JPS58110041A - Inspection of pattern - Google Patents
Inspection of patternInfo
- Publication number
- JPS58110041A JPS58110041A JP56211741A JP21174181A JPS58110041A JP S58110041 A JPS58110041 A JP S58110041A JP 56211741 A JP56211741 A JP 56211741A JP 21174181 A JP21174181 A JP 21174181A JP S58110041 A JPS58110041 A JP S58110041A
- Authority
- JP
- Japan
- Prior art keywords
- light
- pattern
- substrate
- transmitted
- polarizer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Abstract
Description
【発明の詳細な説明】
(al 発明の技術公野
本発明は透過光を用いて行うホトマスクパターン検査方
法の改良に関する↓
(bl 従来技術と問題点
半導体装置の製造工程に使用されるホトマスクのパター
ンの寸法、或いは異物付着の有無やパターンエツジの形
状異常のような不良モードの検査方法として、ホトマス
ク基板がガラスまたは石英等よりなる透明基板であるこ
とを利用して、透過光を検知する方法が用いられている
。Detailed Description of the Invention] (al Technical Field of the Invention The present invention relates to an improvement in a photomask pattern inspection method using transmitted light ↓ (bl Prior art and problems) As a method for inspecting defective modes such as size, foreign matter adhesion, and abnormal shape of pattern edges, a method is used that detects transmitted light by utilizing the fact that the photomask substrate is a transparent substrate made of glass or quartz. It is being
例えばホトマスク上の隣接せる二つのパターン領域の同
一部分上にそれぞれ受光器を配設し、ホトマスク背面に
設けられた照明光源より投射されホトマスク基板を透過
した光を、上記2個の受光器で受光し、両者の光量を比
較することにより異物付着等を検出する方法、或いはホ
トマスク背面をレーザビームで走査し、透過光濃度を位
置に対応して検知し、その濃度変化を検出することによ
りパターンエツジの位置を検出し、もってパターンの寸
法を測定する方法等が用いられている。For example, a light receiver is placed on the same part of two adjacent pattern areas on a photomask, and the two light receivers receive the light projected from the illumination light source provided on the back of the photomask and transmitted through the photomask substrate. However, there is a method of detecting foreign matter adhesion by comparing the light intensity of the two, or a method of scanning the back side of the photomask with a laser beam, detecting the transmitted light density according to the position, and detecting the pattern edge by detecting the density change. A method is used in which the position of the pattern is detected and the dimensions of the pattern are measured accordingly.
上記従来の検査方法は、透過光量の微妙な変化を検知す
る方法であるためコントラストがつき難く、しかも迷光
の影響等の外乱が加わり、検査精度は必ずしも満足し得
るものではなかった。The conventional inspection method described above is a method of detecting subtle changes in the amount of transmitted light, so it is difficult to obtain contrast, and furthermore, disturbances such as the influence of stray light are added, so the inspection accuracy is not necessarily satisfactory.
10) 発明の目的
本発明の目的は上記問題点を除去して、透過光量の変化
を明確に検知し得るパターン検査方法を提供することに
ある。10) Object of the Invention An object of the present invention is to eliminate the above-mentioned problems and provide a pattern inspection method that can clearly detect changes in the amount of transmitted light.
+dl 発明の構成
本発明の特徴は、透明基板と照明光源との間及び前記透
明基板と光検知手段との間にそれぞれ偏光子を介装し、
付着せる異物或いはパターンエツジ等において、偏光の
乱れを生じた場合にのみ透過光が検知されるようにした
ことにある。+dl Structure of the Invention The feature of the present invention is that polarizers are interposed between the transparent substrate and the illumination light source and between the transparent substrate and the light detection means, respectively,
The purpose is to detect transmitted light only when the polarization is disturbed by attached foreign matter or pattern edges.
le) 発明の実施例 以下本発明の好ましい実施例を図面により説明する。le) Examples of the invention Preferred embodiments of the present invention will be described below with reference to the drawings.
第1図は本発明の一実施例としての不良モードの検査方
法に用いた、検査装置を示す要部断面図である。 同図
において、■は被検査対象試料のホトマスク、2は透明
なホトマスク基板(以下単に基板と略記する)、3a、
3bはパターン、4は基板表面に付着せる異物、5は照
明光源、6゜7は受光器、8は照明光fs5と基板2背
面との間に介装した偏光子で、9は基板2と受光器6.
7との間に介装した偏光子である。上記偏光子8及び9
は一方(例えば偏光子8)をS偏光子、他方(例えば偏
光子9)をP偏光子とする。なお同図の検査装置におい
て、偏光子8及び9を除いた他の構成は、従来装置とな
んら変る所はない。FIG. 1 is a sectional view of a main part of an inspection apparatus used in a failure mode inspection method as an embodiment of the present invention. In the figure, ■ is a photomask of the sample to be inspected, 2 is a transparent photomask substrate (hereinafter simply referred to as the substrate), 3a,
3b is a pattern, 4 is a foreign substance to be attached to the substrate surface, 5 is an illumination light source, 6°7 is a light receiver, 8 is a polarizer interposed between the illumination light fs5 and the back surface of the substrate 2, and 9 is a Photoreceiver6.
This is a polarizer interposed between 7 and 7. Said polarizers 8 and 9
assumes that one side (for example, polarizer 8) is an S polarizer and the other side (for example, polarizer 9) is a P polarizer. In the inspection apparatus shown in the same figure, the other configurations except for the polarizers 8 and 9 are the same as those of the conventional apparatus.
検査装置を上述のように構成し、基板2背面に設けた照
明光源5により偏光子8を介して基板2を照射する。照
射光10は偏光子8を透過することによりS偏光成分の
みとされ、基板2表面のパターンの存在しない部分を通
る成分のみがP偏光子9に入射する。このP偏光子9は
S偏光成分を透過させない。従ってパターン3a、3b
に全く異常が無く、また異物の付着も無ければ、受光器
6及び7に入射する光量は0である。The inspection apparatus is configured as described above, and the substrate 2 is irradiated with the illumination light source 5 provided on the back surface of the substrate 2 through the polarizer 8. The irradiation light 10 is made into only the S-polarized component by passing through the polarizer 8 , and only the component passing through the portion of the surface of the substrate 2 where no pattern exists is incident on the P-polarizer 9 . This P polarizer 9 does not transmit the S polarized light component. Therefore, patterns 3a, 3b
If there is no abnormality at all and no foreign matter is attached, the amount of light incident on the light receivers 6 and 7 is zero.
もしなんらかの異常、例えば同図にみられる如く基板2
表面に微小な埃等の異物4が付着しているような場合に
は、基板2を透過したS偏光成分は、異物4に当って散
乱し偏光が解除される。S偏光成分以外はP偏光子9を
透過するので、上記異物4で偏光を解除された光成分は
P偏光子9を通って受光器6に入射し、検知される。If there is any abnormality, for example, as shown in the same figure, the board 2
When foreign matter 4 such as minute dust is attached to the surface, the S-polarized light component transmitted through the substrate 2 hits the foreign matter 4 and is scattered, and the polarization is canceled. Since light components other than the S-polarized component are transmitted through the P-polarizer 9, the light component depolarized by the foreign object 4 passes through the P-polarizer 9, enters the light receiver 6, and is detected.
また第2図に示すように、パターン3a或いはパターン
3bのパターンエツジに、欠け11. 突起部12等が
存在する場合にも、その部分で偏光が解除され、上述の
異物4が存在する場合と同様に受光器6または7で検知
される。Further, as shown in FIG. 2, there is a chip 11. at the pattern edge of pattern 3a or pattern 3b. Even if there is a protrusion 12 or the like, the polarization is canceled at that part, and the light is detected by the light receiver 6 or 7 in the same way as when the foreign object 4 is present.
このように本実施例では、検査対象部分に異常のない場
合には受光器に対する入射光量はOであり、なんらかの
異常が存在する場合のみ光が検知される。従って良否の
判別は極めて容易であり、しかもパターンエツジの乱れ
、異物の付着等、不良モードが異なると受光器に対する
入射光量が異なるので、適切なスライス・レベルを設定
することにより不良モードを自動的に判別することも可
能である。As described above, in this embodiment, when there is no abnormality in the part to be inspected, the amount of light incident on the light receiver is O, and light is detected only when some abnormality exists. Therefore, it is extremely easy to determine whether the defective mode is good or not. Moreover, since the amount of light incident on the receiver differs depending on the defective mode, such as disordered pattern edges or adhesion of foreign matter, defective modes can be automatically identified by setting an appropriate slice level. It is also possible to determine.
第3図は本発明の変形例としてのパターンの寸法測定方
法に用いた、寸法測定装置を示す要部断面図である。FIG. 3 is a sectional view of essential parts of a dimension measuring device used in a pattern dimension measuring method as a modified example of the present invention.
本変形例においては、照射光源にレーザ21を用い、S
偏光子8を介して微小スポットのレーザビ゛ −ム
22により基板2背面を走査し、P偏光子9を通って受
光器6に入射する光の量を基板2上の位置に対応して検
知する。In this modification, a laser 21 is used as the irradiation light source, and S
The back surface of the substrate 2 is scanned by a minute spot laser beam 22 through a polarizer 8, and the amount of light passing through the P polarizer 9 and entering the light receiver 6 is detected in correspondence with the position on the substrate 2. .
第4図に本変形例においてパターンエツジ部ををレーザ
ビーム22で走査したときの、受光器6に入射する透過
光量を示す。同図(alにおいて、23はパターン、2
4はパターンエツジである。このパターンエツジ24部
を照射したとき照射光は、パターンエツジ24のテーバ
部分で散乱されて偏光を解除され、P偏光子9を透過し
受光器6に入射する。FIG. 4 shows the amount of transmitted light incident on the light receiver 6 when the pattern edge portion is scanned by the laser beam 22 in this modification. In the same figure (al, 23 is a pattern, 2
4 is a pattern edge. When the pattern edge 24 portion is irradiated, the irradiated light is scattered by the Taber portion of the pattern edge 24, depolarized, passes through the P polarizer 9, and enters the light receiver 6.
パターンエツジ24を除く他の部分ではパターンの有無
に拘わらず、受振器6への入射光は0である。In other parts except the pattern edge 24, the amount of light incident on the geophone 6 is 0 regardless of the presence or absence of a pattern.
即ち、パターン23部では照射光はパターン23に遮ら
れ、パターンが存在しない部分では透過光はS偏光成分
のみとされているためP偏光子に遮られ、いずれの場合
も受光器6には到達し得ない。従って本変形例によれば
同図fb)に見られる如く、パターンエツジ24部にお
いてのみ透過光が検出される。That is, in the pattern 23 part, the irradiated light is blocked by the pattern 23, and in the part where no pattern exists, the transmitted light is blocked by the P polarizer because it is only an S polarized component, and in both cases, it reaches the light receiver 6. I can't. Therefore, according to this modification, as shown in FIG. fb), transmitted light is detected only at the pattern edge 24 portion.
従来方法においては同図(C)に示すように、パターン
エツジ24部において透過光強度の変化が検知されるが
、この変化はなだらかであり、しかも迷光による影響を
完全に除去することが出来なかった。そのため検出精度
を高めることが困難であったのと比較すれば、本変形例
の効果が理解されよう。In the conventional method, as shown in the same figure (C), a change in the intensity of transmitted light is detected at the pattern edge 24, but this change is gradual, and the influence of stray light cannot be completely removed. Ta. Comparing this to the case where it was difficult to improve the detection accuracy, the effect of this modification can be understood.
(fl 発明の詳細
な説明した如く本発明により、透過光量の変化を明確に
検知し得るパターンの検査方法が提供される。(fl) DETAILED DESCRIPTION OF THE INVENTION As described above, the present invention provides a pattern inspection method that can clearly detect changes in the amount of transmitted light.
第1図及び第2図は、本発明の一実施例を示す要部断面
図及び要部上面図、第3図及び第4図は本発明の変形例
を示す要部断面図及び曲線図である。
図において、■はホトマスク、2は透明基板、3.3a
、3b、23はパターン、4は異物、5゜21は照明光
源、6.7は光検知手段、8.9は偏光子、10.22
は照射光、11.12はパターンの異常、24はパター
ンエツジを示す
第11グ1
第3閏
第2171
第 41¥1
(C1)1 and 2 are a cross-sectional view and a top view of a main part showing one embodiment of the present invention, and FIGS. 3 and 4 are a cross-sectional view and a curve diagram of a main part showing a modification of the present invention. be. In the figure, ■ is a photomask, 2 is a transparent substrate, 3.3a
, 3b, 23 are patterns, 4 is a foreign object, 5゜21 is an illumination light source, 6.7 is a light detection means, 8.9 is a polarizer, 10.22
11.12 indicates the irradiation light, 11.12 indicates the pattern abnormality, and 24 indicates the pattern edge.
Claims (1)
主面に対向して配設された照明光源から投射され前記透
明基板を透過した透過光を、前記透明基板の一生面に対
向して配設された光検知手段により検知することにより
、前記透明基板の一生面上のパターンを検査するパター
ン検査方法において、前記透明基板と照明光源との間及
び前記透明基板と光検知手段との間にそれぞれ偏光子を
介装したことを特徴とするパターン検査方法。Transmitted light projected from an illumination light source disposed opposite the other main surface of a transparent substrate having a pattern formed on its surface and transmitted through the transparent substrate is directed to face the surface of the transparent substrate. In the pattern inspection method of inspecting the pattern on the entire surface of the transparent substrate by detecting the pattern with the light detection means arranged at the A pattern inspection method characterized in that a polarizer is interposed between each.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56211741A JPS58110041A (en) | 1981-12-23 | 1981-12-23 | Inspection of pattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56211741A JPS58110041A (en) | 1981-12-23 | 1981-12-23 | Inspection of pattern |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS58110041A true JPS58110041A (en) | 1983-06-30 |
Family
ID=16610810
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56211741A Pending JPS58110041A (en) | 1981-12-23 | 1981-12-23 | Inspection of pattern |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58110041A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1903777A2 (en) * | 2006-09-14 | 2008-03-26 | Thomson Licensing | Film scanner and detection apparatus therefor |
JP2022532523A (en) * | 2019-05-03 | 2022-07-15 | プロテック カンパニー リミテッド | Flip Chip Laser Bonding System |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54101390A (en) * | 1978-01-27 | 1979-08-09 | Hitachi Ltd | Foreign matter inspector |
JPS55117902A (en) * | 1979-03-05 | 1980-09-10 | Fujitsu Ltd | Pattern check unit |
-
1981
- 1981-12-23 JP JP56211741A patent/JPS58110041A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54101390A (en) * | 1978-01-27 | 1979-08-09 | Hitachi Ltd | Foreign matter inspector |
JPS55117902A (en) * | 1979-03-05 | 1980-09-10 | Fujitsu Ltd | Pattern check unit |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1903777A2 (en) * | 2006-09-14 | 2008-03-26 | Thomson Licensing | Film scanner and detection apparatus therefor |
EP1903777A3 (en) * | 2006-09-14 | 2010-12-08 | Thomson Licensing | Film scanner and detection apparatus therefor |
JP2022532523A (en) * | 2019-05-03 | 2022-07-15 | プロテック カンパニー リミテッド | Flip Chip Laser Bonding System |
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