JPS58119676A - Linked solar battery - Google Patents
Linked solar batteryInfo
- Publication number
- JPS58119676A JPS58119676A JP57001707A JP170782A JPS58119676A JP S58119676 A JPS58119676 A JP S58119676A JP 57001707 A JP57001707 A JP 57001707A JP 170782 A JP170782 A JP 170782A JP S58119676 A JPS58119676 A JP S58119676A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- solar cell
- solar battery
- junction
- mixed crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 claims abstract description 18
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 239000012535 impurity Substances 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 abstract description 9
- 239000000758 substrate Substances 0.000 abstract description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 6
- 230000035945 sensitivity Effects 0.000 abstract description 4
- 230000003595 spectral effect Effects 0.000 abstract description 4
- 125000005842 heteroatom Chemical group 0.000 abstract 2
- 229910000673 Indium arsenide Inorganic materials 0.000 abstract 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 241000270666 Testudines Species 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 101150023010 smu1 gene Proteins 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0687—Multiple junction or tandem solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、多層へテロ接合から成る太陽電池に関し、特
に各層半導体の禁止帯幅、格子定数の１＆遍化をはかる
ことにより、光電変換効率を高めた連結太陽電池に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a solar cell comprising a multilayer heterojunction, and more particularly to a connected solar cell in which the photoelectric conversion efficiency is increased by making the forbidden band width and lattice constant of each layer semiconductor uniform by 1 and 1. It is something.
従来の太陽電池は例えば第１図（４）またはω）に示す
ように構成されていた。A conventional solar cell was constructed as shown in FIG. 1 (4) or ω), for example.
すなわち、第１図（４）に示すように、従来の太陽電池
の多くはＳ１νＧｍＡｇの同一材料から成るｐｚ Ｍ合
ｌを有する構造で構成されていた。これらの単一半導体
を用いている限りは、太陽光エネルギーを有効利用でき
ず、特に半導体の禁止帯幅より低千ネルギーの光は光起
電力に寄与し得ず、光電変換効率は一数弊が限界である
等の欠点があった。That is, as shown in FIG. 1 (4), most conventional solar cells have a structure having a pz M alloy made of the same material S1νGmAg. As long as these single semiconductors are used, solar energy cannot be used effectively, and in particular, light with an energy lower than the forbidden band width of the semiconductor cannot contribute to photovoltaic power, and the photoelectric conversion efficiency is extremely low. There were drawbacks such as limitations.
また、第７図の）に示すように、太陽光に対するスペク
トル感度を拡大し、高効率化をはかる目的で、”０．１
ムｊ６．、ム−のｐｍ接合−を有する上部太陽電池Ｊと
ＧａＡｓのｐｍ接合ダを有する下部太陽電池ＳとをＧ＆
。０．ムｊ０．．ムｌのｐｍ接合から成るトンネル接合
６を介して接続した連結太陽電池も提案されている。In addition, as shown in Figure 7), in order to expand the spectral sensitivity to sunlight and increase efficiency,
Muj6. , an upper solar cell J having a GaAs pm junction and a lower solar cell S having a GaAs pm junction.
. 0. Muj0. ．． Connected solar cells have also been proposed which are connected via tunnel junctions 6 consisting of multilayer pm junctions.
しかし、この連結太陽電池においては、上部電池３およ
び下部電池ｊの構成材料Ｇａ ｏ、ａ Ａ、ｌ □、２
Ａ−およびＧａＡｓの格子定数整合の最適化ははから
れてはいるものの、禁止帯幅が各々／ｊｊ ＠Ｖおよび
／、４Ｉ３・Ｖであるため、太陽光スペクトルの内、長
波長光は光起電力に寄与し得す、従って太陽光エネルギ
ーを有効利用できず、光電変換効率は理論的にも約３０
％、実験上でも７５％と低いなどの欠点があった。However, in this connected solar cell, the constituent materials of the upper cell 3 and the lower cell j are Ga o, a A, l □, 2
Although efforts have been made to optimize the lattice constant matching of A- and GaAs, the band gaps are /jj @V and /, 4I3·V, respectively, so long wavelength light in the sunlight spectrum is Therefore, solar energy cannot be used effectively, and the photoelectric conversion efficiency is theoretically about 30%.
%, which was low at 75% even in experiments.
本発明は、これらの欠点を除去するためになされたもの
で、その目的は、多層へテ四接舎から成る太陽電池にお
いて、各層牛導体材料の禁止帯幅および格子定数の最適
化をはかることにより、太陽光に対す漬スペクトル感度
を拡大させた高効率の連結太陽電池を提供することにあ
る。The present invention has been made to eliminate these drawbacks, and its purpose is to optimize the forbidden band width and lattice constant of the conductor material of each layer in a solar cell consisting of a multilayer structure. The object of the present invention is to provide a highly efficient connected solar cell with expanded spectral sensitivity to sunlight.
かかる目的を達成するために、本発明でｕ、ＧａムＳ。In order to achieve such an objective, in the present invention, GaM S.
ＩｍＰ ＃ ＩｎＡｓあるいはＧ・の半導体基板上に混
晶Ｇａ１−ｙＩｍｙ人−（ｙ −０，／！ｒ〜０．ｋＯ
）から成るｐｍ接合により下部太陽電池を構成し、混晶
ｌ＊ １−３ｈ１．Ａ４ （ｘ−０，社”ｗＯ，４ｋ
）から成るｐｍ接合により上部太陽電池な構成し、該上
部太陽電池と前記下部太陽電池とを前記混晶半導体に高
不純物濃度で不純物を添加して威るド接合で連結する＠
以下に、図面を参照しながら、実施例を用いて本発明の
詳細な説明するが、かかる実施例は本発明の例示に過ぎ
ず、本発明の範囲内で種々の改良や変形があり得ること
は勿論である。ImP # Mixed crystal Ga1-yImy-(y-0,/!r~0.kO
), the lower solar cell is constructed by a pm junction consisting of mixed crystal l* 1-3h1. A4 (x-0, company”wO, 4k
), and the upper solar cell and the lower solar cell are connected by a dejunction made by doping the mixed crystal semiconductor with a high impurity concentration. The present invention will be described in detail using examples with reference to the following, but these examples are merely illustrative of the present invention, and it goes without saying that various improvements and modifications may be made within the scope of the present invention. .
第一図は本発明連結太陽電池の基本構成を示す。ここで
は、Ｇａｐｓ ｅ ｌａｐ ｅ ｌｍＡｓあるいはＧ・
の態形半導体基板ｌｌ上に混晶Ｇｉ□−，Ｉ＋ａ、Ａｓ
（ｌ −０，／に〜０．２０ ）から成る１層／コｅｐ
ＮＩｉｓをヘテロエピタキシャル成長させ、それにより
形成されたｐｍ接合によって下部太陽電池／４’を構成
する。ｐ形Ｇａ１−、Ｉ！１゜ムＩＩ／Ｊ上に！亀□、
ム！、ム−（ｘｗ−０，参ｔ 〜ｏ、ｕ ）から成り、
不純物を高濃度で添加したｐ＠ｔｍよび３層／４の各々
膜厚にθＡ以下の薄層から成るトンネル接合１７を形成
し、このトンネル接合７７を介して、上部太陽電池／ｌ
と下部太陽電池！４＋とを接続する。上部太陽電池／ｌ
は、混晶”１−ｘムｊ、Ａｓ （ｘ −０，ｌｊ〜Ｏｊ
りから成る＊Ｍ／デおよびｐ層Ｘをヘテロエピタキシャ
ル成長させて得たｐｍ接合から成る太陽電池で構成でき
る。このように、本発明ではｄ＊１−ｘム１１ム腸の上
部太陽電池／ｌとＧａ□−、Ｉｎ、Ａｓの下部太陽電池
／１とをトンネル接合１７により接続して連結太陽電池
を構成する。Figure 1 shows the basic configuration of the coupled solar cell of the present invention. Here, Gaps e lap e lmAs or G・
Mixed crystal Gi□-, I+a, As
1 layer/coep consisting of (l −0, /~0.20 )
NIis is grown heteroepitaxially, and the pm junction formed thereby constitutes the lower solar cell/4'. p-type Ga1-, I! On 1゜mu II/J! Turtle□,
Mu! , Mu-(xw-0, reference t~o,u),
A tunnel junction 17 consisting of a thin layer of θA or less is formed in each of the p@tm and 3/4 layers doped with impurities at a high concentration, and the upper solar cell/l is formed through this tunnel junction 77.
And the lower solar cell! Connect with 4+. Upper solar cell/l
is a mixed crystal "1-xmuj, As (x -0,lj~Oj
It can be constructed from a solar cell consisting of a pm junction obtained by heteroepitaxially growing *M/de and p layer X consisting of . In this way, in the present invention, a connected solar cell is constructed by connecting the upper solar cell/l of d*1-xmu11m and the lower solar cell/1 of Ga□-, In, and As through the tunnel junction 17. do.
本発明による連結太陽電池においては、上部太陽電池／
１および下部太陽電池／ダを構成する混晶半導体材料Ｉ
！ｌ ｌ、ｘ Ａｌｘ Ａ−およびＧａニーｙ１亀ｙ
ム−の禁止帯幅がそれぞれ／ＪＮＪ、ｌ）・Ｖおよびθ
、デ〜ムコ・Ｖであり、上部太陽電池７ｇに入射する太
陽光コｌに対するスペクトル感度の拡大がはかられてお
り、理想的な連結太陽電池材料の禁止帯幅の組合せへ４
Ｊ＠Ｖ／θ、デｊ・■を包含し、光１変換効率は３０〜
ｑｏ％に達する。In the connected solar cell according to the present invention, the upper solar cell/
1 and the mixed crystal semiconductor material I constituting the lower solar cell/da
! l l, x Alx A- and Ganey y1 turtle y
The forbidden band widths of MU are /JNJ, l)・V and θ, respectively.
, De~muco・V, and the spectral sensitivity to solar light incident on the upper solar cell 7g is expanded, and the combination of the bandgap widths of the ideal coupled solar cell materials 4
Includes J@V/θ, dej・■, and the light 1 conversion efficiency is 30~
Reach qo%.
また、連紡太ｌｉ！電池を構成するＩｎ、−ａ−ム１８
＾・ｅ Ｇａ１−ｙ Ｉ ｎ ｙ Ａ−および半導体基
板結晶の格子定数の整合も極めて良い特長を有する。ま
た、本発明では、上部上限電池材料１ｎ１．Ａ％ムＳと
下部太陽電池材料Ｇａ１−、Ｉｎ、Ａｓとの格子定数の
不整合率はＱ、／ 〜１．０％程度と低く、ミスフィツ
ト転位の発生が少なく、下も抑制でき、以って高効率化
を達成できる。更に、本発明において、半導体基板結晶
ＧａＡｓ ｅ Ｉ！ｌＰ＃■ロムＳあるいはＧ・と下部
太陽電池材料ａ＆ １−、 Ｉ ＊ ３１１ ＡＩとの
格子定数の不整合率はｏ、ｒ −４１％程度と若干高い
が、半導体基板結晶上にＧａ１−ｙ ＩｎｙＡｍを組成
を変えながら傾な１成長させることにより、Ｇｍ１−、
Ｉｎ、Ａｓ層内へのミスフィツト転位の発生を抑制でき
、下部太陽′遊池内のキャリア収集効率の低下を抑制で
き、高効率化を達成できる。このようなＧａ１−ｙＩｍ
。Also, Renbota li! In, -a-m 18 constituting the battery
The lattice constant matching between the ^·e Ga1-y I n y A- and the semiconductor substrate crystal is also very good. Moreover, in the present invention, upper upper limit battery material 1n1. The mismatch rate of the lattice constants between A% Mu S and the lower solar cell materials Ga1-, In, and As is as low as Q,/~1.0%, and the occurrence of misfit dislocations is small and can be suppressed. high efficiency can be achieved. Furthermore, in the present invention, the semiconductor substrate crystal GaAs e I! The lattice constant mismatch rate between lP#■ROM S or G and the lower solar cell material a & 1-, I * 311 AI is slightly high at around o, r -41%, but it is By growing InyAm at an angle while changing its composition, Gm1-,
It is possible to suppress the occurrence of misfit dislocations in the In and As layers, suppress the decrease in carrier collection efficiency in the lower solar pond, and achieve high efficiency. Such Ga1-yIm
.
ム−の傾斜組成層は、半導体基板結晶としてＧａＡｓや
Ｇｏを用いた場合には、半導体基板結晶側から上部に向
けから低エネルギーのものに毅化するため、傾斜組成層
内に内蔵電界が発生し、キャリアの収集効率を高めるこ
とができるなどの利点も得られる。When GaAs or Go is used as the semiconductor substrate crystal, the gradient composition layer of Mu-1 changes to a lower energy layer from the semiconductor substrate crystal side upwards, so a built-in electric field is generated within the gradient composition layer. However, advantages such as being able to improve carrier collection efficiency can also be obtained.
このように、本発明の連結太陽電池は上部太陽電池およ
び下部太陽電池の禁止帯幅、格子定数の最適化がなされ
ており、従来の太陽電池に比べて高効率化がはかられて
いる。As described above, in the connected solar cell of the present invention, the forbidden band width and lattice constant of the upper solar cell and the lower solar cell are optimized, and higher efficiency is achieved than in conventional solar cells.
なお、以上の実施例においては、基板結晶／ｌにｎ形半
導体を用いた例について説明してきたが、本発明はこの
例にのみ限られず、ｐ形半導体を基板結晶／／に用いた
場合についても同様によく適用し得ることは明らかで、
その場合には各層の導電型を逆にすれば良い。In the above embodiments, an example in which an n-type semiconductor is used as the substrate crystal /l has been described, but the present invention is not limited to this example, and may also be applied to a case in which a p-type semiconductor is used in the substrate crystal //. It is clear that it can be applied equally well,
In that case, the conductivity type of each layer may be reversed.
以上説明したように、本発明連結太陽電池によれば、上
部太陽電池および下部太陽電池の禁止帯幅、格子定数の
最適化がはかられているので、従来の太陽電池に比べて
高効率であり、なおかつ下部太陽電池の傾斜組成層にお
ける内蔵電界も利用でき、キャリア収集効率を高めるこ
とができるなどの利点を有する。As explained above, according to the connected solar cell of the present invention, the forbidden band width and lattice constant of the upper solar cell and the lower solar cell are optimized, so it has higher efficiency than conventional solar cells. Moreover, it has the advantage that the built-in electric field in the graded composition layer of the lower solar cell can also be used, and carrier collection efficiency can be increased.
ハ・・ホモｐｎ接合、 コ・・・Ｇａ５．ｓム１０．
、ムリ１接会、３・・・上部太陽電池、 亭・・・Ｇ
ａＡｓ ｐ＊接合、ｊ・・・下部太陽電池、ト・・Ｇａ
６．ｓム１゜、、ムＳトンネル接合、／／ ・・・ｎ
（ｐ）形半導体基板結晶、／コー１（ｐ）形Ｇａ １＋
＋ｙ Ｉ ｍ ｙＡ Ｓ層、ｉ３・・・ｐ（ａ）形Ｇａ
１−．Ｉｎ、Ａｓ層、／ｌ−・−下部太陽電池、／３・
・・高不純物濃度添加Ｐ（１１）形ｆｌ−ｚム１１ム１
層、／ト・・高不純物濃度添加ｍ（ｐ）形ｒ ｍ １−
、ムＩ５ム１層、／７・・・Ｆンネル接合、 ｌト・
・上部太陽電池、／ｌ＝ ｎ （ｐ）形Ｉｍｔ−μｊ、
Ａｓ層、Ｘ）・・・ｐ （ｎ）形Ｉｎｋ−、ＡＪ、ムＳ
層、−ノ・・・太陽光。C...Homo pn junction, C...Ga5. smu10.
, Unreasonable 1st meeting, 3...Top solar cell, Tei...G
aAs p*junction, j...lower solar cell, g...Ga
6. smu1゜,,muS tunnel junction, //...n
(p) type semiconductor substrate crystal, /Co1(p) type Ga 1+
+y I m yA S layer, i3...p(a) type Ga
1-. In, As layer, /l-・-lower solar cell, /3・
... Highly doped P(11) type fl-z 11mu 1
Layer, /t...high impurity concentration doped m(p) type r m 1-
, MuI5mu1 layer, /7...F tunnel junction, lto...
・Top solar cell, /l=n (p) type Imt-μj,
As layer, X)...p (n) type Ink-, AJ, MuS
Layer, -no...sunlight.
特許出願人 日本電信電話公社 代理人弁理士 谷 義 −畠 第１図 ＜Ａ） （β）Patent applicant: Nippon Telegraph and Telephone Corporation Representative Patent Attorney Yoshi Tani - Hatake Figure 1 <A) (β)
Claims (1)
導体基板上に混晶Ｇａ１−ｙｌｎｙＡｍ （ｙ−０，
／！ 〜ＯＪＯ）から成るｐｍ接合により下部太陽電池
を構成し、混晶１ｍ１−！ムｌ、Ｍ（Ｘ−θ、ｑｓ −
ｏ、ｂｓ ）から成るｐｔ＋接合により上部太陽電池を
構成し、該上部太陽電池と前記下部太陽電池とを前記混
晶半導体に高不純物濃度で不純物を添加して成るｐｎ接
合で連結したことを特徴とする連結太陽電池。Mixed crystal Ga1-ylnyAm (y-0,
/! The lower solar cell is constructed by a pm junction consisting of ~OJO), and the mixed crystal 1m1-! Mul, M(X-θ, qs −
o, bs)), and the upper solar cell and the lower solar cell are connected by a pn junction formed by adding impurities to the mixed crystal semiconductor at a high impurity concentration. connected solar cells.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57001707A JPS58119676A (en) | 1982-01-11 | 1982-01-11 | Linked solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57001707A JPS58119676A (en) | 1982-01-11 | 1982-01-11 | Linked solar battery |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58119676A true JPS58119676A (en) | 1983-07-16 |
| JPS629237B2 JPS629237B2 (en) | 1987-02-27 |
Family
ID=11509017
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57001707A Granted JPS58119676A (en) | 1982-01-11 | 1982-01-11 | Linked solar battery |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58119676A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5009719A (en) * | 1989-02-17 | 1991-04-23 | Mitsubishi Denki Kabushiki Kaisha | Tandem solar cell |
-
1982
- 1982-01-11 JP JP57001707A patent/JPS58119676A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5009719A (en) * | 1989-02-17 | 1991-04-23 | Mitsubishi Denki Kabushiki Kaisha | Tandem solar cell |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS629237B2 (en) | 1987-02-27 |
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