JPS577930A - Method for electron beam exposure and apparatus used in said method - Google Patents

Method for electron beam exposure and apparatus used in said method

Info

Publication number
JPS577930A
JPS577930A JP8238680A JP8238680A JPS577930A JP S577930 A JPS577930 A JP S577930A JP 8238680 A JP8238680 A JP 8238680A JP 8238680 A JP8238680 A JP 8238680A JP S577930 A JPS577930 A JP S577930A
Authority
JP
Japan
Prior art keywords
electron beam
moves
electron
high frequency
screening plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8238680A
Other languages
Japanese (ja)
Inventor
Yasuo Furukawa
Yoshiaki Goto
Seigo Igaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8238680A priority Critical patent/JPS577930A/en
Publication of JPS577930A publication Critical patent/JPS577930A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To control the amount of exposure without changing the conditions of an electron gun, by applying a high frequency voltage on an electron beam deflection device, vibrating the electron beam at a right angle, passing the beam through a screening plate having an opening, and controlling the pulse width of the pulse shaped beam. CONSTITUTION:The high frequency voltage is applied on the reflecting plates 11 of the electron beam exposing apparatus, and the high frequency alternating field is formed. The electron beam 2 is deflected by the electric field and vibrate as shown by an arrow 16. The electron beam 2 passes through a screening plate 14 when the beam moves from A to B. When the electron beam exceeds B, it is screened by the screening plate 14, and is not sent out. This state continues until the beam moves from B to C and B again. The electron beam passes the opening 17 when it moves from B to A and to D. The beam is not sent out when it moves from D to E and D again. In this method, the electron beam is transformed into a pulse shaped beam, and the amount of exposure can be readily and precisely controlled without changing the conditions of the electron gun.
JP8238680A 1980-06-18 1980-06-18 Method for electron beam exposure and apparatus used in said method Pending JPS577930A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8238680A JPS577930A (en) 1980-06-18 1980-06-18 Method for electron beam exposure and apparatus used in said method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8238680A JPS577930A (en) 1980-06-18 1980-06-18 Method for electron beam exposure and apparatus used in said method

Publications (1)

Publication Number Publication Date
JPS577930A true JPS577930A (en) 1982-01-16

Family

ID=13773136

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8238680A Pending JPS577930A (en) 1980-06-18 1980-06-18 Method for electron beam exposure and apparatus used in said method

Country Status (1)

Country Link
JP (1) JPS577930A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09205063A (en) * 1996-12-09 1997-08-05 Fujitsu Ltd Charged particle beam exposing method
JP2007189206A (en) * 2005-12-15 2007-07-26 Nuflare Technology Inc Charged particle beam lithography method and apparatus thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5186355A (en) * 1975-01-27 1976-07-28 Nippon Electron Optics Lab

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5186355A (en) * 1975-01-27 1976-07-28 Nippon Electron Optics Lab

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09205063A (en) * 1996-12-09 1997-08-05 Fujitsu Ltd Charged particle beam exposing method
JP2007189206A (en) * 2005-12-15 2007-07-26 Nuflare Technology Inc Charged particle beam lithography method and apparatus thereof

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