JPS58101556A - Direct current supply and interrupting circuit - Google Patents

Direct current supply and interrupting circuit

Info

Publication number
JPS58101556A
JPS58101556A JP56200154A JP20015481A JPS58101556A JP S58101556 A JPS58101556 A JP S58101556A JP 56200154 A JP56200154 A JP 56200154A JP 20015481 A JP20015481 A JP 20015481A JP S58101556 A JPS58101556 A JP S58101556A
Authority
JP
Japan
Prior art keywords
current
circuit
current supply
gate
pnpn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56200154A
Other languages
Japanese (ja)
Other versions
JPH0415656B2 (en
Inventor
Ichiro Ohigata
大日方 一郎
Junjiro Kitano
北野 純二郎
Toshio Hayashi
林 敏夫
Toshiyuki Tawara
俊幸 田原
Isamu Ueki
植木 勇
Kenzo Takada
高田 健三
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Hitachi Ltd
NEC Corp
Nippon Telegraph and Telephone Corp
Oki Electric Industry Co Ltd
Original Assignee
Fujitsu Ltd
Hitachi Ltd
NEC Corp
Nippon Telegraph and Telephone Corp
Oki Electric Industry Co Ltd
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd, Hitachi Ltd, NEC Corp, Nippon Telegraph and Telephone Corp, Oki Electric Industry Co Ltd, Nippon Electric Co Ltd filed Critical Fujitsu Ltd
Priority to JP56200154A priority Critical patent/JPS58101556A/en
Publication of JPS58101556A publication Critical patent/JPS58101556A/en
Publication of JPH0415656B2 publication Critical patent/JPH0415656B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04MTELEPHONIC COMMUNICATION
    • H04M19/00Current supply arrangements for telephone systems
    • H04M19/001Current supply source at the exchanger providing current to substations
    • H04M19/005Feeding arrangements without the use of line transformers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Signal Processing (AREA)
  • Devices For Supply Of Signal Current (AREA)

Abstract

PURPOSE:To attain a DC current supply circuit to a telephone set, suitable to constitute a semiconductor integrated circuit capable of current interruption easily, by short-circuiting between a gate and a cathode of a gate turnoff PNPN switch, when the interruption of current is desired. CONSTITUTION:A telephone set 3 receives current supply from a DC current supply circuit 11 variable for an in ternal resistance via a DC current polarity inverting circuit 12. The circuit 11 consists of a reference resistor R0, and current transmission circuit Aa-Cb, and at the current supply, a current of about 100mA having internal resistor of 440OMEGA is supplied to the telephone set. When the interruption of current is desired, a negative feedback path of a current transfer circuit is interrupted with transistors (TRs)Q1,Q2, the internal resistance of the circuit 11 is made to almost 44kOMEGA. In the circuit 12 consisting of gate turn-off PNPN switches S1-S4, between the gate and cathode of PNN switches S1-S4 are short-circuited with TRQ3-Q6 when the current interruption is desired, to interrupt current by the aid of high internal resistance of the circuit 11.

Description

【発明の詳細な説明】 本発明はIEIt交換fsKおける4話砿等への直流電
流供給回路に係り、脣に半導体集積−路化に好適なt[
tlL供給遮断回路に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a DC current supply circuit to a four-way wire etc. in an IEIt exchange fsK, and is suitable for semiconductor integration.
This relates to the tLL supply cutoff circuit.

貞えば喝話嶺の直流電流供給回路としては、レターコイ
ルが用いられて米たが、時分割交換−において各加入#
対応に直流電流供給回路な設ける構成をとろうとすると
、夷fi容量が大となる問題があった。このため電子化
さらには半導体集積回路化して小形化を図るべく、櫨々
O提案がなされている。i41図はその代表的な構成を
示すもので、1はレターコイルと等価な特性を舊する電
子化直流喝流供給回踊、2は4個0PNPNスイツチS
tmS冨*Sa*攬で構成される直流lICl314j
性反転回路、5は1話債である。
Letter coils were used as DC current supply circuits in the case, but in time-sharing exchange, each input
If an attempt was made to adopt a configuration in which a DC current supply circuit is provided in response, there is a problem in that the fi capacity becomes large. For this reason, a proposal has been made to reduce the size of the device by converting it into an electronic device or into a semiconductor integrated circuit. Figure i41 shows its typical configuration. 1 is an electronic DC current supply circuit with characteristics equivalent to a letter coil, 2 is a 4-piece 0PNPN switch S
DC lICl314j composed of tmS wealth*Sa*攬
Gender reversal circuit, 5 is 1 story bond.

かかる構成における直流電流供1IiII!iII鴎に
おいては、2朧の越流通路を形成しているPNPNスイ
ッチ4.54又は5.、穐七−放するために、電子仕置
m1llC流供給回路1に喝訛關閉−吐を持たせるか、
PNPNNpNスイッチ篤〜S−トターンオフ4#I総
を持たせる必要がるる。ここで、直流#L流とし”(1
00−根皮の大電流を切断する必要がある場合には、半
導体集積−路化したp NpNスイッチでゲートターン
オフJII1作させるのは困―で6る。
Direct current supply in such a configuration 1IiII! In the III Ugu, the PNPN switch 4.54 or 5. , In order to release the electronic device m1llC flow supply circuit 1, should the electronic device be equipped with an accent gate and shut-off,
It is necessary to have a PNPNNpN switch A~S-to turn-off 4#I total. Here, assume DC #L flow" (1
00-If it is necessary to cut off a large current in the root skin, it is difficult to use a semiconductor integrated pNpN switch to turn off the gate.

本発明はこのような状況に鑑みて発明されたもので、半
導体集積回路化して、容易に直流電流の1ilv1を行
ない得る直流供給遮断時路を提供することを目的とする
The present invention was devised in view of the above situation, and an object of the present invention is to provide a DC supply cutoff time circuit which is implemented as a semiconductor integrated circuit and can easily perform 1ilv1 of DC current.

本発明においては、半導体集積回路化されたゲートター
ンオフPNPNスイッチt−NAいるとと−に、遮断所
望時にそのゲートとカソードの間を短絡することでPN
PNスイッチをゲートターンオフさぜ慢る根皮の゛電流
レベルまで直流電流供1IiIIIA路の電流を低下さ
せるようになすととくより、直流供給の遮断−作を行な
うようになしたことを%黴とする。
In the present invention, when there is a gate turn-off PNPN switch t-NA formed into a semiconductor integrated circuit, the PNPN switch is short-circuited between its gate and cathode when cut-off is desired.
Rather than using a PN switch to reduce the current in the DC supply path 1IiIIIA to the current level of the root bark that is undergoing gate turn-off, it is possible to cut off the DC supply. do.

以下本発明を1!81rIjJに示した一実施真回路に
より#1kmK説明する。第2図は本発明の縞10実施
例を示し、図において、11は内部抵抗を可変となした
直流llE流供鹸−路、鳥は基準抵抗、AM。
The present invention will be explained below using an actual circuit shown in #1kmK as shown in 1!81rIjJ. FIG. 2 shows a striped 10 embodiment of the present invention. In the figure, 11 is a DC 11E flow supply path with variable internal resistance, and 3 is a reference resistance, AM.

AIe I Ja @ 84 @ ’g s ’4は直
#LIIIE流供給1路11のff1i[抗t−基準抵
抗Roo ’/、化する負帰還1路を構成する罐流伝4
11111114%Q−Q*は負埼慮−路を遮断するト
ランジスタである。12はtL流電tlL極性反4Ii
−路、S、〜S4はPNPNスイッチ、Q。
AIe I Ja @ 84 @ 'g s ' 4 is direct #LIIIE flow supply 1 path 11 ff1i [anti-t-reference resistance Roo '/, can flow transmission 4 constituting negative feedback 1 path
11111114%Q-Q* is a transistor that cuts off the negative voltage path. 12 is tL current tlL polarity opposite 4Ii
- path, S, ~S4 is a PNPN switch, Q.

〜Q・はゲートターンオフ眉Oトランジスタである。1
sは電圧Van (481’ )な持つ蝋源である。
~Q is a gate turn-off eyebrow O transistor. 1
s is the wax source with voltage Van (481').

直#を電流供輪回路11の内部抵抗16町は、電流伝過
tm路’ (’a s ”b ) s B (Bg *
 84 ) * (’(Cα、C轟)O″llIc流伝
4率をそれぞれa、l/。
The internal resistance 16 of the current supply circuit 11 is the current transmission tm path'('a s "b) s B (Bg *
84) * ('(Cα, C Todoroki) O″llIc flow rate 4 rates a, l/ respectively.

rとすると、 R0 Rパ・÷4.β;7  °−1t) で表わされる。トランジスタQ* * Qmk ON 
サセて電に伝適回路A、B、Cにより構成される負帰還
回路を遮断すると、Fki部抵抗抵抗1hlは、Rg 
B、 = 2R,叫・・(2) となる、すなわち内部抵抗はα・βり倍される。
If it is r, then R0 Rpa・÷4. β; 7°-1t). Transistor Q * * Qmk ON
When the negative feedback circuit constituted by the transmission circuits A, B, and C is interrupted, the resistance resistance 1hl of the Fki section becomes Rg
B, = 2R, (2), that is, the internal resistance is multiplied by α and β.

通常、Iii*ox 440Ωに選ばれ、醒源4は一4
8Fが使用されるため、10mA4度の電流までpNp
Nスイッチ51〜S4を流れることになる。この電流を
半導体集積1路化したpNpNスイッチで切4するのは
容易ではない。
Usually, Iiii*ox 440Ω is selected, and the source 4 is 14
Since 8F is used, pNp up to a current of 10mA 4 degrees
It will flow through the N switches 51 to S4. It is not easy to turn off this current with a single-path semiconductor integrated pNpN switch.

しかし本発明によれば、基準抵抗鳥を故10ねKjlび
、直流供給遮断時にトランジスタQt−(bにより上記
負11kR路を遮断すれば、PNPNスイッチ51〜S
4を流れる電流は、上記(2)式のように内部抵抗が増
大されることからl mJ 根fi K低くすることが
できる。従ってこのi度の電流になれば、半導体集積1
路化したPNPNスイッチS。
However, according to the present invention, if the reference resistor is set to 10 kjl and the negative 11 kR path is cut off by the transistor Qt-(b) when the DC supply is cut off, the PNPN switches 51 to S
Since the internal resistance is increased as shown in equation (2) above, the current flowing through 4 can be lowered by l mJ root fi K. Therefore, if the current is i degrees, the semiconductor integrated circuit 1
PNPN switch S.

〜S、でもゲートとカソードの間をそれぞれトランジス
タQ、〜Q、で短絡することにより、容易く切断するこ
とが可能になる。
~S, but it can be easily disconnected by short-circuiting the gate and cathode with transistors Q and ~Q, respectively.

箒5図は一本発−の第2の夫厖例を示す等価回路で、第
2図で示した直流11E流供給回路11の基準抵抗R8
を、中点′域値Ly@に*続した場曾の構成例を示すも
のである。′s5図において、ろは定aha、A、B、
Cはll#I2図と同様の電流伝1Ii−路で、直流越
流供給回路21の内部抵抗を14に抵抗R・の−化する
負婦jld路を構成する。
Figure 5 is an equivalent circuit showing a second example of a single-source circuit, and the reference resistance R8 of the DC 11E current supply circuit 11 shown in Figure 2 is
This shows an example of the configuration of a field in which * is followed by the midpoint 'threshold value Ly@. ' In the s5 diagram, Roha constant aha, A, B,
C is a current transmission path 1Ii- path similar to that shown in FIG.

襲 この−路構成においては、定IiE流−II(Q遮断と
トランジスタ9丁をONすることで負帰還路を遮断し、
直dL4流供給−路21の内部抵抗Rs s、’を Ri町+2R0−・・・・・t2f とすることで4i抵抗化し、pNpNスイッチ51〜S
4をダートターンオアー作さ忙てdIi訛喝處の遮断を
容易に行うことができる。
In this -path configuration, constant IiE flow-II (by cutting off Q and turning on 9 transistors, the negative feedback path is cut off,
By setting the internal resistance Rs s,' of the direct dL4 flow supply line 21 to Ri +2R0-...t2f, it becomes a 4i resistance, and the pNpN switches 51 to S
4 is a dirt turn or made busy dIi accent blocking can be done easily.

上記した実施力はいずれも千両形回路の構成例を示した
が、本発明は不平lII形回路に1適用できるものであ
る。また5XaS中の域流伝通回路A、B、Cは嵐く知
られた112−一4でもよいし、演扉壇幅器な用いて構
成し【もよい。
Although the embodiments described above have all shown examples of configurations of Senryo type circuits, the present invention can also be applied to Fumio type II circuits. Further, the wide current communication circuits A, B, and C in the 5XaS may be the well-known 112-14, or may be constructed using a podium width switch.

さらにまたPNPNスイッチS、〜S4のゲートターン
オアー作は、ゲートカノード閾の短絡だけでなく、ゲー
トからより低電位へ回けてグー)喝!4!t−道流さぜ
ることによって行う回路構成をとりてもよいことは勿−
である。
Furthermore, the gate turn-or operation of the PNPN switches S and ~S4 not only short-circuits the gate cathode threshold, but also turns the gate to a lower potential. 4! Of course, it is also possible to use a circuit configuration that uses t-channel flow.
It is.

以上−しく−一したように1本発明は、4常時において
はllIc流’Itg供給回路11 、21内の基準抵
抗R0を低抵抗化(1h)せしめてPNPNスイy?に
大域lItを供給し、直流供鹸遮断時には。
As described above, the present invention provides a PNPN switch by lowering the resistance (1h) of the reference resistor R0 in the IlIc style Itg supply circuits 11 and 21 at all times. When the DC supply is cut off, the global lIt is supplied to the

上紀供給−411,21内の抵抗源を高抵抗化すること
によりてpNp NスイシチS、〜S4への流通It流
を小4流化し、この時pNp Nスイッチをゲートター
ンオフせしめるものであるから、直流′IIEfI1.
ノIPIriI4がきわめて容易にでき、この櫨−路の
半導体集機回路化にきわめて好都合−なものである。
By increasing the resistance of the resistance sources in the Joki Supply-411 and 21, the flow It flows to the pNpN switches S and ~S4 is reduced to four small flows, and at this time the pNpN switch is gate turned off. , DC'IIEfI1.
The IPIriI4 can be made very easily and is very convenient for making this Hashiji semiconductor integrated circuit.

【図面の簡単な説明】[Brief explanation of the drawing]

##11図は従来の直流電流供#l路の回路図。 #I2図及び45図は本発明による直流供給遮断回路の
一実施例【含む直流4Cfi供給回路の2つの実施例を
示すig回路図である。 11.21・・・直流1流供給回路 12・・・直流電流極性反転回路 Ro・・・基準抵抗 A 、B 、C・・・−流伝通回路 Q=−Q*−Qマ・・・トランジスタ 占〜S4・・pNpN’スイッチ Qa〜Qs・・・ゲートターンオフ用トランジスタム・
・・定電流源 オ  l  図 第3[i8 1 第1頁の続き ■出 願 人 日本電信電話公社 ■出 願 人 沖電気工業株式会社 東京都港区虎ノ門1丁目7番12 号 ■出 願 人 日本電気株式会社 東京都港区芝五丁目33番1号 ■出 願 人 富士通株式会社 川崎市中原区上小田中1015番地
##11 is a circuit diagram of a conventional DC current supply line #1. #I2 and 45 are ig circuit diagrams showing two embodiments of the DC 4Cfi supply circuit including one embodiment of the DC supply cutoff circuit according to the present invention. 11.21...DC single current supply circuit 12...DC current polarity inversion circuit Ro...Reference resistors A, B, C...-current communication circuit Q=-Q*-Qma...transistor Diary~S4... pNpN' switch Qa~Qs... Gate turn-off transistor...
...Constant current source l Figure 3 [i8 1 Continued from page 1 ■ Applicant Nippon Telegraph and Telephone Public Corporation ■ Applicant Oki Electric Industry Co., Ltd. 1-7-12 Toranomon, Minato-ku, Tokyo ■ Applicant NEC Corporation 5-33-1 Shiba, Minato-ku, Tokyo ■Applicant Fujitsu Corporation 1015 Kamiodanaka, Nakahara-ku, Kawasaki City

Claims (1)

【特許請求の範囲】 t ゲートターンオフ機能を備えたPNPNスイッチと
、1m PNPNスイッチに直列に接続されそのPNP
Nスイッチに大小2種の電流を切換えて供給する直流電
流供給回路とで構成され、上記PNPNスイッチの直流
供給遮断時に上記直流電流供給回路に19上記PNPN
スイツチに小電流を供給して該PNPNスイッチをゲー
トターンオフせしめるように構成したことを特徴とする
直流供給遮断回路。 2、 上記直流電流供給回路は、抵抗と、該抵抗の抵抗
値を低減化する負帰還回路と、該負帰還回路の動作を制
御するトランジスタで構成され、上記トランジスタのオ
ン、オフにより上記直流電流供給回路内の抵抗値を大、
小2種となすことにより上記PNPNスイッチへの供給
電流を可変するようになしたことを特徴とする特許請求
の範囲第1項記載の直流供給遮断−路。
[Claims] t A PNPN switch with a gate turn-off function, and a 1m PNPN switch connected in series with the PNPN switch.
It is composed of a DC current supply circuit that switches and supplies two types of current, large and small, to the N switch, and when the DC supply of the PNPN switch is cut off, the DC current supply circuit
A direct current supply cutoff circuit characterized in that the circuit is configured to turn off the gate of the PNPN switch by supplying a small current to the switch. 2. The DC current supply circuit is composed of a resistor, a negative feedback circuit that reduces the resistance value of the resistor, and a transistor that controls the operation of the negative feedback circuit, and the DC current is controlled by turning on and off the transistor. Increase the resistance value in the supply circuit,
2. The direct current supply cutoff path according to claim 1, wherein the current supplied to the PNPN switch is made variable by forming two small types.
JP56200154A 1981-12-14 1981-12-14 Direct current supply and interrupting circuit Granted JPS58101556A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56200154A JPS58101556A (en) 1981-12-14 1981-12-14 Direct current supply and interrupting circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56200154A JPS58101556A (en) 1981-12-14 1981-12-14 Direct current supply and interrupting circuit

Publications (2)

Publication Number Publication Date
JPS58101556A true JPS58101556A (en) 1983-06-16
JPH0415656B2 JPH0415656B2 (en) 1992-03-18

Family

ID=16419681

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56200154A Granted JPS58101556A (en) 1981-12-14 1981-12-14 Direct current supply and interrupting circuit

Country Status (1)

Country Link
JP (1) JPS58101556A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS603258A (en) * 1983-06-21 1985-01-09 Oki Electric Ind Co Ltd Polarity inverting system

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4424825Y1 (en) * 1966-02-16 1969-10-20
JPS51114856A (en) * 1975-04-01 1976-10-08 Mitsubishi Electric Corp Semiconductor switch
JPS545649A (en) * 1977-06-15 1979-01-17 Mitsubishi Electric Corp Gate turn-off thyristor
JPS5596755A (en) * 1979-01-17 1980-07-23 Nec Corp Terminal starting system

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4424825Y1 (en) * 1966-02-16 1969-10-20
JPS51114856A (en) * 1975-04-01 1976-10-08 Mitsubishi Electric Corp Semiconductor switch
JPS545649A (en) * 1977-06-15 1979-01-17 Mitsubishi Electric Corp Gate turn-off thyristor
JPS5596755A (en) * 1979-01-17 1980-07-23 Nec Corp Terminal starting system

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS603258A (en) * 1983-06-21 1985-01-09 Oki Electric Ind Co Ltd Polarity inverting system
JPH0320959B2 (en) * 1983-06-21 1991-03-20 Oki Denki Kogyo Kk

Also Published As

Publication number Publication date
JPH0415656B2 (en) 1992-03-18

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