JPS58128776A - Manufacture of sic semiconductor film - Google Patents
Manufacture of sic semiconductor filmInfo
- Publication number
- JPS58128776A JPS58128776A JP57012193A JP1219382A JPS58128776A JP S58128776 A JPS58128776 A JP S58128776A JP 57012193 A JP57012193 A JP 57012193A JP 1219382 A JP1219382 A JP 1219382A JP S58128776 A JPS58128776 A JP S58128776A
- Authority
- JP
- Japan
- Prior art keywords
- film
- sic
- adsorption
- solar cell
- application
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 239000004065 semiconductor Substances 0.000 title claims description 3
- 150000002894 organic compounds Chemical class 0.000 claims abstract description 8
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 claims abstract description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 229920001296 polysiloxane Polymers 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 239000012535 impurity Substances 0.000 claims description 2
- 229920002379 silicone rubber Polymers 0.000 claims description 2
- 239000004945 silicone rubber Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 15
- 229920001971 elastomer Polymers 0.000 abstract description 5
- 238000001179 sorption measurement Methods 0.000 abstract description 5
- 239000010409 thin film Substances 0.000 abstract description 5
- 229910052796 boron Inorganic materials 0.000 abstract description 4
- 238000005530 etching Methods 0.000 abstract description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 2
- 229910052698 phosphorus Inorganic materials 0.000 abstract 2
- 239000011574 phosphorus Substances 0.000 abstract 2
- 239000012299 nitrogen atmosphere Substances 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0312—Inorganic materials including, apart from doping materials or other impurities, only AIVBIV compounds, e.g. SiC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
- H01L31/204—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System including AIVBIV alloys, e.g. SiGe, SiC
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
【発明の詳細な説明】
本発明は８１０半導体ａｔの製造方法に係り、と５ｈｔ
ｔｓｔｃ太−電池の製造方法に−する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing an 810 semiconductor at, and a 5ht
To a method for manufacturing a TSTC thick battery.
従東、８１０太陽電池の製造方法としては、基板ＫＥｉ
ｉｋ （モノシラン）とメタンガスの混合気体Ｏプラ
ズマ励起状態からのＦｊ１０薄膜形薄膜形成酸％式％
しかし、上記従来技術の欠点は、プラズマＪ６］ＩＩ郷
に時間を費する岬によ艶貴意性に向かず安価な太−電池
ＯＩｌ造かで舞ないといら欠点があつえ。As for the manufacturing method of Junto and 810 solar cells, the substrate KEi
ik (monosilane) and methane gas mixture O plasma from excited state to Fj10 thin film type thin film formation acid % Formula % However, the drawback of the above conventional technology is that it is difficult to use the plasma J6] II to spend time on the cape. It is not suitable for use with cheap thick battery oil construction, but it has drawbacks.
本尭−の目的は、上１欠点をなくし、貴意性に富んだ安
価なり１（３太陽電池の製造方法をＩＩＩ供することＫ
ある。The purpose of this project is to eliminate the above drawbacks and provide a highly valuable and inexpensive manufacturing method for solar cells.
be.
上記目的を達成するための本発明の基本的構成は、少な
くとも８１（シリコン）とＯ（炭素）を蟲量含有せるテ
トラメチルシランやシリコーン曝ゴム等のシリコーン系
有機化合物を焼成することにヨー、多結晶ま九はアモル
ファス５ｉｃ（シリコーンオーバイト）Ｈシよび抄ん、
ポロン岬の導電−決定不純物を含有せるＳＩＣ膜を一層
以上の積層状−で膜状ｍあるいけ基板上Ｃ）膜状態とし
て形成することを％黴とする。The basic structure of the present invention for achieving the above object is to sinter a silicone-based organic compound such as tetramethylsilane or silicone-exposed rubber containing at least 81 (silicon) and O (carbon) in an extremely large amount. Polycrystalline Maku is amorphous 5ic (silicone obite) H-shi,
The conductivity of Cape Poron is defined as the formation of a SIC film containing impurities in a laminated form of one or more layers on a substrate.
以下本発明を実施例により具体的に詳述する。The present invention will be specifically explained in detail below using examples.
第１図は不発＃４による８１０太陽電池Ｃ・製造方法の
一例を示したものであり 、（ａｌ基板１けステンレス
板であ抄、伽）その上にりんを分子構造の一部書えは添
加剤として含有せるテトラメチルシランやシリ；−ンＱ
ゴム＃によるシリコーン系有機化合物薄膜２を吸着、Ｗ
ｋ布、貼付は処理＃により彫成後、（ｅ）その上にボロ
ンを分子構造の一部まえは添加剤として含有せるテトラ
メチルシラン中シリコーン・ゴム等によるシリコーン系
有機化舎愉薄震５會吸着、塗布、貼付は処ｍ郷によ拳形
成後、＠）６００℃以上８００℃震度の書素雰囲気で焼
成するとシリコーン・ゴム系薄膜中の水嵩酸分はガス化
して１１れ、〉んを含んだＭ瀞の８１０多結晶まえけア
モルファス膜４とボロンを含んだＰＩｌの８１０多結蟲
またはアモルファス膜５とが元の膜２．３より体積収縮
をシζして岸威される。←）更に１紀Ｐ−Ｍ４１合１１
Ｋメす、エッチ＠４を（フレオン・プラズマ処理等によ
拳形威し、透明電ｆＩ７としての酸化インジウム膜をマ
スク蒸着法等によ■Ｉして８１０太陽電池か形成される
。Figure 1 shows an example of the manufacturing method of 810 solar cell C using unexploded #4. Tetramethylsilane and silicone Q contained as additives
Adsorption of silicone organic compound thin film 2 by rubber #, W
K cloth, pasted after engraving with treatment #, (e) on it, silicone-based organic compound made of silicone rubber etc. in tetramethylsilane containing boron as an additive before part of the molecular structure 5 Adsorption, coating, and pasting are carried out after the formation of a fist.When fired in an atmosphere with a seismic intensity of 600°C or higher and 800°C, the water-volume acid content in the silicone/rubber thin film is gasified and becomes 11. The 810 polycrystalline amorphous film 4 containing M and the 810 polycrystalline or amorphous film 5 containing boron are reduced in volume compared to the original film 2.3. ←) Furthermore, 1st period P-M41 go 11
The 810 solar cell is formed by etching the K-metal and etching@4 (by Freon plasma treatment, etc.) and applying an indium oxide film as a transparent conductor fI7 by a mask evaporation method, etc.
以上の如く、本発明によると、執着、Ｉｋ瑯あるいけ貼
付けおよび焼成と云う貴書性に向いえ方法によ抄日１０
膜のｐ−Ｎ９合が％便に形成で舞るえめ、低コストのＥ
ｌｉ Ｏ太陽電池の製作が可能となる効果かある。As described above, according to the present invention, the printing date is 10 by a method suitable for the nature of the book, such as attaching, pasting and firing.
A low-cost E
This has the effect of making it possible to manufacture LiO solar cells.
第１１５ｋ）〜（ｅ）は本発明による８１０太陽電池Ｉ
ｌ炸工薯の一例を工ＩＩｊｌｌＩＫＩＩＦ１面図として
示し九本ので参る。
１・・・・・・基板
２・・・・・・シリコーン系有機化合物膜Ｉ３・・・・
・・シリコーン系有機化合物膜璽４・・・・・・ＭＷ８
１０膜
５・・・・・・Ｐ型上Ｃ膜
６・・・・・・メサエッチ震
７・・・・・・透明電極
以 上
出願人 株式会社 −訪精工金
代理人 弁理士 最上 務No. 115k) to (e) are 810 solar cells I according to the invention
An example of a 1-bun construction is shown as a front view of the 1st floor of the 1st floor plan, and is shown in 9 pages. 1...Substrate 2...Silicone organic compound film I3...
...Silicone organic compound film seal 4...MW8
10 Membrane 5...P-type C film 6...Mesaetch Seismic 7...Transparent electrode or more Applicant: Hosei Kokin Co., Ltd. Agent Patent Attorney Tsutomu Mogami
Claims (1)
せるテトラメチルシランやシリコーン・ゴム等のシリコ
ーン系有機化合物を鉾威することにより、多結晶中たは
ア毫ルツアス８１０（シリコンカー）罵イド）膜シよび
妙ん、ボロン勢の導電−決定不純物を含有せるＢ１０膜
を一層匂上の積層状部で、あるいは基板上の膜状態とし
て形成することを４１１書とするｓｉｃ半導体装置の製
造方法。By using silicone organic compounds such as tetramethylsilane and silicone rubber, which have at least a large amount of Gi (silicon) and C (carbon), polycrystalline medium or aluminum 810 (silicon car) Id) Production of SIC semiconductor devices in which a B10 film containing conductivity-determining impurities of the boron group is formed as a layered layer on a layer or as a film on a substrate as described in 411. Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57012193A JPS58128776A (en) | 1982-01-28 | 1982-01-28 | Manufacture of sic semiconductor film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57012193A JPS58128776A (en) | 1982-01-28 | 1982-01-28 | Manufacture of sic semiconductor film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58128776A true JPS58128776A (en) | 1983-08-01 |
Family
ID=11798564
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57012193A Pending JPS58128776A (en) | 1982-01-28 | 1982-01-28 | Manufacture of sic semiconductor film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58128776A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003124483A (en) * | 2001-10-17 | 2003-04-25 | Toyota Motor Corp | Photovoltaic element |
-
1982
- 1982-01-28 JP JP57012193A patent/JPS58128776A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003124483A (en) * | 2001-10-17 | 2003-04-25 | Toyota Motor Corp | Photovoltaic element |
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