JPS5773173A - Electroless plated body - Google Patents

Electroless plated body

Info

Publication number
JPS5773173A
JPS5773173A JP55148486A JP14848680A JPS5773173A JP S5773173 A JPS5773173 A JP S5773173A JP 55148486 A JP55148486 A JP 55148486A JP 14848680 A JP14848680 A JP 14848680A JP S5773173 A JPS5773173 A JP S5773173A
Authority
JP
Japan
Prior art keywords
substrate
layer
plating
2mum
insulator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55148486A
Other languages
Japanese (ja)
Other versions
JPS6021225B2 (en
Inventor
Yoshihiro Ono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP55148486A priority Critical patent/JPS6021225B2/en
Publication of JPS5773173A publication Critical patent/JPS5773173A/en
Publication of JPS6021225B2 publication Critical patent/JPS6021225B2/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Liquid Crystal (AREA)
  • General Chemical & Material Sciences (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Camera Data Copying Or Recording (AREA)
  • Surface Treatment Of Glass (AREA)
  • Chemically Coating (AREA)

Abstract

PURPOSE:To obtain a uniform plated film with excellent adhesive properties by forming a semiconductor layer on a substrate of an insulator and plating the layer with the desired metal in a specified thickness or below. CONSTITUTION:A layer of a semiconductor such as In2O3, SnO2 or TiO2 is formed on a substrate of an insulator such as glass, plastics, ceramics or a crystal body by CVD, sputtering, vapor deposition, dipping or other method. The substrate is then subjected to pretreatment for electroless plating by an ordinary method, and it is immersed in an electorless Ni bath to form an Ni plated film having <=2mum thicknes on the substrate. When the plating thickness exceeds 2mum, the adhesion is deteriorated.
JP55148486A 1980-10-23 1980-10-23 Electroless plating body Expired JPS6021225B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55148486A JPS6021225B2 (en) 1980-10-23 1980-10-23 Electroless plating body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55148486A JPS6021225B2 (en) 1980-10-23 1980-10-23 Electroless plating body

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP1064606A Division JPH0263014A (en) 1989-03-16 1989-03-16 Light transmitting liquid crystal display
JP6460589A Division JPH0257336A (en) 1989-03-16 1989-03-16 Electroless plating for plastic

Publications (2)

Publication Number Publication Date
JPS5773173A true JPS5773173A (en) 1982-05-07
JPS6021225B2 JPS6021225B2 (en) 1985-05-25

Family

ID=15453826

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55148486A Expired JPS6021225B2 (en) 1980-10-23 1980-10-23 Electroless plating body

Country Status (1)

Country Link
JP (1) JPS6021225B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59116721A (en) * 1982-12-24 1984-07-05 Hitachi Ltd Liquid-crystal display device
US5270229A (en) * 1989-03-07 1993-12-14 Matsushita Electric Industrial Co., Ltd. Thin film semiconductor device and process for producing thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5050946A (en) * 1973-09-03 1975-05-07
JPS51131296A (en) * 1975-05-12 1976-11-15 Hitachi Ltd Liquid crystal matrix panel
JPS535690A (en) * 1976-07-01 1978-01-19 United States Surgical Corp Disposable liquid sample card and measuring instrument using same
JPS5752021A (en) * 1980-09-12 1982-03-27 Citizen Watch Co Ltd Manufacture of liquid crystal display cell

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5050946A (en) * 1973-09-03 1975-05-07
JPS51131296A (en) * 1975-05-12 1976-11-15 Hitachi Ltd Liquid crystal matrix panel
JPS535690A (en) * 1976-07-01 1978-01-19 United States Surgical Corp Disposable liquid sample card and measuring instrument using same
JPS5752021A (en) * 1980-09-12 1982-03-27 Citizen Watch Co Ltd Manufacture of liquid crystal display cell

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59116721A (en) * 1982-12-24 1984-07-05 Hitachi Ltd Liquid-crystal display device
US5270229A (en) * 1989-03-07 1993-12-14 Matsushita Electric Industrial Co., Ltd. Thin film semiconductor device and process for producing thereof

Also Published As

Publication number Publication date
JPS6021225B2 (en) 1985-05-25

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