JPS58168218A - Liquid phase epitaxial growth - Google Patents

Liquid phase epitaxial growth

Info

Publication number
JPS58168218A
JPS58168218A JP57050103A JP5010382A JPS58168218A JP S58168218 A JPS58168218 A JP S58168218A JP 57050103 A JP57050103 A JP 57050103A JP 5010382 A JP5010382 A JP 5010382A JP S58168218 A JPS58168218 A JP S58168218A
Authority
JP
Japan
Prior art keywords
layer
inp
plane
epitaxial growth
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57050103A
Other languages
Japanese (ja)
Inventor
Kazuo Nakajima
一雄 中嶋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57050103A priority Critical patent/JPS58168218A/en
Publication of JPS58168218A publication Critical patent/JPS58168218A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02392—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02516—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To realize direct liquid phase epitaxial growth of InP layer without generation of melt-back on the In1-XGaXAs layer by setting the growth starting temperature of the InP solution to a temperature equal to/lower than a particular temperature and an excessive cooling degree to a particular temperature using the In1-XGaXAs layer of the 111A plane. CONSTITUTION:This patent is based on, (1) melt-back is very difficult to occur when the InP solution is placed on the InGaAs layer of 111A plane, and (2) melt-back is very sensitive for epitaxial growth temperature and excessive cooling degree of InP solution but the InP layer grows without melt-back when an excessive cooling degree is 10 deg.C or more at a growth temperature of 580 deg.C or less. The InGaAs layer of 111A plane can be obtained through liquid phase epitaxial growth of InGaAs on the InP crystal (InP substrate or InP layer obtained by epitaxial growth on such substrate) of the 111A plane. Morphology of surface of the InP layer formed on the 111A plane is good and defective edge called hillock is not generated. Use of 111A plane is not disadvantage for preparation of light emitting element and light sensible element.

Description

【発明の詳細な説明】 （１）　　発鳴Ｏ技術分野 本幾―紘■−ＹＪＩＩ化会物半導体、より詳細に述べる
ならは、インジクムーリン（Ｉｍｐ）の液相エビタ今Ｖ
ヤル成長法に関するものである。[Detailed Description of the Invention] (1) Technical field of oscillation O - Hiro - YJII compound semiconductors, more specifically, liquid phase Evita of Indicumulin (Imp)
It is about the growth method.

１）　　ｆｉｌｌＯＩＩ 長波長光通信用の発光素子および受光素子の材料として
■−Ｖ＊化舎物亭導体が研究開発されている。譬に、Ｉ
ｍＰ基１［＃１上に格子整合させることので龜ゐＩＪ−
ｘＧｍ、ム−で”　”（Ｌｌｌ”ＩＬ４７ムＳはエネル
ギーギヤνデが０．７４・Ｖであｐ発光波長ＩＪ８ｍｓ
が得られるＯで、レーデ−中発光〆イオード（ＬＩＤ）
Ｏ発光素子あるい紘ホト〆イオー）’（ＰＤ）ヤアパラ
ンシ島ホト〆イオーＦ（ＡＰＤ）０受光嵩子の材料とし
て有望である。こＯ！ζＩＡ”（Ｌ４７ムＳを発光素子
ＫＭＩｖ＠る場合には、ζＯＩｍＧａＡａ　ｔ−活性層
として、キャリヤー０１Ｒじ込め効果を最も大きくする
ことので龜るｌｍＧａム―Ｐｌ！元艙晶中で最もエネル
ギーギヤ、グＯ大自なＩｍＰダツッド層が活性層をはさ
んだダプルヘテｌ１（ＤＨ）構造とすることが望壇しい
。1) FillOII ■-V*Kashimonotei conductor is being researched and developed as a material for light-emitting elements and light-receiving elements for long-wavelength optical communications. In parable, I
By lattice matching on mP group 1 [#1, 龜ゐIJ-
xGm, m-de""(Lll"IL47mS), energy gear νde is 0.74・V, p emission wavelength IJ8ms
is obtained, and the light emitting diode (LID) during radar is
It is promising as a material for light-emitting devices or light-receiving devices. Koo! When using ζIA'' (L47MuS as a light emitting element KMIv@), it is used as the ζOImGaAat active layer to maximize the carrier 01R trapping effect, so that it has the highest energy gear among the original crystals, It is desirable to have a double-hetero-I1 (DH) structure in which the active layer is sandwiched between two ImP layers, which are natural in nature.

１九、受光素子ＫＩ＠いる場合には、このｌｍＧａム−
を光１ｌＩＩＩｉＬ層とし、その上Ｋ１ｍ１’層をウィ
ンド一層兼増倍層が形成されている。このようＫ　ｌｍ
ＧａＡｓ層の上にはＩｍＰ層が形成されている（ｉｔ’
ｌｌえは、末松、荒井；長波長光過信用光源、電子材料
、Ｖ＠ｘ。19. If there is a light-receiving element KI@, this lmGa-
is the optical 1lIIIiL layer, and the K1m1' layer is formed thereon as a window layer and a multiplication layer. K lm like this
An ImpP layer is formed on the GaAs layer (it'
Ille: Suematsu, Arai; Long wavelength optical overconfidence light source, electronic materials, V@x.

１８、ム１２．Ｐ２７−３４（１Ｇ７１１）、および方
弁、高橋、須崎：長波長光通信用受光素子、電子材料、
ＶｏＪ、１８　＊　ＪＫ　１２　、ｐ　３５−８９　（
ｉ・７９）参照）。18, Mu12. P27-34 (1G711), and Houben, Takahashi, Susaki: Photodetector for long wavelength optical communication, electronic material,
VoJ, 18 * JK 12, p 35-89 (
i.79)).

（３）　　従来技術と問題点 ＩｎＰ層の上Ｋ　ｌｍＧｍＡｍ層を波相エピタキシャル
成長させることは容１であるが、そＯＩｉ＋Ｇａム一層
の上ＫＩｍＰ層を液相エピタキシャル成長させることは
できない、これはｌｍＧａＡｓ層がＩ馳Ｐ溶筐中に溶解
してしまうメルトバックという構象が生じるからである
。このために％　　ＩｍＰ層のエピタキシャル成長開始
温度、冷却速ＩＩおよびＬａＰ濤ＩＩＯ過冷却度を変え
てみてもｌｍＧａＡｓ層上にはメルトバッタなしにＩｍ
Ｐ層を成長させることはできない、そこてＬａＧａＡｓ
層上にいりたんｉｍＧａＡａＰ層をエピタキシャル成長
させてメルＦパ、り鋳止層として、この四元層の上ＫＩ
ｎＰ層を成長させる方法が採用されている。しかしなが
ら、四元層（ＩｍＱａＡｓＰ層）に少しても欠陥（例え
は、未成長ピット）があれは、＋Ｏ欠陥箇所からＩｍＰ
ＩＩｉｌが三元層（ｌｍＧａＡｓ層）壇で浸透して、そ
０部分にメルトバックが生じてし壇う、そＯえめに、歩
留シ良（ＩｍＰ層を成長させることは―しい、１また、
機能上かつ構造上からなくても良ｖｓ圏元層を成長させ
ることは、牛導体し−デーＯ場合には今ヤリャーのとじ
込め効果が曇＜竜）、受光重子の場合は余分なヘテー界
画が増えることにな〕界面欠陥の九め量子効率が曇（な
るなどＯｓめに好ましくない。このようなＩＩＰ層をｌ
ｍＧａＡｓ層上に成長させる場合に、従来は■鳳Ｇ畠ム
ｓＯ結晶は（Ｚｏｏ）ｉｌｉ又は（１１１）１画であ〕
、多くの場合Ｋ（１００）面を用いてい危。(3) Prior art and problems It is possible to grow a KlmGmAm layer on top of an InP layer by wave phase epitaxial growth, but it is not possible to grow a KImP layer on top of an OIi+Ga layer by liquid phase epitaxial growth. This is because a phenomenon called meltback occurs in which the IchiP melts into the casing. For this reason, even if the epitaxial growth start temperature of the ImP layer, the cooling rate II, and the degree of supercooling of the LaP layer were changed, the ImP layer could not be melted without melt batter on the GaAs layer.
It is not possible to grow a P layer, so LaGaAs
An imGaAaP layer was epitaxially grown on top of this quaternary layer, and then a KI layer was formed on top of this quaternary layer.
A method of growing an nP layer is adopted. However, if there is even a slight defect (for example, an ungrown pit) in the quaternary layer (ImQaAsP layer), ImP
IIil penetrates into the ternary layer (lmGaAs layer) and meltback occurs in the ternary layer (lmGaAs layer). ,
From a functional and structural point of view, it is good to grow the vs sphere original layer, in the case of the cow conductor - De O, the confinement effect of Yariya is cloudy <Ryu), and in the case of the light-receiving element, it is an extra hetian world. This is undesirable as the quantum efficiency of interface defects becomes cloudy.If such an IIP layer is
When grown on an mGaAs layer, conventionally the sO crystal is (Zoo)ili or (111) one stroke.]
, it is dangerous to use K(100) plane in many cases.

←）　発＠Ｏ■的 本発−の展的は％　ｌｍ１−、Ｏｓ、ム易層の上にメル
トバックを生じることな（１ｍｌ’層を直ＩＩＫ液相エ
ピタキシャル成長させる方法を提供することである。←) The development of this invention is to provide a method for directly growing a 1 ml' layer by direct liquid phase epitaxial growth without causing meltback on the 1 ml layer, Os, and the 1 ml layer. .

φ）脅ｌｌｏ構成 こＯＳ的が、（１１１）ム面のＩ＋ａ、−ｘＧａｘＡｓ
層を用いて１烏？濤＊０＊長關麺温置を５１０℃以下に
しかつ過冷却度を１０℃以上にすることを特徴とするｌ
＋ａＰ層の液相エピタキシャル成長法によって達成され
る。φ) The OS configuration is (111) I+a, -xGaxAs
1 crow using layers?濤*0*long noodles characterized by keeping the temperature at 510°C or lower and the degree of supercooling at 10°C or higher.
This is achieved by liquid phase epitaxial growth of the +aP layer.

本発明は、（１）　（１１１）ムａｉＯＩｍＧｍＡ一層
の上にＩｍｐ＠液を載せたと！にメルトバックが非常に
起夛にくいこと、および（２）メルトバックはエピタキ
シャル成長温度および１ｍｌ’１ｌｌｌ［０過冷却直に
非常に敏感であるが、５８０℃以下の成長温度で１０℃
以上の過冷却度であればメルトバックなし４（ＩｍＰ層
が成長する仁と、を見出したことに基づ−ている。In the present invention, (1) (111) Imp@ liquid is placed on a single layer of muaiOImGmA! (2) Meltback is very sensitive to epitaxial growth temperatures and supercooling of 1ml'1lll[0];
This is based on the finding that if the degree of supercooling is above, there is no meltback (4) (where the ImpP layer grows).

（１１１）ム面のｌｍＧａＡｓ層は（１１１）ム面ＯＩ
ＭＰ結晶（ＩｍＰ基板又はその上にエピタキシャル成長
させ九Ｉ＋ａＰ層）上Ｋ　ｌｍＧａム−を液相エピタキ
シャル成長させれは祷られる。(111) Mu-plane lmGaAs layer is (111) Mu-plane OI
It is desired to liquid phase epitaxially grow KlmGa on an MP crystal (ImP substrate or an I+aP layer epitaxially grown thereon).

（６）＠嘴の実施例 以下、実施例および実験によりて本発−をさらに詳しく
説明する。(6) Examples of @beak The present invention will be explained in more detail below using examples and experiments.

実施例 ”ｎｃＬ５Ｍ”（Ｌ４７ムＳ層上Ｋｌ亀Ｐ層を次のよう
にして液相工Ｃり今シャル成長させ良・ （１１１）ム面ＯＩｍＦ基板をトリクロールエチレン、
ア令トン、アルロールの順で十分に脱脂し、次に工、テ
ンダｍ１ｍ１　（Ｈ２ＢＯ３：１２０□：Ｈ１０■９０
：Ｂ：ｉ）中にて約３分間エツチングしえ。Example ``ncL5M'' (L47) The Kl-P layer on the S layer was grown using a liquid phase process as follows.
Thoroughly degrease in the order of Aryoton and Alroll, then work and tender m1m1 (H2BO3:120□:H10■90
:B:i) Etch for about 3 minutes.

！Ｉ＆デ基板の研磨歪會除くために基板をメルトバック
するＩＩＩＩｍＰｉｌ箪と、Ｉｎ？基板上に格子整合し
＊（１１１）ム画の”０．ｌｌ３ＧａＱ、４７ムＳ層を
成員させるＩ＠ＧａＡ＠＊ｉ［と、成長させたｌｍＧａ
Ａｓ層上にＩｍＰ層を成長させる第２１＋ａＰ　ＩＩＩ
とを得るために、１体鳳科を下記のように秤量した。! In order to remove the polishing distortion of the I&D board, the IIImPil panel is used to melt back the board, and the In? The grown lmGa is lattice-matched on the substrate and forms a 0.ll3GaQ, 47mmS layer in the *(111) picture.
21st+aP III growing ImpP layer on As layer
In order to obtain the following values, one Fengidae was weighed as follows.

なお、このｌｍＧａム―ＩＩｔＩＩＬは６５）℃にて”
Ｏ，Ｓｉ”０．４７ムＳを成長さｉる＊＊であｊｌ、−
ｔＩＤ溶液組成を三元溶液中の各酸分ｏ１１１子分率で
決わすと次のようＫなる。In addition, this lmGamu-IItIIL is at 65)℃.
Grow O,Si”0.47mmS i** at jl,-
When the tID solution composition is determined by the molecular fraction of each acid component o111 in the ternary solution, K is as follows.

一般に箪相工♂タキシャル成長に使用されているスライ
ド式カーがンが一トに前述ＯＩｍＰＩｎＰ基板各溶液の
秤量原料をセ、トシた。［れる純水素露囲気ガス中にて
全体を６７（１：に昇温し、その温度にて３０分間保持
して、舎濤諌原料を均一に＠解しえ、そして、０．８ｔ
ｌ：／ｍ１ｍの冷却遭！ＩｊＬＫて降温して、６４８℃
になったと１ｋＫ第１ＩｍＰｉｌｌ［をＩｎＰ基板上に
持りて来てかかる基板に振触させ１０秒間保持した。こ
のときにＩｎＰ基板のメルトΔ、りが行なわれる。１０
秒経過仮に、第１■−溶液を基板上から除去し、続いて
ｌｍＧａＡｓ　ｆｈｌｌを基板上に持って来てかかる基
板ＫＪＩＭｔＥｔＩｍ。、□Ｇ１゜、４７ムＳ層を成長
させた。このｌｌＧｍＡｍ溶液は６５０Ｃで飽和するの
で２℃の過冷却状態でエピタキシャル成長が開始された
。A sliding car, which is generally used for taxial growth, was used to set and remove the weighed raw materials for each solution of the OImPInP substrate. [The whole body was heated to 67 (1:1) in an open atmosphere of pure hydrogen gas, and held at that temperature for 30 minutes to uniformly decompose the raw material, and then 0.8 t
l:/m1m cooling encounter! IjLK temperature dropped to 648℃
When the temperature was reached, a 1kK first ImPill was brought onto the InP substrate, and the substrate was shaken and held for 10 seconds. At this time, melting Δ of the InP substrate is performed. 10
If a second passes, the first solution is removed from the substrate, and then the lmGaAs fhll is brought onto the substrate KJIMtEtIm. , □G1°, 47mm S layer was grown. Since this llGmAm solution was saturated at 650C, epitaxial growth was started in a supercooled state of 2C.

６４３℃になったときに、ｌｌＧｍＡｍ溶液をＩｎＰ基
板上から除去してｌｍＧａＡｍ層のエピタキシャル成長
を終了し、得られたｌｍＧａＡｍ層は厚さが２．９趨で
あり、（１１１）ム面の結晶であった。When the temperature reached 643°C, the llGmAm solution was removed from the InP substrate to complete the epitaxial growth of the lmGaAm layer, and the resulting lmGaAm layer had a thickness of 2.9 mm and was a crystal with a (111) plane. there were.

この彼、４℃／ｎ＋ｉｍの冷却速度にて降温して５８０
℃になり九ときに、第２　Ｉ！ＩＰ溶液をＩｎＰ基板上
に持って来てかかるＩｎＰ基板に袈触させｌｍＧａＡｍ
　ＪＩ上Ｋ　ＩａＰ　ＨＩをエピタキシャル成長すせた
。この■ｎＰ溶箪は５９８℃で飽和する溶液テｌルＩ２
）テ１８℃の過冷却状態てエピタキシャル成長が開始さ
れた。５７０℃になっ九ときに１１ｎＰ溶液を基板上か
ら除去してＩａＰ層の成長を終了し、（１１１）ム面の
ＩａＰ層（犀さａ　２．０　μｍ）が得られた。　Ｉｎ
ＧａＡｓ層とその上の１１２層との界面は＃Ａ微微振観
察ら非常に明蓚に現われており、また、断面および表面
の＊＊からｆＧａＡｓ層のメルトパ、りが生じておらず
良好なモ７オロジーを有するＩａＰ層が成長したことが
わかった。なお、との実施例はｖ１図中での＠Ａ”○印
に相当するものである。This guy cooled down to 580 at a cooling rate of 4℃/n+im.
At 9 o'clock, the second I! Bring the IP solution onto the InP substrate and apply the lmGaAm to the InP substrate.
K IaP HI was epitaxially grown on JI. This ■nP solution has a solution temperature I2 that is saturated at 598℃.
) Epitaxial growth was started in a supercooled state of 18°C. When the temperature reached 570° C., the 11 nP solution was removed from the substrate to complete the growth of the IaP layer, and an IaP layer with a (111) surface (size a 2.0 μm) was obtained. In
The interface between the GaAs layer and the 112th layer above it appears very clearly in the #A microscopic vibration observation, and the cross section and surface ** show that the fGaAs layer has no melt top and is a good model. It was found that an IaP layer with a 7-ology was grown. Note that the examples shown in ``@A'' in the v1 diagram correspond to the ○ marks.

実験１ 前述した実施例と同じにＩｎＰ基板上に（１１１）Ａ面
のＩｎＧａＡ＠１５ｋを成長させた４１に、引続いてＩ
ｎＰ層をエピタキシャル成長させる際の冷却速度、エピ
タキシャル成長開始温度ネよび１８℃の過冷却度（一定
）となるＩｎＰ溶液組成を各種設定して１１２層の成長
を行なった。得られたｌｌＩＰ層を良好に成長した場合
（○印）、少し、メルトパ、りが斗じた場合（Δ印）お
よびメルトパ、りが生じた場合（×印）に分類して、冷
却速度（ｔ：　／　ｒａｉｍ　）と成長開始温度（Ｃ）
との関係でグラフにしたのが第１図である。第１図から
エピタキシャル成長開始温度が５８０℃以下でないと良
好な１１２層を成長させることができないことがわかる
。また、冷却速度が小さくなるほど、成長開始温度は下
げなければいけない・ 実験２ 前述した実施例と同じにＩｎＰ基板上に（１１１）Ａ面
のｌｍＧｍＡｓ　Ｉｔ成長させた飯に、引続いてＩａＰ
層をエピタキシャル成長させる際のエピタキシャル成長
開始温度、Ｉｍｐｇ液の過冷却度および過冷却ｆＫ対応
するＩａＰ溶ｗＬ組成を各種設定してＩａＰ層の成長を
行なった。冷却速度は６ｔｌｍｌ監で一定にした。得ら
れた１１２層を実験１と同様に○印、Δ〜印、ｘ印の三
種類に分けて、過冷却度（６）と成長開始温１（Ｃ）と
の関係でグラフにしたのが第２図である。第２図からＩ
ｎＰ溶液の成長開始時の過冷却度が１０℃以上でないと
良好なＩａＰ層を成長させることができないことがわか
る。また、過冷却度を小さくするほど、成長開始温度は
下げなければいけない。Experiment 1 In the same way as in the previous example, (111)A-plane InGaA@15k was grown on an InP substrate, and then I
A total of 112 layers were grown by setting various cooling rates, epitaxial growth start temperatures, and InP solution compositions that resulted in a constant supercooling degree of 18° C. when epitaxially growing an nP layer. The obtained llIP layer was classified into cases in which it grew well (○ mark), cases in which there was a slight melt-over and abrasion (Δ mark), and cases in which melt-operation and adhesion occurred (x mark), and the cooling rate ( t: / raim ) and growth start temperature (C)
Figure 1 shows a graph of the relationship between It can be seen from FIG. 1 that a good 112 layer cannot be grown unless the epitaxial growth start temperature is 580° C. or lower. In addition, as the cooling rate decreases, the growth starting temperature must be lowered.
The IaP layer was grown by setting various IaP solution wL compositions corresponding to the epitaxial growth start temperature, the degree of supercooling of the Impg liquid, and the supercooling fK when growing the layer epitaxially. The cooling rate was kept constant at 6 tlml. As in Experiment 1, the obtained 112 layers were divided into three types, marked with ○, marked with Δ~, and marked with x, and graphed as the relationship between the degree of supercooling (6) and the growth start temperature 1 (C). FIG. From Figure 2 I
It can be seen that a good IaP layer cannot be grown unless the degree of supercooling at the start of growth of the nP solution is 10° C. or higher. Furthermore, the smaller the degree of supercooling, the lower the growth initiation temperature must be.

（７）発明の効果 本発＠１ｌｌＫ係る液相エピタキシャル成長法によって
ＩｎＧａＡｓ層上に四元層ＣＩｎＧａＡｓＰ層）の形成
なしにかつメルトパ、りなしに良好なｔｎｐ　Ｊｌｌが
形成できる。また、形成した（１１１）Ａ面のＩｎＰ層
の表面モ７オロジーは従来の（１００）面のＩｎＰ層の
ものとはｔ！同様に良好であり、（１１１）Ｂ面のＩｎ
Ｐ層に生じることのあるヒルロツクと呼けれる欠陥は生
じない、さらに、（１００）ｆｆｉでの成長で間−とな
るような工、デ（・ｄｇ・ｇｒｏｗｔｈ　）は本発明の
場合には生じない０本発明の場合に１ｆ（１１１）Ａ面
の結晶成長であるためにへき一方向が互に６０℃角度を
なすが、一つのへ１１方向のみを用いることによって平
行なへき開面ｔ−禍するようにへき開できるのでレーデ
−の共振面として利用することができる。このために、
発光素子ふよび受光素子の纏造について（１１１）Ａｉ
のオＵ用は例の一害にもならない。(7) Effects of the Invention By the liquid phase epitaxial growth method according to the present invention, a good tnp Jll can be formed on the InGaAs layer without forming a quaternary layer (CInGaAsP layer) and without melt topper or rinsing. Furthermore, the surface morphology of the formed (111) A-plane InP layer is t! different from that of the conventional (100)-plane InP layer! Similarly good, In of the (111)B plane
Defects called hillocks that sometimes occur in the P layer do not occur, and furthermore, in the case of the present invention, defects such as those that occur during growth at (100)ffi do not occur in the case of the present invention. In the case of the present invention, since the crystal growth is on the 1f (111) A plane, the cleavage directions make an angle of 60° with each other, but by using only one direction in the 11th direction, the parallel cleavage planes t-magnetic Since it can be cleaved in such a way that it can be used as a resonant surface for radar. For this,
Regarding assembly of light emitting element and light receiving element (111) Ai
The use of OU does not cause any harm to the example.

【図面の簡単な説明】[Brief explanation of drawings]

縞１図は、ＩｎＧａＡ口層上に＆相エピタキシャル成長
させたＩｍＰＨＩＩの性状をＩｍＰＪｍ＆長時の冷結装
置とＩｎＰ朧の成長開始温度との関係で示した図で第１
ｆｇＪｌ；ｌ、Ｉ＋ａＧａＡｓ層上に液相エピタキシャ
ル成長させえ１１１層の性状をＩｎ−１’ｉｌｌ［の過
冷却度とＩｎ２層の成長開始温度との関係で示した図で
ある・ ○・−良好に成長した場合 Δ−少しメルトバックが生じた場合 ×・−メルトバックが生じた場合 特許出願人 富士通株式会社 特許出願式通人 弁理士　官　木　　　　朗 弁理士　西　舘　和　之 弁理士　内　１）幸　男 弁１士　　山　　口　　昭　　之 第１耐 ＩｎＰ層の成長開始温度 第２Ｙ！１ １ｎＰ層の成長開始温度Figure 1 shows the properties of ImPHII grown on the InGaA layer by & phase epitaxial growth in terms of the relationship between the ImPJm & long-time cooling device and the growth initiation temperature of InP haze.
This is a diagram showing the properties of the 111 layer grown by liquid phase epitaxial growth on the fgJl;l, I+aGaAs layer in terms of the relationship between the degree of supercooling of In-1'ill and the growth start temperature of In2 layer. When it grows Δ - When a little meltback occurs ×・- When a meltback occurs Patent applicant Fujitsu Ltd. Patent application ceremony Patent attorney Public Patent attorney Akira Ki Kazuyuki Nishidate Patent attorney 1) Yukio The growth starting temperature of the first InP-resistant layer by Akira Yamaguchi, a first-year ben, is the second Y! 1 Growth start temperature of 1nP layer

Claims (1)

【特許請求の範囲】 １、インジウム−ガリウム−に嵩（夏町ψａ８ム―）層
上にインジウム−リン（重態Ｐ）ＩＩ箪を接触させてＩ
ｍｐ層を液相エビタ中シャル成畏させる方法ＫＴｈいて
、前記ＩｎＧａムａｊｌＫは（１１１）ムｗＯものを使
用し、前記Ｉｎｉ’１１１１ｉ［０威長−蛤温駅を５８
０℃以下゛にしかつ過冷却度を１０℃以上にすることを
特徴とするｌ１１１１エビタ會シヤル成長繊。 λ　前記Ｚ聰、−−〜ム・層は（１１１）ム面ＯＩ＋ａ
Ｐ基板を利用して、１ｌｌＩＡエビタ今シヤル成長１せ
て形成することを４１１１とする轡許−求のＩＩＩＩｌ
嬉１項記ｌ！Ｏ成長法。 ３、前記１　ｍ　１−ＸＱａ　ｘム―層は＃ｔ［ｘ−０
，４７であるＩ”ｕＪｌ”（Ｌ４μ−であることを特徴
とすＪ＞４１許■求Ｏ範■Ｉ１１項又は第２項記載の成
長法。[Scope of Claims] 1. I
In the method of forming the mp layer in the liquid phase Evita, the InGa layer is (111) and the InGa layer is (111).
1111 Evita socially grown fiber characterized by having a temperature of 0°C or less and a degree of supercooling of 10°C or more. λ The above Z layer is (111) Mu plane OI+a
4111 request for permission to form 1llIA Evita now using P substrate.
I'm happy! O growth method. 3. The 1 m 1-XQa x layer is #t[x-0
, 47, I"uJl" (L4μ-).
JP57050103A 1982-03-30 1982-03-30 Liquid phase epitaxial growth Pending JPS58168218A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57050103A JPS58168218A (en) 1982-03-30 1982-03-30 Liquid phase epitaxial growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57050103A JPS58168218A (en) 1982-03-30 1982-03-30 Liquid phase epitaxial growth

Publications (1)

Publication Number Publication Date
JPS58168218A true JPS58168218A (en) 1983-10-04

Family

ID=12849736

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57050103A Pending JPS58168218A (en) 1982-03-30 1982-03-30 Liquid phase epitaxial growth

Country Status (1)

Country Link
JP (1) JPS58168218A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5555521A (en) * 1978-10-19 1980-04-23 Fujitsu Ltd Method of epitaxial growth at liquid phase

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5555521A (en) * 1978-10-19 1980-04-23 Fujitsu Ltd Method of epitaxial growth at liquid phase

Similar Documents

Publication Publication Date Title
EP0194495B1 (en) Method of producing sheets of crystalline material
US5362682A (en) Method of producing sheets of crystalline material and devices made therefrom
JP5678092B2 (en) How to reuse a board
CN101295753B (en) Low temperature Au-In-Au bonding method for III-V family compounds
JPH1131864A (en) Crystal growth of low-migration gallium nitride
US5588994A (en) Method of producing sheets of crystalline material and devices made therefrom
JP2002541673A (en) Single crystal film slicing method using ion implantation
US5328549A (en) Method of producing sheets of crystalline material and devices made therefrom
JP3094965B2 (en) Crystal growth method of gallium nitride thick film
JPH02288288A (en) Manufacture of buried hetero-structure laser diode
JPH0297485A (en) Epitaxial growth method of two-dimensional material onto three-dimensional material
Venkatasubramanian et al. High‐quality eutectic‐metal‐bonded AlGaAs‐GaAs thin films on Si substrates
JPS58168218A (en) Liquid phase epitaxial growth
JPS5997595A (en) Liquid phase epitaxial growing method
JP2658493B2 (en) Method for separating epitaxial layer and substrate
JPH0774109A (en) Compound semiconductor substrate and reuse thereof
JPH02290016A (en) Manufacture of semiconductor device
JPH01120011A (en) Inp semiconductor thin film
JPS59129420A (en) Manufacture of compound semiconductor
JP3609840B2 (en) Manufacturing method of semiconductor light emitting device
Kropewnicki et al. Selective wet etching of lithium gallate
JPS6047237B2 (en) Method for manufacturing optical semiconductor devices
JPS62234319A (en) Forming method for hetero-epitaxial thin-film
JPH1135396A (en) Substrate for gallium nitride based crystal growth and its production and use
JPS61276314A (en) Liquid-phase epitaxial growth method of compound semiconductor