JPS5787124A - Antimony ion source - Google Patents

Antimony ion source

Info

Publication number
JPS5787124A
JPS5787124A JP16257080A JP16257080A JPS5787124A JP S5787124 A JPS5787124 A JP S5787124A JP 16257080 A JP16257080 A JP 16257080A JP 16257080 A JP16257080 A JP 16257080A JP S5787124 A JPS5787124 A JP S5787124A
Authority
JP
Japan
Prior art keywords
ion
wire
field emission
ion source
make
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16257080A
Other languages
Japanese (ja)
Inventor
Takehisa Yashiro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP16257080A priority Critical patent/JPS5787124A/en
Publication of JPS5787124A publication Critical patent/JPS5787124A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To extract Sb ion by using eutectic alloys of two or more elements such as Sb and Au or Zn, Pb, Cu as ion source keeping low steam pressure in molten state utilizing the difference in the intensity of field emission. CONSTITUTION:The weight of Au and Sb are determined to make a predetermined composition. Au wire 7 is wound around tungsten filament 6 to make a spiral basket and Sb8 wrapped by the Au wire is held by a ceramic 5. When current is applied to the filament 6 to heat up the Au wire 7 and the Sb wire 8, the alloy begins to form at a contact surface and finally the alloy of prefixed composition is obtained. When electric field is applied to the molten metal through outside electrodes 9, the field emission is obtained only at the Sb ion. Using this ion source, the Sb ion seed of large current can be extracted through a fine hole with a very little scattering of energy by the field emission. The Sb ion beam can be focused by a lens.
JP16257080A 1980-11-20 1980-11-20 Antimony ion source Pending JPS5787124A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16257080A JPS5787124A (en) 1980-11-20 1980-11-20 Antimony ion source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16257080A JPS5787124A (en) 1980-11-20 1980-11-20 Antimony ion source

Publications (1)

Publication Number Publication Date
JPS5787124A true JPS5787124A (en) 1982-05-31

Family

ID=15757092

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16257080A Pending JPS5787124A (en) 1980-11-20 1980-11-20 Antimony ion source

Country Status (1)

Country Link
JP (1) JPS5787124A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59168652A (en) * 1983-03-16 1984-09-22 Hitachi Ltd Method and apparatus for correcting element
JPS63170940A (en) * 1987-12-02 1988-07-14 Hitachi Ltd Correction of device
JPS63296241A (en) * 1987-12-02 1988-12-02 Hitachi Ltd Element correction device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59168652A (en) * 1983-03-16 1984-09-22 Hitachi Ltd Method and apparatus for correcting element
JPH0514416B2 (en) * 1983-03-16 1993-02-25 Hitachi Ltd
JPS63170940A (en) * 1987-12-02 1988-07-14 Hitachi Ltd Correction of device
JPS63296241A (en) * 1987-12-02 1988-12-02 Hitachi Ltd Element correction device

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