JPS5775738U - - Google Patents

Info

Publication number
JPS5775738U
JPS5775738U JP15326580U JP15326580U JPS5775738U JP S5775738 U JPS5775738 U JP S5775738U JP 15326580 U JP15326580 U JP 15326580U JP 15326580 U JP15326580 U JP 15326580U JP S5775738 U JPS5775738 U JP S5775738U
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15326580U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP15326580U priority Critical patent/JPS5775738U/ja
Publication of JPS5775738U publication Critical patent/JPS5775738U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP15326580U 1980-10-27 1980-10-27 Pending JPS5775738U (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15326580U JPS5775738U (fr) 1980-10-27 1980-10-27

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15326580U JPS5775738U (fr) 1980-10-27 1980-10-27

Publications (1)

Publication Number Publication Date
JPS5775738U true JPS5775738U (fr) 1982-05-11

Family

ID=29512525

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15326580U Pending JPS5775738U (fr) 1980-10-27 1980-10-27

Country Status (1)

Country Link
JP (1) JPS5775738U (fr)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009117845A (ja) * 2007-11-08 2009-05-28 Applied Materials Inc 膜均一性のための回転温度制御基板ペデスタル
JP2009530806A (ja) * 2006-03-14 2009-08-27 エルジー イノテック カンパニー リミテッド サセプタ及びこれを備える半導体製造装置
US8889566B2 (en) 2012-09-11 2014-11-18 Applied Materials, Inc. Low cost flowable dielectric films
KR101483210B1 (ko) * 2013-09-17 2015-01-15 한국생산기술연구원 온도균일도가 향상된 서셉터
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
US9144147B2 (en) 2011-01-18 2015-09-22 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US9412581B2 (en) 2014-07-16 2016-08-09 Applied Materials, Inc. Low-K dielectric gapfill by flowable deposition

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009530806A (ja) * 2006-03-14 2009-08-27 エルジー イノテック カンパニー リミテッド サセプタ及びこれを備える半導体製造装置
JP2009117845A (ja) * 2007-11-08 2009-05-28 Applied Materials Inc 膜均一性のための回転温度制御基板ペデスタル
US9144147B2 (en) 2011-01-18 2015-09-22 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US8889566B2 (en) 2012-09-11 2014-11-18 Applied Materials, Inc. Low cost flowable dielectric films
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
KR101483210B1 (ko) * 2013-09-17 2015-01-15 한국생산기술연구원 온도균일도가 향상된 서셉터
US9412581B2 (en) 2014-07-16 2016-08-09 Applied Materials, Inc. Low-K dielectric gapfill by flowable deposition

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