JPS58169962A - 半導体集積回路 - Google Patents
半導体集積回路Info
- Publication number
- JPS58169962A JPS58169962A JP58040922A JP4092283A JPS58169962A JP S58169962 A JPS58169962 A JP S58169962A JP 58040922 A JP58040922 A JP 58040922A JP 4092283 A JP4092283 A JP 4092283A JP S58169962 A JPS58169962 A JP S58169962A
- Authority
- JP
- Japan
- Prior art keywords
- region
- impurity density
- density
- layer
- gates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 14
- 239000012535 impurity Substances 0.000 claims abstract description 27
- 239000004020 conductor Substances 0.000 claims 1
- 230000006386 memory function Effects 0.000 claims 1
- 230000010354 integration Effects 0.000 abstract description 8
- 238000009825 accumulation Methods 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 abstract description 3
- 238000009792 diffusion process Methods 0.000 abstract description 2
- 239000011159 matrix material Substances 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
- H10B99/10—Memory cells having a cross-point geometry
Landscapes
- Semiconductor Memories (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58040922A JPS58169962A (ja) | 1983-03-12 | 1983-03-12 | 半導体集積回路 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58040922A JPS58169962A (ja) | 1983-03-12 | 1983-03-12 | 半導体集積回路 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP52030900A Division JPS592379B2 (ja) | 1977-03-19 | 1977-03-19 | 半導体メモリ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58169962A true JPS58169962A (ja) | 1983-10-06 |
JPH0559585B2 JPH0559585B2 (enrdf_load_stackoverflow) | 1993-08-31 |
Family
ID=12593986
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58040922A Granted JPS58169962A (ja) | 1983-03-12 | 1983-03-12 | 半導体集積回路 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58169962A (enrdf_load_stackoverflow) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53116084A (en) * | 1977-03-19 | 1978-10-11 | Handotai Kenkyu Shinkokai | Semiconductor ic and method of producing same |
-
1983
- 1983-03-12 JP JP58040922A patent/JPS58169962A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53116084A (en) * | 1977-03-19 | 1978-10-11 | Handotai Kenkyu Shinkokai | Semiconductor ic and method of producing same |
Also Published As
Publication number | Publication date |
---|---|
JPH0559585B2 (enrdf_load_stackoverflow) | 1993-08-31 |
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