JPS58111358A - Swelling device for molded film on external lead of semiconductor device molded previously - Google Patents
Swelling device for molded film on external lead of semiconductor device molded previouslyInfo
- Publication number
- JPS58111358A JPS58111358A JP20913781A JP20913781A JPS58111358A JP S58111358 A JPS58111358 A JP S58111358A JP 20913781 A JP20913781 A JP 20913781A JP 20913781 A JP20913781 A JP 20913781A JP S58111358 A JPS58111358 A JP S58111358A
- Authority
- JP
- Japan
- Prior art keywords
- molded
- lead frames
- semiconductor device
- anode
- groups
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract description 21
- 230000008961 swelling Effects 0.000 title 1
- 239000007864 aqueous solution Substances 0.000 claims abstract description 7
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 2
- 239000002184 metal Substances 0.000 abstract description 7
- 229910052751 metal Inorganic materials 0.000 abstract description 7
- 238000005192 partition Methods 0.000 abstract 3
- 238000005868 electrolysis reaction Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000003082 abrasive agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 241000269821 Scombridae Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000007730 finishing process Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 235000020640 mackerel Nutrition 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000036244 malformation Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000011121 sodium hydroxide Nutrition 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
本発明社半導体装置製造工ｌ！において毫−ルド済み半
導体装置の外部リード上のモールド被膜除去の大めモー
ルド被膜をＩＮＩＩＩＩＪｔＬめるための装置に係るも
のである。[Detailed Description of the Invention] Semiconductor device manufacturing company l! This invention relates to an apparatus for removing a large mold coating on an external lead of a molded semiconductor device.
一般にリードフレームＯアイランド上にシリコン半導体
素子を接着し金細線などで半導体素子の端子とリードフ
レーム０外部リードトｅ ＃ ンｆ ング組立を行つ友
後、第１図の如く樹脂モールド１を施す・然る後完成半
導体装置Ｏ外部リードと１に着る部分２．３および連結
体（＃イパー）４．４’と外周連結体８．６０付−た１
１でモールド部以外を一般に錫、半田又は金などで仕上
げめっきを施して、半田付妙性、耐食性をよくシえる後
、上記連結体の大部分を除去して個々の完成半導体装置
として−る。しかし樹脂モールドを施す部分轄第１図の
＃線を施した部分１に局限されゐべ龜であるが、モール
ドｆＭｉおよびその消耗、リードフレームの炙形および
そＯ抜き加工による変形などで半導体装置０ＩＩＩＩ出
リードとなる部分２，３と連結体４でａすれ丸抱１ＩＩ
Ｉ（第２１で交着斜線で示す部分）にモールド充てん涙
７と″＆シ張り付いた砂、ま友その周辺や外部リードと
なる他Ｏ部分にモールド剤が食み出して被ｍ製が固着し
てしまう。かかるモールド済み半導体装置リードフレー
ムａから付着膜を除去する必要が生ずる。Generally, after bonding a silicon semiconductor element onto a lead frame O island and assembling the terminals of the semiconductor element and the lead frame external lead tongs using thin gold wires, etc., a resin mold 1 is applied as shown in Fig. 1. After that, a part 2.3 attached to the completed semiconductor device O external lead and 1, a connecting body (#iper) 4.4' and an outer peripheral connecting body 8.60 were attached.
In step 1, areas other than the molded parts are generally finished plated with tin, solder, or gold to improve solderability and corrosion resistance, and then most of the above-mentioned connectors are removed to form individual completed semiconductor devices. . However, the semiconductor device is limited to the part 1 marked with the # line in Fig. 1 where the resin mold is applied, and the mold fMi and its wear, deformation due to the lead frame's hot shape and its O punching process, etc. 0III The parts 2 and 3 that will become the output leads and the connecting body 4 are connected to
There is sand stuck to the mold filling tear 7 and ``I'' in I (the hatched area in No. 21), and the molding agent protrudes around Mayu and the O part that will become the external lead, causing the mold to be molded. It becomes necessary to remove the adhered film from the molded semiconductor device lead frame a.
これら付着膜が残存すると半導体装置の露出外部リード
の全面仕上げめつ愈を施す際に障害となる。仁の充てん
膜、被覆膜などの被膜を＃来すゐために、一般に研磨剤
を利用するサンドブラストや液体ホーニングを用いてこ
れらの１来を行っているが研磨剤によ抄外部リードに疵
をつけたり、また、削シ取られた金属粉の外部流出防止
のＪＩ＆理が必要となる欠点がある。また、バレルにモ
ールド済み半導体装置リードフレームと導電性ダミ一体
を混入して、これを苛性ソーダ又はシアン化ソーダなど
のアルカす性水溶液内蔵の浴槽に浸漬して回転すればバ
レル回転金属軸に半導体リードフレームとダミ一体は相
接して通電で璽る。バレル外にこれと対向するｉ１１極
板をｌＩ極としバレル回転による通電不均一とで効果は
均等に’＆らず、その後パフ研磨によ）強度のモールド
被換除夫作業を必要とする。こＯバレル方式ｈａ転棚構
を有する膨大な装置に＆！Ｉ、リードフレームのダミー
混入分別取り出し作業の煩雑、リードフレームの麦形事
故があシ、かつ、電流のダミーえや分流による電源の大
型化になり、及びＷ＃濶効果の非能率などの色々の欠点
がある。If these adhered films remain, they will become an obstacle when performing a complete finishing process on the exposed external leads of the semiconductor device. In order to form a film such as a filler film or a covering film, sandblasting and liquid honing are generally performed using abrasives, but the abrasives can cause scratches on the outer lead of the paper. There is a drawback that it requires JI and maintenance to prevent the scraped metal powder from leaking outside. In addition, if a molded semiconductor device lead frame and a conductive dummy are mixed into the barrel, and this is immersed in a bath containing an alkaline aqueous solution such as caustic soda or soda cyanide and rotated, the semiconductor leads can be attached to the rotating metal shaft of the barrel. The frame and the dummy are connected to each other and are energized. The i11 electrode plate facing outside the barrel is used as the lI pole, and the effect is not uniform due to uneven current conduction due to the rotation of the barrel, which requires intense mold replacement work (afterwards, by puff polishing). This is a huge device with an O-barrel type ha reversing rack structure. I. There are various problems such as dummy lead frame mixing, complicating the separation and removal work, lead frame malformation accidents, larger power supply due to current dummy and shunting, and inefficiency of W# water effect. There are drawbacks.
本発明社かかる欠点を除去するものである。即ち本発明
轄陰極としてのモールド済み半導体装置水ｆＩ＃液に浸
１通電電解してなるモールド被層を膨潤せしめることを
特徴とする装置である０本発明の実施例を挙げ詳細に説
明する・第３図１．１１’・・・を影成する。これを組
立て陽極体とする。これら区１１１にモールド済みリー
ドフレーム８．８′・・・を挿入しその前後にシいて枠
９ＫＩＮ触しない程度に短くシ、かつ飯極板もリードフ
レームのイ則
上下性が露呈するような寸法にするＯかかる組立てｌＩ
極躯体それぞれの区割１１．１１・・・中に図の如くモ
ールド済み半導体リードフレーム８，８を組立て＠躯体
に接触し′＆いように挿入する。り一ドフレーム社金属
受は体１２に乗シ止まるｏｔの場合モールド部が突出し
ているので両＃ボ電気的ＫＧ触すゐこと社起らない。リ
ードフレームは受押
は台１２と鼻え付は体１３とで締め付は体１４゜１５で
リードフレームを挾持しこれをｗｋ極とする。かくする
ことによ抄各陽極板間にモールド半導体装置リードフレ
ームを隘極鈑に対向して平行に設置することができる。The present invention obviates this drawback. That is, a molded semiconductor device as a cathode according to the present invention is an apparatus characterized by immersing it in a water fI# solution and electrolyzing it with electricity to swell the mold coating layer.Examples of the present invention will be described in detail. Figure 3 1.11'... This is assembled to form an anode body. Insert the molded lead frames 8, 8'... into these areas 111 and place them in front and behind so that they are short enough not to touch the frame 9KIN, and the electrode plates are also sized to expose the verticality of the lead frame. It takes a long time to assemble
As shown in the figure, the molded semiconductor lead frames 8, 8 are inserted into the sections 11, 11, . In the case of a metal support made by Riichido Frame, which rests on the body 12, the molded part protrudes, so there is no possibility of both electrical contacts touching the body. The lead frame is held by a base 12 for the support, a body 13 for the nose mount, and a body 14 for tightening at 14 degrees and 15 degrees, and these are used as wk poles. In this way, the molded semiconductor device lead frame can be placed between each anode plate in parallel to the other anode plates, facing each other.
かかる組金破体をアルカリ往水ｆ！＃液１６を入れた浴
槽１７中に浸漬し直流電流を通ずるとアル゛カリ性水溶
液の作用および均る
一電流分布によ参電解のため陰擲となるリードフレーム
８の外部リード面での均一水素発生と相壕Ｏアルカリ性
水溶液の温度は約ａｏ’ｏ位でか（はんすると効果的で
ある。モールド被ｍｌＯ接着程度、強度にばらつきがあ
るので除去の万全を期するためにリードフレームに噴流
水をかけるだけで除去で自る。モールド被５ｏｙａ濶量
産作業において従来リパレル方式と本発明Ｏ装置を使用
した平行方式とを同数（約１００枚）処理し良場金の比
較の一例を挙げてみると、本発明では１転機構もなく、
装置も小型に’＆鰺床面積は約１／４リードフレーム装
着収客、処理後の分別原理作業工数で約１／Ｂ１電解処
理時間は約１／３で本発明は極めて能率的効串的である
特徴がある。Use alkaline water to remove such broken parts! When the lead frame 8 is immersed in a bath 17 filled with #solution 16 and a direct current is passed through it, the outer lead surface of the lead frame 8 becomes uniform due to the action of the alkaline aqueous solution and the uniform current distribution. Hydrogen generation and phase contact O It is effective to keep the temperature of the alkaline aqueous solution at about ao'o (approx. It can be removed by simply applying a jet of water.An example of a comparison between the conventional reparel method and the parallel method using the O device of the present invention for processing the same number of molds (approximately 100 pieces) in mass production of 5 oya molds is given. Looking at it, the present invention does not have a single rotation mechanism,
The equipment is also smaller and the floor area of the mackerel is approximately 1/4.The lead frame installation capacity is approximately 1/4.The number of man-hours for the separation principle after processing is approximately 1/B1.The electrolytic treatment time is approximately 1/3, making the present invention extremely efficient and effective. There is a characteristic that
なお、前記実施例の締め付は体０１４．ｉｓ□一方に又
轄両方に第４−の如く針金又社釘Ｏ如龜針状金属体を林
立して槓見込んだ恰も生花の銅山の如自締め付は体を用
い導通°性を与えてもよいＯかかる装置を併置しベルト
送シして使用すれＶ更に多量リードフレームを流れ方式
で処理する、ことができる。Note that the tightening in the above embodiment is based on body 014. Is □On one side and on both sides, like No. 4, wire or nail-like metal bodies are lined up and the copper mine of fresh flowers is tightened automatically using the body to provide conductivity. If such a device is installed in parallel and used as a belt feeder, it is possible to process a larger quantity of lead frames in a continuous flow manner.
第１図 峰−ルド済小牛導体装置リードフレームの説明
用上面図
第２図 モールド済み半導体装置リードフレームの一部
拡大Ｏ説明用上［１１
第３図 本発明の装置の実施例を示す正面図第４図 本
発明の装置の締め何社体の例の実施例を示す正′ＷＪ図
１・・・・・・・・・・・・モールド済み半導体装置の
モールド部
Ｂ、３・・・・・・半導体装置の篇出外部リード４．４
．！Ｓ、６・・・リードフレームの連結体）・４・・・
・・・・・・・・充てん毫−ルド被膜８．８・・・・・
・モールド済み半導体装置リードフレーム
９・・・・・・・・・・・・陰極取り付叶枠１０・・・
・・・・・・仕Ｊ１極金属板１２．１３・・・リードフ
レーム受は体、押え付′砂体
１４、ｌト・・リードフレーム締め付は体１フ・・・・
・・・・・アルカリ性水溶液浴槽１♂・・・・・・・・
・針状金属体
￥１１ 口
第 ２ 圓Fig. 1 An explanatory top view of a pre-molded conductor device lead frame Fig. 2 A partially enlarged explanatory view of a molded semiconductor device lead frame [11] Fig. 3 A front view showing an embodiment of the device of the present invention Fig. 4 A front view showing an embodiment of the device of the present invention and several companies Fig. 1 Mold parts B, 3 of a molded semiconductor device... ...Semiconductor device external lead 4.4
．． ! S, 6... lead frame connection body), 4...
・・・・・・Filled shell 8.8・・・・・・
- Molded semiconductor device lead frame 9...Cathode mounting leaf frame 10...
・・・・・・Specification J1 electrode metal plate 12.13・・・Lead frame holder is body, with presser body 14, lt・Lead frame tightening is body 1 frame...
・・・・・・Alkaline aqueous solution bath 1♂・・・・・・・・・
・Needle-shaped metal body ￥11 Mouth 2nd round
Claims (1)
膜除＊ｋをいて、陰極としてＯモールド済槽中Ｏアルカ
リ性水溶液に浸涜逓電電解してなるモールド被膜を１ｌ
ｌＩｉせしめることを特許とする装Ｒ０Remove the molded coating on the external lead of the molded conductor device, and add 1 liter of the molded coating obtained by electrolyzing it by immersing it in an alkaline aqueous solution in the O-molded tank as a cathode.
The device R0 is patented to allow
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20913781A JPS58111358A (en) | 1981-12-25 | 1981-12-25 | Swelling device for molded film on external lead of semiconductor device molded previously |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20913781A JPS58111358A (en) | 1981-12-25 | 1981-12-25 | Swelling device for molded film on external lead of semiconductor device molded previously |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58111358A true JPS58111358A (en) | 1983-07-02 |
Family
ID=16567903
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20913781A Pending JPS58111358A (en) | 1981-12-25 | 1981-12-25 | Swelling device for molded film on external lead of semiconductor device molded previously |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58111358A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61119048A (en) * | 1984-11-15 | 1986-06-06 | Kyushu Nogeden:Kk | Automatic removing device of film oozing out of mold |
| JPH0347111U (en) * | 1989-09-14 | 1991-05-01 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5679459A (en) * | 1979-12-04 | 1981-06-30 | Noge Denki Kogyo:Kk | Pretreatment method for plating of external lead wire after semiconductor molding |
-
1981
- 1981-12-25 JP JP20913781A patent/JPS58111358A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5679459A (en) * | 1979-12-04 | 1981-06-30 | Noge Denki Kogyo:Kk | Pretreatment method for plating of external lead wire after semiconductor molding |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61119048A (en) * | 1984-11-15 | 1986-06-06 | Kyushu Nogeden:Kk | Automatic removing device of film oozing out of mold |
| JPH0347111U (en) * | 1989-09-14 | 1991-05-01 |
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