JPS58111335A - Wafer prober for optical element - Google Patents
Wafer prober for optical elementInfo
- Publication number
- JPS58111335A JPS58111335A JP20924581A JP20924581A JPS58111335A JP S58111335 A JPS58111335 A JP S58111335A JP 20924581 A JP20924581 A JP 20924581A JP 20924581 A JP20924581 A JP 20924581A JP S58111335 A JPS58111335 A JP S58111335A
- Authority
- JP
- Japan
- Prior art keywords
- light
- light source
- prober
- alignment
- wafer prober
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
- G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は均−元を必要とする半導体の測定機器に係り、
特にイメージセンナ等の光素子のウエノAプロービ/グ
に好適なりエノ・プローバに関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor measuring device that requires uniformity,
In particular, the present invention relates to an ENO-prober which is suitable for Ueno-A probing of optical elements such as image sensors.
一般に1次元イメージセンサ等の光素子の光特性中量も
重要な項目として入力光に対する出力電圧の均一性があ
る。クエハ状態でこの特性をチェックするためにクエハ
プローバが使用されるが、従来のクエハプローパは、ウ
ニへのアライメントに使用するための光源しか備えてい
ないため、この種の元素子を測定するに適当な均一光が
得られないという欠点がある。Generally, an important item in the optical characteristics of an optical element such as a one-dimensional image sensor is the uniformity of output voltage with respect to input light. The Queja Prober is used to check this property in the Queja state, but the conventional Queja Proper only has a light source for use in alignment to the sea urchin, so it is difficult to find the uniformity suitable for measuring this type of element. The disadvantage is that it cannot receive light.
通常、均一光を得るには、光源を遠くする。光強度を上
げる。アパーチャを狭くする。拡散板を設ける等の処置
を施せばよく、シたがってこの種のプローバにもこのよ
うな処置を施せば前述の欠点は解消できるが、プローバ
の様に限られた9関内では通常の光源をもってしては実
現できない。Usually, to obtain uniform light, the light source is placed far away. Increase light intensity. Narrow the aperture. It is only necessary to take measures such as installing a diffuser plate, and therefore, if such measures are applied to this type of prober, the above-mentioned drawbacks can be overcome, but in a limited 9 area like a prober, it is not possible to use a normal light source. It cannot be achieved by doing so.
本発明の目的は、光源をクエハプローバ部外に設け、こ
の光源光を光7アイパな用いてクエハプローパ部に導き
、かつ可動鏡を用いてこの光の光路とアライメント用の
光の光路とを切換え得るように構成することにより、イ
メージセンサをはじめとする光素子半導体クエ/Sの出
力均一性の測定において、精度よく測定するに必要かつ
充分な均−光を得ることができるクエハプローバを提供
スることにある。An object of the present invention is to provide a light source outside the quenching prober unit, to guide the light from the light source to the quenching probe unit using a light beam, and to switch the optical path of this light and the optical path of alignment light using a movable mirror. To provide a quenching prober with the following configuration, which can obtain sufficient uniform light necessary for accurate measurement in measuring the output uniformity of optical element semiconductor quenching devices such as image sensors. It is in.
以下、本発明の一実施例をg1図2よび第2図にエリ説
明する。第1allKウエハプローバの全体構成を示す
。ワエハプローパsp外に設けた光源1で発生した光は
光11と’7zハプローバ部Pの間に延設した光ファイ
バ2を通り、光フアイバ導入路3を経てウエハプローバ
部P内に入る。光は拡散板5を21!1iIAすること
によって拡散し、より均一な光強度分布をなす。この党
は可動鏡6にて反射され、ステージ9上に導かれる。従
ってプローブカード8直下のウェハ上には目的とする均
一光が照射される。1g2図に前記可動鏡6の構成を示
す。11は鏡体な示し、絞り板13に設けた支点12を
中心に図外のリンク等により揺動させることが可能で6
6゜そして、暑の位置にあれば第1図に符号7で示した
光源内R11のアライメント用顕微鏡にエリアライメン
トがaiaとなり、bの位置にあればアライメント用光
源からの光をさえぎり、元ファイバ2からの均−元をス
テージ9上に導くことができる。この可動鏡6はlOに
示すアダプタに装着可能である。An embodiment of the present invention will be explained below with reference to FIG. 2 and FIG. The overall configuration of the first allK wafer prober is shown. Light generated by a light source 1 provided outside the wafer prober SP passes through an optical fiber 2 extending between the light 11 and the '7z prober section P, and enters the wafer prober section P via an optical fiber introduction path 3. The light is diffused by 21!1iIA of the diffuser plate 5, resulting in a more uniform light intensity distribution. This party is reflected by a movable mirror 6 and guided onto a stage 9. Therefore, the target uniform light is irradiated onto the wafer directly below the probe card 8. The configuration of the movable mirror 6 is shown in Figure 1g2. Reference numeral 11 indicates a mirror body, which can be swung around a fulcrum 12 provided on the diaphragm plate 13 by means of a link (not shown), etc. 6
6° If it is in the hot position, the area alignment will be aia for the alignment microscope in the light source R11 shown by reference numeral 7 in Fig. 1, and if it is in the position b, it will block the light from the alignment light source and 2 can be led onto stage 9. This movable mirror 6 can be attached to an adapter shown at IO.
したがって、このクエハプローバによれば、9!八グロ
一ピング時の光の光源をクエハプローバ部から実質的に
遠ざけることができ均一な光照射を行なうことができる
。Therefore, according to this Queha Prober, 9! The light source of the light during groping can be moved substantially away from the quadrature prober section, and uniform light irradiation can be achieved.
以上のように本発明のクエへプローパによればステージ
を均一に照射できるのはもとより、ステージ上での光強
度の精度を2〜3’lとすることができる。アライメン
ト用光源で4!104根度の精度しか得られないため、
光素子の出力均一性の特性測定においてオーバスペック
となり、これが光素子の歩留向上を阻む大きな要因とな
っていたが、本発明によって光強度の均一な元を用いる
ことにより光素子の特性測定の精度と歩留の向上を実現
できる。As described above, according to the square propper of the present invention, not only can the stage be uniformly irradiated, but also the accuracy of the light intensity on the stage can be set to 2 to 3'l. Since the alignment light source can only achieve an accuracy of 4!104 degrees,
When measuring the output uniformity characteristics of optical devices, over-specification occurred, which was a major factor hindering the improvement of the yield of optical devices.However, with the present invention, by using a source with uniform light intensity, it is possible to measure the characteristics of optical devices. Improved accuracy and yield can be achieved.
第1図は+7エハプローパの全体構成図、#I2図(A
) 、 tB) 、 (C)は可動鏡の正面図、底面図
、1iIrkJ図である。
l・・・元ファイバ光源、2・・・元ファイノく、5・
・・拡散板、6・・・可動鏡、7・・・アライメント用
顕微鏡、9・・・ステージ。
代端人 弁理士 薄 1)利 幸1、−一Figure 1 is an overall configuration diagram of the +7 wafer properr, Figure #I2 (A
), tB), (C) are the front view, bottom view, and 1iIrkJ diagram of the movable mirror. l... Original fiber light source, 2... Original fiber light source, 5.
... Diffusion plate, 6... Movable mirror, 7... Alignment microscope, 9... Stage. Representative Patent Attorney Susuki 1) Toshiyuki 1, -1
Claims (1)
ント用光源を備えたアライメント用顕微鏡にてチェック
するようにした光素子用のつz/Sプローバにおいて、
光源をワエハブロー六部外に設けると共に、この光源光
を光ファイバを用いてクエハプローパ部に導き、かつこ
の光源光と前記アライメント用光源光の各光路を切換え
得るように構成したことを特徴とする光素子用フェノ為
プローバ。 2、光路を切換える手段が可動鏡である特許請求の範囲
第1項記載の光素子用フェノ・プローバ。[Scope of Claims] A Z/S prober for an optical element, in which an optical element set in a haproper section of 1 and 9 is checked using an alignment microscope equipped with an alignment light source,
An optical element characterized in that a light source is provided outside the wafer blower six section, the light source light is guided to the wafer propper section using an optical fiber, and the optical paths of this light source light and the alignment light source light can be switched. Phenome prober. 2. The pheno-prober for optical devices according to claim 1, wherein the means for switching the optical path is a movable mirror.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20924581A JPS58111335A (en) | 1981-12-25 | 1981-12-25 | Wafer prober for optical element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20924581A JPS58111335A (en) | 1981-12-25 | 1981-12-25 | Wafer prober for optical element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS58111335A true JPS58111335A (en) | 1983-07-02 |
Family
ID=16569757
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20924581A Pending JPS58111335A (en) | 1981-12-25 | 1981-12-25 | Wafer prober for optical element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58111335A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS622250U (en) * | 1985-06-20 | 1987-01-08 | ||
JPS63255932A (en) * | 1987-04-14 | 1988-10-24 | Nec Corp | Testing device |
-
1981
- 1981-12-25 JP JP20924581A patent/JPS58111335A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS622250U (en) * | 1985-06-20 | 1987-01-08 | ||
JPS63255932A (en) * | 1987-04-14 | 1988-10-24 | Nec Corp | Testing device |
JPH063822B2 (en) * | 1987-04-14 | 1994-01-12 | 日本電気株式会社 | Test equipment |
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