JPS58142583A - Light emitting element - Google Patents

Abstract

PURPOSE:To alleviate current density and light emitting phase by forming the P-N junction in the region surrounded by groove so that it has a semi-spherical surface projecting downward at its center. CONSTITUTION:A light emitting element 1 provides the structure that an N type conductive layer 4 and N<+> type conductive layer 5 are formed with compound semiconductor on the P type conductive layer 3 consisting of compound semiconductor on the flat surface of domed compound semiconductor on the flat surface of domed compound semiconductor substrate 2. An annular groove 6 which reaches the layer 3 is formed at the center of main surface of element 1. The P-N junction 7 at the inside of groove 6 has the curved surface 13 where the center is concaved semi-spherically downward. The P-N junction 7 is exposed to the wall surface of internal circumference. Therefore, the junction surface 7 becomes wide almost up to two times and accordingly a current density is almost reduced to a half. In addition, difference between distance to the P-N junction surface and anode electrode 11 becomes small as indicated by the arrow mark. Thereby, a light emitting phase difference becomes small.

Description

[Detailed description of the invention] The present invention relates to detection elements, such as infrared light emitting elements.

As one of the infrared light emitting elements, dome-made infrared light emitting device is used as shown in the 1st FjAK. BACKGROUND ART Elements (hereinafter also simply referred to as elements) are known. This element 1 deposits a pill conductive layer 3 made of GaAIA ta on the flat surface of a dome-shaped GaAl film 2, and sequentially deposits M on this PWJ4 conductive layer 3.
W4111m4. Nl! lIIEm5 has L7tl
It's completely built. In addition, a ring-shaped (endless) groove 6 reaching up to the P conductive layer 3K is provided on the upper surface of the M ai1M conductive layer S, that is, in the center of the main surface of the element.

Therefore, the PI junction 7 formed by the junction between the PtjI conductive layer 3 and the M-type conductive layer 4 is exposed on the entire circumference of the groove 6. 1
7t, the P-type conductive layer 3 on the outer periphery of the groove 6 is made into a P+ type conductive layer 8 by diffusion treatment. The groove 6 is insulated 11.
i! It is assumed to be 9. Further, a cathode electrode 10 and an anode electrode 11 are provided on the Mw conductive layer 5 and the Pr1i conductive layer 8 outside the grooves 6, respectively. As shown in FIG. 2, the cando IIItlO is a circular electrode, and the anode electrode 11 is a horseshoe-shaped electrode. Then, by applying a predetermined voltage to both these electrodes, P
Light is emitted at the M junction 7 and emitted from the dome surface 12 to the outside of the tlA element.

By the way, in such an element, the X'M contact @-7
Since the diameter of the PM is as small as 100μm"6 or 160unφ, the current density is short (there is one point that the life is short. Therefore, in order to reduce the electric current flux, it is considered to increase the PM fold diameter). However, since the optical communication element KTo has a thin core of less than 5 ops of the 9x fiber, it is necessary to
II! A reduction of 18011 m in total 7 is desired.

Ota, P summer firefly meeting at large 1 < Lm field case C is the center 1llKrI of the P iris joint picture
1 and each wtomm is large 1 ((2110th arrow group reference 1
I) tkh or bii party phase is a big one (1j1. The central part will be obedient to the discovery of the problem device.
If IIm is present as tII, then the phase difference at the time of Maytsuchinda is incorrectly -11, given the lumeka wing rhythm in which the device measures iiiagil by the reflex sensation after sensation. To make it 10, it is true
There is one point where K#1IIIJI becomes 11k.

Therefore, one purpose of this invention is to provide a party vote with the electric plane book & and the discovery phase difference t@shu.

ζO-like ■Preparation for fishing tag - Compound IaI
The region O that is inserted by the one-end groove formed in the middle conductor group 1 [0 is the upper layer tSt- turtle region, the lower layer is the second conductive glue region, and the Frllll joint end is clearly formed on the inner periphery of the groove. In the detection element of the exposing structure.

The central part of the second guiding turtle 1 area blind or so O in the lower layer is hollow in the shape of a medium sphere, and the PM joint surface is 1lI- in the shape of a medium sphere. @Yt* Clarify.

FIG. 3 is a 1,000-dimensional cross-sectional view of one element according to the embodiment No. 1 of the present invention, and FIG.

This is from sno + 2 children (element) lfijll! lI't
'Similar to the conventional example shown, a P1111 conductor 11 consisting of a KGa membrane is placed on the flat surface of the dome-shaped oaaht membrane (conductor substrate in a compound) 2, and this OpH#l
KIIk next on electric layer 3 [4 electric M4. M ll tumor charge layer St
It has a structure made of G&M 8. is the length, M+
PW
A ring-shaped CIII end (#6) extending over the four turtle layers 3 is provided. The 119 joint surface in t%11160 has a downwardly spherical shape in the center. In addition, 1131m! Ai 1 is exposed on the 1st side of Hisashi O. Moreover, the P+ guiding turtle layer 8 is formed by the Pw guiding turtle layer 3 on the outer periphery of the wall 60 being subjected to a diffusion treatment Ill#IC. Furthermore, Kasumi 6 is l! As well as being popularized by edge bait 9, I@
A square cathode electrode 1i1G is provided on the conductive layer 6, and 7 nodes +uiit in a horse II shape are provided on the P+ glue conductive layer 8.

Next, we will explain how to make such a detection element.
I4! l! You can easily watch it using the following. Fourth
84 tas K Show f X sea urchin, m10 before LOOpm
31 ” 80 G Romu@14 with a thickness of several hundred μm 0
GaAj layer (G.

2) kW base plate wafer) IStF@, then m (main 1f) Kil phase epitaxial method! A conductive conductive layer 3 is formed by polishing the ridges 10 layers Kl'. After that, a medium spherical sardine 1 is placed in the center of the main surface of the Pj1 conductive layer 3.
6 by etching.

':>yvc, same l11m? As shown, an I11 conductive layer 4 and an H+H conductive layer 5 are sequentially formed on the upper surface of the 211 conductive layer 3 by the @ phase epitaxial method. The thickness of each! From a few pva to several pva. Since this OS, the P conductive layer 3 and the single-layer conductive layer 470fi41 have a central S projecting downward into a spherical shape on one side 13r'l! A 11M junction 7 is formed. After that, the depression was 161 pm! A P- conductive layer 8 is formed in which zinc (Zn) is diffused and transported to the P-water conductive layer 3.

Finally, as shown at +61 in the figure, a circular cathode electrode tor is provided on the M11 conductive layer 5, a horseshoe-shaped anode l1k11 is provided on the PM* conductive layer 8, and a P+ type conductive layer 8 and a conductive layer made of 11+ are provided. Interface area with layer 4.5! 6kl groove removed by Mort Mesa etching and filled with ring-shaped O removal part! ! ! 115 tons of wafers with 9 rims and 115 tons of wafer
- Each element is divided into parts and polished into a dome shape of 2t G4A/As to produce an element 1 having a dome surface of 12tW as shown in FIG.

The groove 6Kj [Ja] of the thread-like opening 1 is formed in the thick region, and the plug 7 formed in the central part thereof has a medium spherical shape -I013 that protrudes downward. For this reason, 2M1
Since the 11-go 1*7 is approximately twice as wide as the conventional ground wall, the electric KIF & will be approximately the same size. 11k, PM junction 7E
Since Ii protrudes downward and becomes **am, the difference in distance between each PM joint surface portion and the anode turtle @11 becomes smaller compared to the conventional case, as shown by the arrow in FIG. 3. Therefore, the light emission phase difference is smaller than that of the conventional device 9, and the device can be conveniently used as a light source for a distance measuring device.

In addition, the present invention is applicable to the above-mentioned real JIIlga KII! lI is not determined. For example, assuming that the entire Pm1m joint surface of the region srs in the groove is 1r4!1 spherical, PIg within a certain diameter
They may be summed to increase the area of the mating surfaces and to reduce the difference in O distance between each PIg mating surface and each part of the anode electrode 11. Furthermore, the present invention is also applicable to other conductors such as 0 and 0.

As described above, according to the present invention, it is possible to increase the @fltk of the current phase difference due to the increase in the pill surface area, thereby extending the life of the detection element. can be applied.

Explanation of drawings JIEI is a sectional view showing a conventional detection element, Fig. 2 is a perspective view from the opposite direction, and Fig. 3 is an mi1 diagram of a detection element according to the present invention. C.) is a sectional view showing the first manufacturing step of the detection element.

DESCRIPTION OF SYMBOLS 1...Element, 2...GaA7 integrated circuit, 3...P terminal conductive layer, 4...M111 conductive layer, 5...M+ type conductive layer, 6...groove, 7...・py*combination, 8...p +
g conductive layer, 1G... Kanto' electrode, 11... one anode pole, 13... curved surface, 16... depression.

Claims (1)

[Claims] 1. The upper layer of the region S formed by the non-electroconducting groove formed on the main surface of the conductive substrate in a compound is the first conductive lI type region, the lower layer is the second conductive IK# region, and the inner periphery l1lIII of the groove is made of PM. In a light-emitting element having a structure that exposes the bonding layer, the second conductive region t7tr;t of the front lower layer has a hemispherical depression in its center, and the bonding surface is a hemispherical curved surface. Jli former vote child.