JPS5816321B2 - Positive characteristic thermistor device - Google Patents

Positive characteristic thermistor device

Info

Publication number
JPS5816321B2
JPS5816321B2 JP430776A JP430776A JPS5816321B2 JP S5816321 B2 JPS5816321 B2 JP S5816321B2 JP 430776 A JP430776 A JP 430776A JP 430776 A JP430776 A JP 430776A JP S5816321 B2 JPS5816321 B2 JP S5816321B2
Authority
JP
Japan
Prior art keywords
temperature coefficient
positive temperature
coefficient thermistor
electrode
nickel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP430776A
Other languages
Japanese (ja)
Other versions
JPS5287655A (en
Inventor
堤勇二
藤本昇市
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichicon Corp
Original Assignee
Nichicon Capacitor Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichicon Capacitor Ltd filed Critical Nichicon Capacitor Ltd
Priority to JP430776A priority Critical patent/JPS5816321B2/en
Publication of JPS5287655A publication Critical patent/JPS5287655A/en
Publication of JPS5816321B2 publication Critical patent/JPS5816321B2/en
Expired legal-status Critical Current

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  • Thermistors And Varistors (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)

Description

【発明の詳細な説明】 この発明は放熱金属板に導電性接着剤による接着が良好
なる電極を有する正特性サーミスタ装置に関するもので
ある。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a positive temperature coefficient thermistor device having an electrode that can be well adhered to a heat dissipating metal plate using a conductive adhesive.

正特性サーミスタ装置は自己制御形見熱体として賞用さ
れているが、正特性サーミスタ素子の取付方法にはバネ
圧接、半田付け、導電性接着剤などがある。
PTC thermistor devices are widely used as self-regulating keepsakes, and methods for attaching PTC thermistor elements include spring pressure welding, soldering, and conductive adhesives.

この発明は導電性接着剤を用いる場合の正特性サーミス
タ装置の電極に関するものである。
This invention relates to an electrode for a positive temperature coefficient thermistor device using a conductive adhesive.

一般に正特性サーミスタ装置の電極はニッケル無電極メ
ッキ法により半導体磁器全面にニッケルをメッキし、そ
の後約400℃で熱処理を行うとオーミックコンタクト
なニッケル電極ができる。
Generally, the electrodes of a positive temperature coefficient thermistor device are made by plating the entire surface of semiconductor porcelain with nickel using a nickel electrodeless plating method, and then heat-treating it at about 400° C. to obtain an ohmic contact nickel electrode.

しかし、この場合ニッケルが半導体磁器全面に付与され
るため、その半導体磁器の外周面をセンターレスグライ
ンダーなどで削り取り、半導体磁器の両面に一対の電極
を形成して正特性サーミスタ素子を得る。
However, in this case, since nickel is applied to the entire surface of the semiconductor porcelain, the outer peripheral surface of the semiconductor porcelain is ground off using a centerless grinder or the like, and a pair of electrodes are formed on both sides of the semiconductor porcelain to obtain a positive temperature coefficient thermistor element.

この正特性サーミスタ素子を放熱金属板の放熱面に導電
性接着剤で取り付ける。
This positive temperature coefficient thermistor element is attached to the heat dissipation surface of the heat dissipation metal plate using a conductive adhesive.

第1図は従来の正特性サーミスタ装置の断面図で、半導
体磁器1にニッケルの無電解メッキを行い、熱処理後に
半導体磁器1の外周面1aをセンターレスグラインダー
などで研磨すると、ニッケル電極213が形成されて正
特性サーミスタ素子4を得る。
FIG. 1 is a cross-sectional view of a conventional positive temperature coefficient thermistor device, in which a semiconductor ceramic 1 is electrolessly plated with nickel, and after heat treatment, the outer circumferential surface 1a of the semiconductor ceramic 1 is polished with a centerless grinder or the like to form a nickel electrode 213. A positive temperature coefficient thermistor element 4 is obtained.

この正特性サーミスタ素子4を放熱金属板5に導電性接
着剤6で接着固定して正特性サーミスタ装置が構成され
ている。
A positive temperature coefficient thermistor device is constructed by adhesively fixing this positive temperature coefficient thermistor element 4 to a heat dissipating metal plate 5 with a conductive adhesive 6.

しかしながら、正特性サーミスタ素子4のニッケル電極
3と放熱金属板5との間に気泡が残存しないようにこす
り合せをすると、導電性接着剤6が押し出されて正特性
サーミスタ素子40半導体磁器1の外周面1aに図示の
ように耐着し、導電性接着剤6を介してニッケル電極2
と3が短絡する場合がある。
However, when the nickel electrode 3 of the PTC thermistor element 4 and the heat dissipating metal plate 5 are rubbed together so that no air bubbles remain between them, the conductive adhesive 6 is pushed out and the outer periphery of the PTC thermistor element 40 and the semiconductor porcelain 1 A nickel electrode 2 is attached to the surface 1a through a conductive adhesive 6 as shown in the figure.
and 3 may be shorted.

このような短絡事故を除去するために正特性サーミスタ
素子40半導体磁器1の厚みをその分だけ厚くしてもよ
いが、正特性サーミスタ素子4が大きくなり、かつ高価
になる欠点がある。
In order to eliminate such a short circuit accident, the thickness of the positive temperature coefficient thermistor element 40 and the semiconductor ceramic 1 may be increased accordingly, but this has the drawback that the positive temperature coefficient thermistor element 4 becomes large and expensive.

この発明は上記の諸欠点を除去した正特性サーミスタ装
置を提供しようとするものである。
The present invention aims to provide a positive temperature coefficient thermistor device that eliminates the above-mentioned drawbacks.

すなわち、この発明は導電性接着剤を用いて正特性サー
ミスタ素子を放熱金属板に接着固定したとき、導電性接
着剤を介して正特性サーミスタ素子の両電極が短絡しな
いように、この電極の構成を改良した正特性サーミスタ
装置である。
That is, the present invention provides a configuration of the electrodes so that when a PTC thermistor element is adhesively fixed to a heat dissipating metal plate using a conductive adhesive, both electrodes of the PTC thermistor element are not short-circuited via the conductive adhesive. This is a positive temperature coefficient thermistor device with improved characteristics.

以下、この発明を第2図について説明す、る。The invention will now be explained with reference to FIG.

第2図はこの発明の正特性サーミスタ装置の断面図で、
半導体磁器11にニッケルの無電解メッキを行い、約4
00℃で熱処理した後に半導体磁器11の外周面を研磨
せずに半導体磁器110片面の円周端面11aのみをサ
ンドブラストで電極面を削り取って非対称形のニッケル
電極12と13を形成して正特性サーミスタ素子14を
得がこの正特性サーミスタ素子14を放熱金属板15に
導電性接着剤16で接着固定して正特性サーミスタ装置
が構成される。
FIG. 2 is a cross-sectional view of the positive temperature coefficient thermistor device of the present invention.
Electroless plating of nickel is applied to the semiconductor porcelain 11, and approximately 4
After heat treatment at 00°C, the electrode surface of only the circumferential end face 11a of one side of the semiconductor porcelain 110 is scraped off by sandblasting without polishing the outer peripheral surface of the semiconductor porcelain 11 to form asymmetrical nickel electrodes 12 and 13, thereby producing a positive temperature coefficient thermistor. A positive temperature coefficient thermistor device is constructed by bonding and fixing the positive temperature coefficient thermistor element 14 to a heat dissipating metal plate 15 with a conductive adhesive 16.

正特性サーミスタ素子14を放熱金属板15に接着固定
するとき、正特性サーミスタ素子140半導体磁器11
の外周面にニッケルが耐着しているニッケル電極13を
接着すれば、導電性接着剤16が半導体磁器11の外周
面に耐着しても、導電性接着剤16を介して正特性サー
ミスタ素子14のニッケル電極12と13が短絡を起す
ことがなくなり、従って接着後の手直しなどが不要にな
る。
When bonding and fixing the PTC thermistor element 14 to the heat dissipating metal plate 15, the PTC thermistor element 140 and the semiconductor porcelain 11
If the nickel electrode 13 to which nickel adheres is adhered to the outer peripheral surface of the semiconductor ceramic 11, even if the conductive adhesive 16 adheres to the outer peripheral surface of the semiconductor ceramic 11, the positive temperature coefficient thermistor element can be bonded through the conductive adhesive 16. The nickel electrodes 12 and 13 of No. 14 will not cause a short circuit, thus eliminating the need for rework after bonding.

そしてニッケル電極12と13の間隔は半導体磁器11
の厚みと同等またはそれ以上である。
The distance between the nickel electrodes 12 and 13 is the same as that of the semiconductor porcelain 11.
The thickness is equal to or greater than that of

上記の正特性サーミスタ装置はニッケル電極を用いた場
合について説明したが、通常使用されるニッケルの上に
銀を付与した2層電極は突入電流による電極の劣化を防
止すると共にニッケル電極の場合上回等またはそれ以上
の性能を得ることができる。
The positive temperature coefficient thermistor device described above uses a nickel electrode, but a two-layer electrode with silver added on top of nickel, which is commonly used, prevents deterioration of the electrode due to inrush current and is superior to the case of a nickel electrode. It is possible to obtain similar or better performance.

斜上のようにこの発明は半導体磁器に無電解ニッケルメ
ッキ法によりオーミックコンタクトされたニッケル電極
またはニッケルー銀電極を付与した正特性サーミスタ装
置において、上記半導体磁。
As shown above, the present invention provides a positive temperature coefficient thermistor device in which a nickel electrode or a nickel-silver electrode is provided in ohmic contact with a semiconductor porcelain by an electroless nickel plating method.

器の片面を円周端面に沿って電極を削り取って一対の非
対称形の電極を形成して正特性サーミスタ素子を構成し
、上記正特性サーミスタ素子の半導体磁器の外周面にま
で耐着した電極を放熱金属板に導電性接着剤を用いて接
着固定してなる正特性サーミスタ装置で、 (イ)従来の正特性サーミスタ装置は導電性接着剤によ
って両電極間の間隙にバラツキができ、使用中に短絡現
象を発生する場合があり、寿命的に問題があったが、こ
の発明の正特性サーミスタ装置は導電性接着剤を用いて
も両電極間の間隙は一定で、使用中に短絡現象を発生す
ることなく、寿命的に安定である。
A positive temperature coefficient thermistor element is constructed by scraping an electrode along the circumferential end face of one side of the device to form a pair of asymmetrical electrodes, and the electrode is adhered to the outer peripheral surface of the semiconductor porcelain of the positive temperature coefficient thermistor element. This is a positive temperature coefficient thermistor device that is fixed to a heat dissipating metal plate using a conductive adhesive. There were cases where short-circuit phenomena occurred, which caused problems in terms of lifespan, but the positive temperature coefficient thermistor device of this invention maintains a constant gap between both electrodes even when using a conductive adhesive, and short-circuit phenomena do not occur during use. It is stable over a lifetime without causing any damage.

(ロ)従来の正特性サーミスタ装置は半導体磁器に無電
解メッキを行い、熱処理後に半導体磁器の外周面をセン
ターレスグラインダーなどで研磨する工程を必要とし、
この考案の正特性サーミスタ装置は半導体磁器に無電解
メッキを行い、熱処理後に半導体磁器の片面の円周端面
をサンドブラストの工程を必要とするもので、両者は工
数的に差異はない。
(b) Conventional positive temperature coefficient thermistor devices require a process of applying electroless plating to semiconductor porcelain, and polishing the outer peripheral surface of the semiconductor porcelain with a centerless grinder after heat treatment.
The positive temperature coefficient thermistor device of this invention requires electroless plating on semiconductor porcelain, and after heat treatment, a process of sandblasting one circumferential end surface of the semiconductor porcelain, and there is no difference in the number of steps between the two.

などの効果があり、工業的ならびに実用的価値大なるも
のがある。
It has the following effects and has great industrial and practical value.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来の正特性サーミスタ装置の断面図、第2図
はこの発明の正特性サーミスタ装置の断面図である。 11:半導体磁器、11a二半導体磁器110円周端面
、12,13:電極、14:正特性サーミスタ素子、1
5:放熱金属板、16:導電性接着剤。
FIG. 1 is a sectional view of a conventional PTC thermistor device, and FIG. 2 is a sectional view of a PTC thermistor device of the present invention. 11: Semiconductor porcelain, 11a Two semiconductor porcelain 110 circumferential end surfaces, 12, 13: Electrodes, 14: Positive temperature coefficient thermistor element, 1
5: Heat dissipation metal plate, 16: Conductive adhesive.

Claims (1)

【特許請求の範囲】[Claims] 1 半導体磁器に無電解ニッケルメッキ法によりオーミ
ックコンタクトされたニッケル電極量たけニッケルー銀
電極を付与した正特性サーミスタ装置に□おいて、手記
半導体磁器の片面を円周端面に沿って電極を削り取って
一対の非対称形の電極を形成して正特性サーミスタ素子
を構成し、上記正特性サーミスタ素子の半導体磁器の外
周面にまで耐着した電極を放熱金属板に導電性接着剤を
用いて接着固定してなる正特性サーミスタ装置。
1. In a positive temperature coefficient thermistor device in which a nickel-silver electrode is provided in ohmic contact with a nickel electrode by an electroless nickel plating method on semiconductor porcelain, one side of the semiconductor porcelain is scraped off along the circumferential end surface, and a pair of electrodes are removed. A positive temperature coefficient thermistor element is constructed by forming an asymmetrical electrode of the positive temperature coefficient thermistor element, and the electrode, which is resistant to adhering to the outer peripheral surface of the semiconductor ceramic of the positive temperature coefficient thermistor element, is adhesively fixed to a heat dissipating metal plate using a conductive adhesive. A positive characteristic thermistor device.
JP430776A 1976-01-16 1976-01-16 Positive characteristic thermistor device Expired JPS5816321B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP430776A JPS5816321B2 (en) 1976-01-16 1976-01-16 Positive characteristic thermistor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP430776A JPS5816321B2 (en) 1976-01-16 1976-01-16 Positive characteristic thermistor device

Publications (2)

Publication Number Publication Date
JPS5287655A JPS5287655A (en) 1977-07-21
JPS5816321B2 true JPS5816321B2 (en) 1983-03-30

Family

ID=11580829

Family Applications (1)

Application Number Title Priority Date Filing Date
JP430776A Expired JPS5816321B2 (en) 1976-01-16 1976-01-16 Positive characteristic thermistor device

Country Status (1)

Country Link
JP (1) JPS5816321B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6314835U (en) * 1986-07-15 1988-01-30

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5815205A (en) * 1981-07-20 1983-01-28 株式会社村田製作所 Method of treating nickel electrode of ceramic electronic part
ES2899192T3 (en) 2017-04-28 2022-03-10 Recondoil Sweden Ab oil purification

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6314835U (en) * 1986-07-15 1988-01-30

Also Published As

Publication number Publication date
JPS5287655A (en) 1977-07-21

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