JPS5776833A - Heat resistant metal depositing method and product thereof - Google Patents

Heat resistant metal depositing method and product thereof

Info

Publication number
JPS5776833A
JPS5776833A JP13391281A JP13391281A JPS5776833A JP S5776833 A JPS5776833 A JP S5776833A JP 13391281 A JP13391281 A JP 13391281A JP 13391281 A JP13391281 A JP 13391281A JP S5776833 A JPS5776833 A JP S5776833A
Authority
JP
Japan
Prior art keywords
product
heat resistant
resistant metal
depositing method
metal depositing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13391281A
Other languages
English (en)
Inventor
Ii Miraa Nikorusu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JPS5776833A publication Critical patent/JPS5776833A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
JP13391281A 1980-09-04 1981-08-25 Heat resistant metal depositing method and product thereof Pending JPS5776833A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US18397480A 1980-09-04 1980-09-04

Publications (1)

Publication Number Publication Date
JPS5776833A true JPS5776833A (en) 1982-05-14

Family

ID=22675091

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13391281A Pending JPS5776833A (en) 1980-09-04 1981-08-25 Heat resistant metal depositing method and product thereof

Country Status (3)

Country Link
JP (1) JPS5776833A (ja)
DE (1) DE3134702C2 (ja)
NL (1) NL189819C (ja)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59217327A (ja) * 1983-05-26 1984-12-07 Toshiba Corp 半導体装置の製造方法
JPS6050920A (ja) * 1983-08-30 1985-03-22 Toshiba Corp 半導体装置の製造方法
JPS6091631A (ja) * 1983-10-25 1985-05-23 Toshiba Corp 半導体装置の製造方法
JPS6143481A (ja) * 1984-08-08 1986-03-03 Oki Electric Ind Co Ltd シヨツトキゲ−ト電界効果トランジスタの製造方法
US4582563A (en) * 1983-11-28 1986-04-15 Kabushiki Kaisha Toshiba Process for forming multi-layer interconnections
JPS61139026A (ja) * 1984-12-11 1986-06-26 Fujitsu Ltd 半導体装置の製造方法
US4616401A (en) * 1984-06-19 1986-10-14 Kabushiki Kaisha Toshiba Method of fabricating an insulated gate type field-effect transistor
US4670967A (en) * 1983-12-27 1987-06-09 Kabushiki Kaisha Toshiba Forming multilayer interconnections for a semiconductor device by vapor phase growth process
JPS6311669A (ja) * 1986-06-30 1988-01-19 Ulvac Corp Ｃｖｄ法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6042823A (ja) * 1983-08-19 1985-03-07 Toshiba Corp 薄膜形成方法
US4552783A (en) * 1984-11-05 1985-11-12 General Electric Company Enhancing the selectivity of tungsten deposition on conductor and semiconductor surfaces
JP2592844B2 (ja) * 1987-07-10 1997-03-19 株式会社東芝 高融点金属膜の形成方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53114350A (en) * 1977-03-16 1978-10-05 Toshiba Corp Semiconductor and its manufacture

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3697342A (en) * 1970-12-16 1972-10-10 Ibm Method of selective chemical vapor deposition
DE2718518C3 (de) * 1977-04-26 1984-04-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Abscheiden einer Schicht auf der Innenseite von Hohlräumen eines Werkstückes

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53114350A (en) * 1977-03-16 1978-10-05 Toshiba Corp Semiconductor and its manufacture

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59217327A (ja) * 1983-05-26 1984-12-07 Toshiba Corp 半導体装置の製造方法
JPS6050920A (ja) * 1983-08-30 1985-03-22 Toshiba Corp 半導体装置の製造方法
US4597167A (en) * 1983-08-30 1986-07-01 Kabushiki Kaisha Toshiba Method of forming a metal film on a selectively diffused layer
JPS6091631A (ja) * 1983-10-25 1985-05-23 Toshiba Corp 半導体装置の製造方法
JPH0580815B2 (ja) * 1983-10-25 1993-11-10 Tokyo Shibaura Electric Co
US4582563A (en) * 1983-11-28 1986-04-15 Kabushiki Kaisha Toshiba Process for forming multi-layer interconnections
US4670967A (en) * 1983-12-27 1987-06-09 Kabushiki Kaisha Toshiba Forming multilayer interconnections for a semiconductor device by vapor phase growth process
US4616401A (en) * 1984-06-19 1986-10-14 Kabushiki Kaisha Toshiba Method of fabricating an insulated gate type field-effect transistor
JPS6143481A (ja) * 1984-08-08 1986-03-03 Oki Electric Ind Co Ltd シヨツトキゲ−ト電界効果トランジスタの製造方法
JPS61139026A (ja) * 1984-12-11 1986-06-26 Fujitsu Ltd 半導体装置の製造方法
JPS6311669A (ja) * 1986-06-30 1988-01-19 Ulvac Corp Ｃｖｄ法

Also Published As

Publication number Publication date
DE3134702C2 (de) 1983-12-22
DE3134702A1 (de) 1982-03-25
NL189819C (nl) 1993-08-02
NL8104092A (nl) 1982-04-01
NL189819B (nl) 1993-03-01

Similar Documents

Publication Publication Date Title
JPS57110603A (en) Metal products and manufacture
GB2086423B (en) Tungsten-free alloy and process for producing same
GB2109385B (en) Metallic coating method and coating compositions
GB2090165B (en) Non-stick coated steel article
JPS56119766A (en) Heat resistant machine parts and production thereof
GB2071485B (en) Heat resistant cabinet and method for its manufacture
DE3166807D1 (en) Heat and grease resistant containers
GB8326141D0 (en) Metal deactivator
JPS5776833A (en) Heat resistant metal depositing method and product thereof
GB2080715B (en) Continuous metal casting method apparatus and products
JPS56131022A (en) Method of forming metallic product
JPS5771466A (en) Sheet like article and method
DE3160684D1 (en) Method of and arrangement for recovering the heat of a continuously cast strand
JPS56108805A (en) Abrasion resistant metal article and method
PH18088A (en) Metal containers and their manufacturing method and apparatus
GB2087929B (en) Sintered metal articles and their manufacture
GB2081433B (en) Metal heating furnace
DE3162245D1 (en) Carbapenams and carbapen-2-ems and process therefor
EP0062997A3 (en) Refractory articles and a method for the manufacture thereof
GB2069391B (en) Forming metal articles
JPS57117648A (en) Raised product and method
GB2079659B (en) Method for heat treating metal
JPS5792188A (en) Electrode for metal deposition and method
JPS5779102A (en) Metal powder producing method and device
JPS57142354A (en) Composite material giving metallic coating product and its method and product obtained through said method