JPS58161318A - Method of production of semiconductor device and apparatus for use in this method - Google Patents
Method of production of semiconductor device and apparatus for use in this methodInfo
- Publication number
- JPS58161318A JPS58161318A JP4276782A JP4276782A JPS58161318A JP S58161318 A JPS58161318 A JP S58161318A JP 4276782 A JP4276782 A JP 4276782A JP 4276782 A JP4276782 A JP 4276782A JP S58161318 A JPS58161318 A JP S58161318A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- induction coil
- heated
- semiconductor
- electromagnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
Abstract
Description
【発明の詳細な説明】
本発明は半導体装置の製造工程において行なう加熱処理
における加熱方法およびそｎに使用する装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a heating method for heat treatment performed in a semiconductor device manufacturing process and an apparatus used therefor.
周知のように、半導体装＃を製造する場合には、加熱処
理が多用さｔている。As is well known, heat treatment is frequently used when manufacturing semiconductor devices.
たとえば、名種ベーク処理、アニール処理、不純物拡散
処理、気相成長処理等がある。現在これらの加熱方式は
ヒータおよび赤外線ランプ等による加熱が主流であり、
この加熱法は熱伝導、ふく射により、被加熱物を外部か
ら加熱する外部加熱方式であり、加熱効率が極めて悪い
。For example, there are special bake treatments, annealing treatments, impurity diffusion treatments, vapor phase growth treatments, and the like. Currently, the mainstream heating methods for these are heating using heaters, infrared lamps, etc.
This heating method is an external heating method in which the object to be heated is heated from the outside by heat conduction or radiation, and the heating efficiency is extremely low.
この為、現在の各種加熱処理を伴なう半導体装置製造処
理時間か長く、装置を自動化した場合大型化する傾向に
あり、消費電力が大きくなる欠点がある。For this reason, the current semiconductor device manufacturing processing time that involves various heat treatments is long, and when the device is automated, it tends to be larger and has the disadvantage of increasing power consumption.
したがって本発明の目的は加熱効率を高め、前述問題点
を解決することにある。Therefore, an object of the present invention is to improve the heating efficiency and solve the above-mentioned problems.
この目的を達成するために、本発明は被加熱物に直接電
磁気を作用させて、被加熱物の電磁気損失効果により、
被加熱物を自己加熱（内部加熱）させ、加熱効率を高め
、前述問題点を解決したものである。In order to achieve this objective, the present invention applies electromagnetism directly to the object to be heated, so that due to the electromagnetic loss effect of the object to be heated,
This method solves the above-mentioned problems by allowing the object to be heated to self-heat (internal heating) to increase heating efficiency.
以下、本発明の夾施例な図面に基づいて説明する。Hereinafter, embodiments of the present invention will be explained based on the drawings.
第１図は誘導コイルにより電磁気を発生させ、被加熱物
に作用させ、電磁気損失効果により、被加熱物を自己加
熱するポリイミド樹脂キュアベーク処理装置の要部断面
図である。FIG. 1 is a cross-sectional view of a main part of a polyimide resin cure bake processing apparatus that generates electromagnetism using an induction coil, causes it to act on an object to be heated, and self-heats the object to be heated by the electromagnetic loss effect.
炉１は箱体となるとともに電磁気シールドがなされてい
る。炉１内には誘導コイル２を備えており、誘導コイル
２内にウェハ支持体３を配設し、ウェハ支持体３上に表
面にポリイミド樹脂が形成さ扛た半導体ウェハ４沿セツ
トされている。The furnace 1 has a box shape and is electromagnetically shielded. The furnace 1 is equipped with an induction coil 2, a wafer support 3 is disposed within the induction coil 2, and a semiconductor wafer 4 whose surface is coated with polyimide resin is placed on the wafer support 3. .
一方誘導コイル２には電源５から電力が供給され、誘導
コイル２内に置かれた半導体ウェアｈ４は電磁誘導によ
り、電磁気が作用し、電磁気損失により、加熱される。On the other hand, electric power is supplied to the induction coil 2 from the power source 5, and the semiconductor wear h4 placed inside the induction coil 2 is heated by electromagnetic energy due to electromagnetic induction and electromagnetic loss.
半導体ウェハ４の温度制御は温度センサ６により、半導
体ウェア・４の温度を計測し、制御部７により評価し、
電源５かも誘導コイル２に供給される電力を制御し、所
定温度にウェア・温度を制御する。For temperature control of the semiconductor wafer 4, the temperature of the semiconductor wafer 4 is measured by a temperature sensor 6, and evaluated by a control unit 7.
The power source 5 also controls the power supplied to the induction coil 2, and controls the wear temperature to a predetermined temperature.
つぎにこの装置により、半導体ウェア１表面に形成され
たポリイミド樹脂をキュアベークする方法について説明
する。Next, a method of curing and baking the polyimide resin formed on the surface of the semiconductor ware 1 using this apparatus will be described.
表面にポリイミド樹脂が形成された半導体ウェハ４をウ
ェハ支持体３にセントする。電源５から誘導コイル２に
電力を供給し、半導体ウェハ４に電磁気を作用させ、磁
気損失により、半導体ウェハ４内部から加熱する。加熱
温度は温度センサ６゜制御部７．電源部５．誘導コイル
２のクローズトループ制御により、所定温度にコントロ
ールされる。一定温度で所定時間加熱すると、半導体ウ
ェハ４の表面上に形成されたポリイミド樹脂をキュアベ
ークする。A semiconductor wafer 4 having a polyimide resin formed on its surface is placed on a wafer support 3. Power is supplied from the power source 5 to the induction coil 2, electromagnetism is applied to the semiconductor wafer 4, and the semiconductor wafer 4 is heated from inside due to magnetic loss. The heating temperature is determined by a temperature sensor 6° and a control unit 7. Power supply section 5. The temperature is controlled to a predetermined value by closed loop control of the induction coil 2. When heated at a constant temperature for a predetermined time, the polyimide resin formed on the surface of the semiconductor wafer 4 is cure-baked.
このように、本発明では半導体ウェハの電磁気損失によ
り、ウェア・内部から加熱されるため、加熱効率がよく
、短時間で加熱される。In this way, in the present invention, the semiconductor wafer is heated from inside the ware due to electromagnetic loss, so the heating efficiency is high and the heating can be done in a short time.
また、本発明はポリイミド樹脂のキュアベークに限定さ
れることなく、ホトレジストベーク処理。Further, the present invention is not limited to curing baking of polyimide resin, but also applies to photoresist baking processing.
脱水ベーク処理、アニール処理、不純物拡散処理をはじ
め、各種の加熱を伴なう半導体装置製造処理方法ならび
に装置に適用可能である。The present invention is applicable to various semiconductor device manufacturing processing methods and apparatuses that involve various types of heating, including dehydration bake treatment, annealing treatment, and impurity diffusion treatment.
さらに、加熱方法も誘導コイルに限定されることなく、
平行電極方式で平行電極間に高周波電力を印加してもよ
く、マイクロ波を照射してもよい。Furthermore, the heating method is not limited to induction coils.
High frequency power may be applied between parallel electrodes using a parallel electrode method, or microwaves may be irradiated.
以上のように本発明によれば、電磁損失効果なを持つ半
導体物質を含む、あらゆる物質を効率よく加熱すること
かり能である。As described above, according to the present invention, it is possible to efficiently heat all materials including semiconductor materials having electromagnetic loss effects.
なお、こ扛らのことにより、加熱処理時間の短縮化、装
置構造の簡素化、小形化が可能であり、自動化、連続化
が容易に期待でき、エネルギーの省力化も向上できる。In addition, due to these factors, it is possible to shorten the heat treatment time, simplify the structure of the device, and downsize the device, and automation and continuity can be easily expected, and energy savings can also be improved.
図面は本発明の一実施例による要部断面図。
１・・・炉、２・・・誘導コイル、３・・・ウェア・支
持体、４・・・半導体ウェア・、訃・・電源、６・・・
温度センサ、７・・・制御部。
代理人 弁理士 薄 １）利 幸The drawing is a sectional view of a main part according to an embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Furnace, 2... Induction coil, 3... Wear/Support, 4... Semiconductor wear, Death... Power supply, 6...
Temperature sensor, 7...control unit. Agent Patent Attorney Susuki 1) Toshiyuki
Claims (1)
電磁気損失により、半導体物質を加熱することを特徴と
する半導体装置の製造方法。 ２、前記半導体物質の表面には被膜か形成されているこ
とを特徴とする特許請求の範囲第１項記載の半導体装置
の製造方法。 ３、被加熱物を収容する電磁気シールドされた炉と、こ
の炉内の被加熱物に電磁誘導を起こさせる誘導コイルと
、被加熱物の温度をモニタする温度センサと、温度セン
サの情報等に基いて誘導コイルを制御する制御部と、を
有する装置。[Claims] 1. A method for manufacturing a semiconductor device, which comprises applying electromagnetism to a semiconductor material and heating the semiconductor material due to electromagnetic loss of the semiconductor material itself. 2. The method of manufacturing a semiconductor device according to claim 1, wherein a film is formed on the surface of the semiconductor material. 3. An electromagnetically shielded furnace that houses the object to be heated, an induction coil that causes electromagnetic induction in the object to be heated in the furnace, a temperature sensor that monitors the temperature of the object to be heated, and information on the temperature sensor, etc. A control unit that controls an induction coil based on the control unit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4276782A JPS58161318A (en) | 1982-03-19 | 1982-03-19 | Method of production of semiconductor device and apparatus for use in this method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4276782A JPS58161318A (en) | 1982-03-19 | 1982-03-19 | Method of production of semiconductor device and apparatus for use in this method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58161318A true JPS58161318A (en) | 1983-09-24 |
Family
ID=12645123
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4276782A Pending JPS58161318A (en) | 1982-03-19 | 1982-03-19 | Method of production of semiconductor device and apparatus for use in this method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58161318A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0269932A (en) * | 1988-09-05 | 1990-03-08 | Hitachi Ltd | Device for heat treatment of semiconductor wafer and heat treating method |
| KR100332133B1 (en) * | 1995-03-14 | 2002-10-25 | 주식회사 하이닉스반도체 | High temperature test method of semiconductor device |
| CN112111785A (en) * | 2020-09-18 | 2020-12-22 | 北京北方华创微电子装备有限公司 | Semiconductor equipment and process chamber thereof |
-
1982
- 1982-03-19 JP JP4276782A patent/JPS58161318A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0269932A (en) * | 1988-09-05 | 1990-03-08 | Hitachi Ltd | Device for heat treatment of semiconductor wafer and heat treating method |
| KR100332133B1 (en) * | 1995-03-14 | 2002-10-25 | 주식회사 하이닉스반도체 | High temperature test method of semiconductor device |
| CN112111785A (en) * | 2020-09-18 | 2020-12-22 | 北京北方华创微电子装备有限公司 | Semiconductor equipment and process chamber thereof |
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