JPS5816616B2 - semiconductor equipment - Google Patents
semiconductor equipmentInfo
- Publication number
- JPS5816616B2 JPS5816616B2 JP53149287A JP14928778A JPS5816616B2 JP S5816616 B2 JPS5816616 B2 JP S5816616B2 JP 53149287 A JP53149287 A JP 53149287A JP 14928778 A JP14928778 A JP 14928778A JP S5816616 B2 JPS5816616 B2 JP S5816616B2
- Authority
- JP
- Japan
- Prior art keywords
- thermal expansion
- coefficient
- semiconductor substrate
- electrode
- synthetic resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 239000000463 material Substances 0.000 claims abstract description 8
- 229920003002 synthetic resin Polymers 0.000 claims description 27
- 239000000057 synthetic resin Substances 0.000 claims description 27
- 229910052721 tungsten Inorganic materials 0.000 claims description 11
- 239000010937 tungsten Substances 0.000 claims description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- 239000000835 fiber Substances 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 8
- 239000002131 composite material Substances 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 2
- 239000000853 adhesive Substances 0.000 claims 1
- 230000001070 adhesive effect Effects 0.000 claims 1
- 230000002457 bidirectional effect Effects 0.000 claims 1
- 230000002093 peripheral effect Effects 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 abstract description 9
- 239000010703 silicon Substances 0.000 abstract description 9
- 239000003822 epoxy resin Substances 0.000 abstract description 7
- 229920000647 polyepoxide Polymers 0.000 abstract description 7
- 229920000049 Carbon (fiber) Polymers 0.000 abstract description 5
- 239000004917 carbon fiber Substances 0.000 abstract description 5
- 229920005989 resin Polymers 0.000 abstract description 4
- 239000011347 resin Substances 0.000 abstract description 4
- AHADSRNLHOHMQK-UHFFFAOYSA-N methylidenecopper Chemical compound [Cu].[C] AHADSRNLHOHMQK-UHFFFAOYSA-N 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 239000011521 glass Substances 0.000 description 7
- 229910002804 graphite Inorganic materials 0.000 description 7
- 239000010439 graphite Substances 0.000 description 7
- 229920002379 silicone rubber Polymers 0.000 description 5
- 239000004945 silicone rubber Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 229920000742 Cotton Polymers 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
- H01L23/4924—Bases or plates or solder therefor characterised by the materials
- H01L23/4928—Bases or plates or solder therefor characterised by the materials the materials containing carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
- H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Die Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は半導体装置に係り、特に合成樹脂にて外被を施
す半導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor device, and more particularly to a semiconductor device having an outer covering made of synthetic resin.
半導体装置では、半導体素子を外部雰囲気の影響及び外
力から保護するため、及び沿面距離を長く確保して高い
絶縁電圧を得るために、半導体素子を金属−セラミック
複合ケースに収納したり、合成樹脂或いはガラス等の絶
縁性物質で包囲外被したりしている。In semiconductor devices, semiconductor devices are housed in metal-ceramic composite cases, or in synthetic resin or synthetic resin cases, in order to protect semiconductor devices from the influence of the external atmosphere and external forces, and to ensure long creepage distances and obtain high insulation voltage. It is surrounded by an insulating material such as glass.
その中でも合成樹脂で外被する方法は比較的簡単にでき
るため、低価格の半導体装置に向いている。Among these methods, the method of enveloping with synthetic resin is relatively simple and is suitable for low-cost semiconductor devices.
と如わけ小面積の半導体素子の両面にＳ字形のリード線
を半田付けし、半導体素子とリード線を合成樹脂で包囲
した装置は安価な装置の代表例である。A device in which S-shaped lead wires are soldered to both sides of a small-area semiconductor element and the semiconductor element and lead wires are surrounded by synthetic resin is a typical example of an inexpensive device.
しかしながら、電流容量の大きい半導体装置を合成樹脂
で包囲外被した装置は工業ベースで実現していない。However, a device in which a semiconductor device with a large current capacity is surrounded and coated with synthetic resin has not been realized on an industrial basis.
その理由のひとつは、半導体基板、電極材料および合成
樹脂の熱膨張特性がうまく噛み合わないことにある。One reason for this is that the thermal expansion characteristics of the semiconductor substrate, electrode material, and synthetic resin do not mesh well.
大面積牛導体素子に対する電極片は、熱膨張量の差異が
無視できないことから、熱膨張係数が半導体基板の熱膨
張係数に合致していることを必要とする。Since the difference in the amount of thermal expansion of an electrode piece for a large-area conductor element cannot be ignored, the coefficient of thermal expansion must match that of the semiconductor substrate.
そこで熱膨張係数が半導体基板に近似した材料、例えば
シリコンに対してならタングステンを用いることになる
。Therefore, for example, tungsten is used for silicon, which has a coefficient of thermal expansion similar to that of the semiconductor substrate.
合成樹脂の熱膨張係数はタングステンに比べて約１０倍
大きいので、シリコン−タングステン組み立て物を合成
樹脂で包囲すると、合成樹脂の硬化加熱冷却後ではシリ
コン−タングステン組み立て物には合成樹脂で締めつけ
られるような力が働く。The coefficient of thermal expansion of synthetic resin is approximately 10 times larger than that of tungsten, so if a silicone-tungsten assembly is surrounded by synthetic resin, the silicone-tungsten assembly will be able to be tightened with the synthetic resin after the synthetic resin has hardened, heated, and cooled. A force is at work.
この場合、タングステンと合成樹脂の間に隙間はできな
いが、シリコン−タングステン複合物の軸方向で見るな
ら、タングステンと合成樹脂の熱膨張量の差異により、
タングステンと合成樹脂の間に滑りがおき、両者の間の
密着性が妨げられる。In this case, there is no gap between the tungsten and the synthetic resin, but when viewed in the axial direction of the silicone-tungsten composite, due to the difference in thermal expansion between the tungsten and the synthetic resin,
Slippage occurs between the tungsten and the synthetic resin, impeding the adhesion between them.
本発明の目的は、上記の不都合を解決して合成樹脂で包
囲外被した半導体装置、特に大型の半導体装置を提供す
るにある。SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned disadvantages and provide a semiconductor device, particularly a large-sized semiconductor device, which is covered with a synthetic resin.
本発明による半導体装置の特徴とするところは、電極片
の熱膨張係数を、半導体基板と接着する面に平行な方向
では半導体基板と合致させ、上記と垂直な方向では合成
樹脂と合致させた点にあり、斯様な性質の電極片は銅−
炭素繊維複合材で製造することができる。The semiconductor device according to the present invention is characterized in that the coefficient of thermal expansion of the electrode piece is made to match that of the semiconductor substrate in the direction parallel to the surface to be bonded to the semiconductor substrate, and to match that of the synthetic resin in the direction perpendicular to the above. The electrode piece with such properties is made of copper.
Can be manufactured from carbon fiber composite material.
以下、図面を参照し、実施例により本発明の詳細な説明
する。Hereinafter, the present invention will be described in detail by way of examples with reference to the drawings.
第１図は、半導体基板と電極片の組み立て前の状況を説
明する分解断面図である。FIG. 1 is an exploded sectional view illustrating the state of the semiconductor substrate and the electrode piece before they are assembled.
１はシリコンで、周辺部に整流接合端を内壁面に現わす
モート２を有し、前記モート２の中にはパッシベーショ
ン用ガラス３を焼結しである。Reference numeral 1 is made of silicon and has a moat 2 at its periphery with a rectifying joint end appearing on the inner wall surface, and a passivation glass 3 is sintered inside the moat 2.
４と５はオーミックコンタクトで、本例ではニッケル膜
である。4 and 5 are ohmic contacts, which in this example are nickel films.
６は上部電極片、８は下部電極片で、夫々銀メッキ７及
び９を有し、後述するような熱膨張異方性をもった材料
で構成される。6 is an upper electrode piece, and 8 is a lower electrode piece, which has silver plating 7 and 9, respectively, and is made of a material having thermal expansion anisotropy as described later.
上部電極片６及び下部電極片８の矢印Ｂ方向−すなわち
シリコン１の面方向での熱膨張係数は４Ｘ１０ ’／
’Ｃであり、矢印Ａ方向での熱膨張係数は１８Ｘ１０−
６／℃である。The coefficient of thermal expansion of the upper electrode piece 6 and the lower electrode piece 8 in the direction of arrow B - that is, in the plane direction of the silicon 1 is 4X10'/
'C, and the coefficient of thermal expansion in the direction of arrow A is 18X10-
6/℃.
このような異方性を有する電極片の材料としては、第２
図に示すような銅−炭素繊維複合材が適している。As the material of the electrode piece having such anisotropy, the second
A copper-carbon fiber composite material as shown in the figure is suitable.
これは直径数ミクロンの黒鉛繊維を同心円状または中央
にうず巻中心を持つうす巻き状に配置し、黒鉛繊維間は
銅で充填した構造で、本例では黒鉛と銅の容量比は３０
（黒鉛）： ７０（銅）である。This is a structure in which graphite fibers with a diameter of several microns are arranged concentrically or in a thinly wound shape with a spiral center in the center, and the spaces between the graphite fibers are filled with copper. In this example, the capacity ratio of graphite and copper is 30.
(Graphite): 70 (copper).
その製造は、銅メッキを施した黒鉛繊維を巻いた巻糸状
物に所要量の銅粉を含浸させ、ホットプレス装置で、熱
間加圧して固め、その後所要形状に機械加工して行なう
ことができる。It can be manufactured by impregnating a spool of copper-plated graphite fiber with the required amount of copper powder, hardening it by hot pressing in a hot press machine, and then machining it into the desired shape. can.
かかる構造の電極片は同心円状またはうす巻き状に配置
した熱膨張係数の小さな黒鉛繊維の束縛のために主面と
平行な方向（Ｂ方向）の熱膨張係数は小さく、黒鉛繊維
の束縛の少ない厚さ方向（Ａ方向）の熱膨張係数はＢ方
向より大きくなる。Electrode pieces with such a structure have a small coefficient of thermal expansion in the direction parallel to the main surface (direction B) due to the binding of graphite fibers with a small coefficient of thermal expansion arranged in concentric circles or thinly wound shapes, and the binding of the graphite fibers is small. The coefficient of thermal expansion in the thickness direction (A direction) is larger than that in the B direction.
なお、前記炭素繊維の代シにタングステンやアンバーな
どの繊維を用いることもできる。Note that fibers such as tungsten and amber can also be used in place of the carbon fibers.
第１図に戻り、１０及び１１は半田である。Returning to FIG. 1, 10 and 11 are solder.
第１図に示す諸材料を上下の順序を変えずに積み重ね、
加熱することによりシリコン１を電極片６及び８に接着
挾持した半組立品ができる。Stack the materials shown in Figure 1 without changing the order of the top and bottom,
By heating, a semi-assembly product in which the silicon 1 is adhesively sandwiched between the electrode pieces 6 and 8 is produced.
第３図は前述のようにして作られた半組立品の周囲に樹
脂を包囲外被した構造を示す断面図である。FIG. 3 is a sectional view showing a structure in which a resin is encased around the subassembly made as described above.
１２はシリコン１のモート２に焼結したガラス３の上に
焼き付けたシリコーンゴムである。12 is a silicone rubber baked onto a glass 3 sintered to a moat 2 of silicon 1.
１３はエポキシ樹脂で、鋳型（図示せず）を用いて注入
成型したもので、１８０℃の加熱を施して硬化しである
。Reference numeral 13 is an epoxy resin, which is injection molded using a mold (not shown), and is cured by heating at 180°C.
そして、このエポキシ樹脂の熱膨張係数は２５ Ｘ １
０−６／’Ｃである。The coefficient of thermal expansion of this epoxy resin is 25 x 1
It is 0-6/'C.
シリコーンゴム１２はクッション材硬化したエポキシ樹
脂１３がガラス３に直接触れてガラス３を損傷しないよ
うにするためのバッファの働きをする。The silicone rubber 12 functions as a buffer to prevent the hardened epoxy resin 13 of the cushioning material from directly touching the glass 3 and damaging the glass 3.
尚、半導体基板にガラスを焼結していなくとも、半導体
の周辺の電極を接着されない部分にシリコーンゴムの被
覆を施しておけば、シリコンゴムがクッションの役目を
果すことになるので、半導体基板材料とエポキシ樹脂の
熱膨張係数差による引張力を緩和することができるとい
う効果がある。Even if glass is not sintered on the semiconductor substrate, if the parts around the semiconductor where the electrodes are not bonded are coated with silicone rubber, the silicone rubber will act as a cushion, so the semiconductor substrate material This has the effect of being able to alleviate the tensile force caused by the difference in thermal expansion coefficient between the epoxy resin and the epoxy resin.
かかる構造装置では、半導体基板と電極片の主面方向で
の熱膨張係数が近似なため、半導体基板と電極片の熱膨
張量の差異による半導体基板の損傷、ガラスの損傷、そ
して半導体基板−電極片間接着材層の熱疲労が起こらな
い。In such a structural device, since the thermal expansion coefficients of the semiconductor substrate and the electrode piece in the main surface direction are similar, damage to the semiconductor substrate, damage to the glass, and damage to the semiconductor substrate and the electrode due to the difference in the amount of thermal expansion between the semiconductor substrate and the electrode piece can occur. Thermal fatigue of the adhesive layer between the pieces does not occur.
また同じ方向で電極片と外被合成樹脂の間の熱膨張係数
に注目すると、電極片側面は常に合成樹脂１３によって
径方向に締めつけられているため、いわゆる焼きばめの
状態となり、電極片側面と合成樹脂間の密着性は非常に
良好になる。Also, if we pay attention to the coefficient of thermal expansion between the electrode piece and the outer synthetic resin in the same direction, one side of the electrode is always tightened in the radial direction by the synthetic resin 13, resulting in a so-called shrink fit state, and one side of the electrode The adhesion between the resin and the synthetic resin is very good.
次にシリコンの厚さ方向で電極片と合成樹脂の熱膨張係
数に注目すると、両者の熱膨張係数が近似であるため、
両者の間に熱膨張量の差異が殆んど無＜、シたがって滑
りが起らず、上記綿めつけによる密着性と相まって、電
極片と外被合成樹脂の密着が良好に得られる。Next, if we look at the thermal expansion coefficients of the electrode piece and the synthetic resin in the thickness direction of the silicone, we can see that the thermal expansion coefficients of both are approximate.
There is almost no difference in the amount of thermal expansion between the two, so no slipping occurs, and in combination with the adhesion achieved by the cotton plating, good adhesion between the electrode piece and the synthetic resin jacket can be achieved.
よって、これら境界を経て外周から湿気などが浸入する
のを防止することができる。Therefore, it is possible to prevent moisture from entering from the outer periphery through these boundaries.
第４図は本発明をいわゆるボタン型ダイオードに適用し
た他の実施例である。FIG. 4 shows another embodiment in which the present invention is applied to a so-called button type diode.
２１はシリコン半導体基板であり、半田３０及び３１を
介して上部電極片２６及び下部電極片２８で接着挾持さ
れている。A silicon semiconductor substrate 21 is adhesively sandwiched between an upper electrode piece 26 and a lower electrode piece 28 via solders 30 and 31.
３２はシリコン半導体基板２１の端部に付けたシリコー
ンゴムである。32 is silicone rubber attached to the edge of the silicon semiconductor substrate 21.
３３は上部電極片２６から下部電極片２８に亘って側面
を包囲外被するエポキシ樹脂である。Reference numeral 33 denotes an epoxy resin that surrounds and covers the side surfaces of the upper electrode piece 26 and the lower electrode piece 28.
本例における、電極片及びエポキシの熱膨張係数と、電
極片の熱膨張係数のＡ方向とＢ方向の異方性は先の実施
例と同一である。In this example, the thermal expansion coefficients of the electrode piece and epoxy, and the anisotropy of the thermal expansion coefficient of the electrode piece in the A direction and the B direction are the same as in the previous example.
そして、同じように電極片と外被合成樹脂の密着が良好
に得られるので、境界を経て外周から湿気などが浸入す
るのを無くすることができる。In the same way, good adhesion between the electrode piece and the outer covering synthetic resin can be obtained, so that it is possible to prevent moisture from entering from the outer periphery through the boundary.
尚、以上においては２端子半導体装置を実施例として、
掲げたが、本発明はこれに限るものではなく、サイリス
クの如き３端子装置に対しても、何ら制限することもな
く実施できることは勿論である。In addition, in the above, a two-terminal semiconductor device is taken as an example,
However, the present invention is not limited to this, and it goes without saying that the present invention can be implemented without any limitation on a three-terminal device such as Cyrisk.
以上から明らかなように、本発明によれば、半導体基板
、電極片、合成樹脂の熱膨張係数が機能的に良く合って
いるため特に大型の、合成樹脂で包囲外被した半導体装
置が得られるのである。As is clear from the above, according to the present invention, the coefficients of thermal expansion of the semiconductor substrate, the electrode piece, and the synthetic resin are functionally well matched, so that a particularly large semiconductor device surrounded by a synthetic resin can be obtained. It is.
本発明に用いられる銅と炭素、タングステンまたは／お
よびアンバー繊維などの複合材よりなる電極片の面方向
および厚み方向の熱膨張係数はその配合比と繊維の形状
、寸法、混合の仕方などによって、ある範囲内で適当に
選択することができる。The coefficient of thermal expansion in the plane direction and the thickness direction of the electrode piece made of a composite material such as copper and carbon, tungsten or/and amber fiber used in the present invention depends on the blending ratio, the shape and size of the fibers, the method of mixing, etc. It can be selected appropriately within a certain range.
面方向の熱膨張係数はシリコンのそれ（３，５Ｘ１０−
６／’Ｃ）と適合するように３．５〜５Ｘ１０−７’Ｃ
の範囲が好ましい。The coefficient of thermal expansion in the plane direction is that of silicon (3.5X10-
6/'C) to match 3.5~5X10-7'C
A range of is preferred.
この場合、これ以下にしようとすると、銅に対する炭素
等の比率が大きくなり、熱伝導特性が劣化するので実用
的でなくなる。In this case, if it is attempted to be lower than this, the ratio of carbon, etc. to copper will increase, and the thermal conductivity will deteriorate, making it impractical.
厚み方向の複合材の熱膨張係数は、電極片側壁と会合樹
脂（膨張係数２５ Ｘ １０”−６／’Ｃ） （！：の
境界面における両者のずれ量が炭素等の繊維（通常は半
径約５μｍ程度）の１本分以内に納めるのが望ましいの
で、２０〜３０ Ｘ １０−６／’Ｃの範囲にあるのが
望ましい。The coefficient of thermal expansion of the composite material in the thickness direction is that of the one side wall of the electrode and the associated resin (coefficient of expansion 25 It is desirable that the temperature be within the range of 20 to 30 x 10-6/'C.
第１図は、本発明の１実施例の分解断面図、第２図は第
１図における電極片の斜視図、第３図は本発明の１実施
例の断面図、第４図は本発明の他の実施例の断面図であ
る。
１．２１・・・・・・半導体基板、６，８，２６．２８
・・・・・・電極片、１３．３３・・・・・・合成樹脂
、１２．３２・・・・・・クッション材。FIG. 1 is an exploded sectional view of one embodiment of the present invention, FIG. 2 is a perspective view of the electrode piece in FIG. 1, FIG. 3 is a sectional view of one embodiment of the present invention, and FIG. FIG. 3 is a sectional view of another embodiment of the invention. 1.21... Semiconductor substrate, 6, 8, 26.28
... Electrode piece, 13.33 ... Synthetic resin, 12.32 ... Cushion material.
Claims (1)
導体基板及ｉｔ極片の側面の少なくとも半導体基板に近
い側を鍔状に合成樹脂で囲繞した半導体装置において、
電極片の熱膨張係数が半導体基板との接着面と平行な方
向では半導体基板の熱膨張係数と等しいか略々等しく、
上記方向と垂直方向では該合成樹脂の熱膨張係数と等し
いか略々等しいことを特徴とする半導体装置。 ２ 電極片が、炭素、タングステンおよびアンバー繊維
のうちの少なくとも１つと銅との複合材であることを特
徴とする第１項記載の半導体装置。 ３ 半導体基板の主面周辺部の、電極片で覆われない部
分の少なくとも１部にクッション材を配置したことを特
徴とする第１または第２項記載の半導体装置。[Scope of Claims] 1. In a semiconductor device in which a pair of electrode pieces are bonded to the bidirectional surfaces of a conductor substrate, and at least the sides of the semiconductor substrate and the IT electrode pieces, at least the side closer to the semiconductor substrate, are surrounded by a brim-like synthetic resin. ,
The coefficient of thermal expansion of the electrode piece is equal to or approximately equal to the coefficient of thermal expansion of the semiconductor substrate in the direction parallel to the adhesive surface with the semiconductor substrate;
A semiconductor device characterized in that the coefficient of thermal expansion in a direction perpendicular to the above direction is equal to or substantially equal to that of the synthetic resin. 2. The semiconductor device according to item 1, wherein the electrode piece is a composite material of copper and at least one of carbon, tungsten, and amber fibers. 3. The semiconductor device according to item 1 or 2, characterized in that a cushioning material is disposed in at least a portion of the peripheral portion of the main surface of the semiconductor substrate that is not covered with the electrode piece.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP53149287A JPS5816616B2 (en) | 1978-12-01 | 1978-12-01 | semiconductor equipment |
| DE7979302729T DE2966314D1 (en) | 1978-12-01 | 1979-11-29 | An electrode for a semiconductor device and method of making such an electrode |
| EP19790302729 EP0012019B1 (en) | 1978-12-01 | 1979-11-29 | An electrode for a semiconductor device and method of making such an electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP53149287A JPS5816616B2 (en) | 1978-12-01 | 1978-12-01 | semiconductor equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5575249A JPS5575249A (en) | 1980-06-06 |
| JPS5816616B2 true JPS5816616B2 (en) | 1983-04-01 |
Family
ID=15471885
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP53149287A Expired JPS5816616B2 (en) | 1978-12-01 | 1978-12-01 | semiconductor equipment |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0012019B1 (en) |
| JP (1) | JPS5816616B2 (en) |
| DE (1) | DE2966314D1 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58137285A (en) * | 1982-02-10 | 1983-08-15 | 株式会社日立製作所 | Ceramic board with metal plate and method of producing same |
| JPS6060172U (en) * | 1983-09-13 | 1985-04-26 | 本田技研工業株式会社 | Transformer device with rectifier |
| DE19726534A1 (en) * | 1997-06-23 | 1998-12-24 | Asea Brown Boveri | Power semiconductor module with closed submodules |
| EP1403923A1 (en) * | 2002-09-27 | 2004-03-31 | Abb Research Ltd. | Press pack power semiconductor module |
| DE102005046710B4 (en) * | 2005-09-29 | 2012-12-06 | Infineon Technologies Ag | Method for producing a component arrangement with a carrier and a semiconductor chip mounted thereon |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1213484A (en) * | 1958-08-04 | 1960-04-01 | Thomson Houston Comp Francaise | Non-isotropic conductive medium for intense heat flow |
| JPS5116302B2 (en) * | 1973-10-22 | 1976-05-22 | ||
| JPS5846059B2 (en) * | 1977-04-15 | 1983-10-14 | 株式会社日立製作所 | semiconductor equipment |
| JPS603776B2 (en) * | 1977-06-03 | 1985-01-30 | 株式会社日立製作所 | semiconductor element |
-
1978
- 1978-12-01 JP JP53149287A patent/JPS5816616B2/en not_active Expired
-
1979
- 1979-11-29 EP EP19790302729 patent/EP0012019B1/en not_active Expired
- 1979-11-29 DE DE7979302729T patent/DE2966314D1/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2966314D1 (en) | 1983-11-17 |
| EP0012019A1 (en) | 1980-06-11 |
| JPS5575249A (en) | 1980-06-06 |
| EP0012019B1 (en) | 1983-10-12 |
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