JPS5814535A - Purifying method for wafer - Google Patents
Purifying method for waferInfo
- Publication number
- JPS5814535A JPS5814535A JP11188281A JP11188281A JPS5814535A JP S5814535 A JPS5814535 A JP S5814535A JP 11188281 A JP11188281 A JP 11188281A JP 11188281 A JP11188281 A JP 11188281A JP S5814535 A JPS5814535 A JP S5814535A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- dust
- electrode
- plasma discharge
- remove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
Abstract
Description
【発明の詳細な説明】
本始明はウェハ上に付着した不要物、即ちゴミをウェハ
から除く、ウェハの清浄方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a wafer cleaning method for removing unnecessary matter, ie, dust, attached to the wafer from the wafer.
従来、ウェハ上のゴミを除去する方法としては、ウェハ
に窒素(14)ガスを吹き付けてゴミを吹きとばす方法
があったが、ゴ(がウェハに対して静電的に付着してい
る場合にはこれを除去することが、かなシ因難であった
。Conventionally, the method of removing dust on a wafer was to blow nitrogen (14) gas onto the wafer to blow the dust away, but if the dust was electrostatically attached to the wafer, It was difficult to remove this.
本発明は、従来のこのような欠点を解決して静電的に付
着したゴミまでも除去し得る方法を提供することを目的
とする。かかる目的は1本発明によればウェハ上に付着
した不要物をプラズマ放電によシ帯電させ静電界により
ウェハから遊離させることにより4にされる。SUMMARY OF THE INVENTION An object of the present invention is to provide a method that can overcome these conventional drawbacks and remove even electrostatically attached dust. According to the present invention, such objects are achieved by electrifying unnecessary substances attached to the wafer by plasma discharge and releasing them from the wafer by an electrostatic field.
以下1図面を用いて本発明の一実施例を説明するO
図は本発明の冥施例を適用した装置を示す断面図である
。An embodiment of the present invention will be described below with reference to one drawing. The drawing is a sectional view showing an apparatus to which a second embodiment of the present invention is applied.
ウェハlにはゴミ2が付着しておシ、このウニ/−1は
電極3と番の間で、テフロン等の絶縁物5で頒覆された
電極4上にl1lcIicされているO電極番には直流
カット用のコンデンサ6とlsL56MHzの高周波電
源)の直列回路と、高周波カット用のチ嘗−クコイル8
と直流電源9の直列回路とが並列接続されて接地されて
いる。電極3も接地されている。There is dust 2 attached to the wafer l, and this sea urchin/-1 is attached to the O electrode number l1lcIic on the electrode 4, which is covered with an insulator 5 such as Teflon, between the electrode 3 and the number. is a series circuit of a capacitor 6 for DC cut and a high frequency power supply of lsL56MHz), and a check coil 8 for high frequency cut.
and the series circuit of the DC power supply 9 are connected in parallel and grounded. Electrode 3 is also grounded.
電極3.4やウニノ11を収容する容器10にはアルゴ
ン(ムr)ガスが尋人、排気されている。ここで、高周
波電源7により゛鴫極3.4間でプラズマ放電させると
、ゴミ2は一子により帯電する。Argon gas is evacuated into the container 10 that houses the electrodes 3.4 and the unit 11. Here, when plasma discharge is caused between the electrodes 3 and 4 by the high frequency power source 7, the dust 2 is charged by a single charge.
次いで直流電gA9によ〉電極1に負の直fL%圧を印
加するとクーロン反発によシボξ2はウェハから遊離す
る。これにより、従来除去することが―かしかったゴミ
も容易に除去することができる。Next, when a negative direct current fL% pressure is applied to the electrode 1 using a direct current gA9, the grain ξ2 is released from the wafer due to Coulomb repulsion. This makes it possible to easily remove dust that was previously difficult to remove.
図は本発明の一実施例を説明するための図である。
1: ウェハ 2: ゴミ(不要物)、3.4:
電 極、 フ: 高周波電源、9: 直流#lt源The figure is a diagram for explaining one embodiment of the present invention. 1: Wafer 2: Garbage (unnecessary material), 3.4:
Electrode, F: High frequency power supply, 9: DC #lt source
Claims (1)
せ静電界によりウェハから遊離させることを特徴とする
ウェハの清浄方法。A wafer cleaning method characterized by charging unnecessary substances attached to the wafer (by plasma discharge) and releasing them from the wafer by an electrostatic field.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56111882A JPH0732147B2 (en) | 1981-07-17 | 1981-07-17 | Wafer cleaning method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56111882A JPH0732147B2 (en) | 1981-07-17 | 1981-07-17 | Wafer cleaning method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5814535A true JPS5814535A (en) | 1983-01-27 |
JPH0732147B2 JPH0732147B2 (en) | 1995-04-10 |
Family
ID=14572511
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56111882A Expired - Lifetime JPH0732147B2 (en) | 1981-07-17 | 1981-07-17 | Wafer cleaning method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0732147B2 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60154621A (en) * | 1984-01-25 | 1985-08-14 | Hitachi Ltd | Vacuum treatment |
JPH03153885A (en) * | 1989-09-26 | 1991-07-01 | Applied Materials Inc | Method and device for reducing contamination of wafer particle |
US5328555A (en) * | 1992-11-24 | 1994-07-12 | Applied Materials, Inc. | Reducing particulate contamination during semiconductor device processing |
JP2007266261A (en) * | 2006-03-28 | 2007-10-11 | Tokyo Electron Ltd | Conveyance pick, conveyer device, substrate processing apparatus and cleaning method of the conveyance pick |
JP2011097068A (en) * | 2003-08-25 | 2011-05-12 | Tokyo Electron Ltd | Method of cleaning member in vacuum processing chamber and substrate processing apparatus |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5384563A (en) * | 1976-12-29 | 1978-07-26 | Fujitsu Ltd | Thin film pattern forming method |
JPS53124445A (en) * | 1974-01-22 | 1978-10-30 | Canon Inc | Developing fluid removing method |
-
1981
- 1981-07-17 JP JP56111882A patent/JPH0732147B2/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53124445A (en) * | 1974-01-22 | 1978-10-30 | Canon Inc | Developing fluid removing method |
JPS5384563A (en) * | 1976-12-29 | 1978-07-26 | Fujitsu Ltd | Thin film pattern forming method |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60154621A (en) * | 1984-01-25 | 1985-08-14 | Hitachi Ltd | Vacuum treatment |
JPH03153885A (en) * | 1989-09-26 | 1991-07-01 | Applied Materials Inc | Method and device for reducing contamination of wafer particle |
US5328555A (en) * | 1992-11-24 | 1994-07-12 | Applied Materials, Inc. | Reducing particulate contamination during semiconductor device processing |
JP2011097068A (en) * | 2003-08-25 | 2011-05-12 | Tokyo Electron Ltd | Method of cleaning member in vacuum processing chamber and substrate processing apparatus |
JP2007266261A (en) * | 2006-03-28 | 2007-10-11 | Tokyo Electron Ltd | Conveyance pick, conveyer device, substrate processing apparatus and cleaning method of the conveyance pick |
Also Published As
Publication number | Publication date |
---|---|
JPH0732147B2 (en) | 1995-04-10 |
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