JPS58101426A - X-ray exposing device - Google Patents

Abstract

PURPOSE:To improve the transfer precision remarkably by a method wherein X- ray flux is contracted in one direction of pattern and the other direction perpendicular to the former making use of two monocrometers cut unsymmetrically on the same conditions of surface to reflecting grid face. CONSTITUTION:The X-ray flux permeating the absorbing pattern 31 formed on one face of X-ray mask 21 is contracted in one direction within quadric surface to a reflected X-ray flux 42 by the first monocrometer 51 while said X-ray flux in the other direction within quadric surface is also contracted to another reflected X-ray flux 71 by the second monocrometer 52 provided to make the optical axis reflect while further turning 90 degrees to be transferred to a photoresist 91. At this time, if the monocrometers 51, 52 are provided with the same shape, the dimensions in the directions in which pattern is perpendicularly intersected are contracted in the same ratio. Through these procedures, the transfer precision may be improved remarkably since the size of absorbing pattern on the X-ray mask may be multiplied by several or several scores times.

Description

[Detailed description of the invention] The present WA relates to an X-exposure device.

Conventionally, in an xlI exposure device that uses a so-called soft x1m as a transfer light source, an xII focal source (hereinafter referred to as , a pattern transfer X*ff and X-ray (hereinafter referred to as an X-ray mask) arranged so as to be perpendicular to the X-ray flux, and an armpit X-band mask arranged in parallel with the It has a basic arrangement relationship consisting of a round wire beam resist m, pre-fabricated glue = bar (hereinafter referred to as the edge wafer), and a pattern on the X @ master (hereinafter referred to as the collector pattern) on the 1-wrinkle wafer. This is done by transferring to the resist of
) In the conventional 0x11 exposure device, since the collecting body pattern on the X mask is transferred to the iris bar, the collecting body pattern on the scissors x11w star (generally, the pattern is xllIvtlk (consisting of a metal that fits) It is necessary to form the pattern with dimensions that support the transfer. Due to the above-mentioned necessity, for example, it has a dimension of 1 #m or less. In order to transfer a so-called ultra-fine pattern. K is required to be formed with an ultra-fine dimension including the collecting body pattern, but it cannot be said that the technique for forming the collecting body 1 having such an ultra-fine pattern tube is sufficient.・Motoya Akira O @ target is X1m, which can transfer so-called ultra-fine patterns even if the above-mentioned difficult columnar tube is removed and the absorber pattern formation technique II (abbreviation ~ 1 voice 111) tube is used.
We provide exposure equipment.

According to the present invention, the size of the absorber pattern formed on the XJI mask can be several times to several tens of times the size of the desired transfer pattern, so it is possible to achieve a wing-like shape in order to enhance the absorber pattern. As a result, the formation technique is sufficient and the parallelism of the xII bundle used for transfer is extremely favorable.
The below 〇 rate 1al14, which makes it possible to increase the transfer n degree to IIjll#, will be explained using page 111 showing an example.

Iris 1-kaku and Iris 2-meter mine A progressive diagram showing the original history of the present invention and a partial enlargement of the same. When it is shot,
The transmitted xm flux 4 containing the contrast corresponding to the absorber pattern 3 formed on one stroke of the wrinkle xII mask 2 is reflected by the monochromator 5. On the other hand, the reflective surface 6 is processed with structure #C inclined by -, and
The angle between the transmitted X-ray flux 4 and the monochromator 50 table is reflected! The m bundles 7 and the wrinkles are arranged so that they are larger than the wires.

If the transmitted Xm bundle 4 is Bragg-reflected by the monochromator 50 reflection image 6 and the reflected X# bundle 7 is produced, the Bragg angle tube is the transmitted XII bundle 4 and the monochromator 50.
The angle between the surface and the angle #i #+g% reflection It is important to do so.

For example, if you select the material of the monochromator and the wavelength of
As shown in 211, the contrast of the absorber pattern 3 whose prefecture is W is converted to contrast in the reflected X-ray flux 7, and the contrast of the absorber pattern 3 whose prefecture is W is converted to the contrast of the absorber pattern 3, which is spread over the wafer 8 as a pattern of @W'-W15 for Km 7#. The photoresist 9 is transferred to the photoresist 9. Therefore, the size K in which the transferred pattern has the desired size W'
lk, the one-collection pattern 011-ize under the above transfer conditions is w-sw' and has a good %A. For example, if you want to transfer a pattern of KW'H1s wr on d, y odd resist, #C is s 14' -S jm If you form an O absorber pattern, you can do it using the current collector pattern shadow technique lI. It is extremely easy to process the body.

Said O No. 1 II and 1M21! JK In the example shown,
Although we have shown that parallel dimensions can be transferred onto paper in one step,
Regarding the direction on the paper surface Kmr11, the dimension O is not closed. In Figure 11113, the dimension in this direction is also reduced, that is, ・X
This figure shows the basic structure of an X-ray exposure device that transfers 11 two-dimensional patterns on a photoresist onto a photoresist. The transmitted X-flux formed on one stroke of the X-banded mask n and transmitted through the nine-a collecting pattern 31 is reduced by the first monocoumeter 51 in only one direction within the two-dimensional plane, and is converted into a reflected Xall signal. &ri, so0'It@ is set so as to be reflected on #ceo0u, tmt, etc., and is reflected by the second monochromator 52 in one direction other than in the two-dimensional image x1s After forming a bundle 71, apply it on top of Quehe-81 and apply 97# Tresist 91.
transferred onto the .

If the iris monochromator 51 and the second iris monochromator have the same shape, the dimensions in two orthogonal directions of the two-dimensional collection pattern will be reduced at the same rate. For example, if the first and second monochromators are configured and installed under the conditions described above, ~54 m x %
The p m O absorber pattern is 1 voice ugly X1j+ theory and &) on the photoresist, and lsm , xlI exposure The task for exposure becomes extremely easy.

In this way, the X-ray exposure apparatus of the present invention uses two monochromators whose surfaces are quadratured asymmetrically with respect to the reflection grating 'rIiK under the same conditions. However, as a result of condensation in other directions perpendicular to the above-mentioned direction using the KIIg2 monochromator, the two-dimensional pattern of the absorber can be completely visualized, providing an advantage. In addition, xIs
The 20th advantage is that the processing accuracy of the cast body pattern on the i-sk is also significantly reduced. That is, for example ±0.25
m0 processing 11II degree Morie average 5 voices m E) A /
-N is 811 diagram and Ig! 4! ll0II! - In a good book, it is transferred with a pattern of 1 μm ± 004 swat). Currently, with OXlIIjI optical technology, ±0.
It is almost impossible to form a workpiece pattern with 04βrnO processing accuracy.In addition, as a third advantage, the 0 reflection from the monochromator where the photoresist #clK is emitted is , since the intrinsic sum-parallelism is high, there are few blurs in the transferred pattern. This is not necessarily a condition #i Of course, if one direction of the two-dimensional TA container body pattern satisfies the relationship between JI cured, then the Bragg reflection angle -1 and the grid pattern ohm A nod from O is fine at any angle.

[Brief explanation of the drawing]

Figure 2, Figure 2, and Figure 3 are diagrams for explaining the present invention.
1 is X! I mask, 3 and 31 #iml *Body pattern, 4 and /ll/ are transmitted X-flux, 5.51 and H52 hamonochromator, 6tj reflection grating box, 7 and 71 are reflected X*flux, 8 and 81Fi Wafer, 9 and 91tlj photoresist. O 1 Prisoner 2nd eye-g O 3 Ibiki

Claims (1)

[Claims] The surface can be cut asymmetrically with respect to the reflection grating m, and one direction of the two-dimensional pattern is reduced by S -kWk, Pl by a rattan monochromator (by a rattan monochromator cut asymmetrically). , an xiiiu+i optical scissor arrangement O characterized in that two monochromators are installed between the X-ray mask and the transfer resist so that the direction perpendicular to the above direction is reduced.