JPS58122734A - 半導体装置の製法 - Google Patents

半導体装置の製法

Info

Publication number
JPS58122734A
JPS58122734A JP57004265A JP426582A JPS58122734A JP S58122734 A JPS58122734 A JP S58122734A JP 57004265 A JP57004265 A JP 57004265A JP 426582 A JP426582 A JP 426582A JP S58122734 A JPS58122734 A JP S58122734A
Authority
JP
Japan
Prior art keywords
etching
acid
water
photoresist
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57004265A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0139210B2 (https=
Inventor
Tadashi Saito
正 齋藤
Osamu Mikami
修 三上
Hiroshi Nakagome
弘 中込
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP57004265A priority Critical patent/JPS58122734A/ja
Publication of JPS58122734A publication Critical patent/JPS58122734A/ja
Publication of JPH0139210B2 publication Critical patent/JPH0139210B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H10P50/646—Chemical etching of Group III-V materials

Landscapes

  • Weting (AREA)
JP57004265A 1982-01-14 1982-01-14 半導体装置の製法 Granted JPS58122734A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57004265A JPS58122734A (ja) 1982-01-14 1982-01-14 半導体装置の製法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57004265A JPS58122734A (ja) 1982-01-14 1982-01-14 半導体装置の製法

Publications (2)

Publication Number Publication Date
JPS58122734A true JPS58122734A (ja) 1983-07-21
JPH0139210B2 JPH0139210B2 (https=) 1989-08-18

Family

ID=11579704

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57004265A Granted JPS58122734A (ja) 1982-01-14 1982-01-14 半導体装置の製法

Country Status (1)

Country Link
JP (1) JPS58122734A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002161747A (ja) * 2000-09-18 2002-06-07 Denso Corp 液冷式内燃機関の冷却装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002161747A (ja) * 2000-09-18 2002-06-07 Denso Corp 液冷式内燃機関の冷却装置

Also Published As

Publication number Publication date
JPH0139210B2 (https=) 1989-08-18

Similar Documents

Publication Publication Date Title
US3738880A (en) Method of making a semiconductor device
US4554050A (en) Etching of titanium
JP3467411B2 (ja) エッチング液，その製造方法及びエッチング方法
US4230522A (en) PNAF Etchant for aluminum and silicon
JP3217556B2 (ja) シリコン及びシリコン化合物の選択エッチングを含む集積回路作製方法
US5472562A (en) Method of etching silicon nitride
US3867218A (en) Method of etching a pattern in a silicon nitride layer
US3437533A (en) Method of fabricating semiconductor devices
US3649395A (en) Methods of etching semiconductor body surfaces
JPS58122734A (ja) 半導体装置の製法
US3994817A (en) Etchant for etching silicon
JP3366238B2 (ja) クロム膜のエッチング方法
JPH0883792A (ja) エッチング剤及びエッチング方法
JPS61271839A (ja) パタ−ン形成方法
JPH05299810A (ja) 配線パターン形成用エッチング溶液
JPS6317773B2 (https=)
US4004957A (en) Method for etching silicon
JPH0629252A (ja) 半導体装置の製造方法
JPS6281041A (ja) 素子分離領域の形成方法
JPS63258020A (ja) 素子分離パタ−ンの形成方法
JPH0666385B2 (ja) 半導体装置の製造方法
KR100205439B1 (ko) 실리콘 습식 식각방법
JPH0541372A (ja) シリコン酸化膜のウエツトエツチング方法
JPS59179149A (ja) ＩｎＰ陽極酸化膜のエツチング方法
JPS60206041A (ja) 半導体集積回路装置の製造方法