JPS6021225B2 - Electroless plating body - Google Patents

Electroless plating body

Info

Publication number
JPS6021225B2
JPS6021225B2 JP55148486A JP14848680A JPS6021225B2 JP S6021225 B2 JPS6021225 B2 JP S6021225B2 JP 55148486 A JP55148486 A JP 55148486A JP 14848680 A JP14848680 A JP 14848680A JP S6021225 B2 JPS6021225 B2 JP S6021225B2
Authority
JP
Japan
Prior art keywords
plating
nickel
electroless
film
plated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55148486A
Other languages
Japanese (ja)
Other versions
JPS5773173A (en
Inventor
好弘 大野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suwa Seikosha KK
Original Assignee
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suwa Seikosha KK filed Critical Suwa Seikosha KK
Priority to JP55148486A priority Critical patent/JPS6021225B2/en
Publication of JPS5773173A publication Critical patent/JPS5773173A/en
Publication of JPS6021225B2 publication Critical patent/JPS6021225B2/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08Oxides
    • C23C14/086Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58After-treatment
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56After-treatment
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18Pretreatment of the material to be coated
    • C23C18/1851Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material

Description

【発明の詳細な説明】 本発明は、ガラス、プラスチック、セラミック、結晶体
等の絶縁体上に半導体層を形成し、その上に目的とする
金属メッキした無電解〆ッキ体に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electroless plated body in which a semiconductor layer is formed on an insulator such as glass, plastic, ceramic, crystal, etc., and a desired metal is plated thereon.

従来、絶縁体上に無電解メッキを行う場合、目的とする
金属メッキの密着性の向上、及び均一なメッキ膜を得る
ために、絶縁体基板面を機械的研摩、化学的研摩、及び
その両方を用いて表面を粗らしていた。
Conventionally, when performing electroless plating on an insulator, the insulator substrate surface is mechanically polished, chemically polished, or both in order to improve the adhesion of the intended metal plating and to obtain a uniform plating film. was used to roughen the surface.

しかし、それにもかかわらず均一で密着性の良いメッキ
膜を得ることが困難であった。本発明は従釆の前工程を
省き、絶縁体基板上に半導体層を形成することによって
密着性の良い、均一なメッキ膜を得る方法を示すもので
ある。
However, in spite of this, it has been difficult to obtain a uniform plating film with good adhesion. The present invention shows a method for obtaining a uniform plating film with good adhesion by forming a semiconductor layer on an insulating substrate without performing a secondary pre-process.

本発明の無電解〆ッキの概要は以下の通りである。ガラ
ス、プラスチック、セラミック、結晶体等の絶縁体基板
上にCVD(化学気相葵着)、スパッタ、蒸着、浸涜法
等によりln203、Sn02、Ti02等の半導体層
を形成する。その基板に無電解〆ッキの通常の前処理工
程を行う。即ち、脱脂としてアルカリ性液中での超音波
洗浄、酸中和、水洗を行う。次に塩化第一スズ(SnC
Z2 )溶液に基板を浸簿する。これは、メッキすべき
金属の析出核となる触媒性金属の微粒を表面各部に一様
に還元分布させるために使用される還元溶液であり、こ
の溶液に浸濃処理を行うことをセンシタィジングという
。次に、表面の活性化を行う。これはメッキ金属の生長
核となりメッキ反応の触媒として働く微粒子を被メッキ
体表面に付着させることによって自動的に反応を始動さ
せ、メッキ膜の密着性を向上させるために行う操作でア
クティベーティングという。前述のセンシタィジングに
よって基板表面上に付着しているSnC〆2のSnと活
性触媒である金属とガイオン化傾向の相違により置換さ
れるといわれている。活性化液としては、塩化パラジウ
ム溶液(PdCそ2 )、硝酸銀溶液(AgN03)、
金溶液(HA此れ )等が使用されている。本発明によ
る基板上に形成された半導体層により、触媒金属の密着
性の向上及び無電解〆ッキ被膜の密着性の向上がなされ
ている。
The outline of the electroless sealing according to the present invention is as follows. A semiconductor layer such as ln203, Sn02, Ti02, etc. is formed on an insulating substrate such as glass, plastic, ceramic, crystal, etc. by CVD (chemical vapor deposition), sputtering, vapor deposition, immersion method, etc. The substrate is subjected to the usual pretreatment process of electroless finishing. That is, degreasing is performed by ultrasonic cleaning in an alkaline solution, acid neutralization, and water washing. Next, stannous chloride (SnC)
Z2) Immerse the substrate in the solution. This is a reducing solution used to uniformly reduce and distribute fine particles of catalytic metal, which serve as precipitation nuclei of the metal to be plated, over various parts of the surface, and the process of immersing this solution is called sensitizing. Next, the surface is activated. This is an operation called activating that is performed to automatically start the reaction and improve the adhesion of the plating film by attaching fine particles that act as growth nuclei of the plated metal and act as a catalyst for the plating reaction to the surface of the plated object. . It is said that due to the difference in the tendency of Ga ionization between Sn in SnC〆2 adhering to the surface of the substrate due to the above-mentioned sensitizing and the metal serving as an active catalyst. As the activation liquid, palladium chloride solution (PdCso2), silver nitrate solution (AgN03),
Gold solution (HA) etc. are used. The semiconductor layer formed on the substrate according to the present invention improves the adhesion of the catalyst metal and the adhesion of the electroless finishing film.

但し、無電解〆ッキのメッキ厚が2Amを越えるとメッ
キ層の剛性が増し基板との密着性が極めて悪くなるため
、本発明ではメッキ厚を2仏m以下とする。ここで、塩
化第一スズと塩化パラジウムの両塩を含んだ溶液によっ
て、センシタィジングとアクティベイティングを同時に
行ってもよい。以上のようにして得られた活性化された
基板を、公3句の無電鱗ニッケル浴、無電解鋼格、無電
藤コバルト浴、無電鱗金格(置換型メッキ俗でなく、自
己触媒型メッキ格)等に、それぞれに適当な濃度、温度
条件により浸糟する。このようにして得られたメッキ被
膜は、半導体層の付いていない部分へのメッキ被膜に比
較して、均一であり密着性も向上した。以下実施例を用
いて詳細に説明する。
However, if the plating thickness of the electroless plate exceeds 2 Am, the rigidity of the plating layer increases and the adhesion with the substrate becomes extremely poor. Therefore, in the present invention, the plating thickness is set to 2 Am or less. Here, sensitizing and activating may be performed simultaneously using a solution containing both stannous chloride and palladium chloride. The activated substrate obtained in the above manner is coated with the three common electroless nickel baths, electroless steel plates, electroless cobalt baths, and electroless gold plates (not substitution type plating, but self-catalytic plating). etc., depending on the appropriate concentration and temperature conditions. The plated film thus obtained was more uniform and had improved adhesion compared to a plated film on a portion to which no semiconductor layer was attached. This will be explained in detail below using examples.

実施例 1 CVD(化学気相漆着)によってSn02が片面付いた
ホウケィ酸系ガラス(25肌×10仇蚊)を3%KOH
溶液で脱脂、水洗後、塩化第一スズ溶液(SnC〆2
1g/夕,HC〆 lcc/夕)に5分間浸糟する。
Example 1 Borosilicate glass (25 skins x 10 mosquitoes) coated with Sn02 on one side by CVD (chemical vapor phase lacquering) was coated with 3% KOH.
After degreasing with a solution and washing with water, stannous chloride solution (SnC〆2
Soak for 5 minutes in 1g/night, HC〆lcc/day).

後、充分水洗し、塩化パラジウム溶液(PdCそ2、2
夕/そ、20cc/そ)に5分間浸糟する。後、充分水
洗し、日本カニゼン■製のシューマ−S総0を純水にて
8倍希釈した無電藤ニッケル浴(50℃)にガラス基板
を5分間浸潰し、水洗、湯洗後乾燥した。得られたメッ
キ面(メッキ厚1600A)で20kgの圧力をかけて
6回こすったところ、Sの2層についたニッケル面には
何の変化も見られなかったが、ガラス面に直接ついたニ
ッケル面にはニッケルが剥離した跡が見られた。実施例
2蒸着によって1〜03が片面付いたホウケィ酸素ガ
ラス(25柳×10比帆)を実施例1と同様のメッキ工
程によってニッケルメッキ(1600A厚)を行った。
After that, wash thoroughly with water and add palladium chloride solution (PdC solution 2,2
Soak for 5 minutes in the evening (20cc/so). Thereafter, the glass substrate was thoroughly washed with water, and the glass substrate was immersed for 5 minutes in a non-densified nickel bath (50° C.) in which Schumer S Total 0 (manufactured by Nippon Kanigen ■) was diluted 8 times with pure water, and dried after washing with water and hot water. When the resulting plated surface (plating thickness: 1600A) was rubbed 6 times under a pressure of 20 kg, no change was observed on the nickel surface attached to the two layers of S, but the nickel attached directly to the glass surface showed no change. Traces of nickel peeling were seen on the surface. Example 2 Oxygen glass (25 Yanagi x 10 Hiho) with numbers 1 to 03 attached on one side by vapor deposition was nickel plated (1600A thick) using the same plating process as in Example 1.

得られたメッキ面をサラシで20kgの圧力をかけて6
回こすったところ、1り03層に付いたニッケルメッキ
には何の変化も見られなかったが、ガラス面に直接つい
たニッケル面にはニッケルが剥離した跡が見られた。実
施例 3 蒸着によってSn02が片面だけ付いたPET(ポリエ
チレンテレフタレート)フィルムを3%KOHで脱脂水
洗後、日立化成製増感剤HS−101Bを所定の手段に
て希釈した溶液に3分間浸済し、水洗後、日立化成製密
着促進剤ADP−201をイオン交換水にて8倍希釈し
た溶液に5分間浸潰し、水洗後、日本カニゼン■製のシ
ューマーS680をイオン交換水にて8倍希釈した無電
解ニッケル格(45qo)に30分間(メッキ言1〆)
浸潰した。
Apply 20kg of pressure to the resulting plated surface with a sander.6
When rubbed several times, no change was observed in the nickel plating on the 103 layer, but traces of nickel peeling were seen on the nickel surface directly attached to the glass surface. Example 3 A PET (polyethylene terephthalate) film with Sn02 attached on only one side by vapor deposition was degreased with 3% KOH and washed with water, and then immersed in a solution diluted with Hitachi Chemical's sensitizer HS-101B by a prescribed method for 3 minutes. After washing with water, the adhesion promoter ADP-201 manufactured by Hitachi Chemical was immersed in a solution diluted 8 times with ion exchange water for 5 minutes, and after washing with water, Schumer S680 manufactured by Nippon Kanigen ■ was diluted 8 times with ion exchange water. Electroless nickel grade (45qo) for 30 minutes (plating grade 1)
It was soaked.

両面にニッケルが析出したが、Sn02の蒸着された面
に付いたニッケル皮膜は均一で鏡面となったが、Sn0
2の付いていない面は不均一なメッキ面となった。メッ
キの密着性を調べる目的で、粘着テープを両面に貼りは
がした。Sn02の蒸着された面に付いたニッケル皮膜
は剥離しなかったが、Sn02の付いていない面のニッ
ケル皮膜は剥離した。実施例 4 蒸着によってSn02が片面だけ付いたガラスを実施例
3と同様の工程で前処理を行った。
Although nickel was deposited on both sides, the nickel film on the surface on which Sn02 was vapor-deposited was uniform and had a mirror surface.
The surface without 2 was an unevenly plated surface. In order to examine the adhesion of the plating, adhesive tape was applied to both sides and peeled off. The nickel film attached to the surface on which Sn02 was deposited did not peel off, but the nickel film on the surface to which Sn02 was not attached did peel off. Example 4 Glass with Sn02 deposited on only one side by vapor deposition was pretreated in the same process as in Example 3.

このようにして活性化されたガラス基板をシアン金力リ
ウム 5.8夕/メシアン化カリウム
6.5タノク水酸化カリウム
11.2夕/ク水素化ホウ素カリウム
10.8タノその組成のメッキ格(7ぴ○)に30分間
浸潰し、水洗後乾燥した。
The glass substrate activated in this way is treated with cyanide, gold, metal, and potassium mecyanide.
6.5 Tanok potassium hydroxide
11.2 evening/potassium borohydride
It was soaked in a plating grade (7 pi○) of the same composition for 30 minutes, washed with water, and then dried.

Sぬ2が付いている側には均一な金メッキ皮膜が付いた
が、ガラス基板上にはほとんど金メッキ皮膜がつかなか
った。実施例 5 蒸着によってSnQが片面だけ付いたホゥケィ酸系ガラ
スを実施例3と同様の工程で前処理を行った。
A uniform gold plating film was formed on the side where S-2 was attached, but almost no gold plating film was formed on the glass substrate. Example 5 A borosilicate glass coated with SnQ on only one side by vapor deposition was pretreated in the same manner as in Example 3.

無電解〆ッキ浴としては、日本カニゼン■製のシューマ
ーS680をイオン交換水にて8倍希釈した無電解ニッ
ケル格(40℃)に、活性化されたガラス基板を6分間
浸潰し、水洗、湯洗後乾燥した。S肘2の付いた面には
ニッケルメッキ被膜(メッキ厚1500A)が均一に付
いたのであるが、Sd02の付いていない面にはほとん
どニッケルメッキ被膜が付かなかった。密着性を調べる
ために、サラシで20k9の圧力をかけて6回こすった
がメッキ面には何の変化も起らなかった。以上のように
、絶縁体の基板上に半導体層を媒介として無電解〆ッキ
を行うと、均一かつ密着力の強いメッキ面が得られた。
As an electroless finishing bath, an activated glass substrate was immersed for 6 minutes in an electroless nickel grade (40°C) prepared by diluting Schumer S680 manufactured by Nippon Kanigen ■ by 8 times with ion-exchanged water, and washed with water. After washing with hot water, it was dried. The nickel plating film (plating thickness 1500A) was uniformly applied to the surface with Sd02, but almost no nickel plating film was applied to the surface without Sd02. In order to check the adhesion, I applied a pressure of 20k9 with a dry cloth and rubbed it 6 times, but no change occurred on the plated surface. As described above, when electroless plating was performed on an insulating substrate using a semiconductor layer as a medium, a plated surface with uniform and strong adhesion was obtained.

応用例を図を用いて説明する。An example of application will be explained using figures.

第1図はカメラの日付け写し込み用の液晶パネルである
Figure 1 shows the camera's liquid crystal panel for imprinting the date.

1,2はパネルの前面及び背面基板であり0.4肋の厚
さのガラスからなる。
1 and 2 are the front and rear substrates of the panel, which are made of glass with a thickness of 0.4 ribs.

3,4はCVDによって形成されたSn02の透面電極
である。
3 and 4 are Sn02 transparent electrodes formed by CVD.

5は本発明の手段によって付けられた1200△厚のニ
ッケルメッキである。
5 is a 1200Δ thick nickel plating applied by the means of the present invention.

6は10仏のギャ.ツプ剤を含んだェポキシ樹脂のシー
ル剤である。
6 is Gya of 10 Buddhas. This is an epoxy resin sealant containing a sealing agent.

このようにして成るパネルに所定の成分を持つ正の液晶
組成物を7を注入する。8は偏光板である。
A positive liquid crystal composition 7 having predetermined components is injected into the panel thus constructed. 8 is a polarizing plate.

第2図はカメラの日付け写し込み機構の模式図である。
9は光源、10は第1図に示したパネル及びその支持体
、11はフィルムである。
FIG. 2 is a schematic diagram of the date imprinting mechanism of the camera.
9 is a light source, 10 is the panel shown in FIG. 1 and its support, and 11 is a film.

パネルが日付けを表示し、11のフィルムに写し込むの
であるが、第1図の5のニッケルメッキがなされていな
いと、光がいく分か偏光板からもれ、写真にパネルの全
体の輪郭が写ることになり都合が悪い。ニッケルメッキ
を行ったことによりその光のもれを防ぐことが出来、写
真には日付けの数字だけが鮮明に写るようになった。第
1図の5の部分は、蒸着、スパッタ等の手段でも他の金
属を付けることはできるが、コストの面から考えると本
発明による無電解〆ツキ体の応用として、プラスチック
フィルムを硝酸インジウム液に浸潰し、200℃にて焼
成する。これを実施例2と同様の方法によりニッケルメ
ッキを行い、所定のパターンにエッチングすれば回路基
板が出来る。このように本発明は様々な応用範囲が考え
られる。
The panel displays the date and imprints it on the film 11, but if the nickel plating shown in 5 in Figure 1 is not applied, some light will leak through the polarizing plate and the entire outline of the panel will be visible in the photograph. This would be inconvenient as it would appear in the photo. By applying nickel plating, it was possible to prevent light from leaking, and only the date numbers were clearly visible in photographs. Although it is possible to attach other metals to the part 5 in Fig. 1 by means such as vapor deposition or sputtering, from the viewpoint of cost, it is preferable to apply a plastic film to an indium nitrate liquid as an application of the electroless sealing body according to the present invention. and baked at 200°C. This is plated with nickel in the same manner as in Example 2, and etched into a predetermined pattern to form a circuit board. As described above, the present invention can be applied in various ranges.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は液晶パネルの主要断面図である。 1,2…前面及び背面基板、3,4…透明電極、5…ニ
ッケルメッキ層、6…シール剤、7…液晶、8・・・偏
光板。 第2図はカメラの日付け写し込み機構の模式図である。 9・・・光源としてのランプ、10・・・液晶パネル及
びその支持体、1 1・・・フィルム。鷺’図 髪Z図
FIG. 1 is a main sectional view of the liquid crystal panel. DESCRIPTION OF SYMBOLS 1, 2... Front and back substrates, 3, 4... Transparent electrodes, 5... Nickel plating layer, 6... Sealant, 7... Liquid crystal, 8... Polarizing plate. FIG. 2 is a schematic diagram of the date imprinting mechanism of the camera. 9... Lamp as a light source, 10... Liquid crystal panel and its support, 1 1... Film. Heron' figure hair Z figure

Claims (1)

【特許請求の範囲】[Claims] 1 絶縁体の基板上に半導体層を媒介とし、その上に目
的とする金属を2μm以下に無電解メツキしたことを特
徴とする無電解メツキ体。
1. An electroless plated body, characterized in that a target metal is electrolessly plated to a thickness of 2 μm or less on an insulating substrate using a semiconductor layer as a medium.
JP55148486A 1980-10-23 1980-10-23 Electroless plating body Expired JPS6021225B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55148486A JPS6021225B2 (en) 1980-10-23 1980-10-23 Electroless plating body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55148486A JPS6021225B2 (en) 1980-10-23 1980-10-23 Electroless plating body

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP1064606A Division JPH0263014A (en) 1989-03-16 1989-03-16 Light transmitting liquid crystal display
JP6460589A Division JPH0257336A (en) 1989-03-16 1989-03-16 Electroless plating for plastic

Publications (2)

Publication Number Publication Date
JPS5773173A JPS5773173A (en) 1982-05-07
JPS6021225B2 true JPS6021225B2 (en) 1985-05-25

Family

ID=15453826

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55148486A Expired JPS6021225B2 (en) 1980-10-23 1980-10-23 Electroless plating body

Country Status (1)

Country Link
JP (1) JPS6021225B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59116721A (en) * 1982-12-24 1984-07-05 Hitachi Ltd Liquid-crystal display device
US5270229A (en) * 1989-03-07 1993-12-14 Matsushita Electric Industrial Co., Ltd. Thin film semiconductor device and process for producing thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5050946A (en) * 1973-09-03 1975-05-07
JPS51131296A (en) * 1975-05-12 1976-11-15 Hitachi Ltd Liquid crystal matrix panel
JPS535690A (en) * 1976-07-01 1978-01-19 United States Surgical Corp Disposable liquid sample card and measuring instrument using same
JPS5752021A (en) * 1980-09-12 1982-03-27 Citizen Watch Co Ltd Manufacture of liquid crystal display cell

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5050946A (en) * 1973-09-03 1975-05-07
JPS51131296A (en) * 1975-05-12 1976-11-15 Hitachi Ltd Liquid crystal matrix panel
JPS535690A (en) * 1976-07-01 1978-01-19 United States Surgical Corp Disposable liquid sample card and measuring instrument using same
JPS5752021A (en) * 1980-09-12 1982-03-27 Citizen Watch Co Ltd Manufacture of liquid crystal display cell

Also Published As

Publication number Publication date
JPS5773173A (en) 1982-05-07

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