JPS58101419A - Atomic layer epitaxial device - Google Patents

Atomic layer epitaxial device

Info

Publication number
JPS58101419A
JPS58101419A JP19979881A JP19979881A JPS58101419A JP S58101419 A JPS58101419 A JP S58101419A JP 19979881 A JP19979881 A JP 19979881A JP 19979881 A JP19979881 A JP 19979881A JP S58101419 A JPS58101419 A JP S58101419A
Authority
JP
Japan
Prior art keywords
ions
atomic layer
substrate
layer epitaxial
valence
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19979881A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
誠一 岩松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP19979881A priority Critical patent/JPS58101419A/en
Publication of JPS58101419A publication Critical patent/JPS58101419A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE:To enable to form two or more kinds of atoms on one atomic layer by a method wherein a part whereon ions may soft-landing is provided on the surface of substrate by means of accelerating ions from ion sources at low voltage not exceeding the specified voltage. CONSTITUTION:The ion species 12 with 1 valence of electric charge are arranged on a substrate 11 at the same intervals without driven into said substrate 11 since they are accelerated by low voltage accelerating electrode 5 at the voltage not exceeding 500V. When the ions with 2 valences only are soft-landed on the surface of substrate with the mass analysing unit fixed to the shifting unit of ions, the ion species 22 are arranged on the substrate 21 at the intervals two times of the intervals of the ions with 1 valence. Now an atomic layer whereon Si ions and P ions are alternately arranged at the same intervals may be formed by means of forming Si<+> ions 32 with 2 valences on the substrate 31 and making P<+> ions 33 with 1 valence soft-landing on the substrate 31 after converting Si ions into Si<+> ions with 1 valence by radiating electronic ray. In these process it is possible to form one atomic layer containing two or more kind of atom.

Description

【発明の詳細な説明】 本発明は原子層エピタキシャル装置Ｋ関する。[Detailed description of the invention] The present invention relates to an atomic layer epitaxial device K.

最近、基板表面へのガス分子の吸着現象を利用して１原
子層づつ原子層を積み重ねる原子層エビ！＋シ’ｒル法
が、丁、Ｂｍｓｔｏｌ　　ａｔ、ａｊ。Recently, Atomic Layer Shrimp, which uses the adsorption phenomenon of gas molecules on the substrate surface to stack up atomic layers one atomic layer at a time! + Shi'r method is Ding, Bmstol at, aj.

１ムｔｏｘｉｃ　　Ｌａｙｅｒ　　ｌｊｊａｇｙ、、、
”、１９８０　　日ＩＤ　　Ｘ爲ｔａ舊ａｔイｏｎａｌ
Ｂｙｍｐｏａｉ＊ｍ、Ｄｉｇｍｍｔ　　ｏｆ　　Ｔｇａ
Ａｓイｃａｌ　　Ｐａｐｇｒａ、ｐ、ｐ、１０Ｂ−１０
９、ムｐｒ、１９８０−等に示されえ。1m toxic layer ljjagy...
”, 1980 Day ID
Bympoai*m, Digmmt of Tga
Ascal Papgra, p, p, 10B-10
9, Mupr, 1980- etc.

しかし、上記原子層エピタキシャル法では２種類以上の
原子を一原子層内に均一に分布した状態で形成する事は
不可能である。However, in the above-mentioned atomic layer epitaxial method, it is impossible to form two or more types of atoms uniformly distributed in one atomic layer.

そこで、本発明は上記従来技術の欠点のない、２種類以
上の原子をも一原子層内に形成できる新しい原子層エピ
タキシャル装置を提供することを目的とする。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a new atomic layer epitaxial device that does not have the drawbacks of the prior art described above and can form two or more types of atoms in one atomic layer.

上記目的を達成する丸めの本発明の基本的構成は、原子
層エピタキシャル装置において、少すくと本イオン源と
、該イオン源から５００ボルト以下の低電圧で加速し、
基板表面に前記イオンを軟着陸させる部位を具備するこ
とを特徴とする。The basic structure of the present invention that achieves the above object is that, in an atomic layer epitaxial device, the present ion source and the ion source are accelerated at a low voltage of 500 volts or less,
The method is characterized in that it includes a portion on the surface of the substrate that causes the ions to land softly.

以下、実施例に沿うて本発明を具体的に詳述する。Hereinafter, the present invention will be specifically described in detail with reference to Examples.

第１図は本発明による原子層エピタキシャル装置の基本
構成を模式的に示し友ものである。ｌはイオン源であり
、２はイオン化すべ龜種を供給す為導入口、３は高周波
電源に連らなり九発振極橡であ〕、イオン種をガス、プ
ラズマ６によ）発生させる為に用いる。４社プラズマ電
位を定める電極であり、５の低電圧加速電極との関に１
メルトから５００ボルト以下の電位をよせ、プラズマ６
から低電圧でイオンを引出す丸めに用いる。７は試料基
板である。これらの処理は真空内で行なわれる。FIG. 1 schematically shows the basic structure of an atomic layer epitaxial device according to the present invention. 1 is an ion source; 2 is an inlet for supplying the species to be ionized; 3 is a nine-oscillation pole connected to a high-frequency power source; use It is an electrode that determines the plasma potential of 4 companies, and 1 is connected to the low voltage accelerating electrode of 5.
A potential of less than 500 volts is applied to the melt, and plasma 6
Used for rounding to extract ions from a low voltage. 7 is a sample substrate. These treatments are performed in vacuum.

上記第１図の基本構成の原子層エピタキシャル装置を応
用することＫよシ、第２図に示すとと１原子層エビタ中
シャル処履が可能となる。第２図μｍは１種のイオンな
基穢表面１１に原子層エピタキシャルを施し九場合のエ
ピタキシャル原子層ｏ装置を模式的に示しえもので、１
価の正電荷をもつ九イオン種１２は、イオン種が低電圧
加速によるため、基板１１に打込まれる事なく、表面に
等間隔で配列すゐ、イオン種が等間隔で配列する原因は
、イオン種が勢価で構成され、各々が同価のクーロン力
で反発するためである。いま、質量分析部をイオン＠ｔ
Ｖ移送部に取シ付叶、２価のイオン種のみに基板表面に
軟着陸させると、第２図（３）に示す如く、イオン種２
２は基８２１上に第２図（ＡｊＫ示すイオン間隔の２倍
の間隔で勢間隔に並ぶこととなる。更に、いま、２価の
８（＋１イオン３２を基板３１上に形成し、電子線を照
射して、８イイオンを１＠（ＤＢｔ”ｌｆＣ変換後、１
価のシルオン３３を軟着陸させるととＫより、第２ｖＡ
（ａｌｌ示すごとく、ａ（とＰＯイオンが交互に等間隔
に並んだ原子層が形成される。基板への原子の固定祉基
板を３００℃強度に加熱して行なわれる。By applying the atomic layer epitaxial device having the basic configuration shown in FIG. 1, as shown in FIG. 2, single atomic layer epitaxial processing becomes possible. Figure 2 μm schematically shows an epitaxial atomic layer O device in which atomic layer epitaxial layer is applied to one kind of ionic base surface 11, and 1
The nine ion species 12 with a positive valence charge are not implanted into the substrate 11 because the ion species are accelerated at a low voltage, and are arranged at equal intervals on the surface.The reason why the ion species are arranged at equal intervals is as follows. This is because ion species are composed of forces, each of which repels with the same amount of Coulomb force. Now, the mass spectrometer is ion@t
When the V-transfer section is equipped with a handle and only the divalent ion species are allowed to soft land on the substrate surface, as shown in Figure 2 (3), the ion species 2
2 are arranged on the substrate 821 at an interval twice the ion interval shown in FIG. is irradiated to convert 8 ions into 1@(DBt”lfC, 1
If you make a soft landing on Shiruon 33, the 2nd vA
As shown, an atomic layer in which a(a) and PO ions are alternately arranged at equal intervals is formed. Fixation of atoms to the substrate is carried out by heating the substrate to 300°C.

以上の如く、本発明によれば等間隔に並んだ原子層をエ
ピタキシャル成長できると共に、２種以上の原子を同一
原子層内に均一に配列し九原子層エピタキクヤル成長が
可能となる効果がある。As described above, the present invention has the effect of not only being able to epitaxially grow atomic layers arranged at equal intervals, but also enabling epitaxial growth of nine atomic layers by uniformly arranging two or more types of atoms in the same atomic layer.

さらに、本発情によれば、例えば正イオンのｚｇ＆十と
陰イオンのＢ等とを交互に基板上に軟着陸させることに
よｐｚ％Ｂ勢の化合物を一化金物層として横方崗１１ｃ
Ｚ％８等の化合物として、あるいは縦方向ｙｃｚ％Ｂ等
の化合物として原子層エピタキシャル層を形成すること
もできる。Furthermore, according to this method, by alternately soft-landing positive ions zg & 10 and negative ions B, etc. on the substrate, a pz%B compound is formed as a monolithic metal layer to form a horizontal grating 11c.
An atomic layer epitaxial layer can also be formed as a compound such as Z%8 or as a compound such as vertically ycz%B.

【図面の簡単な説明】[Brief explanation of drawings]

第ｉｍｌは本発明の原子層エピタキシャル装置の基本構
成を示す模式図、第２図は本発明による原子層エピタキ
シャル処理の原子層の成員法を模式％式％ ｌ・・イオン源容器　、２・・導入口　３・ｅ高周波電
極　４，５・・加速電極　６・・プラズマ７　、１１　
、２１　、３］・・試料基＠　　１２，２２，３２，３
３＠・イオン種。 以　　　上 出願人　株式会社−訪精工★ 代通人　弁理士最　上　　務 一；　−−−：　　　　　　　　１ １　： 二二二ト／７ 第１図 第２３Fig. 2 is a schematic diagram showing the basic configuration of the atomic layer epitaxial device of the present invention, and Fig. 2 is a schematic diagram showing the method of forming an atomic layer in the atomic layer epitaxial processing according to the present invention. Inlet port 3・e High frequency electrode 4, 5・・Acceleration electrode 6・・Plasma 7, 11
, 21 , 3]...Sample base @ 12, 22, 32, 3
3@・Ionic species. Applicant: Hoseiko Co., Ltd.★ Representative: Patent Attorney Tsumuichi Mogami; ---: 1 1: 222/7 Figure 1, Figure 23

Claims (1)

【特許請求の範囲】 Ｉｌｌ　　少なくともイオン源と、骸イオン源からイオ
ンを５００ボルト以下の低電圧で加速し、基板表ｉ１Ｋ
ｍ記イオンを軟着陸させる部位を具備することを特徴と
する原子層エピタキシャル装−０（２１２つ以上のイオ
ン源を具備する特許請求の範囲第１項記載の原子層エピ
タキシャル装置。 １３１　　イオン源から２種以上の原子イオンを発生す
るイオン源を具備する特許請求の範囲第１項記載の原子
層エピタキシャル装置。 ■　イオン源から２種以上の電荷量を有する原子イオン
を発生するイオン源機構を具備する特許請求の＠１第１
項記載の原子層エピタキシャル装置。 １５１　　イオン源と低電圧加速電子照射機構を具備す
る電子層エピタキシャル装置。[Claims] Ill Accelerate ions from at least an ion source and a skeleton ion source at a low voltage of 500 volts or less,
Atomic layer epitaxial device-0 (21 Atomic layer epitaxial device according to claim 1, which is equipped with two or more ion sources. 131 From the ion source 2 The atomic layer epitaxial device according to claim 1, which is equipped with an ion source that generates atomic ions of two or more types. ■ An ion source mechanism that generates atomic ions having two or more types of charge from the ion source. Patent claim @1 1st
The atomic layer epitaxial device described in . 151 Electron layer epitaxial device equipped with an ion source and a low voltage accelerated electron irradiation mechanism.
JP19979881A 1981-12-11 1981-12-11 Atomic layer epitaxial device Pending JPS58101419A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19979881A JPS58101419A (en) 1981-12-11 1981-12-11 Atomic layer epitaxial device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19979881A JPS58101419A (en) 1981-12-11 1981-12-11 Atomic layer epitaxial device

Publications (1)

Publication Number Publication Date
JPS58101419A true JPS58101419A (en) 1983-06-16

Family

ID=16413792

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19979881A Pending JPS58101419A (en) 1981-12-11 1981-12-11 Atomic layer epitaxial device

Country Status (1)

Country Link
JP (1) JPS58101419A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100474847B1 (en) * 2001-05-07 2005-03-08 삼성전자주식회사 Thin film comprising multi components and method for forming the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100474847B1 (en) * 2001-05-07 2005-03-08 삼성전자주식회사 Thin film comprising multi components and method for forming the same

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