JPS58125828A - Electron-beam exposure device - Google Patents

Abstract

PURPOSE:To enable exposure of every kind from single exposure information by providing a sectional form varying means, an electron-beam position deflection means, the polarity inverting means of the addition and addition signals of the designated signals of form and positions and a deflection-signal changeover means. CONSTITUTION:Signals are given to a register 11 from a computer 10 having the exposure information of a specific pattern 21 in a mask pattern 20, and D/A converted 13, beams are deflected 8, and rectangular form and size are changed through a slit 5, and signals are given to a register 12, D/A converted 14 and deflected 9, and the position of projection is determined and the figure 21 is exposed at a position CX. When switches 16, 18 are changed over and the signals of the registers 11, 12 are added 15, D/A converted, polarity-inverted 17 and deflected 9, the origin A of the mask pattern 20 shifts to A', and the inversion pattern 21' of the pattern 21 can be exposed directly. According to the constitution, an inversion pattern and a rotary pattern can be exposed without preparing a plurality of information only by changing the switches over, and cost for exposure can be reduced.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electron beam exposure apparatus, and more particularly to an electron beam exposure apparatus that is capable of shaping the cross-sectional shape of an electron beam projected onto a material to be exposed into a rectangle, and further changing the size of the rectangle arbitrarily. This invention relates to improvements in beam exposure equipment.

2. Description of the Related Art In recent years, as semiconductor devices have become highly integrated, electron beam exposure apparatuses have been used as a means of manufacturing the devices.

The usage of the electron beam exposure apparatus can be broadly classified into three types: reticle manufacturing, mask manufacturing, and direct exposure of silicon or other wafers. When a mask is manufactured using electron beam exposure and a wafer is optically exposed using the mask, the electron beam irradiation surface during mask manufacturing is usually placed opposite the wafer, and light is emitted through the mask. is projected onto the wafer. Therefore, the mask pattern drawn on the mask M plate by the electron beam and the pattern exposed on the wafer by optical exposure using the mask are horizontally reversed, vertically reversed, or rotated 180 degrees depending on how the mask is reversed. Become something.

By the way, a pattern previously formed on a wafer by an optical exposure method using a mask may be formed directly on the wafer by electron beam exposure without using a mask method. In this case, it is impossible to use the converted exposure data for mask manufacturing using an electron beam exposure device from the initial graphic pattern due to the above-mentioned inversion or rotation of the pattern. The graphic data is converted again to create data for direct exposure of the wafer using an electron beam exposure system.

This data conversion process takes a long time and increases the cost of the manufactured device.

Note that the above-described pattern inversion or rotation also occurs in the darkness between the mask pattern and the reticle pattern.

The present invention has been made in view of the above-mentioned points, and the cross-sectional shape of the electron beam projected onto the material to be exposed is shaped into a rectangular shape.
Furthermore, the present invention provides an electron beam exposure apparatus that can arbitrarily change the size of a rectangle, and can perform reticle exposure, mask exposure, and direct exposure to a wafer using a single exposure data.

The present invention provides an electron beam exposure apparatus in which the cross-sectional shape of the electron beam is rectangular, a cross-sectional shape variable means capable of arbitrarily changing the size of the rectangular cross-section based on a size designation signal, and an electron beam of the rectangular cross-section. electron beam deflection means for projecting the beam to a desired position on the material to be exposed based on the position designation signal; addition means for adding the size designation signal and the position designation signal; It comprises an inverting circuit for inverting the polarity of a signal, and a signal switching means for switching between the position designation signal and the inverted addition signal and supplying the same to the electron beam deflection means.

Embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

In FIG. 1, 1 is an electron gun, and the electron beam generated from the electron gun 1 is passed through a first slit 3 by a converging lens.
irradiated on top. The first slit raft 3 is provided with a rectangular opening, and the electron beam passing through the opening is imaged onto the second slit 5 by the imaging lens 4. The second slit 5 is also provided with a rectangular opening, and only the electron beam passing through the opening is projected onto the material to be exposed 7 by the projection lens 6. An electrostatic deflection plate 8 is provided between the first slit 3 and the second slit 5, and the electron beam position on the second slit 5 is changed by deflection of the electron beam by the electrostatic deflection plate 8. changes, and in accordance with this change, the cross-sectional shape and size of the electron beam passing through the second slit 5 are changed. The electron beam that has passed through the opening of the second slit 5 is projected onto the material 7, and the projection position is changed depending on the signal supplied to the positioning deflection plate 9. Signals are supplied to the two types of deflection plates 8 and 9 described above from a computer 10, and the computer 10 supplies signals specifying the rectangular shape and size of the electron beam to the buffer 7 register 11, and A signal specifying the electron beam projection position is supplied to the buffer register 12. The signal supplied to the register 11 is sent to the DA converter 1.
3 to the deflection plate 8, and the signal supplied to the register 12 is sent to the deflection plate 9 via the D-A converter 14.
Furthermore, the signals of both registers are added in an adder circuit 15, and the added signal is configured to be supplied to the DA converter 14 via a switch 16. The signal converted by the D-A converter 14 is also supplied to an inverting circuit 17 and its polarity is inverted, but the output signal of the D-A converter 14 and the inverted signal are Either one is supplied to the deflection plate 9.

Although the present invention is implemented with the configuration described above, FIG. 1 shows only the configuration for deflecting the electron beam in the X direction, and
The configuration for deflecting the electron beam in the direction is not shown for the purpose of simplifying the explanation. Now, with the above configuration, a specific element pattern 2 in the mask pattern 20 as shown in FIG.
1, data converted for mask exposure is input into the computer 10 in advance. The computer 10 supplies the register 11 with a signal specifying the -larger length of the pattern 21 in the X direction.
2 is supplied with a signal specifying the mcx with the X direction of the pattern 21. The signal stored in the register 11 is converted into an ablog signal by the DA converter 13 and then supplied to the deflection plate 8 to deflect the electron beam. As a result, the electron beam having a magnitude of PX in the X direction is Material 7 passes through the slit 5 of 2.
is projected on. Further, the electron beam is deflected according to a signal supplied from the register 12 to the deflection plate 9, and is projected onto a designated position Cx in the X direction.

When exposing a wafer using a mask manufactured by the above-described exposure method, the mask is, for example, reversed in the X direction, but when the same exposure is performed by direct exposure with an electron beam as shown in FIG. In the apparatus, only switches 16 and 18 are changed, and the computer 10 is still receiving the data used for mask exposure. The signals set in the buffer registers 11 and 12 by switching the switches 16 and 18 are added in the adder circuit 15 and then supplied to the DA converter 14, and the analog signal converted by the DA converter 14 is The polarity is inverted in the inverting circuit 17,
It is supplied to the deflection plate 9.

Therefore, the coordinate origin A of the mask pattern shown in FIG. 2 moves to the position A' as shown in FIG. 3 due to the polarity inversion by the inversion circuit 17. As for the mask pattern 21 in FIG. 2, its position signal is the output (P
Therefore, as shown in FIG. 3, the shape is the same as the pattern 21 at a position 1 away from the origin in the X direction by (PX0CX).

The pattern 21- of the size is exposed, and the pattern 20- of FIG. 3 is obtained by inverting the mask pattern 20 of FIG. 2 in the X direction.
is exposed directly onto the wafer by an electron beam.

In this way, in the embodiment described in F, it is possible to perform exposure inverted in the X direction by simply switching a switch, compared to exposure with the same exposure data, and new exposure data for the inverted exposure can be performed. There is no need to create
As a result, manufacturing costs for VLSI devices and the like can be reduced. In addition, - in the above-mentioned embodiment, a pattern reversed in the X direction is exposed, but when the pattern is reversed in the Y direction,
A deflection method that adds two types of signals that specify the size and length of a rectangular pattern in the Y direction) and the position of the pattern in the Y direction, and inverts the added signal to deflect the electron beam in the Y direction. Just supply it to the board. In addition, when exposing a pattern rotated by 180 degrees, it is sufficient to simultaneously supply the X-direction addition signal and the Y-direction addition signal to the X-direction deflection plate and the Y-direction deflection plate, respectively. Furthermore, although we have described the case in which the wafer is directly exposed with an electron beam using data for mask exposure, it is also possible to perform mask exposure using data for direct exposure, and furthermore, it is also possible to perform mask exposure using data for direct exposure. The present invention can also be applied to.

FIG. 4 shows an example in which the position signal of rectangular pattern data is the center position of the pattern.
In the figure, the same parts as in FIG. 1 are given the same numbers, and detailed explanation thereof will be omitted. In this embodiment, when data of the pattern shown in FIG. 5 is input to the computer 10, when exposing the pattern 30, the center position OX in the X direction is supplied from the buffer 7 register 12 to the subtraction circuit 25 and the addition circuit 26. Ru. The circuits 25 and 26 also receive a magnitude signal QX in the X direction of the pattern 30 from the buffer register 11 of 1.
The signal is supplied via a bit shift register 27, which shifts the input data by one bit and reduces the signal size to 1/2. Therefore, the subtraction circuit 25
The output of the crimping circuit 26 becomes 0X-QX/2, and the output of the tightening circuit 26 becomes OX+QX/2. Only one of the two river power signals is supplied to the DA converter 14 by a switch 16. Now]
If the data input to the computer 1 is for mask exposure and exposure is to be performed according to this data, the output signal of the subtraction circuit 25 is supplied to the deflection plate 9 via the DA converter 14, and the signal related to, for example, the pattern 30 is , T t, t xh orientation I
An electron beam with a desired shape and size is projected onto (OX-QX/2).

On the other hand, when exposing a pattern that is reversed in the X direction with respect to the pattern shown in FIG. is supplied to the deflection plate 9.

As a result, pattern 3o NiIll L, T Hax
Direction 1F-(OX+QX/2)t: A rectangular electron beam is projected, and an inverted pattern 30' shown in FIG. 6 is exposed.

As described in detail above, the present invention allows exposure of an inverted pattern or a rotated pattern without preparing a plurality of data. Note that the present invention is not limited to the embodiments described above, and can be modified in many ways. For example, although digital signals are decorated or subtracted, addition or subtraction may be performed using analog signals.

In addition, in the inverting circuit, the polarity of the added signal is inverted, but the polarity of the two types of signals to be added is inverted, and then,
It may be configured to add. Furthermore, in the embodiments described above, exposure of an inverted pattern in one field was explained, but for example, when a single chip consists of multiple fields and the chip pattern is inverted, the pattern in each field is inverted. The method described above is used, and the inversion between each field may be separately controlled by a computer.

[Brief explanation of drawings]

1 and 4 are block diagrams showing one embodiment of the present invention, FIGS. 2 and 5 each show a mask pattern, and FIG. 3 shows a pattern that is an inversion of the pattern in FIG. 2. The figure shown in FIG. 6 is a diagram showing a pattern obtained by inverting the pattern of FIG. 5. 1: Electron gun, 2: Converging lens, 3: First slit, 4
: Imaging lens, 5: Second slit, 6: Projection lens,
7: Material to be exposed, 8: Electrostatic deflection plate, 9: Positioning deflection plate, 10: Computer, 11.12: Buffer register, 13, 14: D-A converter, 15: Adding circuit, 16
: Switch, 17: Inverting circuit, 18: Switch. Patent applicant JEOL Ltd. Representative Tadao Kishi Kase 4th

Claims (1)

[Claims] A cross-sectional shape variable means that allows the cross-sectional shape of the electron beam to be rectangular and arbitrarily changes the size of the rectangular cross-section based on a size designation signal; an electron beam deflection means for projecting the electron beam to a desired position above, a caulking means for adding the size designation signal and the position designation signal, and an inversion circuit for substantially reversing the polarity of the addition signal. and signal switching means for switching between the position designation signal and an inverted addition signal to supply the electron beam deflection means.