JPS58166832A - Integrated circuit device - Google Patents

Integrated circuit device

Info

Publication number
JPS58166832A
JPS58166832A JP57049774A JP4977482A JPS58166832A JP S58166832 A JPS58166832 A JP S58166832A JP 57049774 A JP57049774 A JP 57049774A JP 4977482 A JP4977482 A JP 4977482A JP S58166832 A JPS58166832 A JP S58166832A
Authority
JP
Japan
Prior art keywords
circuit
signals
signal
series
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57049774A
Other languages
Japanese (ja)
Inventor
Yasushi Sato
寧 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP57049774A priority Critical patent/JPS58166832A/en
Publication of JPS58166832A publication Critical patent/JPS58166832A/en
Pending legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008Arrangements for reducing power consumption
    • H03K19/0013Arrangements for reducing power consumption in field effect transistor circuits

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To decrease the power consumption, by connecting plural MOS transistors between a potential and an output of one side along with MOS transistors connected opposite to other MOS transistors between a potential and an output of the other side and then applying signals of phases opposite to each other to the gates. CONSTITUTION:MOS transistors TR11 and TR12 are connected in series, and input signals A1 and B1 are applied to the gates of these MOSTRs, respectively. Then the source side of the series circuit is earthed to form a circuit 1. MOSTRT13 and TRT14 are connected in parallel to the drain side of the circuit 1, and the drain side and the source side are connected to a power supply VDD and the drain side of the circuit 1 respectively to form a circuit 2. Then signals A1 and B1 and signals -A1 and -B1 of opposite phases to the signals A1 and B1 are applied to the gates of the TRT13 and TRT14, respectively. The joint of the circuits 1 and 2 is defined as an output terminal OUT1 of an NAND gate. When both signals A1 and B1 are set at 0 or one of these two signals is 0, the OUT1 is cut off from an earth potential and delivers logic 1. Both A1 and B1 are set at 1, the VDD is separated from the OUT1. Thus the OUT1 is set at logic 0. As a result, no DC current flows to the earth from the VDD. This decreases the power consumption.

Description

【発明の詳細な説明】 〔発Q+ 17J軌術盆野〕 この発 は チャンネルM08トランジスタによって構
成される集積回路装置c%lする◎〔発明の技術的背景
〕 1.1高速動作で集積密度も高く、消費電力もさほど大
きくない論理回路装置として、単チャンネルM08トラ
ンジスタ構成の論理集積回路製麹か広く使われている。
[Detailed description of the invention] [Basic Q+ 17J Orbital Bonno] This device is an integrated circuit device consisting of channel M08 transistors. [Technical background of the invention] 1.1 High-speed operation and high integration density As a logic circuit device that does not consume much power, a logic integrated circuit device with a single channel M08 transistor structure is widely used.

こういった単チャンネルのM08トランジスタ(以下M
L)8Tと記す)による論理集積回路のテンドゲートは
、従来例えば第1図、第2因或は第3因に示すよう一:
構成されている・すなわち、ゲート電極AおよびBt二
それぞれ入力信号が供給されたエンハンスメント型MO
8TaJおよび台、を直列接続して駆動部YM成し、そ
のソース側の一端を接地してドレイン側となっている他
端には負荷用のディプレッション型M(J8T・Dを接
続し、この負荷用のML)8T”Dt’介して電源電位
vDDf与える・そして、この負荷用MO8T・Dと駆
動側のMO&T−Mlの接続点を出力端0υTとする・
上記負荷用MO8TI−示すよう6二外部より適当な電
圧VGGt’印加する場合などがある・ まず、駆動部のMO8T−Iil、および台3の少なく
とも一方の入力端に低レベルの信号(以下”0#の伯峙
と記す)が入力した場合、“01信号の入力したエンハ
ンスメント型の駆動用MO8T−J或はMos’r−a
、がオフとなり、出力端0υTcは電源Vnnの電圧す
なわち“l”の信号が出力される。一方入力端A、およ
びA、C同時1:信号“l′が入力すると、駆動側のM
O8T−T、およびT、が同時I:オンし、接地電位と
出力端L)LITとが導通して、出力端0LITより“
o”@@を出力する・ このとき、負荷用MLJ&T−Dが!Jll!vおよび
桑3VのようC;ゲート電極Cニ一定の正の電圧が与え
られる場合、ディプレッション型ML)8T・Dが常時
オン状態となっているため1w源電位Vnnから接地電
位へ直流電流が流れることgユなる・ さらにたとえ第2内に示すようC二、負荷用MO8T−
Dノゲート電極c;コのM(J8Tのソース電位を与え
るようにして駆動側のAiU8TΦEIおよびE、が導
通状態になったときには上記負荷用MLI8T−Dのゲ
ート電極砿:@o“信号の電圧(接地電位)が与えられ
るようにしたとしてモ、ティプレッション型の負荷用M
O8T@Dはオフ状態1:なり切れず、やはり無駄I:
ナンドゲヤト内を直流電流が流れてしまう。
These single channel M08 transistors (hereinafter referred to as M
A tend gate of a logic integrated circuit based on L) 8T) has conventionally been used as shown in FIG. 1, second factor, or third factor:
In other words, an enhancement type MO is configured, that is, the gate electrodes A and Bt are each supplied with input signals.
8TaJ and the stand are connected in series to form a drive unit YM, one end of which is grounded on the source side and the other end is the drain side, and a depletion type M (J8T/D) for load is connected to the drive unit YM. Apply the power supply potential vDDf through the load MO8T/D and the drive side MO&T-Ml as the output terminal 0υT.
As shown in the above load MO8TI-62, there are cases where an appropriate voltage VGGt' is applied from the outside. First, a low level signal (hereinafter referred to as "0 When input is indicated as "#", "01 signal is input to enhancement type drive MO8T-J or Mos'r-a".
, is turned off, and the output terminal 0υTc outputs the voltage of the power supply Vnn, that is, the "1" signal. On the other hand, input terminal A, and A, C simultaneous 1: When signal "l" is input, M on the driving side
O8T-T and T are turned on at the same time, the ground potential and the output terminal L)LIT are electrically connected, and the output terminal 0LIT is turned on.
o”@@ At this time, when the load MLJ&T-D is !Jll!v and a constant positive voltage is applied to the gate electrode C, the depletion type ML) 8T・D is Since it is always on, a DC current will flow from the 1W source potential Vnn to the ground potential.Furthermore, as shown in Part 2, the load MO8T-
When AiU8TΦEI and E on the drive side become conductive by applying the source potential of J8T, the gate electrode of the load MLI8T-D: @o" signal voltage ( M for a depression type load
O8T@D is in OFF state 1: Cannot be achieved, still useless I:
Direct current flows through Nandgeyat.

第4図C二は、ノアゲートの構成例を示すのすなわち、
ゲート電極に入力信吟A′およびB′がそれぞれ入力さ
れたエンハンスメント型の駆動用Mus’r−baおよ
び8番を接地電位と出力端LOUT間C−並列接続し、
この並列接続点すなわち出力端0[JTと電源電位Vl
)10間6;常時導通状態の負荷用MO8T・DV接続
する◎このような回路C二おいて、入力信号A′および
B′のいずれか一一輪理レベル“1″が立つと、信号”
l”の供給された駆動用Mυ8T・がオン状態となり、
常時導通状態の負荷用Mo8T−Dv介して、電源電位
VDDから接地電位へ無駄な直流電流が流れることとな
る・同様(:、他の論理ゲート回路も、入力信号がゲー
ト電極≦;供給された複数のMo8Tを直列接続、並列
接続あるいは直並列接続してWk理に従ってオンオフす
る駆動部を接地電位と出力端間C;構成し、この出力端
と電源電位VDDとの間−二テイプレツションIMMU
8Tによる負荷を接続した構成となっている・ 〔背景技術の問題点〕 このため、単チャンネルMO8T4;よる論111gJ
路では、前記したようi:論理レベルI:よっては駆動
用MO8Tt−介して無駄な直流電流が流れ。
Figure 4 C2 shows an example of the configuration of Noah Gate, namely:
Enhancement type driving Mus'r-ba and No. 8, each of which has input signals A' and B' inputted to the gate electrodes, are connected in parallel between the ground potential and the output terminal LOUT,
This parallel connection point, that is, output terminal 0 [JT and power supply potential Vl
) Between 10 and 6; Connect the MO8T and DV for the load which are always in a conductive state. ◎ In such a circuit C2, when either input signal A' or B' reaches the level "1", the signal "
The drive Mυ8T・ supplied with “l” becomes on state,
A wasteful DC current will flow from the power supply potential VDD to the ground potential through the load Mo8T-Dv, which is always in a conductive state.Similarly (:, other logic gate circuits also have an input signal supplied to the gate electrode ≦; A drive unit that connects multiple Mo8Ts in series, in parallel, or in series-parallel to turn on and off according to the Wk principle is constructed between the ground potential and the output terminal, and between this output terminal and the power supply potential VDD - two-tap tension IMMU.
It has a configuration in which a load of 8T is connected. [Problems with the background technology] For this reason, the single channel MO8T4;
In the path, as described above, i: logic level I: Therefore, a wasteful DC current flows through the driving MO8Tt-.

消費電力が高いという欠点がある。It has the disadvantage of high power consumption.

この欠点のため、集積回路ではパッケージ熱耐量等の問
題から構成規模も制限され、動作速度1:も悪影譬があ
り、今後とも集積回路礪:おける論理規模が拡大する傾
向の中で、何らかの改善が必要であった。
Due to this drawback, the size of integrated circuits is limited due to problems such as package heat resistance, and the operating speed is also adversely affected, and as the logic scale of integrated circuits continues to expand, some Improvement was needed.

〔発明の目的〕[Purpose of the invention]

この発明は上記のような点−二艦みなされたもので、消
費電力の低減された単チャンネルMLI8T構成の集積
回路装at’提供しようとするものである。
The present invention is considered to be similar to the points mentioned above, and is intended to provide an integrated circuit device at' having a single channel MLI8T configuration with reduced power consumption.

〔発明の概要〕[Summary of the invention]

すなわちこの発明に係る集積回路装置kは、単チャンネ
ルMO8T構成のmmb路において、ゲート入力信号の
論理状態こよりオンオフ動作をする駆動部の負荷として
従来のディプレッション型MO8Tを用いずに、駆動部
を構成する複数のM08Tそれぞれに供給されるゲート
電極への入力信号と全く逆相の信号をゲート電極の入力
信号とされた複数のM(J8T4.直列、並列および直
並列の接続関係を対応して逆−一なるようC:接続して
、オンオフ動作が全(逆となるように構成した回路を使
用し、出力信号レベルの如何にかかわらず、この論理回
路内で一万の電源から他方の電源へ直流電流が流れるこ
とがないようIニジたものである。
That is, in the integrated circuit device k according to the present invention, in the mmb path having a single channel MO8T configuration, the driving section is configured without using the conventional depletion type MO8T as a load of the driving section that turns on and off based on the logic state of the gate input signal. A signal of completely opposite phase to the input signal to the gate electrode supplied to each of the plurality of M08Ts is used as the input signal to the gate electrode of the plurality of M08Ts (J8T4. - C: Connect so that the on-off operation is all (reverse), and use a circuit configured so that the on-off operation is the opposite, and regardless of the output signal level, from one power supply to the other power supply within this logic circuit. It is designed to prevent direct current from flowing.

〔発明の実施例〕[Embodiments of the invention]

以下e[il参照してこの発明の一実施例Cつき脱明す
る・第5 k t:示すものは2人力ナンドゲートの一
例でエンハンスメント型のN型MLJaT≦−より構成
する・まず、$1およびI!2のMo8T11および1
2のそれぞれのゲート電極に入力端A、、B、より入力
ゲート信号を供給し、このm1jdよびW!2のMo8
T11.1zVii列撥続し、この直列回路のソース側
を接地して襖lの回路Jv構成する。なお、以下、入力
端A。
An embodiment of the present invention will be explained below with reference to e I! 2 Mo8T11 and 1
An input gate signal is supplied from input terminals A, , B to each gate electrode of m1jd and W! 2 Mo8
T11.1zVii are connected in series, and the source side of this series circuit is grounded to form a sliding door circuit Jv. In addition, the input terminal A is hereinafter referred to as input terminal A.

およびB、c与えたゲート信号をそれぞれ信号A、およ
びB、と表記する方法をとる・この直列接続された一組
のML18Tj J 、 J jの他端、すなわち1#
SlのMU8TJJのドレインC二は、それぞれThl
および第2のM(J8TJ l 。
The gate signals given by B and C are expressed as signals A and B, respectively.The other end of this series-connected pair of ML18Tj, Jj, that is, 1#
The drain C2 of MU8TJJ of Sl is Thl, respectively.
and the second M (J8TJ l.

IJのゲートに与えた信号A、およびB、と逆相の信号
A、およびBzt’ゲート電極g:与えた第3およびt
i44のMU8TJ j 、J 4の並列1路を接続す
る・そして、この並列回路を@2の回路2とし、この第
2の回路2に電源VDDを供給して、I82の回路2と
、第1の回路との接続点をナントゲートの出力端L)[
JT、として、信号を取り出す・ ここで、前記したようC:、第1のML)8TJJのゲ
ート電極I:は信号Aが1.第2のMLI8TJJ感;
は信号Bが、第3のMO8TJ Jには信号Aがそして
W&4のML18TJ4(ユは信号Bがそれぞれ与えら
れる・今、電源電位VDDv正として1回路閾値電圧よ
り高い電圧信号を正論理で°1’とし、接地電位を°O
aとすると各入力信号AおよびBの組み合わせI:対す
る出力状態は次表のようになる。
Signals A and B given to the gates of IJ, and signals A and B in opposite phase; gate electrode g: third and t given;
Connect one parallel circuit of i44's MU8TJ j and J4. Then, make this parallel circuit @2's circuit 2, supply power VDD to this second circuit 2, and connect I82's circuit 2 and the first The connection point with the circuit is connected to the output terminal L) of the Nantes gate.
Take out the signal as JT.Here, as mentioned above, the gate electrode I: of the first ML)8TJJ is connected to the signal A when the signal A is 1. Second MLI8TJJ feeling;
signal B is applied to the third MO8TJ, signal A is applied to the third MO8TJJ, and signal B is applied to the ML18TJ4 of W&4.Now, as the power supply potential VDDv is positive, a voltage signal higher than the threshold voltage of one circuit is applied with positive logic. ', and the ground potential is °O
Assuming that a is the output state for the combination I of each input signal A and B, the following table shows the output state.

例えば、A、H共C;@0”のとき、$1および第2の
MO8TI J @ 72はいずれもオフ状態で。
For example, when both A and H are C;@0'', both $1 and the second MO8TI J@72 are in the off state.

逆にA、Bl:は信号レベル112が与えられており、
集3および第4のMU8TJ J # I−は共1:オ
ン状態となっている・従って、このナントゲート内を電
源VDDから接地点へ直流的に電流が流れることがない
状態で、襖2の回路2を経て。
Conversely, A, Bl: are given a signal level of 112,
Collection 3 and 4th MU8TJ After circuit 2.

電#鴫位VDDが出力端0LIT、へ現われる。The voltage level VDD appears at the output terminal 0LIT.

また、4tsQ4およびBのいずれか一方が11”で他
が“01の場合も同様感−直列接続された弗lおよび第
2のML)8TJ I I 1 jのいずれかがオフ状
態となると共に、並列接続されたfs3および第4のM
O8TJ 3.14のいずれかがオン状態となり、出力
端L)LIT、は接地電位と切り離され電源電位VDD
と接続された状態となって、論理信号゛l”を出力する
・ 一方S信号AおよびBのいずれも°l#の場合は、直列
接続された與lおよび第2のMO8TJJ*J#が共C
:オン状態となり出力端t)LIT。
Similarly, when one of 4tsQ4 and B is 11'' and the other is 01, either of the series-connected ?l and second ML) 8TJ I I 1 j is in the off state, fs3 and fourth M connected in parallel
One of O8TJ3.14 is turned on, and the output terminal L)LIT is disconnected from the ground potential and becomes the power supply potential VDD.
and outputs the logic signal "l". On the other hand, if both S signals A and B are °l#, the serially connected A and the second MO8TJJ*J# are connected together. C
: Turns on and output terminal t)LIT.

は接地電位Vl)Dと4通した状態となる・逆に。is connected to the ground potential Vl)D and vice versa.

並列接続された第3および第4のML)JTI 1 。3rd and 4th ML) JTI 1 connected in parallel.

14はいずれもオフ状態となり、電源電位VDDと出力
端0υT、は切り離された状態となって。
14 are all turned off, and the power supply potential VDD and the output terminal 0υT are disconnected.

電源電位Vnnから接地電位6:有意な直流電流が流れ
ることはない・ 1! 6 h l二本すものはノア回路の一例で、偽時
A、およびB、をそれぞれのゲート電極I:与えた聰s
ta!び第6(rJMt)8T15 、 I gを並列
接続し、この並判薗MY弗1の回路1とし、そのソース
側を接地する・そして、この並列1路の接地されない他
端C二は、それぞれのゲート電極に、信号A、およびB
、と逆相の信号A、およびB* ’に印加した第7およ
び飽8のMO8T1 F 。
From power supply potential Vnn to ground potential 6: No significant direct current flows. 1! 6 h l The two wires are an example of a NOR circuit, and the false times A and B are connected to each gate electrode I:
Ta! and No. 6 (rJMt) 8T15 and Ig are connected in parallel to form circuit 1 of this parallel 1 circuit, and its source side is grounded.The other end C2 of this parallel circuit 1, which is not grounded, is connected in parallel. Signals A and B are applied to the gate electrodes of
, and the seventh and eighth MO8T1 F applied to signals A and B*' having opposite phases.

18の直列回路構成の第2の回路2を接続する・この直
列1路のドレイン側へは、電源電圧VDDt印加し、前
記襖5および第6のML18TJ 5 。
A second circuit 2 having a series circuit configuration of 18 circuits is connected. A power supply voltage VDDt is applied to the drain side of this series circuit, and the sliding door 5 and the sixth ML18TJ 5 are connected.

16の並列1略との接続点を出力端OUT、として信号
を取り出す・ この場合は、信号A、jtfよびB、の少なくともいず
れかが@l”であれば、14Bおよび第6の、MLla
TJ5.7gの少なくともいずれかがオン状態となり、
接地電位と出力端0[JT、とが4通した状態となる・ 一方sAIおよびB、のゲート41号の与えられた鳴7
および−8のMO8TI 7 、J aの直列回路は、
このM(JbTIF 、t aの少なくともいずれかが
オフ状態となって、出力端0υT、と電鍵゛鑵位VDD
とを遮断し、出力信号の論理レベルを“0”とする・ま
た、信号A、およびB、のいずれもが@0″のときは、
逆C二υυT、と接地電位が遮断され、電源電位VDD
と出力端(JU’l’、とが導通し、出力信号の論理は
′11となって。
Take out the signal by using the connection point with the parallel 1 of 16 as the output terminal OUT. In this case, if at least one of the signals A, jtf, and B is @l", 14B and the sixth MLla
At least one of TJ5.7g is turned on,
The ground potential and the output terminal 0 [JT, are connected to each other. On the other hand, the given sound 7 of gate No. 41 of sAI and B,
The series circuit of MO8TI 7 and J a of -8 and -8 is
When at least one of M(JbTIF and ta is turned off, the output terminal becomes 0υT and the electric key position VDD
and set the logic level of the output signal to "0". Also, when both signals A and B are @0'',
With reverse C2 υυT, the ground potential is cut off and the power supply potential VDD
and the output terminal (JU'l') become conductive, and the logic of the output signal becomes '11'.

「1.+Blなる信号な出力する・ 以上2例で示すように。1. Output a signal of +Bl. As shown in the above two examples.

従来の論理回路の駆動部と同様の*理回路vw41の回
路1として構成し、このIllの回路lC;対応して逆
相のゲージ電極信号な与えたMLJ[’区二より、その
直列および並列の接続関係も逆1;した相補的な動作を
する第2の回路1v構成し。
It is configured as the circuit 1 of the logic circuit vw41 similar to the drive section of a conventional logic circuit, and the circuit 1C of this Ill is configured as the circuit 1C of this Ill circuit; A second circuit 1v is constructed which operates in a complementary manner with the connection relationship reversed.

1)41および第2の回路にそれぞれ異なる電位な与え
て、その接總点を出力端とすること5により。
1) By applying different potentials to the circuit 41 and the second circuit, and making their connection point the output terminal 5.

定常動作中は電源間を直流電流が流れないようじするこ
とかできる・ @1@I=示すものは、論理動作が[□1 ・B1゜C
、Jとなる複合論理回路の一例である・信号A、および
B、をゲー)電極6;それぞれ与えたMu8Ts 9u
J、 びMuBTI D vm列接続スルと共に、信号
C畠をゲート電極a:与えたML) 8Tz1をこの直
列回路−二対し1gl1列蟲;接続し、楔lの1ml’
に構成してソース側を接地する・この第1の回路lの接
地されない側の一端z2−二ハ、前記MO8TJ #お
よびML)8T20の直列細路1:対応して、ゲート電
極に信号A、およびB、の与えられたMOaTj 3.
24の並列回路とMLJ8T、? J C対応するC1
の信号がゲート電極1;入力するM(J8Tj Mとを
直列C:接続した第2の回路2を構成して電源電位VD
Dを供給する。
During normal operation, it is possible to prevent DC current from flowing between the power supplies.
, J is an example of a complex logic circuit in which signals A and B are applied to electrode 6;
J, and MuBTI D vm column connection through, signal C field to gate electrode a: given ML) 8Tz1 to this series circuit - 2 pairs to 1gl1 column; connect, wedge 1ml'
One end of the ungrounded side of this first circuit l, z2-2, the series path 1 of the MO8TJ # and ML)8T20: Correspondingly, the gate electrode is connected to the signal A, and B, given MOaTj 3.
24 parallel circuits and MLJ8T,? JC corresponding C1
A signal from the gate electrode 1 is input to the gate electrode 1;
Supply D.

そして、このAH、BsおよびC,の信号が入力する第
2の回t1&1と、A畠 aBgmCB の信号の入力
する躬紀纂1の1路lとの接続点12を、この複合論理
−路の出力端0LIT、とし、信号な取り出すようにす
る・ このような複合論理回路(二おいても、IiJ記2例と
同様C;、出力端OUT、から見て接地電位4:接続す
る第1の回路lと、電#電位VDD(二接続する第2の
回路1とが、各々I:接続する電源な。
Then, the connection point 12 between the second circuit t1 & 1, where the signals of AH, Bs, and C are inputted, and the 1st circuit l of the 1st circuit of the 1st circuit, where the signal of Abata aBgmCB is inputted, is connected to the connection point 12 of this complex logic circuit. The output terminal is 0LIT, and the signal is taken out.Such a complex logic circuit (also in the second case, as in the second example of IiJ), the ground potential 4 as seen from the output terminal OUT: the first connected The circuit I and the second circuit 1 connected to the voltage potential VDD (I: the power supply connected to each other).

出力#1iij!!!レベルl:従って相補的に導通遮
断するため−;、無駄な直流電流が電源電位VDDと接
地電位間−;流れずg;動作する・ なお、この実施例では、ナンド回路、ノア回路および[
A−B+CJの複合論理回路の場合6二つき説明したが
、他の論理回路も同様C;シて構成できることは明らか
である・ 〔発明の効果〕 以上のようC:この発明i:よれば、電源電位から接地
電位間に直流的に流れる電流を殆んどなくシ、消費電力
を著しく低減した単チャンネルMO8トランジスタ構成
の集積回路*1it−提供することができる・
Output #1iij! ! ! Level l: Therefore, conduction is interrupted in a complementary manner; wasteful DC current does not flow between the power supply potential VDD and the ground potential; g: operates.
In the case of the complex logic circuit of A-B+CJ, 6 has been explained, but it is clear that other logic circuits can be similarly constructed using C; [Effect of the invention] As described above, C: According to this invention i: It is possible to provide an integrated circuit with a single-channel MO8 transistor configuration that has almost no direct current flowing between the power supply potential and the ground potential, and has significantly reduced power consumption.

【図面の簡単な説明】[Brief explanation of the drawing]

11!1因〜W44−はそれぞれ従来の集積−路、装!
iな説明する回路−,第5因〜第7蝕はこの発明の一実
施例C;係わる集積−路iii!緻の一実施例を示す(
ロ)路内であるe l・・・11!1の1路、1・・・弗2の[g1路、7
7〜11 、 JJI〜14・・・MO8トランジスタ
。 出−人代理人 弁理土鈴 圧式 彦 第111     第2図 第311     第4図
11!1 factor ~ W44- are respectively conventional accumulation roads and installations!
The circuit to be explained, the fifth factor to the seventh eclipse are an embodiment of the present invention C; related integration circuit iii! A detailed example is shown (
b) In the road e l...11!1 road 1, 1...弗2 [g1 road, 7
7-11, JJI-14...MO8 transistor. Attorney-at-Law Patent Attorney Dosu Hiko No. 111 Figure 2 Figure 311 Figure 4

Claims (1)

【特許請求の範囲】[Claims] ゲート電極に入力信号が与えられ、一方の電位と出力端
との間こ直列接続、並列接続または直並列接続される!
l!1の複数のML)8  )ランジメタと、他方の電
位と出力端との間C;上記複数のトランジスタそれぞれ
1;対応してゲート電極に逆相の信号が与えられ直列、
並列および直並列の接続関係も対応して逆となるよう8
:構成された鴫2の複数のM08トランジスタとt−具
備したことを特徴とする集積(ロ)略装k。
An input signal is given to the gate electrode, and one potential and the output end are connected in series, in parallel, or in series-parallel!
l! 1) 8) Between the range meta and the other potential and the output terminal C; 1 for each of the plurality of transistors; Correspondingly, a reverse phase signal is applied to the gate electrode, and the transistors are connected in series;
8 so that the parallel and series-parallel connection relationships are also correspondingly reversed.
: An integrated (b) schematic arrangement characterized in that it comprises a plurality of M08 transistors and a t-type structure.
JP57049774A 1982-03-27 1982-03-27 Integrated circuit device Pending JPS58166832A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57049774A JPS58166832A (en) 1982-03-27 1982-03-27 Integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57049774A JPS58166832A (en) 1982-03-27 1982-03-27 Integrated circuit device

Publications (1)

Publication Number Publication Date
JPS58166832A true JPS58166832A (en) 1983-10-03

Family

ID=12840512

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57049774A Pending JPS58166832A (en) 1982-03-27 1982-03-27 Integrated circuit device

Country Status (1)

Country Link
JP (1) JPS58166832A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6211321A (en) * 1985-07-09 1987-01-20 Matsushita Electric Ind Co Ltd Cmos logical gate
FR2646740A1 (en) * 1989-05-08 1990-11-09 Mitsubishi Electric Corp LOGIC CIRCUIT WITH A COMPLEMENTARY FUNCTIONING FUNCTION

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6211321A (en) * 1985-07-09 1987-01-20 Matsushita Electric Ind Co Ltd Cmos logical gate
FR2646740A1 (en) * 1989-05-08 1990-11-09 Mitsubishi Electric Corp LOGIC CIRCUIT WITH A COMPLEMENTARY FUNCTIONING FUNCTION

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