成物を170℃×3分の条件で硬化試験片を作製し
180℃×8時間後硬化を行なった俵諸特性を評価した
0その結果を夛−2に示した。
Examples and Comparative Examples Using the following materials, epoxy resin compositions (Examples 1 to 12, Comparative Examples 1 to 5) having the compositions shown in Table 1 were mixed in an electric mixer 62 and heated in a P-ru I. : After kneading, cooling, and pulverizing, an epoxy resin composition for molding was prepared. These compositions were then cured at 170 DEG C. for 3 minutes to prepare test pieces, and after curing at 180 DEG C. for 8 hours, various properties of the bales were evaluated.The results are shown in Table 2.

エポキシ樹脂 ム:クレゾールノボラック型エポキシ樹脂(エポキシ商
量220) B:臭素化フェノールノボラック型エポキシ樹脂   
 (エポキシ轟量270)フェノールllI4脂 フェノールノボラック温樹脂 (水駿基幽量104) 硬化促進剤 ヘプタデシルイミダゾール 変成剤 A : ]!1PB−14日本曹達社製(エポキシ当量
的475) B=テ8R−960大日本インキ社製 (エポキシ商量約240) C:IFB−13日本1達社製 (エポキシ当量的850) D : PB−0−2000日本1違社製(分子量約2
000 、11価37.1 )E:CτB)i−130
0X15グツドリッチ社製(ブタジェン・アクリロニト
リル分子量3400.AM%10)F : PB−C−
2000100部とビスフェノールA型エポキシ樹脂 
シェル化学社#1p−1001200部とを窒素を吹き
込みながら140℃i二て4時間反応させたポリブタジ
ェン変成エポキシ樹脂。
Epoxy resin: Cresol novolac type epoxy resin (epoxy commercial amount 220) B: Brominated phenol novolac type epoxy resin
(Epoxy amount 270) Phenol llI4 fat phenol novolac hot resin (Suishun base amount 104) Hardening accelerator Heptadecylimidazole Modifying agent A: ]! 1PB-14 manufactured by Nippon Soda Co., Ltd. (epoxy equivalent: 475) B = TE8R-960 manufactured by Dainippon Ink Co., Ltd. (epoxy commercial volume: approximately 240) C: IFB-13 manufactured by Nippon Soda Co., Ltd. (epoxy equivalent: 850) D: PB- 0-2000 Made by a different company in Japan (molecular weight approx. 2
000, 11 valence 37.1)E:CτB)i-130
0X15 Gutdrich (butadiene/acrylonitrile molecular weight 3400.AM%10) F: PB-C-
2000100 parts and bisphenol A type epoxy resin
A polybutadiene-modified epoxy resin obtained by reacting 200 parts of Shell Chemical Co., Ltd. #1p-1001 at 140°C for 4 hours while blowing nitrogen.

その他 無機質フィラーとして溶融シリカ(充てん剤A
)、結晶性シリカ(充てん剤B)を使用し、難燃剤とし
て三酸化アンチモン。
Others: Fused silica (filler A) as an inorganic filler
), using crystalline silica (filler B) and antimony trioxide as flame retardant.

カップリング剤としてA−187(日本ユニカー)、顔
料としてカーボンブラック、離型剤としてヘキストm(
ヘキストジャパン社1iりを用いた。
A-187 (Nihon Unicar) as a coupling agent, carbon black as a pigment, Hoechst M (
Hoechst Japan 1i was used.

以上衣−1および表−2から7エノール硬化型エポキシ
樹脂暑二、ポリブタジェン変成エポキシ樹脂の添加量が
5〜60重量嘔の範囲内であれは、変成前の樹脂のガラ
ス転移点を低下させる仁となく低膨張率、低弾性率化が
可能であり、特に10〜50重量−の範8においては変
成前よりもガラス転移点の高い樹脂が得られることがわ
かる。
If the amount of the enol-curing epoxy resin or polybutadiene-modified epoxy resin is within the range of 5 to 60% by weight from the above-mentioned coating-1 and Table-2, it is necessary to use a compound that lowers the glass transition point of the resin before modification. It can be seen that a low expansion coefficient and a low elastic modulus can be obtained, and particularly in range 8 of 10 to 50% by weight, a resin having a higher glass transition point than that before modification can be obtained.

以下余白 □Margin below □

Claims (1)

【特許請求の範囲】 (1) 6)ノボラック型エポキシ樹脂尋)フェノール
ノボラック樹脂硬化剤 c)(il!化促進剤 d)無機質フィラー 。)ポリブタジェン変成エポキシ樹脂 からなることを特徴とする手導体對止用エポキシ樹脂組
成物 (2)前記成分e)のポリブタジェン変成エポキシ樹脂
が、カルボキシル基含有ポリブタジェン系樹脂とビスフ
ェノールAWエポキシ樹脂との反応物項記載の半導体刺
止用エポキシ樹脂組成物(3)前記成分法)の硬化用フ
ェノールノボラック樹脂中の未反応フェノールが0.5
賞tS以下であ卆 る特許請求範囲第1項記載の半導体封止用エポキシ樹脂
組成物。 (4)前記成分中のエポキシ基とフェノール水酸記載の
半導体封止用エポキシ樹脂組成物。
[Scope of Claims] (1) 6) Novolak type epoxy resin) Phenol novolac resin curing agent c) (il! conversion accelerator d) Inorganic filler. ) An epoxy resin composition for holding a hand conductor, characterized in that it consists of a polybutadiene-modified epoxy resin (2) The polybutadiene-modified epoxy resin of component e) is a reaction product of a carboxyl group-containing polybutadiene resin and a bisphenol AW epoxy resin. The amount of unreacted phenol in the curing phenol novolak resin of the epoxy resin composition for semiconductor stabbing described in section (3) (above component method) is 0.5.
The epoxy resin composition for semiconductor encapsulation according to claim 1, which is distributed at a price of tS or less. (4) An epoxy resin composition for semiconductor encapsulation as described in the epoxy group and phenol hydroxyl in the components.
JP5671982A 1982-04-07 1982-04-07 Epoxy resin composition for sealing of semiconductor Pending JPS58174416A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5671982A JPS58174416A (en) 1982-04-07 1982-04-07 Epoxy resin composition for sealing of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5671982A JPS58174416A (en) 1982-04-07 1982-04-07 Epoxy resin composition for sealing of semiconductor

Publications (1)

Publication Number Publication Date
JPS58174416A true JPS58174416A (en) 1983-10-13

Family

ID=13035290

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5671982A Pending JPS58174416A (en) 1982-04-07 1982-04-07 Epoxy resin composition for sealing of semiconductor

Country Status (1)

Country Link
JP (1) JPS58174416A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6162511A (en) * 1984-09-05 1986-03-31 Sumitomo Bakelite Co Ltd Epoxy resin composition
JPS6162514A (en) * 1984-09-05 1986-03-31 Sumitomo Bakelite Co Ltd Epoxy resin composition
JPS61283615A (en) * 1985-06-11 1986-12-13 Sumitomo Bakelite Co Ltd Epoxy resin molding material for sealing semiconductor
JPS6281446A (en) * 1985-10-04 1987-04-14 Sumitomo Bakelite Co Ltd Epoxy resin composition
JPS62149743A (en) * 1985-12-25 1987-07-03 Sumitomo Bakelite Co Ltd Epoxy resin molding material for use in sealing semiconductor
JPH0193155A (en) * 1987-10-05 1989-04-12 Sumitomo Bakelite Co Ltd Resin-sealed semiconductor device
US5114994A (en) * 1990-03-23 1992-05-19 Mitsubishi Denki Kabushiki Kaisha Epoxy resin composition for sealing semiconductor
JP2006282961A (en) * 2005-04-05 2006-10-19 Sekisui Chem Co Ltd Thermosetting resin composition, electronic material substrate and method for producing the substrate

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6162511A (en) * 1984-09-05 1986-03-31 Sumitomo Bakelite Co Ltd Epoxy resin composition
JPS6162514A (en) * 1984-09-05 1986-03-31 Sumitomo Bakelite Co Ltd Epoxy resin composition
JPS61283615A (en) * 1985-06-11 1986-12-13 Sumitomo Bakelite Co Ltd Epoxy resin molding material for sealing semiconductor
JPS6281446A (en) * 1985-10-04 1987-04-14 Sumitomo Bakelite Co Ltd Epoxy resin composition
JPS62149743A (en) * 1985-12-25 1987-07-03 Sumitomo Bakelite Co Ltd Epoxy resin molding material for use in sealing semiconductor
JPH0551610B2 (en) * 1985-12-25 1993-08-03 Sumitomo Bakelite Co
JPH0193155A (en) * 1987-10-05 1989-04-12 Sumitomo Bakelite Co Ltd Resin-sealed semiconductor device
US5114994A (en) * 1990-03-23 1992-05-19 Mitsubishi Denki Kabushiki Kaisha Epoxy resin composition for sealing semiconductor
JP2006282961A (en) * 2005-04-05 2006-10-19 Sekisui Chem Co Ltd Thermosetting resin composition, electronic material substrate and method for producing the substrate

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