JPS58128146A - Absorbing agent - Google Patents
Absorbing agentInfo
- Publication number
- JPS58128146A JPS58128146A JP57011205A JP1120582A JPS58128146A JP S58128146 A JPS58128146 A JP S58128146A JP 57011205 A JP57011205 A JP 57011205A JP 1120582 A JP1120582 A JP 1120582A JP S58128146 A JPS58128146 A JP S58128146A
- Authority
- JP
- Japan
- Prior art keywords
- inorg
- volatile
- silane
- treatment agent
- silicate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Treating Waste Gases (AREA)
- Solid-Sorbent Or Filter-Aiding Compositions (AREA)
Abstract
Description
【発明の詳細な説明】
本発明はシラン、ジポラ/、セレン化水素等の揮発性無
機水素化物、およびジクロルシラン、トリクロルシラン
等の揮発性無機ハロゲン化物O1k収処理剤に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a volatile inorganic hydride such as silane, dipora/hydrogen selenide, and a volatile inorganic halide O1k collection agent such as dichlorosilane and trichlorosilane.
例えば半導体工業におけるIO,18Iの製造1御で鉱
気相成長用、エツチング用、ドービンダ用あゐいは拡散
用として揮発性無機水素化物シよび揮発性無機ハロゲン
化物がガス状又は液状で使用されている。ところでこれ
らは、いずれも強い毒性をもっておシ、例えばシラ/は
空気中に微量漏れても空気中の酸素と激しく反応して燃
焼すゐ性質が6〕、またジボラン、セレン化水素、ゲル
マンは強い毒性のあることはよく知られている。For example, in the production of IO and 18I in the semiconductor industry, volatile inorganic hydrides and volatile inorganic halides are used in gaseous or liquid form for mineral phase growth, etching, dobindering, or diffusion. ing. By the way, all of these are highly toxic; for example, even if a small amount of silica leaks into the air, it reacts violently with oxygen in the air and burns6], and diborane, hydrogen selenide, and germane are highly toxic. It is well known to be toxic.
従ってその取扱いには細心の注意を要するが、例えば前
記し九半導体製造工程においては、廃ガス中にこれら有
害成分が含まれている丸め安全に処理することが要求さ
れている。このため、従来よプこれら有害成分の除去処
理方法として種々提案されているが、一般には有害成分
を苛性ソーダ(Na(JH)水溶液に吸収させる方法に
よってお9、有害成分を含む廃ガスを苛性ソーダ水溶液
と向流接触させて有害成分を苛性ソーダ水溶液に吸収除
去する湿式吸収法で処理しているのが普通である。Therefore, great care must be taken when handling them; for example, in the semiconductor manufacturing process mentioned above, waste gas containing these hazardous components must be safely disposed of. For this reason, various methods have been proposed to remove these harmful components, but in general, the waste gas containing harmful components is absorbed into a caustic soda (Na(JH)) aqueous solution. Normally, the treatment is carried out by a wet absorption method in which harmful components are absorbed and removed by an aqueous solution of caustic soda by bringing them into countercurrent contact with aqueous sodium hydroxide solution.
この方法によると安価な苛性ソーダで処理できる利点線
あるが、ガスの種類によって線充分な吸収除去効畢を得
る丸めに装置が大型化した9、大量の苛性ソーダ水溶液
が必要になる不都合があった。This method has the advantage that it can be treated with inexpensive caustic soda, but it has the disadvantages that depending on the type of gas, the equipment becomes large in order to obtain a sufficient absorption and removal effect9, and a large amount of aqueous caustic soda solution is required.
また有害成分吸収後の廃液がアルカリ性水溶液であるた
め取扱いに不便なほか、廃秦処塩に困難で6つたプ、ま
九七の運搬輸送費が高くなる等の欠点があり、処理量が
増大する程前記欠点が大きくなってくる。Furthermore, since the waste liquid after absorbing harmful components is an alkaline aqueous solution, it is inconvenient to handle, and there are also drawbacks such as difficulty in disposing of the waste salt, increasing transportation costs, and increasing the amount of treatment. The more you do this, the more the above-mentioned drawbacks become more serious.
本発明者等は上記事情に鑑み主として半導体製造1穆よ
りの廃ガス中の有害成分を効率よく除去することを目的
として種々考究し九結果、多孔性の無機ケイ酸塩を主成
分とすゐlj1m担体にアルカリ水溶液等を含浸させた
固型処理剤によゐと前記従来方法にない吸収効率の得ら
れることを見出し友。即ち本発明紘このような知見に基
づいてシッン、ジボツン、セレン化水素、ゲルマン等の
IR発性無機水素化物およびジクロルシラン、トリク■
ルシラン等の揮発性無機ハロゲン化物を1種以上含む廃
ガスを安全にかつ効率良く処理できる乾式吸収法による
固型処理剤に関し、第1の発明は多孔性の無機ケイ酸塩
を主成分とする固瀘担体にアルカリ水溶液を含浸、また
第2の発明は更にその上に過マンガン酸カリウム等の酸
化剤を含浸させることを特徴とするガス処理剤である。In view of the above circumstances, the inventors of the present invention have conducted various studies aimed at efficiently removing harmful components in waste gas mainly from semiconductor manufacturing, and have found that the main component is porous inorganic silicate. We discovered that by using a solid treatment agent made by impregnating a lj1m carrier with an aqueous alkaline solution, absorption efficiency not found in the conventional methods described above could be obtained. That is, the present invention is based on this knowledge and uses IR-emitting inorganic hydrides such as silane, dibotun, hydrogen selenide, and germane, as well as dichlorosilane and trichloride.
The first invention relates to a solid treatment agent using a dry absorption method that can safely and efficiently treat waste gas containing one or more volatile inorganic halides such as Lucilan, and the first invention is a solid treatment agent that is mainly composed of a porous inorganic silicate. The second invention is a gas treatment agent characterized by impregnating a solid filter carrier with an aqueous alkali solution, and further impregnating an oxidizing agent such as potassium permanganate thereon.
以下に本発明の詳細な説明する。The present invention will be explained in detail below.
本発明の構成の一つである固型担体としてはケイソウ土
、ケイ酸カルシウム、ベントナイト、鹿沼土等が使用で
きるが、種々実験を行なった結果ケイソウ土が最適であ
った。As a solid carrier which is one of the components of the present invention, diatomaceous earth, calcium silicate, bentonite, Kanuma earth, etc. can be used, but as a result of various experiments, diatomaceous earth was found to be optimal.
次にアルカリ水溶液としては苛性ソーダ(NaOH)、
苛性カリ(KUH)、水酸化カルシウム(Oa ((J
H)m)等あるが経済的な点で苛性ソーダが好ましい。Next, as the alkaline aqueous solution, caustic soda (NaOH),
Caustic potash (KUH), calcium hydroxide (Oa (J
Although there are H)m), etc., caustic soda is preferable from an economic point of view.
以上の点から、以下固型担体としてケイソウ土を、また
アルカリ水溶液として苛性ソーダ溶液を選定してシラン
を除去処理する場合について説明する。In view of the above points, the case where silane is removed by selecting diatomaceous earth as the solid carrier and selecting a caustic soda solution as the alkaline aqueous solution will be described below.
苛性ソーダ溶液の濃度は低過ぎるとシランと反応せず、
また高過ぎるとケイソウ土が溶解され、溶は良状態で紘
実際の使用にあ九〕扱いにくいので5〜50%(重量比
)としえ。If the concentration of the caustic soda solution is too low, it will not react with the silane,
Also, if the temperature is too high, diatomaceous earth will be dissolved and it will be difficult to handle the solution in good condition for practical use, so it should be set at 5 to 50% (by weight).
次にケイソウ土と苛性ソーダ溶液の混合重量比について
唸シランとの反応性を実験した結果、ケイソウ±IK対
し苛性ソーダ溶液を0.2〜2倍(重量比)とすると良
いことが確認された。このようにして製造した固臘処理
剤唸シッンのtlかジボツン、セレン化水素を吸収する
能力を有している。Next, as a result of an experiment on the reactivity with silane with respect to the mixing weight ratio of diatomaceous earth and caustic soda solution, it was confirmed that it is good to increase the caustic soda solution to 0.2 to 2 times (weight ratio) to diatomaceous earth ±IK. The hard scale treatment agent produced in this manner has the ability to absorb hydrogen selenide.
以下実施例1によって説明する。Example 1 will be explained below.
〔実施例1〕
ケイソウ±100gに104苛性ソーダ水溶液150g
を含浸させたものを内・径2 cm 、高さ5゜個の筒
に100g充てんし濃度10.5%のシラン濃度を測定
するとsppm以下となつ九。を九、出口濃度がsoo
ppmに達し九時を本処理剤の破過点として本発明処理
剤1−尚シのシラン吸収量を計算すると約26 ML/
11fで6つ九。[Example 1] 150 g of 104 caustic soda aqueous solution to ±100 g of diatomaceous
When 100 g of the silane impregnated with silane was filled into cylinders with an inner diameter of 2 cm and a height of 5 degrees, and the silane concentration at a concentration of 10.5% was measured, it was less than sppm. Nine, the outlet concentration is soo
The amount of silane absorbed by the treatment agent 1-1 of the present invention is calculated as the breakthrough point of the treatment agent at 9 o'clock when the amount of silane absorbed is approximately 26 ML/
Six nine in 11f.
以上の実施例を前記した従来の温式吸収法と比較すると
従来法ではシランと苛性ソーダとの反応比が通常シラン
:苛性ソーダ=1:1〜2であるのに対し、本処理剤の
場合にはシラン:苛性ソーダ=l:1〜1.6となり、
吸収除去効率が高く苛性ソーダの有効利用という点でも
、本処理剤#i湿式吸収法より優れている。一般に、湿
式吸収法でもシラ/と苛性ソーダとの接触条件を最適に
することによシ高い苛性ソーダの有効利用を実現できる
が、そのためには装置が繁雑、高価になった〕運転管理
が繁雑になる等の問題点を伴なうが本処理剤の場合に嬬
何ら条件を整えずとも最大の苛性ソーダ有効利用がなさ
れる。Comparing the above examples with the conventional hot absorption method described above, in the conventional method the reaction ratio of silane and caustic soda is usually 1:1 to 2 (silane:caustic soda), but in the case of the present treatment agent, Silane: Caustic soda = l: 1 to 1.6,
This treatment agent #i is superior to the wet absorption method in terms of high absorption and removal efficiency and effective use of caustic soda. In general, even with the wet absorption method, highly effective use of caustic soda can be achieved by optimizing the contact conditions between sila and caustic soda, but this requires complicated and expensive equipment and complicated operation management. Although there are problems such as, in the case of this treatment agent, the maximum effective use of caustic soda can be achieved without any conditions being set.
次に以上述べた本処理剤に更に酸化剤の水溶液を含浸さ
せるとよシ一層顕著な効果の得られることを実験的に確
認することができた。以下これについて説明する。Next, it was experimentally confirmed that a more significant effect can be obtained by further impregnating the present treatment agent described above with an aqueous solution of an oxidizing agent. This will be explained below.
酸化剤としては任意で東いが、望ましくは通常で有色で
あシ、反応すると変色するtのが便利である。この酸化
剤水溶液を含浸させ*4の紘前記処理剤と同じようにシ
ラン、ジボラン、セレン化水素を吸収できるほかゲルマ
ンをも吸収できる1更にジボラン、セレン化水素の吸収
に顕著な効果がある。以下酸化剤として過マンガン酸カ
リウムを選定した場合につき実施例2によって説明する
。The oxidizing agent may be optional, but it is preferably a colored oxidizing agent, which changes color upon reaction. Impregnated with this oxidizing agent aqueous solution, it can absorb silane, diborane, and hydrogen selenide in the same way as the aforementioned treatment agent, and can also absorb germane.1 Furthermore, it has a remarkable effect on absorbing diborane and hydrogen selenide. Example 2 will be described below regarding the case where potassium permanganate is selected as the oxidizing agent.
〔実施例2〕
下記(イ)、 (+:0の処理剤を内径2 cm 、高
さ50cIIiの筒に100g充てんし、次のケース1
.ケース2゜ケース3で実施し九。[Example 2] Fill a cylinder with an inner diameter of 2 cm and a height of 50 cIIi with 100 g of the processing agent (+:0) shown in (a) below, and carry out the following case 1.
.. Implemented in case 2 and case 3.
ケース1ニジラン10.5Lsを含む窒素ガスを流す。Case 1 Nitrogen gas containing 10.5 Ls of Nijiran is supplied.
ケ−x2 ニジ?y10.5%、 ジボラy5%を含む
窒素ガスを流す。Case x2 Niji? Flow nitrogen gas containing 10.5% y and 5% dibora y.
ケース3ニゲルマン5%を含む窒素ガスを流す。Case 3 Flow nitrogen gas containing 5% Nigelman.
げ)処理剤:ケイソウ±100gに10%苛性ソーダ溶
液150gを含浸させ丸もの
(ロ)処理剤:ケイソウ±100gに5gの過マンガン
酸カリウムを溶かし7’hl(l苛性ソーダ溶液150
gを含浸させた
もの
上記実施条件においてそれぞれのケースのガスを10
Go(1/!1ain fiシ、60分以内の排出ガス
中のシラン。ジボランおよびゲルマンの濃度を測定し九
処、区表の如き結果が得られ九。G) Treatment agent: Impregnate ±100 g of diatomaceous material with 150 g of 10% caustic soda solution.
Under the above operating conditions, the gas in each case was impregnated with 10 g.
Go (1/!1ain fi, silane in the exhaust gas within 60 minutes.The concentration of diborane and germane was measured and the results as shown in the table were obtained.
本実施例で明らかな過多処理剤(ロ)によって処通する
と、ジボツン、ゲルマンの除去に特に効果を示すことが
分かる。を九以上の吸収効果の他、過マンガン酸カリは
苛性ソーダのような塩基性中で酸化力が強くなシ好都合
になるほか酸化力の低下に従って紫色から順次緑色、茶
かつ色、白色と変化するので、処理剤の破過が外見から
一目で分るという効果がある。It can be seen that treatment with an excessive amount of the treatment agent (b), as shown in this example, is particularly effective in removing dirt and germane. In addition to the absorption effect of 9 or more, potassium permanganate has a strong oxidizing power in basic conditions such as caustic soda, which makes it suitable for use.As the oxidizing power decreases, the color changes from purple to green, brown, and then white. Therefore, breakthrough of the processing agent can be seen at a glance from the appearance.
以上述べ走通p本発明はきわめて簡単な構成によって、
シラン、ジボラン、セレン化水素、ゲルマン等の揮発性
無機水素化物および揮発性無機ハロゲン化物を乾式吸収
法によって効率よく処理できる処理剤に係るもので69
、その実施効果が大きいものである。特に半導体製造工
程の廃ガスを処理する場合、従来はアルシン、ホスフィ
ンを乾式で、シラン、ジボランを湿式で処理せざるを得
なかったが、本発明の提供によシ処理系を乾式で統一で
きるので装置の簡略化、小皺化をもたらすばかりか作業
の省力化も期待できる。As described above, the present invention has an extremely simple configuration, and
69 Relating to processing agents that can efficiently treat volatile inorganic hydrides and volatile inorganic halides such as silane, diborane, hydrogen selenide, and germane by dry absorption methods.
, its implementation effects are significant. In particular, when treating waste gas from semiconductor manufacturing processes, conventionally arsine and phosphine had to be treated dryly, and silane and diborane had to be treated wetly, but with the present invention, the treatment system can be unified to be dryly treated. Therefore, it is expected that not only the equipment will be simplified and the wrinkles reduced, but also labor saving will be achieved.
Claims (1)
アルカリ水溶液を含浸させて表ることを特徴とする揮発
性無機水素化物および揮発性無機710ゲン化物の吸収
処理剤。 2 多孔性の無機ケイ酸塩を主成分とするmm担体にア
ルカリ水溶液と共に酸化剤水溶液な含浸させてなること
を特徴とする揮発性無機水素化物および揮発性無機ハロ
ゲン化物の吸収処理剤。 龜 多孔性の無機ケイ酸塩を主成分とする固型担体がケ
イソウ出であることを特徴とする特許請求の範囲第1項
又は第2項記載の吸収処理剤。[Scope of Claims] 1. A volatile inorganic hydride and a volatile inorganic 710 genide, characterized in that they are expressed by impregnating a solid carrier mainly composed of a porous inorganic silicate with an alkaline aqueous solution. Absorption treatment agent. 2. An absorption treatment agent for volatile inorganic hydrides and volatile inorganic halides, which is obtained by impregnating a mm carrier mainly composed of a porous inorganic silicate with an aqueous alkali solution and an aqueous oxidizing agent solution. 3. The absorption treatment agent according to claim 1 or 2, wherein the solid carrier whose main component is a porous inorganic silicate is diatomaceous.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57011205A JPS58128146A (en) | 1982-01-27 | 1982-01-27 | Absorbing agent |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57011205A JPS58128146A (en) | 1982-01-27 | 1982-01-27 | Absorbing agent |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62293194A Division JPS63156537A (en) | 1987-11-20 | 1987-11-20 | Absorbent for waste gas containing harmful component |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58128146A true JPS58128146A (en) | 1983-07-30 |
JPH0257974B2 JPH0257974B2 (en) | 1990-12-06 |
Family
ID=11771510
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57011205A Granted JPS58128146A (en) | 1982-01-27 | 1982-01-27 | Absorbing agent |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58128146A (en) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60125233A (en) * | 1983-12-08 | 1985-07-04 | Mitsui Toatsu Chem Inc | High degree treatment of exhaust gas |
US4535072A (en) * | 1982-09-14 | 1985-08-13 | Nihon Sanso Kabushiki Kaisha | Absorbent for treating gases containing the materials used for semiconductor products and process of treating such gases with the same |
JPS60175522A (en) * | 1984-02-23 | 1985-09-09 | World Giken:Kk | Composition for treating waste gas during semiconductor manufacturing process |
JPS60187335A (en) * | 1984-03-07 | 1985-09-24 | Nippon Sanso Kk | Granular absorbent |
JPS6190726A (en) * | 1984-10-12 | 1986-05-08 | Nippon Paionikusu Kk | Removing agent |
JPS61129026A (en) * | 1984-11-27 | 1986-06-17 | Nippon Paionikusu Kk | Purification of exhaust gas |
JPS6372338A (en) * | 1986-09-16 | 1988-04-02 | Sadaka Sonobe | Adsorbent for harmful gas |
JPS63156537A (en) * | 1987-11-20 | 1988-06-29 | Nippon Sanso Kk | Absorbent for waste gas containing harmful component |
JPS63214321A (en) * | 1987-02-28 | 1988-09-07 | Koujiyundo Silicon Kk | Treatment of gas containing silicon compounds |
DE4243389A1 (en) * | 1992-12-21 | 1994-06-23 | Sued Chemie Ag | Process for the production of sorbents for the absorption of liquids |
WO1998013138A1 (en) * | 1996-09-27 | 1998-04-02 | W.R. Grace & Co.-Conn | Adsorbent compositions for odor removal |
EP1087906A1 (en) * | 1998-04-09 | 2001-04-04 | UHP Materials, Inc. | Preparation and purification of diborane |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5067784A (en) * | 1973-10-23 | 1975-06-06 |
-
1982
- 1982-01-27 JP JP57011205A patent/JPS58128146A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5067784A (en) * | 1973-10-23 | 1975-06-06 |
Cited By (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4784837A (en) * | 1982-09-14 | 1988-11-15 | Nihon Sanso Kabushiki Kaisha | Absorbent for treating gases containing the materials used for semiconductor products and process of treating such gases with the same |
US4535072A (en) * | 1982-09-14 | 1985-08-13 | Nihon Sanso Kabushiki Kaisha | Absorbent for treating gases containing the materials used for semiconductor products and process of treating such gases with the same |
JPS60125233A (en) * | 1983-12-08 | 1985-07-04 | Mitsui Toatsu Chem Inc | High degree treatment of exhaust gas |
JPH0419886B2 (en) * | 1983-12-08 | 1992-03-31 | Mitsui Toatsu Chemicals | |
JPS60175522A (en) * | 1984-02-23 | 1985-09-09 | World Giken:Kk | Composition for treating waste gas during semiconductor manufacturing process |
JPS6331252B2 (en) * | 1984-02-23 | 1988-06-23 | Waarudo Giken Kk | |
JPS60187335A (en) * | 1984-03-07 | 1985-09-24 | Nippon Sanso Kk | Granular absorbent |
JPS6190726A (en) * | 1984-10-12 | 1986-05-08 | Nippon Paionikusu Kk | Removing agent |
JPH0417082B2 (en) * | 1984-10-12 | 1992-03-25 | Japan Pionics | |
JPS61129026A (en) * | 1984-11-27 | 1986-06-17 | Nippon Paionikusu Kk | Purification of exhaust gas |
JPH0457368B2 (en) * | 1984-11-27 | 1992-09-11 | Japan Pionics | |
JPS6372338A (en) * | 1986-09-16 | 1988-04-02 | Sadaka Sonobe | Adsorbent for harmful gas |
JPS63214321A (en) * | 1987-02-28 | 1988-09-07 | Koujiyundo Silicon Kk | Treatment of gas containing silicon compounds |
JPH0378132B2 (en) * | 1987-11-20 | 1991-12-12 | Nippon Oxygen Co Ltd | |
JPS63156537A (en) * | 1987-11-20 | 1988-06-29 | Nippon Sanso Kk | Absorbent for waste gas containing harmful component |
DE4243389A1 (en) * | 1992-12-21 | 1994-06-23 | Sued Chemie Ag | Process for the production of sorbents for the absorption of liquids |
WO1998013138A1 (en) * | 1996-09-27 | 1998-04-02 | W.R. Grace & Co.-Conn | Adsorbent compositions for odor removal |
US5858909A (en) * | 1996-09-27 | 1999-01-12 | W. R. Grace & Co.-Conn. | Siliceous oxide comprising an alkaline constituent |
EP1087906A1 (en) * | 1998-04-09 | 2001-04-04 | UHP Materials, Inc. | Preparation and purification of diborane |
EP1087906A4 (en) * | 1998-04-09 | 2005-11-09 | Uhp Materials Inc | Preparation and purification of diborane |
KR100731836B1 (en) * | 1998-04-09 | 2007-06-25 | 허니웰 인터내셔널 인코포레이티드 | Preparation and purification of diborane |
Also Published As
Publication number | Publication date |
---|---|
JPH0257974B2 (en) | 1990-12-06 |
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