JPS5780751A - Metallic lead for semiconductor device - Google Patents

Metallic lead for semiconductor device

Info

Publication number
JPS5780751A
JPS5780751A JP55156401A JP15640180A JPS5780751A JP S5780751 A JPS5780751 A JP S5780751A JP 55156401 A JP55156401 A JP 55156401A JP 15640180 A JP15640180 A JP 15640180A JP S5780751 A JPS5780751 A JP S5780751A
Authority
JP
Japan
Prior art keywords
header
metallic lead
pellet
lead
metallic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55156401A
Other languages
Japanese (ja)
Inventor
Iwami Abiko
Koji Ando
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Rectifier Corp Japan Ltd
Infineon Technologies Americas Corp
Original Assignee
International Rectifier Corp Japan Ltd
Infineon Technologies Americas Corp
International Rectifier Corp USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Rectifier Corp Japan Ltd, Infineon Technologies Americas Corp, International Rectifier Corp USA filed Critical International Rectifier Corp Japan Ltd
Priority to JP55156401A priority Critical patent/JPS5780751A/en
Publication of JPS5780751A publication Critical patent/JPS5780751A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492—Bases or plates or solder therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Abstract

PURPOSE:To reduce the numbers of parts and assembling steps by bonding a metal having similar thermal expansion coefficient to an Si pellet to a header of a metallic lead by a metallizing method. CONSTITUTION:A header 12 is formed at one end of a metallic lead 11, and a collar 13 is formed at the rear end at the predetermined distance from the header 12. A metallic film layer M is formed by a metallizing method to the surface of the header 12 of the lead 11 and the outer peripheral surface of the header. Thus, the difference of the thermal expansion between the Si pellet and the metallic lead upon heating at high temperature at the glass baking time is alleviated by the layer M, thereby reducing the thermal stress to the Si pellet as small as possible. Since it does not require additional disc, the numbers of the parts and assembling steps can be reduced.
JP55156401A 1980-11-06 1980-11-06 Metallic lead for semiconductor device Pending JPS5780751A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55156401A JPS5780751A (en) 1980-11-06 1980-11-06 Metallic lead for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55156401A JPS5780751A (en) 1980-11-06 1980-11-06 Metallic lead for semiconductor device

Publications (1)

Publication Number Publication Date
JPS5780751A true JPS5780751A (en) 1982-05-20

Family

ID=15626925

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55156401A Pending JPS5780751A (en) 1980-11-06 1980-11-06 Metallic lead for semiconductor device

Country Status (1)

Country Link
JP (1) JPS5780751A (en)

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