JPS58106877A - Solar cell - Google Patents
Solar cellInfo
- Publication number
- JPS58106877A JPS58106877A JP56205182A JP20518281A JPS58106877A JP S58106877 A JPS58106877 A JP S58106877A JP 56205182 A JP56205182 A JP 56205182A JP 20518281 A JP20518281 A JP 20518281A JP S58106877 A JPS58106877 A JP S58106877A
- Authority
- JP
- Japan
- Prior art keywords
- solar cell
- phosphor layer
- energy
- solar
- beams
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000004065 semiconductor Substances 0.000 claims abstract description 18
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 3
- 229910052769 Ytterbium Inorganic materials 0.000 claims abstract description 3
- 210000004027 cell Anatomy 0.000 claims description 30
- 210000005056 cell body Anatomy 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 230000005284 excitation Effects 0.000 abstract description 7
- 150000002910 rare earth metals Chemical class 0.000 abstract description 4
- 229910052775 Thulium Inorganic materials 0.000 abstract description 2
- 229910052691 Erbium Inorganic materials 0.000 abstract 1
- 125000005842 heteroatom Chemical group 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 13
- 230000005855 radiation Effects 0.000 description 5
- 239000006059 cover glass Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- JJWKPURADFRFRB-UHFFFAOYSA-N carbonyl sulfide Chemical compound O=C=S JJWKPURADFRFRB-UHFFFAOYSA-N 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000000796 flavoring agent Substances 0.000 description 1
- 235000019634 flavors Nutrition 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/055—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は半導体太陽電池本体表面に希土類けい光体層を
設け、この希土類けい光体層における太陽光の波長変換
を通じて、上記半導体基体の光起電力効果に太陽光スペ
クトルを整合させた高効率で耐放射線性を有する太陽電
池に関するものである。Detailed Description of the Invention The present invention provides a rare earth phosphor layer on the surface of a semiconductor solar cell body, and through wavelength conversion of sunlight in this rare earth phosphor layer, the photovoltaic effect of the semiconductor substrate is The present invention relates to solar cells with high efficiency and radiation resistance that match the following.
従来の太陽電池は、例えば第１図に示す構成のように、
主に、ＧａＡｓ、ＩｎＰｌｌｐの半導体基体ｌの損傷を
防護する目的で、太陽電池の表面にＳｉ偽、Ａ４０．等
からなるカバーグラス層３が設けられていた。このよう
な構成の従来の太陽電池においては、太陽光ヂの照射に
よる太陽電池基体内の光、起電力効果のみを利用してい
るので、得られる光起電力出力は！電のみであり、エネ
ルギー変換効率には自ずから限界があった。また、カバ
ーグラス層Ｊは太陽光を吸収こそすれ、エネルギー変換
には有効な作用をせず、変換効率を低下させる等の欠点
があった。A conventional solar cell, for example, has the configuration shown in FIG.
Mainly, for the purpose of protecting the GaAs, InPllp semiconductor substrate l from damage, silicon fake, A40. A cover glass layer 3 consisting of, etc. was provided. Conventional solar cells with such a configuration utilize only the light and electromotive force effect within the solar cell base caused by sunlight irradiation, so the resulting photovoltaic output is ! Since it only uses electricity, there is a natural limit to energy conversion efficiency. In addition, the cover glass layer J has the disadvantage that it absorbs sunlight, does not have an effective effect on energy conversion, and reduces the conversion efficiency.
本発明は、これらの欠点を除去するためになされたもの
で、その目的は、太陽光エネルギーを有効に利用し、し
かも耐放射線性を有する高効率太陽電池を提供すること
にある。The present invention has been made to eliminate these drawbacks, and its purpose is to provide a highly efficient solar cell that effectively utilizes solar energy and has radiation resistance.
かかる目的を達成するために、本発明で４ま、ＧａＡａ
、ＩｎＰなどの半導体太陽電池本体表面にＥｒ 。In order to achieve this object, the present invention provides 4 GaAa
, Er on the surface of the semiconductor solar cell body such as InP.
Ｙｂ、Ｔｍなどの希土類元素を含むけい光体層を設け、
希土類けい光体による光の波長変換を利用することによ
り半導体基体の県止帯輻エネルギーよりも低エネルギー
の光からも光起電力を得るようにする。A phosphor layer containing rare earth elements such as Yb and Tm is provided,
By utilizing the wavelength conversion of light by the rare earth phosphor, photovoltaic power can be obtained from light with lower energy than the band-stop energy of the semiconductor substrate.
以下に、図面を参照しながら、実施例を用いて本発明の
詳細な説明するが、かかる実施例は本発明の例示に過ぎ
ず、本発明のｌ１１２Ｉ内で種々の改良や変形があり得
ることは勿論である。The present invention will be described in detail below using examples with reference to the drawings, but these examples are merely illustrative of the present invention, and various improvements and modifications may be made within the scope of the present invention. Of course.
第一図は本発明太陽電池の構成の一例を示す。FIG. 1 shows an example of the configuration of the solar cell of the present invention.
ここで、Ｇｅｍ５．ＩｍＰなどの半導体基体／／にＰ−
ｍ。Here, Gem5. Semiconductor substrate such as ImP//P-
m.
シ曹ツＦキ、 ＭＩＩあるいはヘテＷ接合などの接を倉
むけい光体層ｌ＃を設け、以て太陽電池を構成する。A solar cell is constructed by providing a phosphor layer l# with a junction such as a metal F junction, a MII or a heat junction.
この太陽電池に太陽光／１を照射することにより１太陽
電池本体／Ｊにおいて光起電力■１が直接に生ずること
は勿論である。本発明においては、太陽電池本体／Ｊの
表面に設けられているけい光体層ｌ参内において太陽光
／ｊの照射による多段励起けい光／４が生ずるので、こ
のけい光１４により太陽電池本体／Ｊにおいて間接的光
起電力Ｉ！もｔた生ずることとなる。特に、従来構造で
は、太陽光スペクトルのうち半導体基体／／の禁止帯幅
より高エネルギーのもののみが利用されてぃたのに対し
て、本発明太陽電池においては禁止帯幅よりも低エネル
ギーの光をもけい光体層／ヂにおける多段励起けい光１
４を通じて活用するので、太陽光エネルギーの有効利用
がなされている。Of course, by irradiating this solar cell with sunlight/1, a photovoltaic force 1 is directly generated in 1 solar cell body/J. In the present invention, since multi-stage excitation fluorescence /4 is generated by irradiation with sunlight /j in the phosphor layer l provided on the surface of the solar cell body /J, this fluorescence 14 causes the solar cell body / Indirect photovoltaic force I! This will also occur. In particular, in the conventional structure, only the part of the solar spectrum with higher energy than the forbidden band width of the semiconductor substrate was used, whereas in the solar cell of the present invention, only the part of the solar spectrum with energy lower than the forbidden band width was used. Multi-stage excitation fluorescence in the light-emitting phosphor layer/di 1
4, making effective use of solar energy.
従来の太陽電池においては、直接的光起電力Ｉ。In conventional solar cells, direct photovoltaic power I.
のみしか利用していないのに対して、本発明太陽電池に
おいては、間接的光起電力！、をも利用でき、光起電力
はｒ、＋ Ｉ、となる。したがって、本発明による太陽
電池は、従来の太陽電池に比べて、（Ｉｓ＋ Ｉｄ ／
Ｉｓ倍の高効率化がはかられている。In contrast, in the solar cell of the present invention, only indirect photovoltaic power is used! , can also be used, and the photovoltaic force becomes r,+I. Therefore, the solar cell according to the present invention has (Is+Id/
Efficiency is increased by a factor of Is.
第Ｊｇｌは本発明太陽電池の他の構成例を示す。No. Jgl shows another example of the structure of the solar cell of the present invention.
ここで、Ｇａムｊ、ＩｎＰなどの半導体基体ｇ 、 ２
／’にＰｗ−ｎ。Here, a semiconductor substrate g, such as Ga, InP, etc.
Pw-n in /'.
シ璽ットキ、 Ｍｌｌあるいはへテロ接合などの接金１
１１１ＪＪ 、 ＪＺ’を形成した太陽電池本体＃ 、
２？’を複微個連結する。かかる連結構造において、
連結部の界面に電極Ｓと共にけい光体層〃をも形成し、
更に上部電極Ｉおよび下部電極ｌをそれぞれ上部および
下部の太陽電池１およびｎ′の外表面に形成し、以て太
陽電池を構成する。上部の太陽電池ｎに太陽光ｌを入射
させると、この上部太陽電池においては、太陽光スペク
トルのうち半導体基体１の禁止帯幅より高エネルギーの
光により光起電力Ｉ、が生ずる。一方、上部半導体基体
〃を透過する半導体基体ｌの禁止帯幅より低エネルギー
の光によって、けい光体層Ｂに多段励起けい光ふが生ず
ることとなり、このけい光ムにより下部の太陽電池ｎ′
に間接的光起電力■、が生ずる。本例の構造においても
、太陽光エネルギーの有効利用がはかられ、高効率の太
陽電池が得られる。なお、本例においては、半導体基体
ｙ 、 ２／’は同一素材でも異なる素材でもかまわな
い。また、上部太陽電池ｎの表面にけい光体層を設け、
上部太陽電池ｎにおける変換効率を向上させる構造とす
ることもできる。Welding such as seal, Mll or heterojunction 1
111JJ, solar cell body # forming JZ',
2? Concatenate multiple '. In such a connected structure,
A phosphor layer is also formed along with the electrode S at the interface of the connection part,
Further, an upper electrode I and a lower electrode I are formed on the outer surfaces of the upper and lower solar cells 1 and n', respectively, thereby constructing a solar cell. When sunlight l is incident on the upper solar cell n, a photovoltaic force I is generated in the upper solar cell due to light having higher energy than the forbidden band width of the semiconductor substrate 1 in the sunlight spectrum. On the other hand, light with energy lower than the forbidden band width of the semiconductor substrate l that passes through the upper semiconductor substrate causes a multi-stage excitation phosphorescence to occur in the phosphor layer B, and this phosphorescence causes the lower solar cell n'
An indirect photovoltaic force ■ is generated. In the structure of this example as well, solar energy can be used effectively and a highly efficient solar cell can be obtained. In this example, the semiconductor substrates y and 2/' may be made of the same material or different materials. Further, a phosphor layer is provided on the surface of the upper solar cell n,
It is also possible to adopt a structure that improves the conversion efficiency in the upper solar cell n.
さらに、本発明太陽電池を宇宙用太陽電池として用いる
場合には、太陽電池本体の表面に設けられたけい光体層
が放射線防護に有効であり、従って本発明による太陽電
池は耐放射線性をも兼ね備えている。Furthermore, when the solar cell of the present invention is used as a space solar cell, the phosphor layer provided on the surface of the solar cell body is effective for radiation protection, and therefore the solar cell of the present invention has radiation resistance. It has both.
以上説明したように、本発明太陽電池には、太陽光エネ
ルギーを有効利用でき、変換効率が高く、シかも、宇宙
線に対しては放射義防謹作用を有し、長寿命であるなど
の利点がある。As explained above, the solar cell of the present invention can effectively utilize sunlight energy, has high conversion efficiency, has radiation protection against cosmic rays, has a long life, etc. There are advantages.
第１１ｊは従来の太陽電池の構成例を示す断面図、第一
図は本発明太陽電池の構成の一例を示す断面図、１１１
１３図は本発明太陽電池の他の構成例を示す断ｗＩ図で
ある。
ｌ・・・半導体基体、 −・・・Ｐ−ｙｓ接合、
３・・・カバーグラス層、 ダ・・・太陽光
、／か・・半導体基体、 ｌｊ・・・接合構造、／３・
・・太陽電池本体、／４１・・・けい光体層、ｌｊ・・
・太陽光、／ト・・多段励起けい光、−／−テ・・半導
体基体、−１２ｖ ＪＪ・・・接合構造、刀、コ・・・
太陽電池本体、Ｊ・・・電極、 訂・・・けい
光体層、ム・・・多段励起けい光１．２７・・・太陽光
、 コ・・・上部電極、λり・・・下部電極。
−シ
ー）ト
味11j is a cross-sectional view showing an example of the structure of a conventional solar cell, and FIG. 1 is a cross-sectional view showing an example of the structure of the solar cell of the present invention.
FIG. 13 is a cross-sectional view showing another example of the structure of the solar cell of the present invention. l...semiconductor substrate, -...Pys junction,
3...cover glass layer, da...sunlight, /ka...semiconductor substrate, lj...junction structure, /3...
...Solar cell body, /41...phosphor layer, lj...
-Sunlight, /T...Multi-stage excitation fluorescence, -/-TE...Semiconductor substrate, -12v JJ...Junction structure, sword, co...
Solar cell main body, J...electrode, correction...phosphor layer, mu...multistage excitation fluorescence 1.27...sunlight, C...upper electrode, λri...lower electrode . -Shi)to flavor
Claims (1)
：ｒ、Ｙｂ、Ｔｍなどの希土類元素を含むけい光体層を
設けたことを特徴とする太陽電池。1i on the surface of semiconductor solar cell body such as GaAs, ImF etc.
: A solar cell characterized by being provided with a phosphor layer containing a rare earth element such as r, Yb, or Tm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56205182A JPS58106877A (en) | 1981-12-21 | 1981-12-21 | Solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56205182A JPS58106877A (en) | 1981-12-21 | 1981-12-21 | Solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58106877A true JPS58106877A (en) | 1983-06-25 |
Family
ID=16502768
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56205182A Pending JPS58106877A (en) | 1981-12-21 | 1981-12-21 | Solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58106877A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6084765A (en) * | 1983-09-02 | 1985-05-14 | ティーピー ブイ エナージィ システムズ，インコーポレーテッド | Light emitting unit |
| JPH0494470U (en) * | 1990-12-27 | 1992-08-17 |
-
1981
- 1981-12-21 JP JP56205182A patent/JPS58106877A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6084765A (en) * | 1983-09-02 | 1985-05-14 | ティーピー ブイ エナージィ システムズ，インコーポレーテッド | Light emitting unit |
| JPH0494470U (en) * | 1990-12-27 | 1992-08-17 |
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