JPS5774999A - X-ray tube device - Google Patents

X-ray tube device

Info

Publication number
JPS5774999A
JPS5774999A JP55150668A JP15066880A JPS5774999A JP S5774999 A JPS5774999 A JP S5774999A JP 55150668 A JP55150668 A JP 55150668A JP 15066880 A JP15066880 A JP 15066880A JP S5774999 A JPS5774999 A JP S5774999A
Authority
JP
Japan
Prior art keywords
heat
target
ray tube
performance
faces
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55150668A
Other languages
Japanese (ja)
Inventor
Munetomo Kotabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP55150668A priority Critical patent/JPS5774999A/en
Publication of JPS5774999A publication Critical patent/JPS5774999A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J35/00—X-ray tubes
    • H01J35/02—Details
    • H01J35/04—Electrodes ; Mutual position thereof; Constructional adaptations therefor
    • H01J35/08—Anodes; Anti cathodes
    • H01J35/10—Rotary anodes; Arrangements for rotating anodes; Cooling rotary anodes
    • H01J35/105—Cooling of rotating anodes, e.g. heat emitting layers or structures
    • H01J35/106—Active cooling, e.g. fluid flow, heat pipes

Landscapes

  • Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • X-Ray Techniques (AREA)

Abstract

PURPOSE:To improve the cooling performance of an X-ray tube device, and increase the voltage resisting performance of the device by installing the heat absorbing part of a heat pipe so that the part is located outside a glass bulb and faces to the back surface of a target, and introducing the heat discharged from the target to a heat discharging part installed outside a tube case. CONSTITUTION:A heat absorbing part 7a of a heat pipe 7 is set outside a glass bulb 4 of a rotary anode X-ray tube 1 so that it faces to the back surface of a target 3. The surface of the part 7a which faces to the target 3 is blackened in order to improve its heat absorption. Heat discharged from the target 3 is passed through the bulb 4 and an insulating oil 10, absorbed by the part 7a, introduced to a heat discharging part 7b of the heat pipe 7 which is located outside a case 2, and is discharged by means of a blower 8. Consequently, the voltage resistant performance and the load tolerance of an X-ray tube device can be increased by improving the performance of cooling the back surface of the target 3 having the largest temperature rise.
JP55150668A 1980-10-29 1980-10-29 X-ray tube device Pending JPS5774999A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55150668A JPS5774999A (en) 1980-10-29 1980-10-29 X-ray tube device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55150668A JPS5774999A (en) 1980-10-29 1980-10-29 X-ray tube device

Publications (1)

Publication Number Publication Date
JPS5774999A true JPS5774999A (en) 1982-05-11

Family

ID=15501861

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55150668A Pending JPS5774999A (en) 1980-10-29 1980-10-29 X-ray tube device

Country Status (1)

Country Link
JP (1) JPS5774999A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008152926A1 (en) * 2007-06-15 2008-12-18 Nikon Corporation Euv light source, euv exposure apparatus and semiconductor device manufacturing method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008152926A1 (en) * 2007-06-15 2008-12-18 Nikon Corporation Euv light source, euv exposure apparatus and semiconductor device manufacturing method
JP2008311465A (en) * 2007-06-15 2008-12-25 Nikon Corp Euv light source, euv exposure device, and manufacturing method of semiconductor device

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