JPS5774999A - X-ray tube device - Google Patents
X-ray tube deviceInfo
- Publication number
- JPS5774999A JPS5774999A JP55150668A JP15066880A JPS5774999A JP S5774999 A JPS5774999 A JP S5774999A JP 55150668 A JP55150668 A JP 55150668A JP 15066880 A JP15066880 A JP 15066880A JP S5774999 A JPS5774999 A JP S5774999A
- Authority
- JP
- Japan
- Prior art keywords
- heat
- target
- ray tube
- performance
- faces
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J35/00—X-ray tubes
- H01J35/02—Details
- H01J35/04—Electrodes ; Mutual position thereof; Constructional adaptations therefor
- H01J35/08—Anodes; Anti cathodes
- H01J35/10—Rotary anodes; Arrangements for rotating anodes; Cooling rotary anodes
- H01J35/105—Cooling of rotating anodes, e.g. heat emitting layers or structures
- H01J35/106—Active cooling, e.g. fluid flow, heat pipes
Abstract
PURPOSE:To improve the cooling performance of an X-ray tube device, and increase the voltage resisting performance of the device by installing the heat absorbing part of a heat pipe so that the part is located outside a glass bulb and faces to the back surface of a target, and introducing the heat discharged from the target to a heat discharging part installed outside a tube case. CONSTITUTION:A heat absorbing part 7a of a heat pipe 7 is set outside a glass bulb 4 of a rotary anode X-ray tube 1 so that it faces to the back surface of a target 3. The surface of the part 7a which faces to the target 3 is blackened in order to improve its heat absorption. Heat discharged from the target 3 is passed through the bulb 4 and an insulating oil 10, absorbed by the part 7a, introduced to a heat discharging part 7b of the heat pipe 7 which is located outside a case 2, and is discharged by means of a blower 8. Consequently, the voltage resistant performance and the load tolerance of an X-ray tube device can be increased by improving the performance of cooling the back surface of the target 3 having the largest temperature rise.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55150668A JPS5774999A (en) | 1980-10-29 | 1980-10-29 | X-ray tube device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55150668A JPS5774999A (en) | 1980-10-29 | 1980-10-29 | X-ray tube device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5774999A true JPS5774999A (en) | 1982-05-11 |
Family
ID=15501861
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55150668A Pending JPS5774999A (en) | 1980-10-29 | 1980-10-29 | X-ray tube device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5774999A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008152926A1 (en) * | 2007-06-15 | 2008-12-18 | Nikon Corporation | Euv light source, euv exposure apparatus and semiconductor device manufacturing method |
-
1980
- 1980-10-29 JP JP55150668A patent/JPS5774999A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008152926A1 (en) * | 2007-06-15 | 2008-12-18 | Nikon Corporation | Euv light source, euv exposure apparatus and semiconductor device manufacturing method |
JP2008311465A (en) * | 2007-06-15 | 2008-12-25 | Nikon Corp | Euv light source, euv exposure device, and manufacturing method of semiconductor device |
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