JPS5795890A - Crystal growing device - Google Patents
Crystal growing deviceInfo
- Publication number
- JPS5795890A JPS5795890A JP17124580A JP17124580A JPS5795890A JP S5795890 A JPS5795890 A JP S5795890A JP 17124580 A JP17124580 A JP 17124580A JP 17124580 A JP17124580 A JP 17124580A JP S5795890 A JPS5795890 A JP S5795890A
- Authority
- JP
- Japan
- Prior art keywords
- rod
- disposed
- mirrors
- rotating ellipsoidal
- focus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To grow a single crystal of a large diameter and a large size by disposing rotating ellipsoidal mirrors horizontally at equal angular intervals and concentrating heating energy to a raw material rod and a growing crystal rod in a floating zone method.
CONSTITUTION: The respective leading ends of a raw material rod 5 and a growing crystal rod 6 are brought in contact with each other and ≥3 pieces of rotating ellipsoidal mirrors 1 having heating elements 2 are disposed horizontally at equal angular intervals around these rods. A heating element 2 is disposed at one focus of each mirror 1, and the mirrors are so disposed that the other focus is on the circumference centering at the center of rotation of the rod 5 and the rod 6. The major axis (a) and mirror axis (b) of the rotating ellipsoidal mirros are set at about 0.50<b/a<0.86, and the diameter (c) and length (d) of the filament of each lamp 2 are set at about c=b/10Wb/50, d=a/5Wa/30. When the voltage of the lamps 2 is increased by turning on an electric power source, the rod 5 melts to form a melt 4, and the rod 5 is moved downward as it is, whereby a single crystal is grown.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17124580A JPS5795890A (en) | 1980-12-04 | 1980-12-04 | Crystal growing device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17124580A JPS5795890A (en) | 1980-12-04 | 1980-12-04 | Crystal growing device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5795890A true JPS5795890A (en) | 1982-06-14 |
Family
ID=15919730
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17124580A Pending JPS5795890A (en) | 1980-12-04 | 1980-12-04 | Crystal growing device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5795890A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03128667U (en) * | 1990-04-09 | 1991-12-25 | ||
WO2008084529A1 (en) * | 2007-01-10 | 2008-07-17 | Crystal Systems Corp. | Floating zone melting apparatus |
-
1980
- 1980-12-04 JP JP17124580A patent/JPS5795890A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03128667U (en) * | 1990-04-09 | 1991-12-25 | ||
WO2008084529A1 (en) * | 2007-01-10 | 2008-07-17 | Crystal Systems Corp. | Floating zone melting apparatus |
KR101157311B1 (en) | 2007-01-10 | 2012-06-15 | 크리스탈 시스템스 코포레이션 | Floating zone melting apparatus |
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