JPS58168242A - Plasma oxidizing and depositing device - Google Patents

Abstract

PURPOSE:To obtain a plasma oxidizing and depositing device which accelerates the refreshing of a plasma in a region and can obtain a preferable product with good reproducibility by providing a diffuser of a reaction gas in the vicinity of a workpiece. CONSTITUTION:A reaction gas is not injected direction from a hole of a peripheral wall surface of a feed through coller 2 into a chamber as the conventinal manner, but introduced to a ring-shaped pipe 20 arranged to surround a high frequency electrode 13 in the vicinity of the electrode 13 via a pipe 19 and diffused from a plurality of nozzle holes 21 formed at the peripheral wall opposed to the electrode 13 of the pipe 20. The diameters of the holes of the nozzles are adjusted so that all the reaction gases of the nozzle holes 21 flow in the same amount. This is important to uniformly flow the gas. A shield cylinder 21 is provided between the outer periphery of the electrode 13 and the pipe 20, thereby preventing the voltage distribution of the plasma around the electrode 13 from being disturned by the pipe 20 and generating the plasma only at the surface of a substrate to be machined, on which the electrode 13 is mounted.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a plasma oxidation/evaporation apparatus used for manufacturing Josephson devices, and particularly to an improvement of its gas introduction mechanism.

The following will explain the case in which the method is used for manufacturing a Josephson element. Figure 1 is a schematic diagram showing an example of a conventional plasma oxidation/evaporation system.
,i! l is connected to the pace plate (1) through the sealing part (3).
) connected to the feed-through collar (2) (41 is connected to the feed-through collar (2) through the sealing part (lit), and is connected to the feed-through collar (2) through the nine chambers (61F1). Main pulp, (7) is an exhaust device, (8) is a pipe that penetrates the peripheral wall of the feed-through collar (2) and communicates with the inside, (9) and (101) are stop pulps provided in the pipe (8), respectively. and barrier pull leak pulp, (11) is a gas supply device that supplies the reaction gas through the pipe (8), (lfi is the vacuum gauge that adjusts the vacuum W of the chamber (41Q), and H is the inside of the chamber (4). High frequency electrode near the top,
04 is (13). A high-frequency power source that supplies high-frequency power to high-frequency electrode 4#, a trowel is a substrate to be processed attached to the high-frequency electrode, and a trowel is installed in the chamber (4) to face piece A of the substrate to be processed. The evaporation source (17) is a shutter provided between the substrate to be processed and the evaporation source (l-).

The operation of this device can be easily understood from its configuration.
Avoid details.

By the way, in this conventional device, the reaction gas is supplied to the gas supply device (river - barrier pull leak pulp 1101 - stop pulp (sl) -> pipe (8) - phyto-through collar (2)
and into the chamber (4). FIG. 2 is a partially cutaway front view showing the details of the gas inlet section surrounded by a dashed-dotted line circle (■) in FIG. 1. (18a) is a pipe (811
1 of 7 lunges, (xsb) is stop pulp (8) of 7
It's a lunge. In this conventional method, the nine reactant gases are introduced from the pipe (8) into the chamber (4) with the pipe (8+ air delivery opening (introduction port) in the center at ambient conditions!
The reactant gas spreads out in a complete 70-pattern, and this spreading reaction gas is exhausted at a predetermined rate from the exhaust port of the li+. The external conditions that determine the above flow pattern are the flow rate of the introduced gas, the pressure inside the chamber (4), the exhaust speed, etc. Basically, the mean free path of gas molecules, the self-diffusion coefficient, and the introduction port and exhaust of the reaction gas It is determined by the position of the mouth. Gutszu! Pressure at the time of occurrence 1XIO””teorr, temperature! The mean free path of oxygen molecules at 5oOoK is 0.845 m, and the self-diffusion coefficient is 8'FOOOm"/'; 11. And the average distance that oxygen molecules diffuse in 0.1 seconds is 596 m. These numbers Considering this, the positional relationship between the conventional reaction gas introduction boat and the exhaust port cannot be said to be favorable.In other words, most of the reaction gas introduced from the introduction port flows to the exhaust port, and is located near the substrate to be processed (2). The plasma of
I don't have to worry about it.

That is, the reactant gas does not flow sufficiently into the plasma generating area near the substrate I to be processed, and the plasma is not constantly refreshed. That is, the gases constituting the plasma around the substrate to be processed (2) are the artificially introduced reaction gas and the gas released from the wall of the chamber (4). The gas released from the vessel wall is mainly water, which has a significant negative effect on the #& field effect caused by the artificially introduced reactive gas. Therefore, if this GT apparatus is used to manufacture a tunnel junction layer or the like by the plasma oxidation method, there is a possibility that serious defects in characteristics may occur.

This invention was made in view of the above points, and by providing a reactive gas outlet near the workpiece, it is possible to promote freshness of the plasma in that area and obtain good products with good reproducibility. The aim is to obtain a plasma oxidation/evaporation device that can be used.

FIG. 3 is a partially cutaway front view showing only the reaction gas inlet of an embodiment of the present invention, and FIG. 4 is a partially cutaway bottom view showing only the reaction gas outlet. The same symbols as in the conventional example indicate equivalent parts. In this embodiment, instead of injecting the reaction gas directly from the opening in the peripheral wall of the tweed through collar (2) and flowing into the chamber (4) as in the conventional example, the high-frequency electrode is connected to the pipe (2). (2)
In the vicinity of the electrode (2), the ring-shaped pipe (2)
The liquid is emitted from nozzle holes provided at multiple locations on the peripheral wall facing the high-frequency electrode. The opening diameter of the nozzle holes is adjusted so that the flow rate of the reaction gas from all nozzle holes (b) is the same. This is superimposed to make the flow of reactant gas 'uniform'. Also, a shield is provided between the outer periphery of the high-frequency electrode lls and the ring-shaped pipe, so that the potential distribution of the guts i around the high-frequency electrode 11 is changed to a ring-shaped vibro! This prevents the plasma from being disturbed by the IK and directs the plasma to the high frequency electrode (II).
Attachment of @ should occur only on the surface.

On the other hand, although the amount of introduced reaction gas can be controlled artificially, it is very difficult to control the amount of gas released from the wall of the chamber (4). Therefore, it is preferable to thoroughly bake the chamber (4) in order to reduce the amount of gas released.

The above describes the case in which it is used in the manufacture of digital electronic devices. ! However, it goes without saying that this device can be widely used for plasma oxidation and deposition.

As mentioned above, in the plasma oxidation/evaporation apparatus according to the present invention, the reaction gas is guided and supplied through a pipe to the vicinity of the high-frequency electrode on which the substrate to be processed is attached, so that the reaction to the gas emitted from the chamber wall in that area is The gas ratio can be increased, and improved product properties and improved reproducibility can be achieved.

[Brief explanation of the drawing]

Fig. 531 is a schematic configuration diagram showing an example of a conventional plasma oxidation/evaporation device, Fig. 2 is a partially cutaway front view showing the details of the reaction gas introduction part surrounded by the dot-dash line circle ■ in Fig. 1117; FIG. 3 is a partially cut-away front view of only the reactive gas introduction section of an embodiment of the present invention, and FIG. 4 is a partially cut-away bottom view of only the reactant gas blow-off section. In the figure, il+ is a paste spray), (!l is a feed-through collar, (4) is a chamber, ()) is an exhaust device, (10 is a reaction gas supply device, CtS is a high-frequency electrode,
(141 is a high frequency power supply, (II is a substrate to be processed (workpiece), 091t1 is a reaction gas feeding pipe, - is a ring-shaped pipe, and @phantom is a nozzle hole. In addition, the same reference numerals in the figure are the same or Aishima Show part1111
□ Su0 Agent Shin Kuzuno - (1 other person)

Claims (1)

[Claims] +11 When the required flow rate of reaction gas is supplied inside, 4CF5'rl! A workpiece is attached to a high-frequency electrode provided in a chamber that is evacuated at a high speed and supplied with high-frequency power, and the workpiece is oxidized or vapor-deposited by plasma generated near the high-frequency electrode,
A plasma oxidation/evaporation apparatus characterized in that, after the reaction gas enters the chamber, an outlet pipe is provided near a location where the workpiece is attached. (2) The blow-out port is characterized by a plurality of nozzle holes bored in the peripheral wall portion facing the high-frequency electrode of a ring-shaped pipe arranged around the high-frequency electrode and communicating with the reaction gas supply device. A plasma acid vapor deposition apparatus according to claim 1.