JPS58166723A - Transfer device for pattern - Google Patents

Abstract

PURPOSE:To obtain desired patterns simply, to transfer patterns without using a photo-mask and to improve the accuracy of superposing of each pattern by forming a generating source of stimulus beams forming patterns by a plurality of minute unit generating sources and arranging the generating sources in plane shape and selectively driving desired unit generating sources. CONSTITUTION:A micro-computer 17 each brings several switch of a switch 15 group to ON or OFF state independently on the basis of pattern informations, and lights corresponding light-emitting elements 14. Consequently, light patterns are formed in the stimulus beam generating source 10 by the light-emitting elements lit, and the patterns are imaged onto the surface of the resist 13 of a wafer substrate 12 by an optical system 11. Accordingly, the patterns are transferred completely. When the forms of the patterns are to be altered, the switch 15 group may be changed over and operated accordingly.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a pattern transfer device that is effective for use in manufacturing semiconductor integrated circuit devices.

When manufacturing semiconductor integrated circuit devices, a butter 7 transfer device is required which irradiates a resist-coated wafer substrate with light and electron beams in a predetermined pattern. Conventionally used devices of this type utilize a photomask as shown in FIG. do. The photomask 4 has light transmitting parts or non-light transmitting parts formed in a predetermined pattern, and therefore, the light beam transmitted through the photomask 4 forms a photomask image of the pattern on the wafer substrate 6 coated with the resist 5. . In this case, the photomask 4 and the wafer substrate 6
An optical system may be interposed between the two.

However, the pattern transfer device with such a configuration
In this case, a different photomask must be prepared for each different transfer pattern, and since an extremely large number of transfer patterns are normally required for the construction of a semiconductor integrated circuit device, the photomask becomes contaminated with mold and mildew. , the number of man-hours and costs required to produce the photomasks become extremely large, and the management of each photomask also becomes troublesome. In addition, when using several photomasks, the alignment accuracy (overlay accuracy) of each photomask is an important factor, but it becomes difficult to ensure this accuracy in proportion to the number of photomasks. There are also problems.

Therefore, an object of the present invention is to form a stimulus beam such as light or an electron beam for forming a pattern by a plurality of microscopic focal point generating sources, and to arrange these focal point generating sources in a planar manner. By configuring the system so that the desired unit sources can be selectively driven, a desired pattern can be obtained by selectively driving these focal point sources, and therefore pattern transfer can be performed without using a photomask at all. The object of the present invention is to provide a pattern transfer device that can eliminate various problems related to the production and management of photomasks.

Hereinafter, the present invention will be explained with reference to illustrated embodiments.

FIG. 2 is a perspective view of an embodiment of the present invention, and FIG. 3 is an enlarged sectional view of a part thereof. Optical system, 12
is a wafer substrate whose surface is coated with resist 13.

The stimulation beam generation #10 includes a plurality of (many) minute light emitting elements (for example, light emitting diodes, etc.) as focal point generation sources.
14 are arranged in a plane and in a grid pattern, and each light emitting element 1
4 has switches 15 that are independently turned on and off.
and is connected to a power source 16 via this switch 15. In this case, the switches 15 are turned on and off by the micro combinator 17, respectively. Therefore, in this stimulation beam generation #10, each light emitting element 14 is independently turned on or off by turning on or off the switch 15 arbitrarily and independently, and thereby the light emitting element as a unit source can be turned on or off as required. A lighting pattern (or a lighting-off pattern) is formed.

According to the above configuration, when required pattern information is input to the microcomputer 17, the microcomputer independently turns on or off each switch of the switch group 15 based on the information. Then, the light emitting element 14 corresponding to the switch shaped like an axle is turned on. This results in
A bright pattern is formed by the light-emitting element that is turned on at residual beam generation #10, and this pattern is imaged by the optical system 11 on the surface of the resist 13 of the wafer substrate 12, thereby transferring the pattern. is completed.

In addition, when changing the putter/shape, the switch 1
If the ON/OFF state of each of the LEDs 5 is independently switched again, the light emitting elements to be lit will be changed, and the lighting pattern will be changed.

Therefore, if this stimulation beam generation filO is turned on, the desired butter can be formed by the planar generation source itself and imaged onto the wafer substrate 12, so patterns of various shapes can be transferred by switching. This can be done simply by switching. This eliminates the need to prepare multiple photomasks and allows photomask production.

Various problems related to management can be resolved. In addition, with this device, as long as the wafer substrate 12 is placed in a predetermined position, the stimulation beam generation #10 can be checked by keeping its relative positional relationship constant. Can be done.

FIG. 4 shows another embodiment of the invention, in particular a different example of the stimulation beam source. In this embodiment, a common electrode 19 and a plurality of microelectron guns 20 are installed in a housing 18 that maintains a vacuum state inside.
The microelectron guns 20 are arranged facing each other, and the microelectron guns 20 are arranged in a grid pattern, each of which is connected to a switch 21, and connected to a high voltage $22 via this switch 21. According to this stimulation beam generation ILK, by selectively and independently turning on and off the switch 21, the corresponding microelectron gun 2
An electron beam can be generated between the wafer substrate 12 and the common electrode 19, and the surface of the resist 13 of the wafer substrate 12 can be directly irradiated with this electron beam. Therefore, in this device, by selectively operating the switch 21, an electron beam is generated from the selected one of the planar microelectron guns, and a pattern consisting of a bundle of electron beams is formed to complete pattern transfer 1. It can be done.

Note that an ion beam or other sources may be used as the stimulation beam generation source. Further, in each of the embodiments described above, the generation g1 is formed in a flat shape, but it may be formed in a curved shape in order to reduce the aberration of the projection optical system. Furthermore, if a reduction lens is used as the projection optical system, a practically sufficient transfer pattern can be obtained even if the focal point source is formed roughly, and the source can be manufactured easily.

As described above, according to the pattern transfer apparatus of the present invention, the generation source of the stimulation beam such as light or electron beam for pattern formation is formed by a plurality of minute basic sources, and these unit sources are Since the structure is arranged in a planar manner and the desired position sources can be selectively driven, it is possible to easily obtain a desired pattern by selectively driving these unit sources. Pattern transfer can be performed even without using a photomask, thereby making it possible to eliminate various problems related to the production and management of photomasks, and to improve the overlay accuracy of each pattern.

[Brief explanation of drawings]

FIG. 1 is a block diagram of a conventional apparatus, FIG. 2 is a block diagram of the apparatus of the present invention, FIG. II3 is a sectional view of the main part, and FIG. 4 is a block diagram of another embodiment. 10... Stimulation beam generation source, 11... Optical system, 12
...Wafer substrate, 14...Light emitting element (Position occurrence 1
j), 15... switch, 16... power supply, 17...
・Micro combinator, 19... common electrode, 20・
...Microelectron gun, 21...Switch, 22...High voltage power supply. Figure 1 Figure 2 Figure 3 Figure 4

Claims (1)

[Claims] 1. In a pattern transfer device that forms a pattern by irradiating a stimulus beam onto a substrate such as a wafer, the source of the stimulus beam, such as light or electrons, is generated in several minute units. 1. A pattern transfer device characterized in that the pattern transfer device is formed by a source, and is configured to be able to selectively drive a desired unit generation decrease after arranging unit generation II of parentheses t et al. in a planar manner. 2. The pattern transfer device according to claim 1, which is formed by arranging unit sources in a grid pattern.