JPS58165325A - Exposure of electron beam - Google Patents

Abstract

PURPOSE:To remarkably cut down the time required for the entire patterning by a method wherein a stage is shifted at the distance equal to the maximum amplitude of the electron beam, thereby enabling to reduce the number of shifting. CONSTITUTION:The material to be exposed is divided into a plurality of chips of identical kind and the pattern in chips is drawn using the data sent from the chip data memory wherein the pattern data of the chip 1 are stored. At this time, the material to be exposed is divided into the square-shaped region (the regions divided by broken lines) having the largest amplitude L of the electron beam is virtually regarded as a side of the square-shaped region, and the stage is shifted in X or Y direction by the distance equal to the maximum amplitude of the electron beam. A patterning is performed on the regions in the order of 1, 2, 3 and so force, for example, using the chip data sent from the chip data memory effectively. Accordingly, the number of shifting of the stage required when a patterning is performed on the chips of lxXly (the region divided by solid lines) in size can be reduced remarkably as a whole.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electron beam exposure method that reduces the time required for drawing.

Recently, the electron beam exposure method has been attracting the most attention as a means of manufacturing LSI and VLSI devices. Now, pattern drawing using the electron beam exposure method is done by moving the stage on which the material to be exposed is placed and scanning the material with the electron beam, since there is a limit to the amplitude of the electron beam. There is. In general, the size of the chip is determined by the device being designed, and the maximum amplitude of the electron beam is determined by the equipment, so the size of the chip may be larger than the maximum amplitude of the electron beam. Sometimes it is small, and sometimes it is equal to the maximum amplitude of the electron beam. Now, there is no problem if the size of the chip is equal to the maximum amplitude of the electron beam, but there is a problem if it is large or small. For example, a case where the chip size is larger than the maximum swing width will be explained below.

As shown in Figure 1, the materials are l! xxf! y into the same chip (area divided by solid line), move the stage every time the maximum amplitude of the electron beam within the chip, and transfer the chip data from the chip data memory that stores the data of one chip to each chip. It is used repeatedly and exposed for each chip (■, ■, ■ in the figure).

... indicates an area with a drawing order). Now, if the number of chips in the X direction is nx and the number of chips in the Y direction is ny, the total number of stage movements is (-ffi2-+ 1) n
x-<h+1). , the number of bells has increased significantly. Therefore, if the sum of the stage movement time and the actual exposure time is defined as the time required for drawing, the time required for the entire drawing will become significantly longer.

The present invention has been made in view of the above points, and consists of dividing the material into square regions each having one side the maximum amplitude of the electron beam within an allowable range of distortion, etc., and moving the stage to the By moving the stage by a distance equal to the maximum swing width of the electron beam in the direction, and effectively using the chip data from the chip data memory, the number of stage movements can be significantly reduced.
The present invention provides a novel electron beam exposure method that significantly shortens the time required for the entire drawing.

Figure 2 is the same as Figure 1←, the size of the chip! Me1: The exposure method of this book is shown for the case where X1v (region □ divided by solid line) is larger than the amplitude of the electron beam. Divide the stage into square areas (areas divided by broken lines) and mark the stage with
Alternatively, move the electron beam in the Y direction by a distance equal to the maximum swing width, and effectively use the chip data from the chip data memory to perform ■, ■, ■.

The areas are drawn according to the order of... Now, if the number of chips in the X direction is nx, and the number of chips in the Y direction is ny, the total number of stage movements is (・Monthly desire 1)・(↓Selection + 1), and as shown in Figure 1. Overall, (nx-1>・(ny-1)
This will result in a large number of times. This effect can be obtained in exactly the same way even when the size of the chip is smaller than the amplitude of the electron beam. Next, the present invention will be explained using this case as an example. First, the stage is moved in the X or Y direction by a distance approximately equal to the maximum amplitude of the electron beam. In addition, the chip size is 1××Jy, 1x<L<21X, fV<L<
21'V, and as shown in FIG.
H) tfif y 7 r-asl"'uZ T,l
7') Get * 3 FjA K 7R1':・
0, the exposed area of the material M' is indicated by a broken line LXL.
An area divided into sizes (hereinafter referred to as LL area) Lll,
112,113. ..., moves to L21, 122 (actually the center of each LL area), and the inside of the L1 area is exposed each time the movement is made.

Now, the LL area L11 is a section Att*A+z.

A21. From A22, L12 is the section At 3 , AX
4, Als, A23. From Az s, A2 s,
L13 is Als, At7. Ate, Azs+Az7+A
From 28..., L21 is A3 t, A32
.

A4 + + A42, As 1. From As 2, l
-22 consists of..., respectively. Therefore, when the stage moves to 111, for example, section A+ 1+ At 2
1A2, 2+Az+, L area 11 is exposed, and when the stage moves to 112, section A+3. A1
s + At s e A2 s + A24・A23
The IL region L12 is exposed in the order of , and in the same manner, when the stage moves to 121, the sections A3r', Aa 2 ,
A42, A411 As 1*As 2 are exposed in this order.

For these exposures, data from a chip data memory storing data for one chip is used. The exposure method will be explained below.

First, data for one chip, for example, position data of a pattern drawn within the chip, is stored in the chip data memory. Then, a bias is applied to the electron beam depending on the position of the section to be drawn. Furthermore, depending on where in the chip the position of the pattern in the section is, only the data in the appropriate location of the chip data memory is read out, and the read data, stage position data, and the bias data are read out. A predetermined pattern is drawn by controlling the irradiation position of the electron beam on the material to be exposed based on the following.

Table 1 shows the X-direction bias 1ilBX from the center of the division base LL area, the Y-direction bias value BY1, the range of data to be read from the chip memory (see chip data memory in Figure 4), and the stage position in the drawings. This is what I did.

Exposure of the LL region 11 and t-12 will be explained below using the electron beam exposure apparatus shown in FIG. 5, which shows an example of carrying out the method of the present invention.

In FIG. 2, 1 is an electron beam exposure device lens barrel, and 2 is an electron gun. The electron beam emitted from the electron gun is irradiated by the irradiation lens 3 onto a mask 4M having a square or rectangular hole in the center. The electron beam having a square or rectangular cross section that has passed through the hole in the mask is focused onto a material to be exposed 6 by a focusing lens 5. Further, the electron beam is simultaneously deflected onto the material to be exposed 6 by the scanning deflection system 7. Reference numeral 11 denotes a magnetic disk that stores data related to the pattern to be drawn, and the data stored on the disk is read out by commands from a digital computer 12 (hereinafter referred to as CPU), and is read out from the memory built into the CPLJ, ffi, s Stored in chip data memory 13 via C9: '薯■, s. The H8C9 is a high-speed data transmission control mechanism that reads out the data in the memory in the CPU and the chip data memory, and generates a signal corresponding to the pattern position coordinates of the L area, where there is a pattern to be drawn based on each data. and send it to the DA converter 8. The H8G also reads the position data of the stage 14 on which the material to be exposed 6 is placed from the memory in the CP LJ, and transfers it to the stage moving drive device 1 via the DA converter 15.
(for example, a motor) 16, and at the same time, it is also sent to the DA converter 8. The DA converter 8 creates an irradiation position signal of the pattern to be drawn from the LL area pattern position coordinates and the stage position data, and sends it to the deflection system □7 for the previous two scans.

Now, pattern position data for one chip is stored in the chip data memory 13 in advance. First, when drawing section A1+, stage position data (Xo, Yo) corresponding to the center coordinates of L++ from the memory of CPtJ12,
Bias data (0, O) and data specifying the range to be read from the chip data memory (hereinafter referred to as read range data) (0 to Dx, 0 to Rv) are sent to the H8C9. The H8C has stage position data (Xo, Yo
) is sent to the DA converters 8 and 15, and at the same time, the read range data (O to ZX
.

The pattern position data (Xl, Ys) stored in the range specified by O to 1v) is read out, and the data and bias data (0, 0) are sent to the DA converter 8. The D
The A converter uses these data and the stage position data to generate an irradiation position signal (Xo +X+) of the pattern within section A+.
, Yo and Y+) and send it to the scanning deflection system 7. Further, the DA converter 15 receives stage position data (Xo
, Yo) to the motor 16, so the stage 14 is located at the center of L++. As a result, a predetermined pattern is drawn within the section A1+. When drawing section A12,
Stage position data (Xo.

Yo), bias data (, lx, O), and read range data (0 to 1y, o to Iy) are sent to H8C9. The H8C has stage position data (Xo, Yo
) is sent to the DA converters 8 and 15, and at the same time, the read range data (0 to L-/y
, o~) ■) The pattern position data (X+') stored in the range specified by ■).

Y1') is read out, and this data and bias data (L
X, O) are sent to the DA converter 8. The DA converter generates the irradiation position 1 signal (Xo +X
+'+/x, Yo4-Y+') and sends it to the scanning deflection system 7. As a result, a predetermined pattern is drawn within the section Al1 in the same manner as described above. Hereinafter, as shown in Table 1, section A22. A21 is drawn and LL
The territory area 11 is drawn. Next, when drawing section A13, stage position data (Xo +l, Yo), bias data (0°O), and readout range data (L-) corresponding to the center coordinates of L12 are extracted from the memory of CPL 112.
Iy, o~y) is sent to H8C9. The H8C sends the stage position data (Xo +L, 'Yo) to the DA converter 8:[.

and 15, at the same time the read range data (L-/X~ly) is sent from the chip data memory 3.

i) Send the putter data and bias data (0, O) specified to i to the DA converter 8. The DA converter creates an irradiation position signal (Xo +L+X+, Y6+Y1) of the pattern within the section Ala and sends it to the scanning deflection system 7. Further, the DA converter 15 receives stage position data (Xo +L.

Yo ) is sent to the motor 6, so the stage 14 is L1
Move to the center of 2. As a result, a predetermined pattern is drawn within the section Ata. Below, as shown in Table 1, the section At
4*Ats+Azs, Az4'+A23 is drawn, and L
The L area L12 is drawn. Thereafter, other LL regions are drawn in the same manner.

In the above embodiments, the method of the present invention was applied to an exposure apparatus in which one mask with holes was arranged, but it could also be applied to an exposure apparatus of a variable electron beam cross-section type, etc. in which a plurality of masks with holes were arranged. It's okay.

According to the present invention as described above, the number of movable stages can be significantly reduced, resulting in a significant reduction in the time required for the entire drawing process.

[Brief explanation of drawings]

FIG. 1 shows drawing on a material by a conventional exposure method, FIG. 2 shows an example of drawing on a material by the exposure method of the present invention, and FIG. 5 shows an example of application of the exposure method of the present invention. The schematic diagrams of the electron beam exposure apparatus, FIGS. 3 and 4, are diagrams used to explain its operation. [: Maximum amplitude of electron beam, lx=X-direction size of chip,) ■: Y-direction size of chip, Lll. L12. ...: LL area A1□m A l 2 *
...Bow section, BX: X-direction bias value, BY: Y-direction bias value, 2: Electron gun, 6: Material to be exposed, 7: Scanning deflection system, 12: Digital electronic computer, 9: High-speed data transmission control mechanism , 8: DA converter, 14: stage. Patent applicant JEOL Ltd. Representative Tadao Kase

Claims (1)

[Claims] In this method, the material to be exposed is divided into a plurality of identical chips, and the pattern within the chip is drawn using data from a chip data memory that stores the pattern data of one chip. The material to be exposed is moved by a distance equal to the maximum amplitude of the electron beam each time, and a pattern within the square area is drawn each time. Electron beam exposure method.