JPS58119638A - Exposure device - Google Patents

Exposure device

Info

Publication number
JPS58119638A
JPS58119638A JP57001449A JP144982A JPS58119638A JP S58119638 A JPS58119638 A JP S58119638A JP 57001449 A JP57001449 A JP 57001449A JP 144982 A JP144982 A JP 144982A JP S58119638 A JPS58119638 A JP S58119638A
Authority
JP
Japan
Prior art keywords
wafer
mask
temperature
thermostatic
expansion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57001449A
Other languages
Japanese (ja)
Inventor
Mitsuaki Ito
光明 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP57001449A priority Critical patent/JPS58119638A/en
Publication of JPS58119638A publication Critical patent/JPS58119638A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875Temperature, e.g. temperature control of masks or workpieces via control of stage temperature

Landscapes

  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To contrive to reduce discrepancy of positioning according to the expansion and contraction mode in regard to the exposure device of a semiconductor wafer by a emthod wherein thermostatic chambers for the wafer and for a mask are furnished. CONSTITUTION:A carrier 1-2 for supply and accommodation of the wafer is accommodated in the thermostatic oven 1-1, and is connected to an wafer conveying unit by a conveying port 2-2 on the side of the thermostatic oven. Air is heated by a heater 2-6 to be circulated in the oven by a fan heater 2-7, and is exhausted from an exhaust hole 2-5. The temperatures of the thermostatic chamber 1-1, 1-3 for the wafer and the mask are set at the temperature the same with the temperature of an wafer attracting face at exposure time. By letting alone the wafer and the mask in the respective thermostatic ovens at least before 10min of use, because the temperatures of the wafer and the mask become to the temperature the same with the temperature of the wafer attracting face, discrepancy of positioning according to the expansion and contraction mode to be generated by thermal expansion is reduced.

Description

【発明の詳細な説明】 本発明に半導体ウェーハーの露光装置に関する。[Detailed description of the invention] The present invention relates to an exposure apparatus for semiconductor wafers.

半導体集積回路の高集積fFに伴い、*細加工技術の進
歩に著しい、現在でにフォト+3ツク2フイー][での
露光方式として、コンタクト方式、プロキシミイティ一
方式、70ジェクション方式及ヒレティクル使甲のステ
ップアンドIJビート方式等が実印に甲いられている。
With the highly integrated fF of semiconductor integrated circuits, *Remarkable progress has been made in microfabrication technology, and at present, photo + 3 x 2 fee] [exposure methods include contact method, proximity method, 70 injection method, and reticle method. The step and IJ beat method used by the master is included in the registered seal.

微細イしに伴うフォトIIツクラフイーの重曹な曲かの
一つに1位置合わせズレが挙げられ、特にコンタクト方
式とプロキシミイテイ一方式において顕著である。
One of the disadvantages of Photo II technology due to minute alignment is one position misalignment, which is particularly noticeable in contact type and proximity type.

位置合わせズレは通常、並進モード、回転モード、伸縮
モードに分解で勇る。このうち、並進と回転モードに1
位置合わせ時に側倒が可靜であるが、伸縮モードについ
てに制御が困難である。
Misalignment is usually resolved by breaking it down into translation mode, rotation mode, and expansion/contraction mode. Of these, 1 is in translation and rotation mode.
Although it is possible to tilt sideways during positioning, it is difficult to control the expansion/contraction mode.

この位置合わせズレの伸縮モードに形勢を与える原因と
して鹿党工程での温If差に伴うマスクとウェー−・−
の熱膨張による伸縮が最も型砂と潰えられる。
The cause of this misalignment that affects the expansion/contraction mode is the mask and wave caused by the temperature difference in the deer process.
Expansion and contraction due to thermal expansion is most likely to cause mold sand to collapse.

従来の細光工程では、マスクFj室内に置かれたマスク
&を庫に、またウェーハーにブレベーク後。
In the conventional thin light process, the mask & mask placed in the mask Fj room are stored, and then the wafer is bre-baked.

放冷もしくに強制的に室温まで冷却したものを露光装置
にセットし1a資を行っている。
The sample 1a is carried out by allowing the sample to cool or forcibly cooling it to room temperature and then setting it in the exposure apparatus.

ところでコンタクト露光装置を使用しての位置合わせ作
業中のマスクとウェーハーの温度81歴のm*から次の
事が明らかになった。蕗資装置に露光に1って階m′が
上昇し、 *jt時におけるマスク吸着面及びウェーハ
ー吸着面の温度に呈温工り2〜5℃高ぐなる。このため
マスクとウェー7・−Uマスク吸着面及びウェー−・−
吸着面との温度差に伴い熱膨張する。この熱膨張に伴う
伸縮に1って伸縮モードの位置合わせズレが起こ抄1合
わせ積電を著しく低下させている。
By the way, the following has become clear from the 81 temperature history m* of the mask and wafer during alignment work using a contact exposure device. The temperature of the mask suction surface and the wafer suction surface at the time of *jt increases by 2 to 5 degrees Celsius as the temperature rises by 1 per exposure in the heating equipment. For this reason, the mask and the wafer 7・-U mask suction surface and the wafer ・−
Thermal expansion occurs due to the temperature difference with the adsorption surface. The expansion and contraction associated with this thermal expansion causes misalignment in the expansion and contraction mode, which significantly reduces the sheet alignment.

一蚊にこのm1fffビに伴う伸縮モードを低下させる
ため、熱膨張傷数がガラスに比較しヤ小さな合成石英マ
スクを使片する方法が用いられているが0合成石英に高
価でありコスト的にTotり員い方法とFf言えない。
In order to reduce the expansion/contraction mode associated with this m1fff type, a method of using a piece of synthetic quartz mask, which has a smaller number of thermal expansion scratches than glass, has been used, but it is more expensive than synthetic quartz and is cost-effective. I can't say Ff is an expensive method.

本発明に以上の膚に無みてなされたものでめ如露光装置
にウェーハー及びマスク用の恒温槽を具備する事KLつ
て、伸縮モードの位置合わせズレを恢滅する事を目的と
する。
The present invention has been accomplished above and beyond the above, and it is an object of the present invention to provide an exposure apparatus with a constant temperature bath for wafers and masks, thereby eliminating misalignment in the expansion/contraction mode.

以下実跨−Iに基づいて本発明の詳細な説明する。The present invention will be described in detail below based on Practical Example-I.

第1図に、縛ft−装置内にマスク用恒温槽とウェー−
・−甲恒温栖を具備した事を特徴とする。コンタクト方
丈のII?装置でめる。1−1ijウエーハー甲恒温槽
の断面図であり、恒温槽内Kt−Jウェーハー供給及び
収−キャリア1−2を収納しておシー恒温槽横の搬送口
にLって、ウェーハー搬送ユニットと接続している。1
−5Fjマスク甲恒tS。
Figure 1 shows a constant temperature bath for masks and a wafer inside the ft-equipment.
・-It is characterized by being equipped with a constant temperature. Contact Hojo II? Use the device. 1-1ij is a sectional view of the wafer A constant temperature chamber, in which the Kt-J wafer supply and storage carrier 1-2 is stored in the constant temperature chamber, and the carrier 1-2 is connected to the transfer port next to the sheath constant temperature chamber and connected to the wafer transfer unit. are doing. 1
-5Fj Mask Kokou tS.

1−4i1rマヌク立て、1−51j繻?装置本体でる
・る・7 第2図B、  1−1 、1−5のつ、1−/%−及び
1-4i1r manuk stand, 1-51j satin? Apparatus main body 7 Figure 2B, 1-1, 1-5, 1-/%- and.

マスク恒温槽の構造を示すrIi図でるる。The rIi diagram shows the structure of the mask constant temperature bath.

2−1に開閉扉、2−2けウェーI・−搬送口。Opening/closing door at 2-1, 2-2 way I/-transport port.

2−6に断熱材ある。吸気孔2−4から吸入された?帽
も加熱ヒーター2−6で加熱されファンヒーター2−7
に工って槽内を循環して、#I気孔2−5から排出され
る。なお、  2−2rrマスク用恒温槽にに必曹ない
・ ウェーI・−及びマスタの恒温槽の温Krj、lllf
wlPKおけるウェーノー吸着面のi!寂と(ロ)−に
#?しておく。
There is insulation material in 2-6. Was it inhaled from intake hole 2-4? The cap is also heated by the heater 2-6, and the fan heater 2-7
It circulates in the tank and is discharged from #I pores 2-5. In addition, the temperature of the constant temperature bath for the 2-2rr mask is not required.
i of the Waeno adsorption surface in wlPK! Jakuto (b) -ni#? I'll keep it.

襄光に使用するウェーI・−とマスクに、使用する少な
(とも10分lvl前には恒温槽内に放置する。
Leave both the mask and the mask used for the light treatment in a constant temperature bath for 10 minutes before use.

この事によって、露光時におけるウェー−・−及びマス
ク温度に、ウェー−・−吸着面の温度とIWI−である
ため、熱豚張による伸縮モードの位置合わせズレが低減
し1合わせ積重が向上する事によって。
As a result, the temperature of the wave and the mask during exposure is equal to the temperature of the wave and adsorption surface, which reduces misalignment in the expansion/contraction mode due to thermal tensioning and improves one-align stacking. By doing.

高歩留りが得られる。High yield can be obtained.

崩″#装Wは運転開始時にに装置内温度が不安定fあり
、湯殿の安定イビのために、昼夜運転が望ましい。
Since the internal temperature of the collapse equipment W is unstable at the start of operation, it is desirable to operate it day and night to ensure stable boiling water.

」二連の如(1本発明に工れげ非常に平易な方法によっ
て1位置合わせ精度の向上が実現できる。
As shown in the following two series (1) As a result of the present invention, it is possible to improve the alignment accuracy by a very simple method.

zb本発明σ、コンタクト方丈の露光装置を。zbThe present invention σ, a contact square exposure device.

′4!!h伊1と【、て説明し九が、プロキシミイテイ
篇光方式、プロジエ々ジョン方式及びステップアンド1
1ヒート方式のimps省にも、tつた(一様に適応す
る事がでなる。
'4! ! 1 and 9 are the proxy method, project method, and step-and-1.
It can also be applied uniformly to one-heat type IMPS systems.

【図面の簡単な説明】[Brief explanation of the drawing]

檗11纂1tゴウエー・・−及びマスク用恒温槽を具備
した事を特がとするコンタクト方式の一資装置でおる。 第2Iソ1σ、ウェー−・−及びマスク用恒温槽の断面
しl −1’ #る。 1−1・・・ウエート一戸恒温槽 1−2・・・ウェー・・−供給及び収納ギヤ11丁1−
6・・・マスク用恒温槽 1−4・・・マスク立て 1−5・・・庫光装rA′本体 2−1・・・開閉扉 2−2・・・ウェー−・−搬送口 2−6・・・断熱材 2−4・・・吸気孔 2−5・・・抽気孔 2−6・・・加熱ヒーター 2−7・・・ファンヒーター 以上 出願人 株式会社 #肋精工舎 代理人 升理士 最上  梓
It is a contact-type equipment that is characterized by being equipped with 11 strings of bamboo and a thermostat for masks. The cross section of the second I so 1σ, wave and mask constant temperature bath is l −1′. 1-1...One weight constant temperature bath 1-2...Way...-Supply and storage gear 11 pieces 1-
6... Mask constant temperature bath 1-4... Mask stand 1-5... Storage light rA' main body 2-1... Opening/closing door 2-2... Way...-Transfer port 2- 6...Insulating material 2-4...Intake hole 2-5...Bleed hole 2-6...Heating heater 2-7...Fan heater and above Applicant: Co., Ltd. Agent Masu Physician Azusa Mogami

Claims (1)

【特許請求の範囲】[Claims] μ光ff:li&内に、膓党畦のウェーハー吸着面と同
−温石にセットしたマヌク甲恒温槽と、ウェーハー供給
及び収納ギヤ11了を穆うヤで、Iw光時のウェー・・
−e、着面ト同−m#にセットシタウェーハー用恒活、
°槽を共沸した事を%徴とする露光装置1t。
μ light ff: In the wafer suction surface of the wafer ridge, a constant temperature chamber set on the same hot stone as the wafer suction surface, and a wafer supply and storage gear 11 are installed.
-e, mounting surface same as -m# set for permanent wafer,
1 ton of exposure equipment that detects the azeotropy of the ° tank.
JP57001449A 1982-01-08 1982-01-08 Exposure device Pending JPS58119638A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57001449A JPS58119638A (en) 1982-01-08 1982-01-08 Exposure device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57001449A JPS58119638A (en) 1982-01-08 1982-01-08 Exposure device

Publications (1)

Publication Number Publication Date
JPS58119638A true JPS58119638A (en) 1983-07-16

Family

ID=11501745

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57001449A Pending JPS58119638A (en) 1982-01-08 1982-01-08 Exposure device

Country Status (1)

Country Link
JP (1) JPS58119638A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980042711A (en) * 1996-11-25 1998-08-17 요시다쇼이치로 Exposure device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980042711A (en) * 1996-11-25 1998-08-17 요시다쇼이치로 Exposure device

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