JPS58167445A - 半導体被覆用ガラス - Google Patents
半導体被覆用ガラスInfo
- Publication number
- JPS58167445A JPS58167445A JP4794282A JP4794282A JPS58167445A JP S58167445 A JPS58167445 A JP S58167445A JP 4794282 A JP4794282 A JP 4794282A JP 4794282 A JP4794282 A JP 4794282A JP S58167445 A JPS58167445 A JP S58167445A
- Authority
- JP
- Japan
- Prior art keywords
- glass
- powder
- coating
- semiconductor
- sio2
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011521 glass Substances 0.000 title claims abstract description 41
- 238000000576 coating method Methods 0.000 title claims abstract description 21
- 239000011248 coating agent Substances 0.000 title claims abstract description 20
- 239000004065 semiconductor Substances 0.000 title claims description 24
- 239000000843 powder Substances 0.000 claims abstract description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 19
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000000203 mixture Substances 0.000 claims abstract description 9
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims abstract description 6
- 239000000945 filler Substances 0.000 claims abstract description 6
- 229910052844 willemite Inorganic materials 0.000 claims abstract description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 5
- 229910052878 cordierite Inorganic materials 0.000 claims abstract description 5
- 229910052593 corundum Inorganic materials 0.000 claims abstract description 5
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 5
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 5
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 5
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 5
- 229910001845 yogo sapphire Inorganic materials 0.000 claims abstract description 5
- 229910052845 zircon Inorganic materials 0.000 claims abstract description 5
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 claims abstract description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract 4
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Inorganic materials O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 claims description 4
- YEAUATLBSVJFOY-UHFFFAOYSA-N tetraantimony hexaoxide Chemical compound O1[Sb](O2)O[Sb]3O[Sb]1O[Sb]2O3 YEAUATLBSVJFOY-UHFFFAOYSA-N 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims 1
- 238000007789 sealing Methods 0.000 abstract description 11
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 abstract description 8
- 239000000654 additive Substances 0.000 abstract 1
- GHPGOEFPKIHBNM-UHFFFAOYSA-N antimony(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Sb+3].[Sb+3] GHPGOEFPKIHBNM-UHFFFAOYSA-N 0.000 abstract 1
- 238000013329 compounding Methods 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910020489 SiO3 Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Glass Compositions (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4794282A JPS58167445A (ja) | 1982-03-24 | 1982-03-24 | 半導体被覆用ガラス |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4794282A JPS58167445A (ja) | 1982-03-24 | 1982-03-24 | 半導体被覆用ガラス |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58167445A true JPS58167445A (ja) | 1983-10-03 |
| JPS6238301B2 JPS6238301B2 (enrdf_load_stackoverflow) | 1987-08-17 |
Family
ID=12789414
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4794282A Granted JPS58167445A (ja) | 1982-03-24 | 1982-03-24 | 半導体被覆用ガラス |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58167445A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005090502A2 (de) | 2004-03-19 | 2005-09-29 | Ewald Dörken Ag | Mikroschicht mit siloxanen |
| JP2015214479A (ja) * | 2009-06-23 | 2015-12-03 | ショット・アーゲー | 鉛含有耐放射線ガラス及びその製造 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5499118A (en) * | 1978-01-20 | 1979-08-04 | Nippon Electric Glass Co | Glass for coating semiconductor |
| JPS5652805A (en) * | 1979-10-03 | 1981-05-12 | Tanaka Massey Kk | Conductive composition |
| JPS5747742A (en) * | 1980-09-02 | 1982-03-18 | Nippon Electric Glass Co Ltd | Glass for coating and semiconductor device coated with said glass |
-
1982
- 1982-03-24 JP JP4794282A patent/JPS58167445A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5499118A (en) * | 1978-01-20 | 1979-08-04 | Nippon Electric Glass Co | Glass for coating semiconductor |
| JPS5652805A (en) * | 1979-10-03 | 1981-05-12 | Tanaka Massey Kk | Conductive composition |
| JPS5747742A (en) * | 1980-09-02 | 1982-03-18 | Nippon Electric Glass Co Ltd | Glass for coating and semiconductor device coated with said glass |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005090502A2 (de) | 2004-03-19 | 2005-09-29 | Ewald Dörken Ag | Mikroschicht mit siloxanen |
| JP2015214479A (ja) * | 2009-06-23 | 2015-12-03 | ショット・アーゲー | 鉛含有耐放射線ガラス及びその製造 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6238301B2 (enrdf_load_stackoverflow) | 1987-08-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4291146B2 (ja) | 銀導体組成物 | |
| JPS6238300B2 (enrdf_load_stackoverflow) | ||
| WO1993017438A1 (en) | Zinc oxide varistor and production thereof | |
| US4029897A (en) | Glass seal | |
| JPS59174544A (ja) | 半導体被覆用ガラス | |
| JPH06349314A (ja) | 導電性ペースト | |
| US2863782A (en) | Low-melting high-expansion glass | |
| JPH02189813A (ja) | 金属化支持体を含む電気部品および金属化ペースト | |
| WO2001090012A1 (fr) | Composition de verre et materiau de formation de verre comprenant cette composition | |
| JPS58167445A (ja) | 半導体被覆用ガラス | |
| US3420683A (en) | Low melting glass | |
| CA1250602A (en) | Sealing glass composite | |
| JPH0372023B2 (enrdf_load_stackoverflow) | ||
| JP2001118427A (ja) | 厚膜電極ペースト | |
| JPS6341861B2 (enrdf_load_stackoverflow) | ||
| JP2001322831A (ja) | オーバーコートガラス及び厚膜印刷基板 | |
| SU1418301A1 (ru) | Стекло дл резисторов | |
| GB2052474A (en) | Liquid Crystal Display Element | |
| JPH0558201B2 (enrdf_load_stackoverflow) | ||
| JPS60103050A (ja) | 封着用ガラス組成物 | |
| JP3157695B2 (ja) | 低温封着用組成物 | |
| JP2957087B2 (ja) | 低温封着用組成物 | |
| JPS6146420B2 (enrdf_load_stackoverflow) | ||
| JPH0239411A (ja) | セラミックコンデンサ端子電極用導電性組成物 | |
| JPS607732A (ja) | 半導体被覆用ガラス |