JPS58131525A - Infrared-ray detector - Google Patents
Infrared-ray detectorInfo
- Publication number
- JPS58131525A JPS58131525A JP1352282A JP1352282A JPS58131525A JP S58131525 A JPS58131525 A JP S58131525A JP 1352282 A JP1352282 A JP 1352282A JP 1352282 A JP1352282 A JP 1352282A JP S58131525 A JPS58131525 A JP S58131525A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- infrared
- electrode
- voltage
- ray absorbing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001514 detection method Methods 0.000 claims description 2
- 238000010521 absorption reaction Methods 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 2
- 239000012535 impurity Substances 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000009413 insulation Methods 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Radiation Pyrometers (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は赤外線を検出する熱形赤外検知素子に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a thermal infrared sensing element that detects infrared rays.
第１図に本発明の基本的な素子構造を示す。例えはＮ形
シリコン基板で成るＮ層１にＰ型不純物を拡散等の手段
で部分的に１層２を作り、その１番こたとえば５１０２
Ｍ１で成る絶縁層３を設け１層上部の絶縁層３を除去し
て切欠部４を形成しこの切欠部４（こＰＩ３に接続する
電極５を設ける。更にその上に赤外線吸収膜６を設ける
。FIG. 1 shows the basic element structure of the present invention. For example, one layer 2 is partially formed by diffusing P-type impurities in an N-layer 1 made of an N-type silicon substrate, and the first layer 2 is, for example, 5102.
An insulating layer 3 made of M1 is provided, and the insulating layer 3 above one layer is removed to form a notch 4, and an electrode 5 connected to this notch 4 (this PI 3) is provided.Furthermore, an infrared absorbing film 6 is provided thereon. .
次に熱容量を小さくし、熱伝導を小さくする為、異方性
エツチング等により、下部より穴８をうがち、Ｐ−Ｎ接
続部７を１０〜５０μ程度の厚さ番こする。この様な構
造を有する素子９に第１図に示した様に、抵抗ｋを介し
て直列に電源ＥをＰ−Ｎ接合が順バイアスされる様に接
続する。Next, in order to reduce heat capacity and heat conduction, a hole 8 is etched from the bottom by anisotropic etching, and the P-N connection part 7 is etched to a thickness of about 10 to 50 .mu.m. As shown in FIG. 1, a power source E is connected in series to the element 9 having such a structure via a resistor k so that the PN junction is forward biased.
第２図にＰ−Ｎ接合の順方向電圧の温度特性を示すと温
度Ｔの上昇に伴い、電圧が低下する特性を示す。FIG. 2 shows the temperature characteristics of the forward voltage of the PN junction, showing that the voltage decreases as the temperature T increases.
すなわち、第１図に示した装置に赤外光が当たると、赤
外線吸収膜６により、吸収され、極めて薄く作られたＰ
−Ｎ接合部７の温度は上昇する。That is, when infrared light hits the device shown in FIG. 1, it is absorbed by the infrared absorbing film 6, and the P
The temperature of the -N junction 7 increases.
これに伴いＰ−Ｎ接合の順方向電圧が低下し、素子両端
の電圧降下として検出されるのである。As a result, the forward voltage of the PN junction decreases, which is detected as a voltage drop across the element.
第３図に別の実施例を示す。２回の拡散によりＰＮ接合
を形成し、多数の接合を直列に接続し、感度を上げたも
のである。Another embodiment is shown in FIG. A PN junction is formed by double diffusion, and a large number of junctions are connected in series to increase sensitivity.
以上、本発明はＮ層１に１層２を形成し、この上に絶縁
層３を形成し、上記絶縁層３の切矢部４番こ１層２に接
続する電極５を形成し、この電極５の土掻こ赤外線吸収
膜６を形成して成る素子８のＮ層１と電極５間に抵抗を
介して電圧を印加したことを特徴とする赤外線検出装置
であって現在のシリコンプロセスで極めて容易に作成出
来、しかも信号処理用ＩＣもワンチップ上に作成出来、
経済的効果も高いものである。As described above, in the present invention, one layer 2 is formed on the N layer 1, an insulating layer 3 is formed thereon, an electrode 5 is formed to be connected to the 1st layer 2 at the cut arrow part 4 of the insulating layer 3, and this electrode This is an infrared detection device characterized by applying a voltage via a resistor between the N layer 1 of the element 8 formed with the soil scraped infrared absorbing film 6 of No. 5 and the electrode 5. It is easy to create, and the signal processing IC can also be created on one chip.
It is also highly economical.
第１図はこの発明の一実施例に係り、断面図で示した素
子とこれを組込んだ回路回路図で第２図は特性を示すグ
ラフで第３図はこの発明の他の実施例に係り断面図で示
した素子とこれを組込んだ回路図である。
１・・・・・Ｎ＠ ５・・・・・亀 極２・・
・・・Ｐ 層 ６・・・・・赤外線吸収膜３
・・・・・絶縁層 ８・・・・・累 子４・・・
・切欠部FIG. 1 is a cross-sectional view of an element and a circuit diagram incorporating the same, FIG. 2 is a graph showing characteristics, and FIG. 3 is a diagram showing another embodiment of the invention. It is a circuit diagram incorporating an element shown in a sectional view and the element. 1...N@ 5...Kame Kiwami 2...
...P layer 6...Infrared absorbing film 3
... Insulating layer 8 ... Seiko 4 ...
・Notch
Claims (1)
成し、上記絶縁層３の切欠部４Ｉこ１層２に接続する電
極５を形成し、この電極５の上に赤外線吸収膜６を形成
して成る素子８のＮ層１と電極５間に抵抗を介して電圧
を印加したことを特徴とする赤外線検出装置。(1 layer 2 is formed on the 11N layer 1, an insulating layer 3 is formed on this, an electrode 5 is formed on the notch 4I of the insulating layer 3 and connected to the first layer 2, and an infrared ray is formed on the electrode 5. An infrared detection device characterized in that a voltage is applied between an N layer 1 of an element 8 formed with an absorption film 6 and an electrode 5 via a resistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1352282A JPS58131525A (en) | 1982-01-31 | 1982-01-31 | Infrared-ray detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1352282A JPS58131525A (en) | 1982-01-31 | 1982-01-31 | Infrared-ray detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58131525A true JPS58131525A (en) | 1983-08-05 |
Family
ID=11835480
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1352282A Pending JPS58131525A (en) | 1982-01-31 | 1982-01-31 | Infrared-ray detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58131525A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4948963A (en) * | 1983-09-28 | 1990-08-14 | The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdon Of Great Britain And Northern Ireland | Thermal detector |
| EP0601561A1 (en) * | 1992-12-08 | 1994-06-15 | Terumo Kabushiki Kaisha | Photoelectric device |
| US5589688A (en) * | 1994-11-30 | 1996-12-31 | Terumo Kabushiki Kaisha | Infrared radiation sensor |
| USRE36136E (en) * | 1986-07-16 | 1999-03-09 | Honeywell Inc. | Thermal sensor |
| USRE36615E (en) * | 1985-09-30 | 2000-03-14 | Honeywell Inc. | Use of vanadium oxide in microbolometer sensors |
| USRE36706E (en) * | 1988-11-07 | 2000-05-23 | Honeywell Inc. | Microstructure design for high IR sensitivity |
| JP2008528987A (en) * | 2005-01-26 | 2008-07-31 | アナログ・デバイシズ・インコーポレーテッド | Sensor |
-
1982
- 1982-01-31 JP JP1352282A patent/JPS58131525A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4948963A (en) * | 1983-09-28 | 1990-08-14 | The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdon Of Great Britain And Northern Ireland | Thermal detector |
| USRE36615E (en) * | 1985-09-30 | 2000-03-14 | Honeywell Inc. | Use of vanadium oxide in microbolometer sensors |
| USRE36136E (en) * | 1986-07-16 | 1999-03-09 | Honeywell Inc. | Thermal sensor |
| USRE36706E (en) * | 1988-11-07 | 2000-05-23 | Honeywell Inc. | Microstructure design for high IR sensitivity |
| EP0601561A1 (en) * | 1992-12-08 | 1994-06-15 | Terumo Kabushiki Kaisha | Photoelectric device |
| US5589688A (en) * | 1994-11-30 | 1996-12-31 | Terumo Kabushiki Kaisha | Infrared radiation sensor |
| JP2008528987A (en) * | 2005-01-26 | 2008-07-31 | アナログ・デバイシズ・インコーポレーテッド | Sensor |
| JP2013083669A (en) * | 2005-01-26 | 2013-05-09 | Analog Devices Inc | Sensor |
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