JPS58110499A - Specular etching method for wafer and wafer holder used for said method - Google Patents
Specular etching method for wafer and wafer holder used for said methodInfo
- Publication number
- JPS58110499A JPS58110499A JP20906681A JP20906681A JPS58110499A JP S58110499 A JPS58110499 A JP S58110499A JP 20906681 A JP20906681 A JP 20906681A JP 20906681 A JP20906681 A JP 20906681A JP S58110499 A JPS58110499 A JP S58110499A
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- Prior art keywords
- wafer
- holders
- wafers
- holder
- case
- Prior art date
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Weting (AREA)
Abstract
Description
【発明の詳細な説明】
(1) 発明の技術分野
本発明は例えばシ冒、トキ−r−)道界効果トランジス
タの製造における、ガリウムーヒ素(GaAs)基MF
(ウェハー)上にエビタヤシャル層tfi相成長させる
際の前工程としての鏡面仕上げ(鏡面エツチング)方法
並びに−七れに用いるカセット式ウェハーホルダに関す
る。DETAILED DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to the use of gallium-arsenide (GaAs)-based MFs in the production of, for example, field effect transistors.
The present invention relates to a mirror finishing (mirror etching) method as a pre-process for growing an epitaxial layer (TFI) on a wafer, and a cassette type wafer holder used in the process.
(2)技術の背景
近年、例えば半導体装置形成用半導体材料基板(ウェハ
ー)トしてシリコン(81)基板に代わ)ガリウムーヒ
素(GaAs )基板が用いられるようになってきた。(2) Background of the Technology In recent years, for example, gallium-arsenide (GaAs) substrates have been used instead of silicon (81) substrates as semiconductor material substrates (wafers) for forming semiconductor devices.
基板表面には傷等の欠陥があってはならないため、ウェ
ハーの結晶成長面に拡前処理として鏡面エツチング処理
が施される。この鏡面工、チングは機械的に鏡面加工し
たウェハーを酸ま九はアルカリ溶液につけて化学エツチ
ングすることにより仕上げられるがその一連の作業とし
て化学エツチングに先がけてウェハー基板を脱脂する工
程、化学エツチング終了後にウェハーを水洗いする工程
、そして最後にこれを乾燥する工程等が必要になる。Since the substrate surface must be free of defects such as scratches, a mirror etching process is performed on the crystal growth surface of the wafer as a pre-expanding process. This mirror finishing and etching are finished by chemically etching the mechanically polished wafer by soaking it in an acid or alkaline solution, but the process includes a process of degreasing the wafer substrate prior to chemical etching, and the end of the chemical etching. Afterwards, a step of washing the wafer with water and finally a step of drying it are required.
(3) 従来技術の問題点
81基板の場合のウェハー処理技術をそのtまGaAa
基板に応用しようとすると次の如自問題点がある。(3) Problem 81 of conventional technology The wafer processing technology for substrates is now
When trying to apply it to a circuit board, the following problems arise.
1、 0aム1は伸開性がある丸めにウェハーからチ、
!を切り出す時は有利であるがウェハーを一ンセ、ト埠
でつかむのは好ましくなく割れの原因となる。1. 0am 1 is a stretchable round from the wafer,
! Although it is advantageous when cutting out a wafer, it is undesirable to grasp the wafer in a single position, which may cause cracking.
2.0aAsはs量に比して中わらかくかつもろい丸め
81基板に比して欠は晶い。その九め化学工、チンダ時
における攪拌作業が困−となる。即ち、81ウエハーの
場合には自動化、量産化が進み、手によるウェハーのハ
ンドリング操作も機械で代用できるが非常にもろいGa
1i1ウエハーの場合にはこのような方法は採用できな
い。2.0aAs is moderately soft compared to the s content and is crystalline compared to the rounded 81 substrate, which is brittle. In the ninth step, stirring work during cinder becomes difficult. In other words, in the case of 81 wafers, automation and mass production have progressed, and manual wafer handling operations can be replaced by machines, but Ga is extremely fragile.
In the case of 1i1 wafers, such a method cannot be adopted.
3、 0aAmは化学反応性に富むため高熱にさらすこ
とができず、従うて水切り乾燥を高温度雰囲気中で行う
ことができない。3. Since 0aAm is highly chemically reactive, it cannot be exposed to high heat, and therefore, it cannot be drained and dried in a high-temperature atmosphere.
4、上記の如き問題点があるために作業には高度の熟練
と非常な慎重さが要求され、多数枚のウェハーを一度に
処理することは非常に困難である。4. Due to the above-mentioned problems, a high degree of skill and extreme caution are required for the work, and it is extremely difficult to process a large number of wafers at once.
(4)発明の目的
本発明の目的は上述の如き問題点を解消すべくカセット
式のウェハーホルダを用いることにより処理中のウェハ
ーの移動はウェハーをfi接ピンセ、ト等で把持するこ
となくすべてこのウェハーホルダごと行いそれにより9
エバーの割れや欠けを防止するようにすると共に多数枚
のウェハーの同時処理を可能ならしめ気相成長の前処理
工程の工数を大幅に低減せしめることにある。(4) Purpose of the Invention The purpose of the present invention is to solve the above-mentioned problems by using a cassette type wafer holder so that the movement of the wafer during processing can be done without having to hold the wafer with filigree tweezers, etc. Perform this with the wafer holder.
The object of the present invention is to prevent cracking or chipping of the wafer, and to enable simultaneous processing of a large number of wafers, thereby greatly reducing the number of man-hours in the pretreatment process for vapor phase growth.
(5) 発明の構成
ウェハーはカセット式のウェハーホルダにょ〕保持され
、基板ウェハーの!!而面ツチング処場の各工程中にお
けるウェハーの移動に際してウェハーを直接把持するこ
となくウェハーホルダごと移動せしめられる。(5) Structure of the invention: The wafer is held in a cassette-type wafer holder, and the substrate wafer is held in a cassette-type wafer holder. ! However, when moving the wafer during each process in the cutting process, the wafer holder can be moved without directly holding the wafer.
そして上記ウェハホルダーはウェハー(略円形)を受答
す4凹溝を有し、該凹溝の底壁部に紘つエバーを実質上
点あるいは線で支持する尖端突起が形成される。The wafer holder has four concave grooves for receiving the wafer (approximately circular in shape), and a pointed protrusion is formed on the bottom wall of the concave groove to support the wafer substantially at a point or in a line.
(6)発明の実施例
本発明に係るウェハーホルダは第1.2図に示す如く中
央部に凹所5を有する板状の本体]から構成される0本
体1は凹所5の底壁部中央に尖状突起13を有し、本体
lはこの突起13を中心として対称形状を有する。突起
13の逆V字形頂端は点でもあるいは線でもよい1本体
lの両端にはグリ、f3が形成され、ホルダ移動に際し
てはグリフf3を手で持つようにする。本体lには多数
の貫通孔7が形成され、工、チンダ液の流通を可能なら
しめる。貫通孔7は凹所5の板面にも形成してもよい。(6) Embodiments of the Invention As shown in FIG. It has a pointed protrusion 13 in the center, and the main body l has a symmetrical shape with this protrusion 13 as the center. The inverted V-shaped apex of the protrusion 13 may be a point or a line.Glyphs f3 are formed at both ends of the main body l, and the glyphs f3 are held by hand when moving the holder. A large number of through-holes 7 are formed in the main body l, allowing the flow of the tinda liquid. The through hole 7 may also be formed in the plate surface of the recess 5.
ウェハー10をホルダごとエツチング液中に沈めたとき
にエツチング液が容品にウェハーlOの裏面側にも入り
込み得るように、かつウェハー10をホルダから堆り外
すときのウェハーioと凹所5の板面との密着力を減少
せしめるために凹所5は図示の如きチー・々溝とするの
が好ましい。When the wafer 10 is submerged in the etching solution together with the holder, the etching solution can enter the container into the back side of the wafer IO, and when the wafer 10 is removed from the holder, the wafer IO and the plate of the recess 5 are arranged. In order to reduce the adhesion force with the surface, it is preferable that the recess 5 is a groove as shown in the drawing.
ウェハー10は例えばそのオリエンテーシロンフラ、)
(OF)IOAを突起13上にのせるようにして凹所5
内に位置せしめられる。従ってウェハー10は実際上は
第1図に示す如き一点支持位置よりもむしろ凹所5の側
壁のいずれかによりかかった2点支持の状擦で保持され
ることになろう。本体1の底部には突起13の部分で凹
所5に通じる排水孔9が形成される。葦た、本体lの底
部には例えば略球状の一対の突起11が設けられる。こ
れら突起11は後述の乾燥治具の対応凹溝内に嵌入せし
められる。For example, the wafer 10 has its orientation
(OF) Place the IOA on the protrusion 13 and place it in the recess 5.
be located within. Thus, the wafer 10 will actually be held in a two-point support position against either side wall of the recess 5, rather than in a single-point support position as shown in FIG. A drainage hole 9 communicating with the recess 5 is formed at the bottom of the main body 1 at the protrusion 13. A pair of substantially spherical protrusions 11, for example, are provided at the bottom of the reed body l. These protrusions 11 are fitted into corresponding grooves of a drying jig, which will be described later.
ウェハーホルダ1は第3図に示す如き多層ケース20内
に収められる。多層ケース20は所定数の多孔シェルフ
21t[し、これら各シエに721上に夫々ウェハーホ
ルダ1が載置せしめられる。ケース20は把手25を有
し、移動時の迩りとして役立つ。ケース20の頂板及び
底板にも多孔が形成される。ケース20の側板にも多孔
を形成してもよい。ケース20は例えばテフロ/により
形成される。ケース200頂底板、側板及びシエル22
1は板の代りに単なるフレームあるいは枠組としてもよ
く、その場合には多孔は不要である。各シェルフ21の
間隔はウェハー10を有するホルダlが入り得る大きさ
でよい、またケース20の形状は図示の如き直方体に限
らず、円筒体あるいは多角柱体でもよい。The wafer holder 1 is housed in a multilayer case 20 as shown in FIG. The multilayer case 20 has a predetermined number of porous shelves 21t, and a wafer holder 1 is placed on each of these shelves 721, respectively. The case 20 has a handle 25, which serves as a handle during movement. Porous holes are also formed in the top plate and bottom plate of the case 20. Porous holes may also be formed in the side plate of the case 20. The case 20 is made of, for example, Teflon. Case 200 top and bottom plate, side plate and shell 22
1 may be a simple frame or framework instead of a plate, in which case no holes are required. The interval between the shelves 21 may be large enough to accommodate the holder l having the wafer 10, and the shape of the case 20 is not limited to the rectangular parallelepiped shown, but may be a cylinder or a polygonal prism.
次に、上述の如きウエノ・−ホルダとケースとを用いて
鏡面工、チングを行う方法について説明する。Next, a method for performing mirror polishing and chiming using the Ueno-holder and case as described above will be explained.
ウェハー、ウェハーホルダ、ケース及びビー力(後述)
は予じめトリフレ/等の有機溶剤により脱脂洗浄される
。ビー力30内にエツチング液(例えばH,804−N
20.−1f20系)を温良す。ウェハー10をウエハ
ーホル〆1の凹所5内に支持し良状態でケース20の各
シェルフ21上に載置する。このと龜ウェハー10は鏡
面側が表に向くようにする。次いでこのケース20を把
手25を手で持ちなからピー力30のエツチング液に漬
ける(w44図)。所定時間エツチング液中で攪拌(ピ
ー力を振る)しえら大量の水をビーカ内に注ぎ工、チ/
グを終了する(第5図)。このときウェハーが空気に触
れないようにエツチング液を一旦あけてから水を注ぐの
ではなく、エツチング液を大量の水で希釈するような方
法で水洗いすることが肝要である。この際大蓋の水を一
寂に注いでもウェハーはケース20に収められているの
で割れる心配は全くない。またエツチング液を大量の水
で希釈する際には第5図に示す如くケースlの背面側に
ウェハーホルダが揃えられるように傾ければウェハーが
ケースから抜は落ちる心配は全くなく破損する危険もな
くなる。Wafer, wafer holder, case and force (described later)
is degreased and cleaned in advance using an organic solvent such as Triflet. Etching liquid (e.g. H, 804-N
20. -1f20 series). The wafer 10 is supported in the recess 5 of the wafer holder 1 and placed on each shelf 21 of the case 20 in good condition. At this time, the mirror wafer 10 is placed so that the mirror surface side faces up. Next, the case 20 is immersed in an etching solution with a peel strength of 30 while holding the handle 25 (Fig. W44). Stir in the etching solution for a specified period of time (shake pressure), then pour a large amount of water into the beaker.
(Figure 5). At this time, it is important to wash the wafer with water by diluting the etching solution with a large amount of water, rather than opening the etching solution and then pouring water to prevent the wafer from coming into contact with the air. At this time, even if you pour water from the large lid all at once, there is no worry that the wafer will break because it is housed in the case 20. Also, when diluting the etching solution with a large amount of water, if you tilt the wafer holder so that it is aligned with the back side of the case L as shown in Figure 5, there is no need to worry about the wafer falling out of the case, and there is no risk of damage. It disappears.
水洗いが完了したらり゛−ス20をビー力30から抜き
出し、各ウェハーをウェハーホルダごとケース20から
一枚づつ抜き出す。このときもウェハーを直接つかむ必
要はなく、ホルダlの把手3をもうてウェハーホルダを
引き出せばよい、ウェハーIOはウェハーホルダlの凹
所5内において突起13により支持されているのでウェ
ハーlOに付着した水は凹所5の酸部に流れおちそこに
九まることになる。このたまった水は排水孔9を介して
ホルダlから外部に排出される。即ち、ウェハー10は
ウェハーホルダlに保持したttの状態で水切りが行わ
れ得る・
最後にウェハーlOを乾燥する。乾燥に際しては第6図
に示す如き乾燥治X40が用いられる。When the water washing is completed, the material 20 is taken out from the beer force 30, and each wafer is taken out one by one from the case 20 together with the wafer holder. At this time as well, there is no need to directly grasp the wafer, just use the handle 3 of the holder l and pull out the wafer holder.The wafer IO is supported by the protrusion 13 in the recess 5 of the wafer holder l, so it sticks to the wafer lO. The water will flow into the acid part of the recess 5 and collect there. This accumulated water is discharged from the holder l to the outside through the drainage hole 9. That is, the wafer 10 can be drained while being held in the wafer holder 1.Finally, the wafer 10 is dried. For drying, a dryer X40 as shown in FIG. 6 is used.
治具40はウェハーホルダ1の突起11に嵌合する略半
球状の凹+1141を有し、これら凹溝41内にウェハ
ーホルダエの突起11を嵌め込めばウェハーホルダはこ
れら突起11を枢支点として第7図に矢印で示す如く枢
動1在となる。治具40はウェハー10の寄りかか9面
43と、滴下し丸木がたれ落ちるようにし九傾斜面4s
とを有する。The jig 40 has approximately hemispherical recesses 1141 that fit into the protrusions 11 of the wafer holder 1, and when the protrusions 11 of the wafer holder 1 are fitted into these grooves 41, the wafer holder uses these protrusions 11 as pivot points. As shown by the arrow in FIG. 7, there is a pivoting motion. The jig 40 has 9 surfaces 43 on which the wafer 10 leans, and 9 inclined surfaces 4s on which the dripping log falls.
and has.
治JiII40の使用に際しては第7図に示す如き広口
のピー力50を用いるのが便利である。When using Jiji II 40, it is convenient to use a wide-mouth pip force 50 as shown in FIG.
dめにウェハーlOの鏡面処理側を乾燥するために87
図に示す如くウエハーホル〆lをビー力50に寄りかか
らせ、ウェハーホルダ1上に保持されるウェハー10の
鏡面側が上に向くようにする。乾燥には例えばエアガン
60による窒素(N2)ガスが用いられる。ウェハーl
Oの鏡面側の乾燥が終了したらホルダ1を突起11を中
心として治[40の寄りかかり面43に向って起こす。87 to dry the mirror-finished side of the wafer lO
As shown in the figure, the wafer holder 1 is placed against the bead force 50 so that the mirror surface side of the wafer 10 held on the wafer holder 1 faces upward. For example, nitrogen (N2) gas from an air gun 60 is used for drying. wafer l
After the mirror surface side of the O is completely dried, the holder 1 is raised around the protrusion 11 toward the leaning surface 43 of the holder 40.
ホルダ1が直立位置を超えて更に回動するとウェハーl
Oはホルダ1の凹所5から外れ旧凰40の遊りかかり面
43上に舒りかかる。このときウェハーlOの下端はホ
ルダ1の突起13上にのっ友ままである。従ってホルダ
1t−1’で示す如く僅かに戻せばウェハー10のに面
が嬉出するので、エアガ/60によりウェハーlOの裏
面側に窒素(N2)ガスを吹きつけ載録させることがで
きる。When holder 1 rotates further beyond the upright position, the wafer l
The O comes off from the recess 5 of the holder 1 and is placed on the resting surface 43 of the old hood 40. At this time, the lower end of the wafer lO remains on the protrusion 13 of the holder 1. Therefore, by slightly returning the holder 1t-1' as shown by holder 1t-1', the back side of the wafer 10 will be exposed, so that nitrogen (N2) gas can be blown onto the back side of the wafer 10 using the air gas/60 for recording.
斯くして一面工、チ/グ工程が完全に終了し、このとき
ウェハーlOは初めてピンセット等によりつまんで後続
のエピタキシャル気相成長工程に送られる0本発明では
ウェハーlOは完全に乾燥した状態でホルダから取シ出
されるので、真空吸着を利用した所jlXg!ピンセ、
トを用いることができる。In this way, the one-sided processing and the chipping process are completely completed, and at this time the wafer IO is pinched with tweezers etc. for the first time and sent to the subsequent epitaxial vapor phase growth process.In the present invention, the wafer IO is completely dried. Since it was taken out from the holder, I used vacuum suction. pince,
can be used.
治具40は第6図に示す如き対称形状としておけば2枚
のウェハーを同時に乾燥処理できる。If the jig 40 has a symmetrical shape as shown in FIG. 6, two wafers can be dried at the same time.
(7) 発明の効果
以上の如く、本発明によれば鏡面エツチング工程を通し
てウェハーは常にウェハーホルダごと移動せしめられる
ので冒頭に述べた如龜問題点はすべて解消される。また
本発明によれば多数のウェハーを同時に処理(・櫂、チ
処理)することができるので作業性は大幅に向上する。(7) Effects of the Invention As described above, according to the present invention, the wafer is always moved along with the wafer holder throughout the mirror etching process, so all of the problems with the image quality mentioned at the beginning are solved. Further, according to the present invention, a large number of wafers can be processed simultaneously (i.e., wafer processing), so that work efficiency is greatly improved.
更にまえ、本発明ではウェハーは完全に乾燥した状態で
真空ピンセット等によpウェハーホルダから取り出すこ
とができるので水切抄乾燥工程で従来一般に用いられる
スピンドツイヤ−の如く濡れたウニ/1−を汚れ九9エ
バー回転台に乗せる工程をなくすことができる。Furthermore, in the present invention, since the wafer can be taken out from the wafer holder in a completely dry state using vacuum tweezers or the like, wet sea urchins/1- can be removed from the wet wafer using a spindle, which is conventionally used in the Mizukiri-sho drying process. It is possible to eliminate the process of placing the product on the 9-Ever rotary table.
s1図は本発明に係るウニノー−ホルダの正面図、第2
図は第1図の側面図、第3図は本発明において川砂られ
るクエハーネル!、:ケースの斜視図、第4図は工、チ
/ダニ程を示す図、第5図は水洗い工程を示す図、第6
図は乾燥油^の斜視図、第7図は乾燥工Sを示す図。
1・・・ホルダ本体、5・・・凹fi、10・・・ウェ
ハー、13・・・突起、20・・・ケース、40・・・
乾燥治具、60・・・エアガ/。
特許出願人
富士通株式会社
%許出願代理人
弁理士 實 木 朗
弁理士 西 舘 和 之
弁理士 内 1)幸 男
弁理士 山 口 昭 之
第4図 第5図
第7図
=611Figure s1 is a front view of the Uni-No-Holder according to the present invention, the second
The figure is a side view of Figure 1, and Figure 3 is a queharnel that is made of river sand in the present invention! , : Perspective view of the case, Figure 4 is a diagram showing the work, tick/tick process, Figure 5 is a diagram showing the washing process, Figure 6 is a diagram showing the washing process.
The figure is a perspective view of the drying oil ^, and Figure 7 is a diagram showing the dryer S. DESCRIPTION OF SYMBOLS 1...Holder body, 5...Concave fi, 10...Wafer, 13...Protrusion, 20...Case, 40...
Drying jig, 60...Airga/. Patent Applicant: Fujitsu Limited Patent Attorney: Akira Minori, Patent Attorney: Kazuyuki Nishidate, Patent Attorney: 1) Yukio, Patent Attorney: Akiyuki Yamaguchi Figure 4 Figure 5 Figure 7 = 611
Claims (1)
、チング終了後にウェハーを工、チンダ液中に浸漬し′
#−1ま水により工、チンダ液を希釈し、次いでウェハ
ーを取p出して水切りを行った後ウェハーの表面を乾燥
処理するウェハーの鏡面エツチング処理において、ウェ
ハーをカセット式のウェハーホルダにより保持し、上記
各工程中におけるウェハーの移!1llKIIしてウェ
ハーを直接把持することなくウェハーホルダごと移動す
るようにしたことを%黴とするウェハーの鏡画工、チン
グ方法。 2、略円形のウェハーを受容する凹所を有し、該凹所の
底壁部にウェハーを実質上点ないしは−で支持する尖端
突起を形成して成るウェハーホルダ。[Scope of Claims] 1. A process in which a degreased and cleaned wafer is immersed in a processing solution, and a wafer is immersed in a processing solution.
#-1 In the mirror etching process of wafers, the wafer is diluted with water, the wafer is removed, the water is drained, and the surface of the wafer is dried.The wafer is held by a cassette-type wafer holder. , wafer transfer during each of the above steps! A wafer mirror painting and chipping method is characterized by moving the entire wafer holder without directly gripping the wafer. 2. A wafer holder having a substantially circular recess for receiving a wafer and having a pointed protrusion formed on the bottom wall of the recess to support the wafer substantially at a point or a point.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20906681A JPS58110499A (en) | 1981-12-25 | 1981-12-25 | Specular etching method for wafer and wafer holder used for said method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20906681A JPS58110499A (en) | 1981-12-25 | 1981-12-25 | Specular etching method for wafer and wafer holder used for said method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS58110499A true JPS58110499A (en) | 1983-07-01 |
Family
ID=16566681
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20906681A Pending JPS58110499A (en) | 1981-12-25 | 1981-12-25 | Specular etching method for wafer and wafer holder used for said method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58110499A (en) |
-
1981
- 1981-12-25 JP JP20906681A patent/JPS58110499A/en active Pending
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